C. van der Beek

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ECRYS – Electronic Crystals – Cargèse, August 25th, 2011. Vortex pinning : a probe for nanoscale disorder in iron-‐based superconductors. Kees van der Beek.
Vortex  pinning  :  a  probe  for   nanoscale  disorder  in  iron-­‐based   superconductors   Kees  van  der  Beek   Laboratoire  des  Solides  Irradiés,  Ecole  Polytechnique,     PALAISEAU,  France  

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

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Collaborators   •  Sultan  DEMIRDIŞ,  Marcin  KONCZYKOWSKI          LSI,  CNRS  UMR  7642  &  CEA/DSM/IRAMIS,  Ecole  Polytechnique,  Palaiseau,  France   •  Yanina  FASANO,  René  CEJAS,  Hernan  PASTORIZA        Laboratorio  de  Bajas  Temperaturas,  InsLtuto  Balseiro,  Centro  Atomico  Bariloche,  San                        Carlos  de  Bariloche,  ArgenLna   •  Dorothée  COLSON,  Florence  ALBENQUE          Service  de  Physique  de  l’Etat  Condensé,  CEA/DSM/IRAMIS,  Gif  sur  YveSe,  France   • 

Shigeru  KASAHARA,  Takahito  TERASHIMA          Research  Center  for  Low  Temperature  and  Materials  Sciences,  Kyoto  University,  Japan  

• 

Ryuji  OKAZAKI,  Takasada  SHIBAUCHI,  Yuji  MATSUDA          Department  of  Physics,  Kyoto  University,  Kyoto,  Japan  

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

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Iron-­‐based  superconductors    Layered  structure   FeAs

FeSe

FeAs

LaFeAsO “1111”

BaFe2As2 “122”

PrFeAsO NdFeAsO SmFeAsO …

Ba(Fe,Co)2As2 BaFe2(As,P)2

Tc < 55 K

Tc < 42 K

FeSe

LiFeAs Tc < 20 K

Fe(Se,Te) Tc < 18K

From “To what extent pnictide superconductivity has been clarified: a progress report” Kenji Ishida, Yusuke Nakai, and Hideo Hosono, J. Phys. Soc. Japan 78, 062001 (2009).

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

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IBS:  Phase  Diagram                •  Charge  doped

 

 

 

 

                     •  Isovalently  doped  

BaFe2(As1-­‐xPx)2   Ba(Fe1-­‐xCox)2As2  

F. Rullier-Albenque, D. Colson, A. Forget, H. Alloul PRL 103, 057001 (2009)

S. Kasahara et al., Phys. Rev. B (2010)

•  High  sensi_vity  to  crystal  structure  details     •  Proximity  to  (an_-­‐ferro)magne_sm   ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

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IBS:  Electronic  structure  /  gap   •  Mul_band  Superconduc_vity   •  New  paradigm  for  High  Tc  s.c.   H. Ding et al., EPL 83, 47001 (2008)

Photoemission

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

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IBS:  Electronic  structure  /  gap   •  Mul_band  Superconduc_vity   •  New  paradigm  for  High  Tc  s.c.   H. Ding et al., EPL 83, 47001 (2008)

Photoemission

"Electron-­‐like"  sheets  

"Hole-­‐like"  sheets  

Μ  

Μ  

Γ  

Μ  

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

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IBS:  Electronic  structure  /  gap   •  Mul_band  Superconduc_vity   •  New  paradigm  for  High  Tc  s.c.   H. Ding et al., EPL 83, 47001 (2008)

Photoemission

•  Proposal  :  AF  coupling  between  "electron-­‐like"   and  "hole-­‐like"  Fermi  surface  sheets   "Electron-­‐like"  sheets  

↓↑    

-­‐  

-­‐  

↑↓    

"Hole-­‐like"  sheets  

↑↓    

-­‐  

Sign  of  the  phase  of     the  superconduc_ng       ↑↓     wave  func_on  

D.J. Mazin et al., Phys. Rev. Lett. 101, 057003 (2008);

K. Kuroki et al., Phys. Rev Lett. 101, 087004 (2008);

K. Kuroki et al., Phys. Rev B. 79, 224511 (2008);

+  

-­‐  

 "  s±  "  –  coupling        

↑↓    

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

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IBS:  Electronic  structure  /  gap   •  Mul_band  Superconduc_vity   •  New  paradigm  for  High  Tc  s.c.   H. Ding et al., EPL 83, 47001 (2008)

