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DTIC E
Physics and Applications of Quantum Wells and Su perlatt ices Edited by
E. E. Mendez and K. von Klitzing
>~K.
~NATO
ASI Series Series B: Physics Vol. 170
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Physics and Applications of Quantum Wells and Superlattices
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Series B: Physics
Physics and Applications of Quantum Wells and Superlattices Edited by
E. E. Mendez IBM Thomas J. Watson Research Center Yorktown Heights, New York and
K. von Klitzing Max Planck Institute for Solid State Research Stuttgart, Federal Republic of Germany
Plenum Press New York and London Published in cooperation with NATO Scientific Affairs Division
Proceedings of a NATO Advanced Study Institute on Physics and Applications of Quantum Wells and Superlattices, held April 21-May 1, 1987 in Erice, Sicily, Italy
Library of Congress Cataloging in Publication Data NATO Advanced Study Institute on Physics and Applications of Quantum Wells and Superlattices (1987: Erice, Sicily) Physics and applications of quantum wells and superlattices. (NATO ASI Series. Series B, Physics; vol. 170) "Proceedings of a NATO Advanced Study Institute on Physics and Applications of Quantum Wells and Superlattices, held April 21-May 1, 1987, in Erice, Sicily, Italy"-T.p. verso. "Published in cooperation with NATO Scientific Affairs Division." Includes bibliographical references and index. 1. Superlattices as materials-Congresses. 2. Quantum wells-Congresses. 3. Semiconductors-Congresses. 4. Molecular beam epitaxy-Congresses. I. Mendez, E. E. II. Klitzing, K. von. Ill. North Atlantic Treaty Organization. Scientific Affairs Division. IV. Title. V. Series. QC611.8.S86N38 1987 530.4'1 88-2510 ISBN 0-306-42823-7 '1c 1987 Plenum Press, New York A Division of Plenum Publishing Corporation 233 Spring Street, New York, N.Y. 10013
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PREFACE
This book contains the lectures delivered at the NATO Advanced Study Institute on "Physics and Applications of Quantum Wells and Superlattices", held in Erice, Italy, on April 21-May 1, 1987.
This
course was the fourth one of the International School of Solid-State Device Research, which is under the auspices of the Ettor
Majorana
Center for Scientific Culture.
In the last ten years, we have seen an enormous increase in research in the field of Semiconductor Heterostructures, as evidenced by the large percentage of papers presented in recent international conferences on semiconductor physics. Undoubtfully, this expansion has been made possible by dramatic advances in materials preparation, mostly by molecular beam epitaxy and organometallic chemical vapor deposition.
The emphasis on epitaxial growth that was prevalent at
the beginning of the decade
(thus, the second course of the School,
held in 1983, was devoted to Molecular Beam Epitaxy and Heterostructures) has given way to a strong interest in new physical phenomena and new material structures, and to practical applications that are already emerging from them.
The purpose of this Institute has been to address in an integrated form the basic physical concepts of semiconductor wells and superlattices, and their relation to technological applications based in these novel structures.
Although the goal has not been so much
to review the most recent results in the field, as to present the fundamental ideas and how they can be implemented in new devices, we hope that the reader will find these lectures also valuable as a resource of current research activity in the field.
After an introductory review of the evolution of semiconductor superlattices since their inception in 1969, the book is divided in four parts.
First, the electronic band structure of superlattices
is discussed in Chapter 2, followed by three chapters describing the use of molecular beam epitaxy to the growth of heterostructures based
on III-V, II-VI, and IV compounds, respectively.
The second part
focuses on their transport properties, both parallel and perpendicular to the interface direction. The drastic influence of a strong magnetic field on them -the best example of which is the quantum Hall effect- occupies a significant fraction of this section.
Part three is devoted to optical properties. The characteristics of radiative recombination are studied in Chapter 12, which also considers the principles of quantum-well lasers. The inelastic scattering of light by heterostructures is discussed in the next chapter, followed by a study of far-infrared absorption, and of the effect of a magnetic field on the optical properties.
Finally, part four presents applications of quantum wells and superlattices based on either their electrical or optical characteristics, including a discussion of devices that might integrate them both. We are thankful to A. Gabriele, who provided at the Ettore Majorana Center the right atmosphere for the celebration of a scientific retreat. We thank also L. Esaki, director of the School, for his support during the different phases of the Institute, and to L. L. Chang and K. Ploog, directors of a previous edition of the School, for their advice in the organization of the Course.
Finally, we are
grateful to the NATO Scientific Affairs Division, to the Italian Ministries of Education and Scientific and Technological Research, to the Sicilian Regional Government, to the U.S. Army European Research Office, to the European and American Physical Societies, and to International Business Machines, whose sponsorhip has made possible this International School.
V1
CONTENTS
INTRODUCTION A Perspective in Quantum-Structure Development ..... L. Esaki /
............ .I
BASIC PROPERTIES AND MATERIALS GROWTH A lectronic States in Semiconductor Heterostructures .. G. Bastard
.........
.21
"4Molecular Beam Epitaxy of Artificially Layered III-V Semiconductors on an Atomic Scale ..... ............... K. Ploog
.43
'%
Molecular Beam Epitaxial Growth and Properties of Hgbased Microstructures ......... ..................... J. P. Faurie
71
Strained Layer Superlattices ........ E. Kasper
101
....................
ELECTRICAL PROPERTIES Electrical Transport in Microstructures ..... F. Stern /
...............
-'
Physics of Resonant Tunneling in Semiconductors .... E. E. Mendez
-)
Thermodynamic and Magneto-Optic Investigations of the Landaulevel Density of States for 2D Electrons .... ........... E. Gornik
............
PHigh Field Magnetotransport: Lectures I and II: Analysis of Shubnikov-de Haas Oscillations and Parallel Field Magnetotransport ...... ................ R. J. Nicholas "Physics and Applications of The Quantum Hall Effect .. K. von Klitzing
.133
.........
High Field Magnetotransport: Lecture III: The Fractional Quantum Hall Effect ..... .............. R. J. Nicholas, R. G. Clark, A. Usher, 1. R. Mallett, A. M. Suckling, J. J. Harris, and C. T. Foxon
159
189
217
.229
249
"ii
OPTICAL PROPERTIES Properties of Quantum Wells..................261 C. Weisbuch
-~2optical
'~Raman Spectroscopy for the Study of Semiconductor HeteroStrUctures and Superlattices...............301 G. Abstreiter Par-Inlfrared Spectroscopy in Two-Dimensional Electronic Systems..............................317 D. Heitmann' Wells, Magneto-optical Properties of Heterojunctions, Quantum and Superlattices.........................34*7 .3. C. Maan
APPLICATIONS Band-gap Engineering for New Photoflic and Electronic Devices.............................
7
F. Capasso 'Hot-Electron Spectroscopy and Transistor Design.............393 M. Kelly 20Novel Tunneling Structures: Physics and Device ImpliMcations ................................ MJ. Kelly, R. A. Davies, N. R. Couch, B. Movaghar and T. M. Kerr
403
_ Z,
