Oct 7, 2014 - of Gilman's concepts of dislocation mobility. The application of these concepts to the description of creep behavior in general is also discussed.
Dislocation Mobility and the SteadyState Creep of Crystals with Special Reference to Zirconium A. J. Ardell Citation: Journal of Applied Physics 37, 2910 (1966); doi: 10.1063/1.1782151 View online: http://dx.doi.org/10.1063/1.1782151 View Table of Contents: http://scitation.aip.org/content/aip/journal/jap/37/7?ver=pdfcov Published by the AIP Publishing Articles you may be interested in The Influence of Stoichiometric Defects and Foreign Atom Additions on SteadyState Creep in Lead Sulfide Single Crystals J. Appl. Phys. 39, 2869 (1968); 10.1063/1.1656686 HighTemperature SteadyState Creep Rate in SingleCrystal MgO J. Appl. Phys. 34, 1724 (1963); 10.1063/1.1702668 SteadyState Creep of Crystals J. Appl. Phys. 28, 1185 (1957); 10.1063/1.1722604 SteadyState Creep through Dislocation Climb J. Appl. Phys. 28, 362 (1957); 10.1063/1.1722747 Theory of SteadyState Creep Based on Dislocation Climb J. Appl. Phys. 26, 1213 (1955); 10.1063/1.1721875
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between the partly filled conduction band tail and the acceptor impurity banel. Compensation by indiffusing unidentifie(l acceptors, especially Cu, is unlikely here because it would also affect Te-doped material. eu-doped GaAs shows characteristic luminescence lines which were not observed with the samples described here. The heating in an atmosphere of essentially zero arsenic partial pressure causes outdiffusion of As. Arsenic vacancies diffuse from the surface inward and become occupied by the group IV element which will act as acceptor. The argument of amphoteric doping has also been used to explain conductivity type 8 and luminescence' of Ge-doped GaAs. The strong enhancement of radiative recombination efficiency in the compensated samples is caused by (1) an increase of the absorption coefficient a for hv