Photoemission

•  Proposal  :  AF  coupling  between  "electron-­‐like"   and  "hole-­‐like"  Fermi  surface  sheets   "Electron-­‐like"  sheets  

↓↑    

-­‐  

-­‐  

↑↓    

"Hole-­‐like"  sheets  

↑↓    

-­‐  

Sign  of  the  phase  of     the  superconduc_ng       ↑↓     wave  func_on  

D.J. Mazin et al., Phys. Rev. Lett. 101, 057003 (2008);

K. Kuroki et al., Phys. Rev Lett. 101, 087004 (2008);

K. Kuroki et al., Phys. Rev B. 79, 224511 (2008);

+  

-­‐  

 "  s±  "  –  coupling        

↑↓     Role  of  disorder/impuri_es?

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

 

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IBS:  Electronic  structure  /  gap   •  Mul_band  Superconduc_vity   •  New  paradigm  for  High  Tc  s.c.   H. Ding et al., EPL 83, 47001 (2008)

Photoemission

•  Proposal  :  AF  coupling  between  "electron-­‐like"   and  "hole-­‐like"  Fermi  surface  sheets   "Electron-­‐like"  sheets  

↓↑    

-­‐  

-­‐  

↑↓    

"Hole-­‐like"  sheets  

↑↓    

-­‐  

Sign  of  the  phase  of     the  superconduc_ng       ↑↓     wave  func_on  

D.J. Mazin et al., Phys. Rev. Lett. 101, 057003 (2008);

K. Kuroki et al., Phys. Rev Lett. 101, 087004 (2008);

K. Kuroki et al., Phys. Rev B. 79, 224511 (2008);

+  

-­‐  

 "  s±  "  –  coupling        

↑↓     Role  of  disorder/impuri_es?

 

9   –  Electronic   Crystals  –  Cargèse,   August   011   Interband  scamering  =  dECRYS   estruc_ve   interference   =  harmful   ,    2    5th,            I2ntraband   scamering  =  benign  

 

Gap  symmetry  

Materials  with  similar  structure  do  not  have  the  same  ground  state   K. Hashimoto, M. Yamashita, S. Kasahara, Y. Senshu, N. Nakata, S. Tonegawa, K. Ikada, A. Serafin, A. Carrington, T. Terashima, H. Ikeda, T. Shibauchi, and Y. Matsuda, Phys. Rev. B 81, 220501 (2010).

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

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IBS  :    characterize  the  disorder    defects                  nm-­‐scale  heterogeneity

 

vs  

 

Intrinsic  

impuri_es                    dopant  atoms

 

Vortex  pinning   Extended  defects  pin  differently  than  point-­‐like  defects

 

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

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H

Crash-­‐course  on  vor_ces   π/2

Hc2

Etat state

normal Normal

π

3π/2 2ξ

j0

Mixed state

Etat mixte

λ

φ=0 2 Bc1 ns Bz(r)

j(r)

Hc1

Current density

Etat Meissner Meissner State

T

Tc

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

B (magn. flux density)

12  

H

Crash-­‐course  on  vor_ces   π/2

Hc2

Etat state

normal Normal

π

3π/2 2ξ

j0

Mixed state

Etat mixte

φ=0 2 Bc1 ns Bz(r)

λ j(r)

Hc1

Current density

Etat Meissner Meissner State

T

Current-­‐  voltage  characteris_c   F=j×B Lorentz force v = F/γ friction E=v×B Josephson relation

}

E = ρfj

where

Tc

B (magn. flux density)

E

flux flow

R

or V

ρf = B2/γ ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

j or I 13  

H

Crash-­‐course  on  vor_ces   π/2

Hc2

Etat state

normal Normal

π

3π/2 2ξ

j0

Mixed state

Etat mixte

φ=0 2 Bc1 ns Bz(r)

λ j(r)

Hc1

Current density

Etat Meissner Meissner State

T

Current-­‐  voltage  characteris_c   F=j×B Lorentz force v = F/γ friction E=v×B Josephson relation

}

E = ρfj

where

ρf =

B2/γ

Tc

B (magn. flux density)

