Jun 12, 1974 - J=KIaI+uE+eD dz' where D is the diffusion ... Using Einstein's relation eD= kTu/ne, the diffusion current in ... G. Chynoweth, Phys. Rev. 102, 705 ...
Highvoltage bulk photovoltaic effect and the photorefractive process in LiNbO3 A. M. Glass, D. von der Linde, and T. J. Negran Citation: Appl. Phys. Lett. 25, 233 (1974); doi: 10.1063/1.1655453 View online: http://dx.doi.org/10.1063/1.1655453 View Table of Contents: http://apl.aip.org/resource/1/APPLAB/v25/i4 Published by the AIP Publishing LLC.
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T. Tsujide: Drain-to-source breakdown voltage of n-channel FET
the larger the series resistance, the larger the hysteresis. This hysteresis is considered to be associated with the electron injection mentioned above. The repetition time of peak voltage of the curve tracer used in this experiment is 3 ms, which is long enough for electrons to be injected into the gate. Similar experiments for the p -channel FET have not yet been successful. The author wishes to express his sincere thanks to Dr. Y. Matsukura and Dr. S. Nakanuma for their advice and encouragement.
lSee , for example, H. Hara, Y. Okamoto, and H. Ohnuma, Jpn. J. Appl. Phys. 9, 1103 (1970); C.A. Neugebauer, J.F. Burgess, R.E. Joynson, andJ.L. Mundy, Appl. Phys. Lett. 19, 287 (1971). 2Se e , for example,
Y. Tarui, Y. Hayashi, and K. Nagai, Proceedings of the Conference on Solid-Slxlte Devices, Tokyo (Japan Society of Applied Physics, Tokyo, 1971), p. 156; D. Frohman-BentchowEky, Appl. Phys. Lett. 18, 332 (1971).
3T. Tsujide and T. Wada, The Electrochemical Society Spring Meeting, 1974 (unpublished). 4
