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Datasheet IPA50R650CE - Infineon Technologies
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Datasheet IPA50R650CE - Infineon Technologies
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Jul 12, 2016 - CoolMOS⢠is a revolutionary technology for high voltage power ..... automotive, aviation and aerospace
IPA50R650CE
MOSFET 500VCoolMOSªCEPowerTransistor
PG-TO220FP
CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket.
Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications
Drain Pin 2
Gate Pin 1
Applications
Source Pin 3
PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters Parameter
Value
Unit
VDS @ Tj,max
550
V
RDS(on),max
0.65
Ω
ID
9
A
Qg,typ
15
nC
ID,pulse
19
A
Eoss @ 400V
1.69
µJ
Type/OrderingCode
Package
Marking
IPA50R650CE
PG-TO 220 FullPAK
5R650CE
Final Data Sheet
1
RelatedLinks see Appendix A
Rev.2.3,2016-07-12
500VCoolMOSªCEPowerTransistor IPA50R650CE
TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.3,2016-07-12
500VCoolMOSªCEPowerTransistor IPA50R650CE
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
9 5.7
A
TC = 25°C TC = 100°C
-
19
A
TC=25°C
-
-
102
mJ
ID =2.3A; VDD = 50V
EAR
-
-
0.15
mJ
ID =2.3A; VDD = 50V
Avalanche current, repetitive
IAR
-
-
2.3
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS=0...400V
Gate source voltage
VGS
-20 -30
-
20 30
V
static; AC (f>1 Hz)
Power disspiation (Full PAK)
Ptot
-
-
27.2
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-40
-
150
°C
-
Mounting torque
-
-
-
50
Ncm M2.5 screws
IS
-
-
4.0
A
TC=25°C
IS,pulse
-
-
19.0
A
TC = 25°C
dv/dt
-
-
15
V/ns
VDS=0...400V,ISD
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