Amplification and compression of weak picosecond ... - CiteSeerX
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Amplification and compression of weak picosecond ... - CiteSeerX
May 15, 1989 - Govind P. Agrawal* and N. A. Olsson. AT&T Bell ... energies as small as 0.1 pJ. ... 100 pJ. In this Letter we propose and demonstrate a novel.
500
OPTICS LETTERS / Vol. 14, No. 10 / May 15, 1989
Amplification and compression of weak picosecond optical pulses by using semiconductor-laser amplifiers Govind P. Agrawal* and N. A. Olsson AT&T Bell Laboratories, Murray Hill, New Jersey 07974 Received November 17, 1988; accepted February 27, 1989 A novel pulse-compression scheme is proposed and demonstrated for compressing weak picosecond pulses having energies as small as 0.1 pJ. A semiconductor-laser amplifier is shown to impose a nearly linear frequency chirp on the pulse as a result of self-phase modulation occurring because of gain-saturation-induced index changes. The amplified chirped pulse can be compressed by passing it through a dispersive delay line. The theory shows that,
depending on the operating conditions, the pulse width can be reduced by a factor of -2-4 and the peak power can be enhanced by a factor of -10-100. The preliminary experimental results are in agreement with theory.
The use of optical fibers for pulse compression has
become widespread in recent years. 1' 2 When an in-
tense optical pulse propagates down a fiber, the nonlinear phenomenon of self-phase modulation (SPM) imposes a nearly linear frequency chirp across the pulse. The chirped pulse can be compressed by passing it through a dispersive delay line such as a grating pair3 or a dispersive medium having anomalous groupvelocity dispersion (GVD). Because of a relatively weak fiber nonlinearity such pulse-compression techniques work only when the input pulses have relatively high peak powers with pulse energies exceeding 10100 pJ.
In this Letter we propose and demonstrate a novel pulse-compression scheme that can be used to compress weak picosecond pulses having energies as small as 0.1 pJ. The basic idea is to amplify such pulses in a semiconductor-laser amplifier. The gain-saturationinduced temporal variations in the carrier density of the amplifier lead to SPM as the pulse propagates through the amplifier.4 The amplified pulse has a nearly linear chirp over the central part of the pulse and can be compressed by using a dispersive delay line. Even though the compression factor is generally not very large (-2-4), the compressed pulse can have
Here a is the gain coefficient and No is the carrier density required for transparency.5 The confinement factor r accounts for the spread of the optical mode outside the active region of the amplifier. The parameter a in Eq. (1) is introduced to take into account the refractive-index changes that accompany the carrierdensity variations occurring as a result of gain saturation. It is sometimes referred to in the literature on semiconductor lasers as the linewidth enhancement factor.5 -7 It will be seen that the parameter a is responsible for SPM and the subsequent compression of optical pulses. Its typical values for InGaAsP amplifiers are in the range of 4-6, depending on the operating wavelength.
The time dependence of the optical gain is governed by the carrier-density rate equation
dN at
aA
A + I- aA dA = 1- (1 - ia)g(N)A, OZ Vg at 2
where A is the amplitude
(1)
of the pulse envelope, vg is
the group velocity, and the gain varies approximately linearly with the carrier density N, i.e., g(N) = ra(N - No). 0146-9592/89/100500-03$2.00/0
(2)
I
N glA2
qV
r,
(
hwo
where I is the injection current, V is the active volume, and i-r is the spontaneous carrier lifetime. By using Eq. (2) in Eq. (3) the gain satisfies _ go-g
-g
at
its peak power enhanced by a factor of -10-100 as a
result of amplification inside the semiconductor laser amplifier. To understand the origin of pulse compression, we first consider the theory of pulse propagation in a traveling-wave semiconductor-laser amplifier.4 In the slowly varying envelope approximation the pulse evolution is governed by
_
_ gIAi2
TC
(4)
Esat
where go = ra(I-r/qV
- No) is the small-signal gain of the amplifier and Esat = hwooia is the saturation energy. Here o- = V/FL is the cross-section area of the optical mode and L is the amplifier length. Typically U- 1 Um2 and a = 2-3 X 10-16 cm2 , resulting in Esat 5-6 pJ.
Equations (1) and (4) can be solved in a closed form