E

flux flow

R

or V

flux creep

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

jc = Fp/B

j or I 14  

Bimer  decora_on  of  vor_ces  in  Ba(Fe0.9Co0.1)2As2     Field  coil  

B  =  0.5  mT  

Fe  filament  

10  µm   Single  crystal  Ba(Fe0.9Co0.1)2As2  (D.  Colson,  F.  Albenque)  

Ba(Fe1-­‐xCox)2As2  crystal  

Single  crystal   Bi2Sr2CaCu2O8+δ       (Y.  Fasano)  

Cf Eskildsen et al. (BD,SANS); Vinikov et al. (BD);

Inosov et al. (MFM, SANS); Kalisky et al.;

Luan et al. (scanning SQUID)

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

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Jc  of  iron-­‐based  superconductors   1.  Magneto-­‐op_cal  visualiza_on  of  B Ba(Fe0.9Co0.1)2As2  

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

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Jc  of  iron-­‐based  superconductors   1.  Magneto-­‐op_cal  visualiza_on  of  B Ba(Fe0.9Co0.1)2As2  

2.    Flux  density  profiles:  jc  at  low  B   500

T = 10 K

B ( mT )

400

µ0 jc = 2

dB

dx

300

200

100

0 0

200

400

600

x ( !m )

800

1000

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

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Jc  of  iron-­‐based  superconductors   1.  Magneto-­‐op_cal  visualiza_on  of  B Ba(Fe0.9Co0.1)2As2   +   +   +   +   +   +   +   +  

3.  Hall  probe  array  magnetometry:            hysteresis  loops  of  local  B,  jc  at  higher  B    

2 109

Ba(Fe Co As) 10

1-x

x

T[K]

2

4.2 6 8 10 12 14 16

x=5% crystal #2 H || c

500

T = 10 K

B ( mT )

400

µ0 jc = 2

dB

dx

300

200

5 108 0

0 -5 108

-5 -1 109 -1.5 109

-10 -2

100

1 109

-1

0 B(T)

1

2

-2 109

0 0

200

400

600

x ( !m )

800

1000

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

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j ( Am-2 )

2.    Flux  density  profiles:  jc  at  low  B  

dB/dx ( G / !m )

5

1.5 109

Vortex  pinning  and  the  cri_cal  current  density   Strong  pinning    

Sparse  extended  defects    (ni    ξ -­‐3)  

•   •   •



 modify  the  core  and      modify  the  screening    current  distribu_on    Total  force  Fp  =  direct  sum  Σi  fp,i of  elementary   pinning  forces  fp,i  

 Total  force  ~    2nd  moment  of  fp   Fp    =  (np 〈fp2 〉/Vc)1/2



 Vc = LcRc2  

determined  by  

〈[u(Rc, 0) – u(0,0)] 2 〉1/2   = ξ

〈[u(0, Lc) – u(0,0)] 2 〉1/2   = ξ

•                pins  sufficiently  effec_ve  :  Vc = Lca02       Yu. Ovchinnikov and B. Ivlev, PRB 43, 8024 (1991);

C.J. van der Beek et al PRB 66, 024523 (2002);

G. Blatter, V.B. Geshkenbein, J. Koopman, PRL 92, 067009 (2004).  

Field-­‐independent jc followed  by  e-B/B0

A.I. Larkin, Yu. Ovchinnikov, JETP 31, 784 (1970); J. Low. Temp. Phys. 34, 409 (1979). G. Blatter, M.V. Feigel'man, V.B. Geshkenbein, A.I. Larkin, and V.M. Vinokur, Rev. Mod. Phys. 66, 1125 (1994).

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

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Jc  of  iron-­‐based  superconductors   1.  Magneto-­‐op_cal  visualiza_on  of  B Ba(Fe0.9Co0.1)2As2   +   +   +   +   +   +   +   +  

3.  Hall  probe  array  magnetometry:            hysteresis  loops  of  local  B,  jc  at  higher  B    

2 109

Ba(Fe Co As) 10

1-x

x

T[K]

2

4.2 6 8 10 12 14 16

x=5% crystal #2 H || c

500

T = 10 K

B ( mT )

400

µ0 jc = 2

dB

dx

300

200

5 108 0

0 -5 108

-5 -1 109 -1.5 109

-10 -2

100

1 109

-1

0 B(T)

1

2

-2 109

0 0

200

400

600

x ( !m )

800

1000

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

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j ( Am-2 )

