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Magnetization reversal process in Fe/Si (001) single-crystalline film investigated by planar Hall effect Ye Jun, He Wei, Hu Bo, Tang Jin, Zhang Yong-Sheng, Zhang Xiang-Qun, Chen Zi-Yu, Cheng Zhao-Hua Citation:Chin. Phys. B , 2015, 24(2): 027505. doi: 10.1088/1674-1056/24/2/027505

Journal homepage: http://cpb.iphy.ac.cn; http://iopscience.iop.org/cpb What follows is a list of articles you may be interested in

Dynamics of magnetic skyrmions Liu Ye-Hua, Li You-Quan Chin. Phys. B , 2015, 24(1): 017506. doi: 10.1088/1674-1056/24/1/017506

Effect of CoSi2 buffer layer on structure and magnetic properties of Co films grown on Si (001) substrate Hu Bo, He Wei, Ye Jun, Tang Jin, Syed Sheraz Ahmad, Zhang Xiang-Qun, Cheng Zhao-Hua Chin. Phys. B , 2015, 24(1): 017502. doi: 10.1088/1674-1056/24/1/017502

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Excellent soft magnetic properties realized in FeCoN thin films Zhang Lu-Ran,Lü Hua,Liu Xi,Bai Jian-Min,Wei Fu-Lin Chin. Phys. B , 2012, 21(3): 037502. doi: 10.1088/1674-1056/21/3/037502 ---------------------------------------------------------------------------------------------------------------------

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辑 Editorial Staff 王久丽 Wang Jiu-Li

章志英 Zhang Zhi-Ying

蔡建伟 Cai Jian-Wei

翟 振 Zhai Zhen

郭红丽 Guo Hong-Li

Chin. Phys. B Vol. 24, No. 2 (2015) 027505

Magnetization reversal process in Fe/Si (001) single-crystalline film investigated by planar Hall effect∗ Ye Jun(叶 军)a)b) , He Wei(何 为)b) , Hu Bo(胡 泊)b) , Tang Jin(汤 进)b) , Zhang Yong-Sheng(张永圣)b) , Zhang Xiang-Qun(张向群)b) , Chen Zi-Yu(陈子瑜)a)† , and Cheng Zhao-Hua(成昭华)b)‡ a) Department of Physics, Beihang University, Beijing 100191, China b) State Key Laboratory of Magnetism and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China (Received 22 September 2014; revised manuscript received 15 October 2014; published online 10 December 2014)

A planar Hall effect (PHE) is introduced to investigate the magnetization reversal process in single-crystalline iron film grown on a Si (001) substrate. Owing to the domain structure of iron film and the characteristics of PHE, the magnetization switches sharply in an angular range of the external field for two steps of 90◦ domain wall displacement and one step of 180◦ domain wall displacement near the easy axis, respectively. However, the magnetization reversal process near the hard axis is completed by only one step of 90◦ domain wall displacement and then rotates coherently. The magnetization reversal process mechanism near the hard axis seems to be a combination of coherent rotation and domain wall displacement. Furthermore, the domain wall pinning energy and uniaxial magnetic anisotropy energy can also be derived from the PHE measurement.

Keywords: magnetic thin film, domain wall displacement, planar Hall effect PACS: 75.70.Ak, 75.70.Kw, 75.30.Gw, 75.47.–m

DOI: 10.1088/1674-1056/24/2/027505

1. Introduction The properties of magnetic thin films grown on silicon have been investigated by amounts of work in the past decades, because of their applications in the integration of magnetic devices in silicon technology and new opportunities in spintronics, [1,2] especially the magnetization reversal process of iron films. [3–5] For an Fe (001) film, the domain wall displacement always dominates the magnetization reversal process and sometimes coherent rotation will participate in the reversal process in a high external field or near the easy axis of film. [6,7] The magneto-optic Kerr effect (MOKE) is always one of the prior choices to explore the detailed information, but the complicated optical path restricts its application in micro-devices. At the same time, the transport measurement has been developed for decades and has widely been used in silicon-based devices. [8,9] So it is necessary to investigate the magnetization reversal process of Fe/Si (001) film by the planar Hall effect (PHE). In our previous work, the MOKE was chosen to investigate the domain wall displacement process of Fe/Si (001) film. Different domain wall displacement processes can be induced in one hysteresis loop with a weak bias field. [10] Furthermore, we find that the magnetization reversal process of Fe/Si (001) film has been proved to be the combination of coherent rotation and domain wall displacement when the external field is smaller than the anisotropy field by torque measurement

