Cd0.9375Mn0.0625S diluted magnetic semiconductor: A DFT study Anita Rani, Kulwinder Kaur, and Ranjan Kumar Citation: AIP Conference Proceedings 1675, 030033 (2015); doi: 10.1063/1.4929249 View online: http://dx.doi.org/10.1063/1.4929249 View Table of Contents: http://scitation.aip.org/content/aip/proceeding/aipcp/1675?ver=pdfcov Published by the AIP Publishing Articles you may be interested in Suppression of the metal-insulator transition by magnetic field in (Pr1− y Y y )0.7Ca0.3CoO3 (y = 0.0625) J. Appl. Phys. 115, 233914 (2014); 10.1063/1.4884435 First-principles study of structural stability and electronic structure of La-doped Sr 1.9375 La 0.0625 TiO 3.968 75 J. Appl. Phys. 107, 103711 (2010); 10.1063/1.3359712 Ferromagnetic properties, electronic structure, and formation energy of Ga 0.9375 M 0.0625 N ( M = vacancy , Ca) by first principles study J. Appl. Phys. 104, 043912 (2008); 10.1063/1.2970158 Magnetization and magnetic susceptibility of the diluted magnetic semiconductor Cd1−x Mn x S J. Appl. Phys. 69, 6114 (1991); 10.1063/1.347784 Neutron diffraction study of the wurtzite‐structure dilute magnetic semiconductor Zn0.45Mn0.55Se J. Appl. Phys. 61, 3540 (1987); 10.1063/1.338717
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Guru Nanak College for Girls, Sri Muktsar Sahib, Punjab, India Department of Physics, Punjab University, Chandigarh-160014, India
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