Flicker Noise in Bilayer Graphene Transistors - arXiv

EDL-2008-11-1088

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Flicker Noise in Bilayer Graphene Transistors Q. Shao, G. Liu, D. Teweldebrhan, A. A. Balandin, S. Roumyantesv, M. Shur and D. Yan

Abstract—We present the results of the experimental investigation of the low-frequency noise in bilayer graphene transistors. The back-gated devices were fabricated using the electron beam lithography and evaporation. The charge neutrality point for the transistors was around +10 V. The noise spectra at frequencies f>10-100 Hz were of the 1/f type with the spectral density on the order of SI ~ 10-23-10-22 A2/Hz at the frequency of 1 kHz. The deviation from the 1/f spectrum at f10Hz and small gate voltages. At high gate voltages Vg>20V and at f1/(2πfo) ~ 0.3 – 1.1 sec. This implies that the contributions from the irregular shape peripherals of the graphene flake or from the bulk of the gate oxide, were significant. Based on our analysis, the noise in BLG transistors implemented with the state-of-the-art technology seems to be mostly influenced by the trap distribution and contact quality rather than by the specifics of BLG electronic band structure. The practical implication of this observation is that improvement in the oxide quality, surface passivation and accurate patterning of graphene will be crucial for noise reduction in the few-layer graphene devices.

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