Efficient model-based parametric yield optimization - Infiniscale

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Efficient model-based parametric yield optimization. STForum. Thierry Lachaud. STMICROELECTRONICS. 16 rue Pierre et Marie CURIE. BP7155.
Efficient model-based parametric yield optimization STForum

Thierry Lachaud STMICROELECTRONICS 16 rue Pierre et Marie CURIE BP7155 37071 TOURS cedex2

Contents State of the art The InfiniScale flow - Modeling - Sizing - Parametrical Yield optimization

Application : LDO Conclusion

Today’s proposed solutions 1- Corners & Manual

2- Simulator-based

Electrical simulator

Optimizer

3- Global Model-based Electrical simulator

Modeler

Optimizer

Corners-based approach Large number of simulations Possible over-design Risky Sizing takes too much time Limited Yield at nanometer scale

Simulator-based Optimization Electrical simulator

Optimizer

1- Limited to very fast simulated circuits 2- Huge # of simulation 3- One-shot solution 4- Limited analysis possibility 5- Limited yield analysis 6- Possible over-design with worst-case optimization 7- But, simulator-proven

Global Model-based yielding Electrical simulator

Modeler

Optimizer

1. No over-design 2. Could consider D, P, VT, M SPECS = F(D,P,V,T,M) in the same time 3. Not limited to circuit size and the only-approach for long simualtion 4. Limited # of simulations 5. Full analysis capability 6. Global model-based optimization 7. Difficulty of full domain modeling! 8. Accuracy of models!

LYSISTM design flow Design environment Schematic editor Netlist or/and Raw data

Advanced modeling

Optimized design solution

Simulator of choice Eldo™ , Spectre™, HFSS™ Hspice, other ..

Lysis™

Import design

Simulation results

TechModeler™

Analysis, Optimization

TechAnalyzer™ TechSizer™

Yield Optimization

TechYielder™

TechModeler : WHAT IT DOES TM

Parameters DESIGN X1=LCHANN, X2=WCHANN … XN=R

CIRCUIT + SIMULATOR (Eldo™ , Spectre™, HFSS™ Hspice, other ..)

PROCESS + ENVIR.

TechModelerTM

P1=ToxN, P2=VthN … PM=Temp

MISMATCH M1, M2

PERFORMANCES Y1=Delay, Y2=Power, Y3=PSRR, YK=Gain

Yi = Fi(D,P,V,T,M)

LDO: Modeling

TechAnalyzerTM : EXPLORE YOUR DESIGN INPUT VARIABLES 

RANGES



DISTRIBUTION

TechAnalyzerTM MODEL: YK=FK(XN, VT, PM)

LCL

UCL

100% 80% 60% 40% 20% 0%

First order Total order

TechAnalyzerTM : EXPLORE YOUR DESIGN

MC analysis PLayer

TechSizerTM : Efficient Multi-objective optimizer INPUT RANGES & STATISTICS

INPUT & OUTPUT CONSTRAINTS SPECS & TARGETS

DESIGN SPACE

TechSizerTM OPTIMIZE: YK=FK(XN, VT, PM)

GLOBAL OPTIMIZATION

Realistic Corners

Minutes only to resize your design

OPTIMAL DESIGN

TechYielder : MAXIMIZE YOUR YIELD TM

INPUT RANGES & STATISTICS

CONSTRAINTS

TechYielderTM

SPECS & TARGETS

MAXIMIZE YIELD & ROBUSTNESS Robust design

High risk design FROM HERE

TO HERE

Global Model-based yielding LSL

USL

10000, 20000 MC, … or more! to estimate yield at each iteration

RESULTS LDO regulator: Performances: gain margin, phase margin, Power Supply Rejection Ratio (PSRR) at different frequencies

Modeling results With only 40 simulations for modeling Model

Mean relative error on modeling data

Phase margin

0.34%

Gain Margin

0.41%

PSRR 10Hz

0.1%

PSRR 10KHz

0.28%

Conclusion Behavioral Modeling: - Advanced Modeling of highly non linear phenomena - Accurate Modeling of high # of parameters - Automatic modeling of Analog circuits: D, P, VT, M

Model-based Sizing: -

Multi-objective optimization All parameters (inputs, outputs) could be constraint Simple and intuitive Mainly used for MEMS, Passive, RF, …

Model-based DFY: - Multi-objective statistical optimization - Design centering, Yield optimization, Risk Reduction - Approved on 90, 65 and 45n

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