with anisotropic magnetoresistance. [11] In the present work, the 40-ML single crystal iron film is reported to be grown on a vicinal Si (001) substrate using a flat ultrathin c(2 × 2) iron silicide seed layer and the PHE is used to investigate the magnetization reversal process and determine the domain wall pinning energy. The magnetization reversal process is found to be dominated by different mechanisms at different external field angles. The fitting results of domain wall pinning energy by planar Hall resistance (PHR) show good consistency with the theoretical model.

2. Experiments The sample was grown on a Si (001) substrate using an ultrahigh vacuum molecular beam epitaxial (MBE) chamber equipped with low-energy electron diffraction (LEED). The Si (001) substrate was first well baked out and then flashed, and the well-fined Si (001)-2×1 surface was obtained. [12] Then, the buffer layer was deposited on the wafer by e-beam bombardment with 2 ML of Fe (99.999% purity), and annealed at 550 ◦ C for 5 minutes. [13] This procedure gives a highly ordered 2×2 periodic iron silicide structure to prevent the Fe/Si intermixing. The 40-ML Fe film was deposited on the iron silicide template. The epitaxial relationships among the Fe layer, the iron silicide template, and the Si (001) substrate are as follows: [13,14] Fe(001)k c(2 × 2)FeSi2 (001)kSi (001) and Fe [100]k c(2 × 2)FeSi2 [010]kSi[110]. A nonmagnetic Cu

∗ Project supported by the National Basic Research Program of China (Grant Nos. 2011CB921801 and 2012CB933102), the National Natural Science Foundation

of China (Grant Nos. 11374350, 11034004, 11274361, 11274033, 11474015, and 61227902), and the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20131102130005). † Corresponding author. E-mail: [email protected] ‡ Corresponding author. E-mail: [email protected] © 2015 Chinese Physical Society and IOP Publishing Ltd http://iopscience.iop.org/cpb　 　http://cpb.iphy.ac.cn

027505-1

Chin. Phys. B Vol. 24, No. 2 (2015) 027505 layer with a thickness of 25 ML was deposited on the sample as a capping layer to protect the sample from being oxidized. In the process of growth, the base pressure was around 2×10−10 mbar (1 bar = 105 Pa) and the substrate was kept at room temperature. After the MOKE measurements, photolithography was used to etch the sample into an 8-probe Hall geometry with the long axis oriented along the Fe [110] axis. The PHR was measured in the direction perpendicular to the current and the current applied to the sample was 5 mA.

3. Results and discussion Figure 1(a) shows the coordinate system used in MOKE and PHE measurements. The current flows in the Fe [110] direction, so that the PHE effect can obtain its maximum or minimum value at an easy axis where the magnetization prefers to stay. We measure the Hall voltage Vxy perpendicular to the current direction to calculate the PHR. θ and 𝜙 are the angles of magnetization and external field with respect to the Fe [100] axis direction, respectively. Figure 1(b) shows the LEED pattern of the iron film grown on the Si (001) substrate. The sharp cubic symmetric spots of the LEED pattern indicate the bcc structure iron film with a thickness of 40 ML. [12,15]

(a)

