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Freescale Semiconductor Technical Data

Document Number: MRF6S19060N Rev. 3, 5/2006

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 610 mA, Pout = 12 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 16 dB Drain Efficiency — 26% IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Bandwidth ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 60 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • 200_C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

MRF6S19060NR1 MRF6S19060NBR1

1930- 1990 MHz, 12 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs

CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S19060NR1

CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S19060NBR1

Table 1. Maximum Ratings Rating

Symbol

Value

Unit

Drain- Source Voltage

VDSS

- 0.5, +68

Vdc

Gate- Source Voltage

VGS

- 0.5, +12

Vdc

Storage Temperature Range

Tstg

- 65 to +175

°C

Operating Junction Temperature

TJ

200

°C

Symbol

Value (1,2)

Unit

Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 60 W CW Case Temperature 79°C, 12 W CW

RθJC

0.84 1.0

°C/W

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.

© Freescale Semiconductor, Inc., 2006. All rights reserved.

RF Device Data Freescale Semiconductor

MRF6S19060NR1 MRF6S19060NBR1 1

Table 3. ESD Protection Characteristics Test Methodology

Class

Human Body Model (per JESD22 - A114)

1B (Minimum)

Machine Model (per EIA/JESD22 - A115)

A (Minimum)

Charge Device Model (per JESD22 - C101)

III (Minimum)

Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020

Rating

Package Peak Temperature

Unit

3

260

°C

Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol

Min

Typ

Max

Unit

Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc)

IDSS

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc)

IDSS

—

—

1

μAdc

Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc)

IGSS

—

—

1

μAdc

Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc)

VGS(th)

1.5

2.2

2.5

Vdc

Gate Quiescent Voltage (VDS = 28 Vdc, ID = 610 mAdc)

VGS(Q)

2

2.8

4

Vdc

Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2.0 Adc)

VDS(on)

0.2

0.3

0.4

Vdc

Crss

—

1.5

—

pF

Characteristic Off Characteristics

On Characteristics

Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 610 mA, Pout = 12 W Avg., f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain

Gps

14.5

16

18.5

dB

Drain Efficiency

ηD

24.5

26

—

%

Intermodulation Distortion

IM3

—

- 37

- 35

dBc

ACPR

—

- 51

- 48

dBc

IRL

—

- 12

- 10

dB

Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output.



R1 VBIAS

VSUPPLY R2

C6

C1

C2

C3

Z6

C4

C5

Z17 RF INPUT

R3 Z1

Z2

Z3

Z4

Z5

Z8

Z9

Z10

Z11

Z12

Z13

Z7

Z14

Z15

RF OUTPUT

C8 Z16

C7

DUT VSUPPLY C9

Z1 Z2 Z3 Z4 Z5 Z6 Z7, Z8 Z9 Z10

0.250″ x 0.083″ Microstrip 0.750″ x 0.083″ Microstrip 0.375″ x 0.425″ Microstrip 0.370″ x 0.083″ Microstrip 0.365″ x 1.000″ Microstrip 0.650″ x 0.080″ Microstrip 0.115″ x 1.000″ Microstrip 0.240″ x 1.000″ Microstrip 0.310″ x 0.315″ Microstrip

Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB

C10

C11

0.225″ x 0.083″ Microstrip 0.325″ x 0.500″ Microstrip 0.450″ x 0.083″ Microstrip 0.300″ x 0.245″ Microstrip 0.195″ x 0.083″ Microstrip 1.150″ x 0.070″ Microstrip 1.150″ x 0.083″ Microstrip Arlon AD250, 0.030″, εr = 2.5

Figure 1. MRF6S19060NR1(NBR1) Test Circuit Schematic

Table 6. MRF6S19060NR1(NBR1) Test Circuit Component Designations and Values Part

Description

Part Number

Manufacturer

C1

100 nF Chip Capacitor

CDR33BX104AKWS

Kemet

C2, C3, C7, C8, C9

6.8 pF Chip Capacitors

600B6R8BT250XT

ATC

C4, C5, C6, C10, C11

10 μF, 50 V Chip Capacitors

GRM55DR61H106KA88L

Murata

R1

1 k Chip Resistor

R2

10 k Chip Resistor

R3

10 Chip Resistor

MRF6S19060NR1 MRF6S19060NBR1 RF Device Data Freescale Semiconductor

3

R1

C4 R2

C6

C1

C2

C5

C3 R3 C8

CUT OUT AREA

C7

C9 C10 C11

MRF6S19060N/NB Rev. 2

Figure 2. MRF6S19060NR1(NBR1) Test Circuit Component Layout



TYPICAL CHARACTERISTICS 27

16.5

26.5

ηD

26

16.3 16.2 16.1

IRL

VDD = 28 Vdc, Pout = 12 W (Avg.) IDQ = 610 mA, 2−Carrier N−CDMA 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF)

16 15.9

25.5 25 −30 −36

IM3

−42

15.8

−48

15.7

−54

ACPR

−10

IM3 (dBc), ACPR (dBc)

Gps, POWER GAIN (dB)

16.4

−60 1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000

−14 −18 −22 −26 −30

IRL, INPUT RETURN LOSS (dB)

Gps

ηD, DRAIN EFFICIENCY (%)

16.6

f, FREQUENCY (MHz)

Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 12 Watts Avg.

38.5

16.1

38

ηD

37.5

15.9 15.8 15.7

IRL

15.6 15.5

VDD = 28 Vdc, Pout = 24 W (Avg.) IDQ = 610 mA, 2−Carrier N−CDMA 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF)

IM3

36.5 −20 −25 −30

15.4 15.3

37

−35 ACPR

−10



16

−40

−45 15.2 1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000

−14 −18 −22 −26 −30

IRL, INPUT RETURN LOSS (dB)

Gps


16.2

f, FREQUENCY (MHz)

Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 24 Watts Avg.

