High Efficiency Dual Thyristor Triac - IXYS Power

CLA60MT1200NHB

High Efficiency Thyristor

VRRM

=

1200 V

I TAV

=

30 A

VT

=

1,25 V

Three Quadrants operation: QI - QIII 1~ Triac Part number

CLA60MT1200NHB

Backside: Terminal 2

Three Quadrants Operation T2

Positive Half Cycle +

(-) IGT

T2

(+) IGT T1 REF

IGT -

2

T2

T1

QII QI QIII QIV

REF + IGT

(-) IGT

3 1

T1 REF

Negative Half Cycle

Note: All Polarities are referenced to T1

Features / Advantages:

Applications:

Package: TO-247

● Triac for line frequency ● Three Quadrants Operation - QI - QIII ● Planar passivated chip ● Long-term stability of blocking currents and voltages

● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and temperature control

● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0

Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.

IXYS reserves the right to change limits, conditions and dimensions.

© 2015 IXYS all rights reserved

Data according to IEC 60747and per semiconductor unless otherwise specified

20150827d

CLA60MT1200NHB Ratings

Rectifier Conditions

Symbol VRSM/DSM

Definition

max. non-repetitive reverse/forward blocking voltage

TVJ = 25°C

VRRM/DRM

max. repetitive reverse/forward blocking voltage

TVJ = 25°C

1200

I R/D

reverse current, drain current

VT

forward voltage drop

TVJ = 25°C

10

µA

2

mA

TVJ = 25°C

1,28

V

1,56

V

1,25

V

IT =

30 A

IT =

60 A

IT =

30 A

IT =

60 A

I RMS

RMS forward current per phase

180° sine

VT0

threshold voltage

rT

slope resistance

R thJC

thermal resistance junction to case

TVJ = 125 °C

for power loss calculation only

thermal resistance case to heatsink total power dissipation

I TSM

max. forward surge current

value for fusing

V

TVJ = 125°C

TC = 120 °C

RthCH

max. Unit 1300 V

VR/D = 1200 V

average forward current

Ptot

typ.

VR/D = 1200 V

I TAV

I²t

min.

1,61

V

T VJ = 150 °C

30

A

66

A

TVJ = 150 °C

0,86

V

12,5

mΩ

0,55 K/W K/W

0,25 TC = 25°C

230

W

t = 10 ms; (50 Hz), sine

TVJ = 45°C

380

A

t = 8,3 ms; (60 Hz), sine

VR = 0 V

410

A

t = 10 ms; (50 Hz), sine

TVJ = 150 °C

325

A

t = 8,3 ms; (60 Hz), sine

VR = 0 V

350

A

t = 10 ms; (50 Hz), sine

TVJ = 45°C

720

A²s

t = 8,3 ms; (60 Hz), sine

VR = 0 V

700

A²s

t = 10 ms; (50 Hz), sine

TVJ = 150 °C

530

A²s

510

A²s

t = 8,3 ms; (60 Hz), sine

VR = 0 V

CJ

junction capacitance

VR = 400 V f = 1 MHz

TVJ = 25°C

PGM

max. gate power dissipation

t P = 30 µs

T C = 150 °C

25

t P = 300 µs PGAV

average gate power dissipation

(di/dt) cr

critical rate of rise of current

TVJ = 150 °C; f = 50 Hz repetitive, IT = t P = 200 µs; di G /dt = 0,3 A/µs;

90 A

IG =

30 A

(dv/dt)cr

critical rate of rise of voltage

V = ⅔ VDRM

VGT

gate trigger voltage

I GT

gate trigger current

VGD

gate non-trigger voltage

I GD

gate non-trigger current

IL

latching current

0,3 A; V = ⅔ VDRM

non-repet., I T =

pF 10

W

5

W

0,5

W

150 A/µs 500 A/µs

TVJ = 150°C

500 V/µs

VD = 6 V

TVJ = 25 °C

1,7

TVJ = -40 °C

1,9

V

VD = 6 V

TVJ = 25 °C

± 60

mA

TVJ = -40 °C

± 80

mA

TVJ = 150°C

0,2

V

±1

mA

TVJ = 25 °C

90

mA

R GK = ∞; method 1 (linear voltage rise)

