LETTERS
Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers STUART S. P. PARKIN1*, CHRISTIAN KAISER1, ALEX PANCHULA1, PHILIP M. RICE1, BRIAN HUGHES2, MAHESH SAMANT1 AND SEE-HUN YANG1 1
IBM Research Division, 2Infineon Technologies, IBM Almaden Research Center, IBM-Infineon MRAM Development Alliance, 650 Harry Road, San Jose, California 95120, USA *e-mail:
[email protected]
Published online: 31 October 2004; doi:10.1038/nmat1256
agnetically engineered magnetic tunnel junctions (MTJs) show promise as non-volatile storage cells in high-performance solid-state magnetic random access memories (MRAM)1. The performance of these devices is currently limited by the modest (