2.    Flux  density  profiles:  jc  at  low  B  

dB/dx ( G / !m )

5

1.5 109

Jc  of  iron-­‐based  superconductors   Ba(Fe0.925Co0.075)2As2 crystal #2.1 Critical current density vs applied magnetic field

jc(0; 5 K)

109

j ( Am-2 )

jc(0; 11 K)

0.5 2 109

Ba(Fe Co As)

jc(0; 17.5 K)

10

1-x

x

T[K]

2

4.2 6 8 10 12 14 16

x=5% crystal #2 H || c

5

8

5.0 K fit 3!108/B1/2 11.26 K fit 1!107/B1/2ı 17.5 K fit 2.8!07/B-1/2 0.01

1 109 5 108

0

0 -5 108

-5 -1 109

0.1

1

µ0Ha ( T )

-1.5 109

-10 -2

-1

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

0 B(T)

1

2

-2 109

22  

j ( Am-2 )

dB/dx ( G / !m )

10

1.5 109

Jc  of  iron-­‐based  superconductors   Ba(Fe0.925Co0.075)2As2 crystal #2.1 Critical current density vs applied magnetic field

Yu. Ovchinnikov and B. Ivlev, PRB 43, 8024 (1991);

C.J. van der Beek et al PRB 66, 024523 (2002);

G. Blatter, V.B. Geshkenbein, J. Koopman, PRL 92, 067009 (2004).  

jc(0; 5 K)

109

j ( Am-2 )

jc(0; 11 K)

0.5 2 109

Ba(Fe Co As)

jc(0; 17.5 K)

10

1-x

x

T[K]

2

4.2 6 8 10 12 14 16

x=5% crystal #2 H || c

5

8

5.0 K fit 3!108/B1/2 11.26 K fit 1!107/B1/2ı 17.5 K fit 2.8!07/B-1/2 0.01

1 109 5 108

0

0 -5 108

-5 -1 109

0.1

1

µ0Ha ( T )

Extended  point-­‐like  defects  with  niξ3  MP@



    _I_ 1P L

S. Demirdiş et al cond-mat 1106.6065v1

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

38  

Ba(Fe1-­‐xCox)2As2  at  low  B  :  Pinning  forces   Hdec=  10  Oe  

Tirr  

Tdec  

Tc  

 1P YRUWLFHV  

D [ 

Tf  

 

 















E [ 

[>MP@

  

       Pinning  force  distribu_on  at  Tf  

|fi| ~ 5×10-6 N/m

    _I_ 1P L

 1P YRUWLFHV      



NB  Newton’s  3rd  law:                Interac_on  force  must  be                balanced  by  pinning  force  

F



G

 

[>MP@



    _I_ 1P L

Average  Pinning  force  per  vortex   S. Demirdiş et al cond-mat 1106.6065v1

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

39  

Low  B  :  Strong  pinning  by  nm-­‐scale  disorder     ε0 (T )

Spa_al  inhomogeneity  

ε0 ‒ Δε0

Tc  

0.5 ε0  

|fi| ~ 5×10-6 N/m

Average  Pinning  force  per  vortex  

fp ~ 3×10-13 N  

Pinning  force  of  a  single  pin  

Tc - δTc   Distance  between  2  pins  ~  60  nm  

Nm-­‐scale  disorder    

S. Demirdiş et al cond-mat 1106.6065v1

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

40  

Low  B  :  Strong  pinning  by  nm-­‐scale  disorder     ε0 (T )

Spa_al  inhomogeneity  

ε0 ‒ Δε0

Tc  

0.5 ε0  

|fi| ~ 5×10-6 N/m

Average  Pinning  force  per  vortex  

fp ~ 3×10-13 N  

Pinning  force  of  a  single  pin  

Tc - δTc   Distance  between  2  pins  ~  60  nm  

Nm-­‐scale  disorder     Cri_cal  current  density  ?  

S. Demirdiş et al cond-mat 1106.6065v1

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

41  

Low  B  :  Strong  pinning  by  nm-­‐scale  disorder     ε0 (T )

0.05 ε0  

Spa_al  inhomogeneity  

ε0 ‒ Δε0

Tc  

0.5 ε0  

|fi| ~ 5×10-6 N/m

Average  Pinning  force  per  vortex  

fp ~ 3×10-13 N  

Pinning  force  of  a  single  pin  

Nm-­‐scale  disorder    

Tc - δTc   Distance  between  2  pins  ~  60  nm  

4 109 3.5 109

Cri_cal  current  density  ?  