VD = ⅔ VDRM tp =

10 µs

IG =

0,3 A; di G /dt =

V

0,3 A/µs

IH

holding current

VD = 6 V R GK = ∞

TVJ = 25 °C

60

mA

t gd

gate controlled delay time

VD = ½ VDRM

TVJ = 25 °C

2

µs

tq

turn-off time

IG =

0,3 A; di G /dt =

0,3 A/µs

VR = 100 V; I T = 30 A; V = ⅔ VDRM TVJ =125 °C di/dt = 10 A/µs dv/dt =



150

µs

20 V/µs t p = 200 µs


20150827d

CLA60MT1200NHB Package

Ratings

TO-247

Symbol I RMS

Definition

Conditions

RMS current

per terminal

min.

TVJ

virtual junction temperature

T op

operation temperature

Tstg

storage temperature

-40

typ.

max. 70

Unit A

-40

150

°C

-40

125

°C

150

°C

6

Weight MD

mounting torque

FC

mounting force with clip

Product Marking

C L A 60 MT 1200 N HB

XXXXXXXXX

Assembly Line

0,8

1,2

Nm

20

120

N

Part description

IXYS

Logo Part No.

g

= = = = = = = =

Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] 1~ Triac Reverse Voltage [V] Three Quadrants operation: QI - QIII TO-247AD (3)

Zyyww abcd

Assembly Code Date Code

Ordering Standard

Ordering Number CLA60MT1200NHB

Similar Part CLA60MT1200NHR CLA60MT1200NTZ

Equivalent Circuits for Simulation I

V0

R0

Package ISO247 (3) TO-268AA (D3Pak)

* on die level

Delivery Mode Tube

Quantity 30

Code No. 512073

Voltage class 1200 1200

T VJ = 150 °C

Thyristor

V 0 max

threshold voltage

0,86

R0 max

slope resistance *

10



Marking on Product CLA60MT1200NHB

V mΩ


20150827d

CLA60MT1200NHB Outlines TO-247 A

E

A2

Ø P1

ØP

D2

S

Q

D1 D 2x E2

4 1

2

3

L1

E1 L

2x b2 3x b

b4

C A1

2x e

Sym.

Inches min. max.

Millimeter min. max.

A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1

0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29

4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39

2

3 1




20150827d

CLA60MT1200NHB Thyristor 60

400

1000

VR = 0 V

50 40

300

IT

ITSM

TVJ = 45°C

30

[A]

[A] 20

TVJ = 45°C

2

It [A2s]

TVJ = 125°C

200 TVJ = 125°C TVJ = 125°C

10 TVJ = 150°C 0 0,0

TVJ = 25°C

0,5

1,0

1,5

50 Hz, 80% VRRM

100 2,0

0,01

100

0,1

VT [V]

1

1

t [s]

Fig. 3 I t versus time (1-10 s)

80

1: IGD, TVJ = 150°C

70

2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C

1

56

1 4

50

tgd

IT(AV)M

[µs]

[A]

40 10

5: PGM = 5 W 6: PGM = 10 W

lim.

100

1000

10000

10

typ.

1 10

0,1 10

30 20

4: PGAV = 0.5 W

1

dc = 1 0.5 0.4 0.33 0.17 0.08

60

TVJ = 125°C

100

23

[V]

4 5 6 7 8 910

t [ms]

1000

10

3

2

Fig. 2 Surge overload current ITSM: crest value, t: duration

Fig. 1 Forward characteristics

VG

2

0

100

1000

0

40

IG [mA]

IG [mA] Fig. 4 Gate voltage & gate current

Fig. 5 Gate controlled delay time tgd

60

80

120

160

Tcase [°C] Fig. 6 Max. forward current at case temperature

0,6

50

RthHA 0.6 0.8 1.0 2.0 4.0 8.0

dc = 1 0.5 0.4 0.33 0.17 0.08

40

P(AV) 30

0,4

ZthJC

[W]

i Rthi (K/W) 1 0.080 2 0.060 3 0.215 4 0.060 5 0.135

[K/W]

20

0,2

10 0 0

10

20

30

40 0

IT(AV) [A]

50

100

150

Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature


0,0 1

10

100

1000

10000

t [ms]

Tamb [°C]


ti (s) 0.0100 0.0001 0.0200 0.2000 0.1100

Fig. 7 Transient thermal impedance junction to case


20150827d