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Growth and characteristics of type-II InAs/GaSb superlattice-based detectors A. Khoshakhlagh*, D. Z. Ting, A. Soibel, L. Höglund, J. Nguyen, S. A. Keo, A. Liao, and S. D. Gunapala Jet Propulsion Laboratory, California Institute of Technology
Abstract: We report on growth and device performance of infrared photodetectors based on type II InAs/Ga(In)Sb strain layer superlattices (SLs) using the complementary barrier infrared detector (CBIRD) design. The unipolar barriers on either side of the absorber in the CBIRD design in combination with the type-II InAs/GaSb superlattice material system are expected to outperform traditional III-V LWIR imaging technologies and offer significant advantages over the conventional II-VI material based FPAs. The innovative design of CBIRDS, low defect density material growth, and robust fabrication processes have resulted in the development of high performance long wave infrared (LWIR) focal plane arrays at JPL. Keywords: Unipolar barrier, infrared detectors, superlattice, long-wave
1.
Introduction:
The type-II InAs/GaSb superlattice (SL) system has been investigated as a promising system for infrared (IR) detection ever since it was proposed by Smith and Mailhiot [1] over three decades ago. In SL structures, the energy difference between the electron miniband and the first heavy-hole state at the Brillouin zone center defines the electronic bandgap; therefore the bandgap can be tailored by varying the thickness of the two constituent materials. Thus, the type-II InAs/GaSb SL cut-off wavelength can be tuned to span a broad spectrum from mid-infrared (MIR) to very long-infrared (VLIR) (3 µm