(a)

(b)

B = 30 mT

25

x = 0.075

jc ( Am-2 )

3 109

109

2.5 109

20

2 109

5K

1 109

Up ~ ∆ε0 = 0.05 ε0

108

5 108 0

Tc ( K )

1.5 109

11 K

x = 0.075 #2.1 x = 0.1 #1 0

5

10

17.5 K 15

T(K)

20

25

0.01

1 0.1 µ0Ha ( T ) et al S. Demirdiş

15

10

cond-mat 1106.6065v1

ECRYS  –FIG.  Electronic   Crystals   –  Cargèse,   August  25th,   2: (Color online) (a) Temperature of2011   the low-field critical current density in Ba(Fe0.925 Co0.075 )2 As2 crystal #2 and Ba(Fe0.9 Co0.1 )2 As2 crystal #1 . Error bars represent the dis-

42  

5 6 108

#1 #2 #3

Low  B  :  Strong  pinning  by  nm-­‐scale  disorder     ε0 (T )

0.05 ε0  

Spa_al  inhomogeneity  

ε0 ‒ Δε0

Tc  

0.5 ε0  

|fi| ~ 5×10-6 N/m

Average  Pinning  force  per  vortex  

fp ~ 3×10-13 N  

Pinning  force  of  a  single  pin  

Nm-­‐scale  disorder    

Tc - δTc   Distance  between  2  pins  ~  60  nm  

4 109 3.5 109

Cri_cal  current  density  ?  

(a)

(b)

B = 30 mT

jc ( Am-2 )

3 109

109

2.5 109

25

x = 0.075

Gap  maps  

20

2 109

5K

1 109

Up ~ ∆ε0 = 0.05 ε0

108

5 108 0

Tc ( K )

1.5 109

11 K

x = 0.075 #2.1 x = 0.1 #1 0

5

10

17.5 K 15

T(K)

20

25

0.01

F. Massee

1 0.1 etµal., H (Phys. T ) Rev. 0 a

15

10

B 79, 220517 (2009)

ECRYS  –FIG.  Electronic   Crystals   –  Cargèse,   August  25th,   2: (Color online) (a) Temperature of2011   the low-field critical current density in Ba(Fe0.925 Co0.075 )2 As2 crystal #2 and Ba(Fe0.9 Co0.1 )2 As2 crystal #1 . Error bars represent the dis-

43  

5 6 108

#1 #2 #3

Jc  of  iron-­‐based   superconductors Mesures   locales  du   courant  cri_que     jc   •    2  contribu_ons:     Extended  defects   Small  B   Point-­‐like  impuri_es   Larger  B  

jc(0; 5 K)

109

j ( Am-2 )

jc(0; 11 K)

jc(0; 17.5 K)

10

0.5

8

x

2

4.2 6 8 10 12 14 16

x=5% crystal #2 H || c

1.5 109 1 109 5 108

0

0 -5 108

-5 -1 109

0.1

1

µ0Ha ( T )

-1.5 109

-10 -2

-1

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

0 B(T)

1

2

-2 109

44  

j ( Am-2 )

5.0 K fit 3!108/B1/2 11.26 K fit 1!107/B1/2ı 17.5 K fit 2.8!07/B-1/2 0.01

1-x

T[K]

5

dB/dx ( G / !m )

10

2 109

Ba(Fe Co As)

3  >> 1 High  Mesures   B  :  origin  olf  ocales   weak  ``collec_ve’’   p inning   n ξ p j du  courant  cri_que  

c  

Two  main  clues:

 

 •  Magnitude  of  jc

he ohe

109

4

(b)

3 2

10

1 0 -1

-0.5

0

0.5

1

PrFeAsO1-y NdFeAsO0.9F0.1 Ba0.45K0.55Fe2As2

10

0.2

0.4

2

4.2 6 8 10 12 14 16

x=5% crystal #2 H || c

1.5 109 1 109 5 108

0

0 -5 108

-5

-1.5 109

-10

0.6

T / Tc

FIG. 3: tion jccoll

x

-1 109

Ba0.72K0.28Fe2As2 [35] Ba(Fe0.9Co0.1)2As2 [30]

0

1-x

T[K]

