1 Optical and Electron Beam Studies of Carrier ...
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1 Optical and Electron Beam Studies of Carrier ...
increase was attributed to the temperature-induced growth of carrier lifetime, as was confirmed by LITG in T
Optical and Electron Beam Studies of Carrier Transport in Quasi-Bulk GaN Y. Lin, E. Flitsyian and L. Chernyak Physics Department, University of Central Florida, Orlando, FL 32816-2385 T. Malinauskas, R. Aleksiejunas, and K. Jarasiunas Institute of Materials Science and Applied Research, Vilnius University, 10222 Vilnius, Lithuania W. Lim and S.J. Pearton Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611-6400
Variable temperature Light-Induced Transient Grating Technique (LITG) combined with Electron Beam-Induced Current measurements in-situ in a Scanning Electron Microscope were employed for carrier transport studies in quasi-bulk Hydride-Vapor Phase Epitaxy grown undoped GaN layers. Diffusion length of carriers independently determined from both techniques was found to increase with temperature in the range from 70 to 400 K. This increase was attributed to the temperature-induced growth of carrier lifetime, as was confirmed by LITG in T
