Effect of the SiO2 interlayer properties with solid-source ... › publication › fulltext › Effect-of-t... › publication › fulltext › Effect-of-t...by B Nemeth · 2017 · Cited by 15 · Related articlestemperature” SiO2 and ~50 nm a-Si:H by PECVD, then ther
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7th International Conference on Silicon Photovoltaics, SiliconPV 2017 7th International Conference on Silicon Photovoltaics, SiliconPV 2017
Effect of the SiO2 interlayer properties with solid-source Effect of the SiO2 interlayer properties with solid-source hydrogenation passivated contact performance surface The 15th on International Symposium on District Heating and and Cooling hydrogenation on passivated contact performance and surface passivation passivation Assessing the feasibility of using the heat demand-outdoor a a a c Bill Nemetha, Steven P. Harvey , Jian V. Libb, David L. Young Upadhyaya aa a, Ajay c, temperature function for long-term district heat demand forecast Bill Nemeth , Steven P.a Harvey , Jian V. Lia , David L. Younga , Ajay Upadhyaya , a Vincenzo LaSalviaa, Benjamin G. Leea, Matthew R. Pagea, Paul Stradinsa Vincenzo LaSalvia , Benjamin G.a Lee , Matthew R. Page , Paul a b c Stradins I. Andrića,b,c*, A. aPina , P. Ferrão , J. Fournier Lacarrière , O. Le Correc NREL, 15013 Denver West Parkway, Golden, ., CO,B. 80401, USA
a
a NREL, 15013 Denver West Parkway, Golden, CO, 80401, USA USA b Texas State University, 601 University Drive, San Marcos, TX, 78666, IN+ Center for Innovation, bTechnology and Policy Research - Instituto Superior Técnico,TX, Av.78666, Rovisco Pais 1, 1049-001 Lisbon, Portugal Texas State University, 601 University Drive, San Marcos, c Georgia Institute of Technology, North Ave NW, Atlanta, GA 30332USA b Veolia Recherche & Innovation, 291 Avenue Dreyfous Daniel, 78520 Limay, France c Georgia Institute of Technology, North Ave NW, Atlanta, GA 30332 c Département Systèmes Énergétiques et Environnement - IMT Atlantique, 4 rue Alfred Kastler, 44300 Nantes, France
Abstract Abstract Abstract We investigate how SiOx oxide interlayers prepared by different techniques (chemical, thermal) in combination with hydrogen We investigate how SiOAl interlayers prepared by different techniques (chemical, thermal) in combination with hydrogen x oxide released from an ALD 2O3 source layer govern passivation in 1) passivated contacts based on doped poly-Si layers and District from heating networks are source commonly in the literature as one of the most effective for decreasing the layeraddressed govern passivation in 1) passivated contacts based on solutions doped poly-Si layers and released Al2O 3 andALD 2) wafer surface passivation by Al tunneling SiO2,an 2O3. Profiles of O and H in these structures with engineered, buried SiOx greenhouse gas emissions from the building sector. These systems of require high investments whichwith are engineered, returned through the heat , and 2) wafer surface passivation by Al O . Profiles O and H in these structures buried SiO tunneling SiO 2 measured by Time-of-Flight SIMS (TOF-SIMS) 2 3 interlayers were at nanometer resolution. Passivated contacts perform best withx sales. Duewere to the changed climate conditions and building renovation policies, heat Passivated demand incontacts the future couldbest decrease, interlayers measured by Time-of-Flight (TOF-SIMS) at nanometer resolution. perform with thermally oxidized SiOx, while chemical SiOSIMS x causes poly-Si film blistering and performance degradation. ALD Al2O3 acts as prolonging the investment return period. thermally oxidized SiO , while chemical SiO causes poly-Si film blistering and performance degradation. ALD Al O acts as x x 2 3 passivating H source, significantly improving B-doped and intrinsic poly-Si contacts for IBC cells. Fast-diffusing hydrogen from The main scope of this paper is toimproving assess the feasibilityand of intrinsic using thepoly-Si heat demand – outdoor function hydrogen for heat demand passivating H source, contacts for IBCoftemperature cells. Fast-diffusing from layersignificantly appears to penetrate SiB-doped wafer thickness, improving the passivation structures at the opposite side. In the Al2O3 source forecast. The district of Alvalade, located inwafer Lisbon (Portugal), was used as a case study. The district isopposite consistedside. of 665 layer appears to penetrate thickness, improving passivation of structures In the Al2Oto 3 source promotes waferthe surface passivation by ALDatAlthe contrast the passivated contacts, chemical Si SiOx interlayer 2O3, while similarly buildings thatpassivated vary in both construction period and typology. Threewafer weather scenarios (low, medium, high) and three district interlayer promotes surface passivation by ALD Al O , while similarly contrast to the contacts, chemical SiO x 2 3 charge. thin thermal SiO2 suppresses passivation and built-in renovation scenarios were developed (shallow, intermediate, deep). To estimate the error, obtained heat demand values were thin