5

# charges / u.c.

8

2 109

Ba(Fe Co As)

dB/dx ( G / !m )

,

jccoll ( Am-2 )

(a)

0.8

1

-2

-1

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011   (Color online) (a) Collective pinning contribuin the charge-doped compounds PrFeAsO1−y ,

0 B(T)

1

2

-2 109

45  

j ( Am-2 )

of y,

jccoll ( 109 Am-2 )

C.J. van der Beek et al., PRL 105, 267002 (2010)  

α

4) ny. r2 mi va of nt in

3

 •  Temperature  dependence  of  jc  

3  >> 1 High  Mesures   B  :  origin  olf  ocales   weak  ``collec_ve’’   p inning   n ξ p j du  courant  cri_que  

c  

Two  main  clues:

 

 •  Magnitude  of  jc  •  Temperature  dependence  of  jc  

•  Local  varia_ons  of  Tc       •  Charge  redistribu_on   •  Reduc_on of   the pairing   poten_al V    

   

 

   

 

   

fp = (Bc2/µ0) Dv3/ξ ~ ε0 (Dv/ξ)3

p p

p

G. Blatter, M.V. Feigel'man, V.B. Geshkenbein, A.I. Larkin, and V.M.Vinokur, Rev. Mod. Phys. 66, 1125 (1994).

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

46  

3  >> 1 High  Mesures   B  :  origin  olf  ocales   weak  ``collec_ve’’   p inning   n ξ p j du  courant  cri_que  

c  

Two  main  clues:

 

 •  Magnitude  of  jc  •  Temperature  dependence  of  jc  

•  Local  varia_ons  of  Tc       •  Charge  redistribu_on   •  Reduc_on of   the pairing   poten_al V    

   

 

   

 

•  Quasipar_cle  scamering  (δl  or  δκ)   •  ξeff = (ξ0l)1/2

   

fp = (Bc2/µ0) Dv3/ξ ~ ε0 (Dv/ξ)3

p p

p

G. Blatter, M.V. Feigel'man, V.B. Geshkenbein, A.I. Larkin, and V.M.Vinokur, Rev. Mod. Phys. 66, 1125 (1994).

E.V. Thuneberg, J. Kürkijärvi, D. Rainer, PRL 48, 1853 (1982).

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

47  

 

High   B  :  origin   of  weak   pinning   Mesures   locales   du  c``collec_ve’’   ourant  cri_que   j   c  

Two  main  clues:

 

 •  Magnitude  of  jc :  pinning  by  dopant  atoms  reproduce  this  for  the  correct  nd 3

 •  T-­‐dependence  of  jc : reproduced  by  pinning  due  to  quasi-­‐par_cle  scamering  

he ohe

3 2

10

1 0 -1

-0.5

0

0.5

1

PrFeAsO1-y NdFeAsO0.9F0.1 Ba0.45K0.55Fe2As2

10

0.2

0.4

2

4.2 6 8 10 12 14 16

x=5% crystal #2 H || c

1.5 109 1 109 5 108

0

0 -5 108

-5

-1.5 109

-10

0.6

T / Tc

FIG. 3: tion jccoll

x

-1 109

Ba0.72K0.28Fe2As2 [35] Ba(Fe0.9Co0.1)2As2 [30]

0

1-x

T[K]

5

# charges / u.c.

8

2 109

Ba(Fe Co As)

dB/dx ( G / !m )

109

4

p

(b)

0.8

1

-2

-1

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011   (Color online) (a) Collective pinning contribuin the charge-doped compounds PrFeAsO1−y ,

0 B(T)

1

2

-2 109

48  

j ( Am-2 )

of y,

,

jccoll ( Am-2 )

(a)

α

4) ny. r2 mi va of nt in

jccoll ( 109 Am-2 )

C.J. van der Beek et al., PRL 105, 267002 (2010)  

Scattering parameters from jc of IBS compound

impurity

PrFeAsO0.9 (vacancy) NdFeAsO0.9F0.1 (F) Ba(Fe0.9Co0.1)2As2 ( Co ) Ba0.72K0.28Fe2As2 ( K ) Ba0.6K0.4Fe2As2 (K) Ba0.45K0.55Fe2As2 ( K ) kF ~ 0.3 Å-1

np (nm-3) 1.5 1.5 2 2.8 4 5.5

sin δ0 = 2-1/2 kFDv

Dv (Å) 1.46 0.9 0.9 0.7 0.8 0.7

0.3(2) 0.2 0.17 0.1(4) 0.2 0.2

l ( nm ) 10 25 20 23 10 12

C.J. van der Beek et al., PRL 105, 267002 (2010)  