18

−10


17

IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc)

IDQ = 915 mA 763 mA 610 mA

16

458 mA 15 305 mA

14 13

VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing

12

VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing −20 IDQ = 305 mA

915 mA

−30

−40

−50

458 mA

763 mA

610 mA

−60 10

1

100

200

1

10

100

200

Pout, OUTPUT POWER (WATTS) PEP

Pout, OUTPUT POWER (WATTS) PEP

Figure 5. Two - Tone Power Gain versus Output Power

Figure 6. Third Order Intermodulation Distortion versus Output Power


5

−10 VDD = 28 Vdc, Pout = 60 W (PEP), IDQ = 610 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz

P3dB = 49.503 dBm (89.19 W)

−30 3rd Order −40 5th Order −50

7th Order

−60 0.1

Ideal

53 Pout, OUTPUT POWER (dBm)

−20

51 P1dB = 48.792 dBm (75.72 W)

49

1

45 43 VDD = 28 Vdc, IDQ = 610 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 1960 MHz

39 23

100

10

Actual

47

41

25

27

29

31

35

33

37

TWO−TONE SPACING (MHz)

Pin, INPUT POWER (dBm)

Figure 7. Intermodulation Distortion Products versus Tone Spacing

Figure 8. Pulse CW Output Power versus Input Power

60 VDD = 28 Vdc, IDQ = 610 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 50 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth 40 PAR = 9.8 dB @ 0.01% Probability (CCDF)

25_C

−30_C 25_C

85_C −20 −30_C 85_C 25_C −30

ηD 30

−30_C −40

ACPR

IM3 20

−50

TC = −30_C Gps

10

−10


ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)

IMD, INTERMODULATION DISTORTION (dBc)

TYPICAL CHARACTERISTICS

−60 85_C

25_C −70

0 10

1

100

Pout, OUTPUT POWER (WATTS) AVG.

Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power

TC = −30_C 50

17 25_C

ηD

16 85_C 15

Gps

40 30

85_C 20

14 VDD = 28 Vdc IDQ = 610 mA f = 1960 MHz

13

Pout, OUTPUT POWER (WATTS) CW

Figure 10. Power Gain and Drain Efficiency versus CW Output Power

15

14 16 V

13

0 10

16

10

12 1

IDQ = 610 mA f = 1960 MHz

60 Gps, POWER GAIN (dB)

18 Gps, POWER GAIN (dB)

17

70 −30_C


19

100

20 V

24 V

28 V 32 V

VDD = 12 V 12 0

20

40

60

80

100

Pout, OUTPUT POWER (WATTS) CW

Figure 11. Power Gain versus Output Power



TYPICAL CHARACTERISTICS

MTTF FACTOR (HOURS x AMPS2)

109

108

107

106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.

Figure 12. MTTF Factor versus Junction Temperature

N - CDMA TEST SIGNAL

100

0

1.2288 MHz Channel BW

−10 −20

1

−IM3 in 1.2288 MHz Integrated BW

−30

+IM3 in 1.2288 MHz Integrated BW

−40

0.1 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 Measured in 1.2288 MHz Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.

0.01 0.001

(dB)

PROBABILITY (%)

10

−50 −60 −70

−ACPR in 30 kHz Integrated BW

+ACPR in 30 kHz Integrated BW

−80

0.0001 0

2

4

6

8

10

−90

PEAK−TO−AVERAGE (dB)

Figure 13. 2 - Carrier CCDF N - CDMA

−100 −7.5

−6

−4.5

−3

−1.5

0

1.5

3

4.5

6

7.5

f, FREQUENCY (MHz)

Figure 14. 2 - Carrier N - CDMA Spectrum


7

Zo = 10 Ω Zload f = 1990 MHz f = 1930 MHz f = 1990 MHz f = 1930 MHz Zsource

VDD = 28 Vdc, IDQ = 610 mA, Pout = 12 W Avg. f MHz

Zsource Ω

Zload Ω

1930

4.54 - j7.95

4.15 - j5.58

1960

4.33 - j7.74

4.17 - j5.34

1990

4.20 - j7.43

4.22 - j5.10

Zsource = Test circuit impedance as measured from gate to ground. Zload

= Test circuit impedance as measured from drain to ground.

Output Matching Network

Device Under Test

Input Matching Network

Z

source

Z

load

Figure 15. Series Equivalent Source and Load Impedance



NOTES


9

NOTES



NOTES


11

PACKAGE DIMENSIONS E1

B

A

2X

E3

GATE LEAD

DRAIN LEAD

D

D1 4X

e

4X

aaa

b1 C A

M

2X

2X

D2 c1

E

H

DATUM PLANE

F

ZONE J

A

A1 2X

A2

E2

NOTE 7

E5 E4

4

D3 3

ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ E5 BOTTOM VIEW

C

SEATING PLANE

PIN 5

NOTE 8

1

2

CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF6S19060NR1

NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO INCLUDE MOLD MISMATCH AND ARE DETER− MINED AT DATUM PLANE −H−. 5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE “b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG.

DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa

INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 −−− .551 .559 .353 .357 .132 .140 .124 .132 .270 −−− .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004

STYLE 1: PIN 1. 2. 3. 4. 5.

MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 −−− 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 −−− 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10

DRAIN DRAIN GATE GATE SOURCE




13




15

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MRF6S19060NR1 MRF6S19060NBR1 Document Number: MRF6S19060N

Rev. 3, 5/2006 16
