Design Rules & Fabrication - Computer Engineering

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Topics. ▫ Design rules and fabrication. ▫ SCMOS scalable design rules. ▫ Stick diagrams. Modern VLSI Design: Chap2. 2 of 31. Sharif University of Technology.
Design Rules & Fabrication Somayyeh Koohi Department of Computer Engineering Sharif University of Technology Adapted with modifications from lecture notes prepared by author

Topics Design rules and fabrication SCMOS scalable design rules Stick diagrams

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Why we need design rules Masks are tooling for manufacturing Manufacturing processes have inherent limitations in accuracy Design i rules l specify if geometry off masks k which hi h will ill provide reasonable yields Spacing Minimum-width rule Avoid small negative feature

Design rules are determined by experience Sharif University of Technology

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Manufacturing problems Photoresist shrinkage tearing Variations in material mask Variations in temperature V i ti Variations iin oxide id thi thickness k Variation in Vt

Impurities Variations between lots Lot consists of multiple wafer

Variations across a wafer Sharif University of Technology

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Transistor problems Variations in threshold voltage: oxide thickness ion implantation poly variations

Changes in source/drain diffusion overlap Variation in effective channel length

Variations in substrate Sharif University of Technology

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Wiring problems Diffusion: Changes in doping

variations in resistance, capacitance

Poly, metal: Variations in height, width capacitance

variations in resistance,

Shorts and opens:

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Oxide problems Variations in height Lack of planarity step coverage metal 2 metal 2

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metal 1

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Via problems Via may not be cut all the way through Undersize via has too much resistance Via may be too large and create short

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Topics Design rules and fabrication SCMOS scalable design rules Stick diagrams

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MOSIS SCMOS design rules 1. Designed to scale across a wide range of technologies 2 Designed to support multiple vendors 2. 3. Designed for educational use Therefore, fairly conservative

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and design rules 2 is the size of a minimum feature Specifying particularizes the scalable rules Parasitics are generally not specified in units µm-based design vs. -based design

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Scaling Scale all chip parameters by x: W’ -> W/x, L’ -> L/x, V’ -> V/x, etc.

Transistor current shrinks: I’/I = 1/x ((EQ. 2-28))

Capacitance shrinks Resistance unchanged So chip speeds up (C’V’/I’)/(CV/I) = 1/x

Shrinking makes chip faster and smaller

More later… Sharif University of Technology

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Wires 6

metal 3

3

metal 2

3

metal 1

3

pdiff/ndiff

2

poly

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Transistors 2 3

2 3 1

5

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Vias 4

4

Types of via:

1

metal1/diff metal1/poly metal1/metal2

2

No direct connection between metal2/metal3 and poly Connection through metal1 Sharif University of Technology

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Metal 3 via Type: metal3/metal2 Rules: cut: 3 x 3 overlap by metal2: 1 minimum spacing: 3 minimum spacing to via1: 2

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Tub tie Tub to power supply 4 1

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Spacings Diffusion/diffusion: 3 Poly/poly: 2 Poly/diffusion: y 1 Via/via: 2 Metal1/metal1: 3 Metal2/metal2: 4 Metal3/metal3: 4 Diffusion/tub wall: 5 Sharif University of Technology

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Topics Design rules and fabrication SCMOS scalable design rules Stick diagrams

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Stick diagrams Is a cartoon of a layout Shows All components/vias (except possibly tub ties) Relative placement

Not show Exact placement Transistor sizes Wire lengths Wire widths Tub boundaries Sharif University of Technology

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Stick diagrams (cont’d) Just horizontal & vertical lines Crossing materials: Similar: Connected Dissimilar: Unconnected Unless connection is established through a via

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Stick diagrams (cont’d) m2

m1

poly

ndiff

pdiff

Short

O

O

O

O

m2

O

Short

O

O

O

m1

O

O

Short

NMOS

PMOS

poly

O

O

O

Short

illegal

ndiff

O

O

O

O

Short

pdiff

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Stick layers metal 3 metal 2 metal 1 poly ndiff pdiff

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Dynamic latch stick diagram VDD

in

VSS

out

phi’

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phi Modern VLSI Design: Chap2

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Sticks design of multiplexer Start with NAND gate: +

out b

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a

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NAND sticks VDD a out

b

VSS Sharif University of Technology

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One-bit mux sticks VDD ai bi

a outt

N1 (NAND) b

a outt

select

select’

a

N1 (NAND) b

out

N1 (NAND) b

VSS Sharif University of Technology

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3-bit mux sticks select’

a2 b2

a1 b1 a0 b0

ai bi

ai bi ai bi

select’

select select

m2(one-bit-mux)

select’

select

m2(one-bit-mux) select’

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select

m2(one-bit-mux)

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VDD oi VSS

o2

VDD oi VSS

o1

VDD oi VSS

o0

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Layout design and analysis tools Layout editors are interactive tools Magic L-edit

Design rule checkers are generally batch identify DRC errors on the layout

Circuit extractors extract the netlist from the layout Connectivity verification systems (CVS) compare extracted and original netlists Sharif University of Technology

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Automatic layout Cell generators (macrocell generators) create optimized layouts for ALUs, etc. Standard cell/sea cell/sea-of-gates of gates layout creates layout from pre-designed cells + custom routing Sea-of-gates allows routing over the cell

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Standard cell layout

routing area rea Sharif University of Technology

routing area

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routing ting area

routing area

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