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

49  

Scattering parameters from jc of IBS compound

impurity

PrFeAsO0.9 (vacancy) NdFeAsO0.9F0.1 (F) Ba(Fe0.9Co0.1)2As2 ( Co ) Ba0.72K0.28Fe2As2 ( K ) Ba0.6K0.4Fe2As2 (K) Ba0.45K0.55Fe2As2 ( K )

np (nm-3) 1.5 1.5 2 2.8 4 5.5

Dv (Å)

sin δ0 = 2-1/2 kFDv

1.46 0.9 0.9 0.7 0.8 0.7

0.3(2) 0.2 0.17 0.1(4) 0.2 0.2

l ( nm ) 10 25 20 23 10 12

Kontani and S. Onari, Phys. Rev. Lett. 104, 157001 (2010).

δTc    ~  100  –  200  %  

V. Mishra et al., Phys. Rev. B 79, 094512(2009).

δTc    ~  50  %    

Tc/Tc0

kF ~ 0.3 Å-1

Γ = [nd/πNn(0)] sin δ0

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

50  

Summary   •  Two  contribu_ons  to  flux  pinning  in  IBS   •  Strong  pinning  (extended  defects)                                      niξ3  >  1   -­‐  QP  scamering  in  the  vortex  core   -­‐  Extract  scamering  parameters,  problema_c  for  s±   C.J. van der Beek et al., PRL 105, 267002 (2010); PRB 81, 174517 (2010). S. Demirdiş et al cond-mat 1106.6065v1 ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

51  

Hystere_c  magne_za_on  loops  for  different  IBS   1 Ba0.45K0.55Fe2As2 10

10

0.5

jccoll+jcs(0) -2

j ( Am )

NdFeAsO0.9F0.1 BaFe2(As0.67P0.33)2 Hon(PrFeAsO)

0

108

-0.5

-1

109

c

Bs / Bs( 0 )

PrFeAsO1-y

jccoll+jc

jcs(0)

C.J. van der Beek et al., PRL 105, 267002 (2010)  

-2

-1.5

-1

-0.5

0

0.5

1

1.5

107

2

µ0Ha ( T )

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

FIG. 1: (Color online) Normalized hysteresis loops of the

52  

FIG. 2: (Color on

the sur-

2 Cri_cal  current  density  for  different   IBS  

10

10

jccoll+jcs(0)

0.5

(Ba,K)Fe2As2  

jccoll

-2

j ( Am )

jccoll+jcs(0)

jc

109

c

Hon 0.5 s

108

jc (0)

Ba(Fe,Co)2As2  

jccoll

NdFeAs(O,F)  

BaFe2(As1-xPx)2

Ba0.45K0.55Fe2As2 Ba0.6K0.4Fe2As2 [36 ]

10

Hon

jccoll

PrFeAsO1-y NdFeAsO0.9F0.1

7

PrFeAsO1-­‐y  

coll

Ba(Fe0.9Co0.1)2As2 [34 ]

0.01

x=0.23 x=0.33 x=0.49

0.1

B(T)

BaFe2(As,P)2   1 C.J. van der Beek et al., PRL 105, 267002 (2010)  

ECRYS  –  Electronic   –  Cargèse,   August  25th,   FIG. 2: (Color online) Critical currentCrystals   density as function of2011   magnetic flux density for PrFeAsO1−y (✷), NdFeAsO0.9 F0.1 (◦), Ba(Fe Co ) As (�) [35], Ba K Fe As ( , �), and

53  

PrFeAsO1-­‐y  

µ0 jc = 2

dB

dx

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

54  

Local  measurement  of  jc   PrFeAsO1-­‐y  

Hall  probe  arrays   µ0 jc = 2

dB

dx

Magneto-­‐op_cal  visualisa_on   ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

55  

Local  measurement  of  jc   Low  field  

•    two  contribu_ons:     -­‐  -­‐ 

Extended  defects   Point-­‐like  Impuri_es  

Higher  field  

ECRYS  –  Electronic  Crystals  –  Cargèse,  August  25th,  2011  

56