[] H M ϕ

The hysteresis loops of the Fe/Si (001) film are first measured by MOKE. Figure 2 shows the typical hysteresis loops at external field angle 𝜙 = 0◦ , 9◦ , 36◦ , and 45◦ , respectively. The loop at 𝜙 = 0◦ is a typical 1-jump magnetization reversal process induced by 180◦ domain wall displacement, and the hysteresis loop at 𝜙 = 36◦ is a typical 2-jump magnetization reversal process induced twice by 90◦ domain wall displacement, respectively. [16] The slight unsymmetry of the loop may be induced by the influence of the weak field from the surroundings. [10] Though the hysteresis loop at 𝜙 = 0◦ seems to be saturated and the one at 𝜙 = 45◦ seems to be hard to reach saturation, they both show the 1-jump magnetization reversal process. They should have different meanings, because the directions of the external field are at the easy axis and hard axis, respectively. Furthermore, we cannot judge whether the loop at 𝜙 = 9◦ is a 1 or 2-jump magnetization reversal process. Apparently, the magnetization almost stays near the easy axis, because the loops do not show any coherent rotation information and the easy axis is the minimum energy position of the system. When 𝜙 = 9◦ and the external field reaches a positive maximum, the magnetization stays in the Fe [100] direction. As the external field decreases, the magnetization ¯ direction preferentially in energy and jumps to the Fe [010] ¯ then jumps to the Fe [100] direction for the 2-jump process ¯ or jumps to the Fe [100] direction directly for the 1-jump process. For the 2-jump process, the external field range of the ¯ axis depends on magnetization staying at Fe [010] or Fe [010] the system energy. The MOKE signal is in direct proportion to ¯ cos(θ − 𝜙), [17] if magnetization stays at Fe [010] or Fe [010] axis too short a time, we cannot observe the 2-jump process. The PHE measurement may overcome this shortage.

θ

I

ϕ=45Ο [100]

Vxy

Kerr signal/arb. units

ϕ=36Ο

(b)

ϕ=9Ο

ϕ=0Ο

-2

46 eV Fig. 1. (color online) (a) Coordinate system used in MOKE and PHE measurements, and (b) LEED pattern of 40-ML iron film grown on a Si (001) substrate.

-1

0

1

2

Magnetic field/104 ASm-1 Fig. 2. (color online) Typical hysteresis loops of the Fe/Si (001) film, measured by MOKE at external field angle 𝜙 = 0◦ , 9◦ , 27◦ , 36◦ , and 45◦ , respectively.

027505-2

Chin. Phys. B Vol. 24, No. 2 (2015) 027505 − µ0 MH cos(θ − 𝜙),

In a single crystalline system, the PHR can be expressed 1 Rxy = ∆R sin(2θ −90◦ ). (1) 2 Unlike the MOKE measurement, the variation of the PHR value is twice as fast. That is to say, the PHR reaches its mini¯ mum value in the Fe [100] or Fe [100] direction, and its max¯ direction. For the 90◦ imum value in the Fe [010] or Fe [010] or 180◦ domain wall magnetization reversal process, we can judge it from the PHR curve directly. Figure 3 shows the corresponding PHR curves at 𝜙 = 0◦ , 9◦ , 36◦ , and 45◦ . It is obvious that the PHR curve at 𝜙 = 0◦ presents a 1-jump process with 180◦ domain wall displacement and the PHR curves at 𝜙 = 9◦ , 27◦ , and 36◦ exhibit the 90◦ domain wall magnetization reversal processes. For the curve at 𝜙 = 45◦ , the PHR value changes to maximum at the external field H = ±800 A/m and does not change to minimum at the negative maximum field, which indicates that it needs an even higher field to saturate the iron ¯ film. The magnetization only switches to Fe [010] or Fe [010] ¯ axis, when the axis and rotates around Fe [010] or Fe [010] external field increases from the negative field, it switches to Fe [100] again. The curve at 𝜙 = 0◦ is a straight line, which does not mean that the magnetization stays static. Because the 1-jump process is dominated by 180◦ domain wall displacement, according to Eq. (1) the value Rxy will not change when the direction of magnetization θ changes 180◦ . The advantage of PHE measurement is proved at 𝜙 = 9◦ compared with the corresponding hysteresis loop by MOKE measurement. There are two sharp peaks at the coercivity position by PHE measurement, nevertheless the hysteresis loop does not show a clear hesitation near the coercivity position by MOKE. That is because the value of PHR has significantly changed when the direction of magnetization changes 90◦ . Therefore, the PHE can be used to identify the 90◦ domain wall and 180◦ domain wall displacement with higher accuracy than MOKE measurement. It can also help to determine the domain wall pinning energy. At high fields of hysteresis loops at 𝜙 = 36◦ and 45◦ , the curves do not show a horizontal line compared with the hysteresis loops at 𝜙 = 0◦ and 9◦ , they are lines with a bit of an incline, which indicates that the coherent rotation happens at high field in the single crystalline iron film. As the thin film epitaxially grows on substrates, it may induce a weak uniaxial magnetic anisotropy (UMA) because of the stress, lattice mismatch or other effects. [18–20] Here, we consider the first cubic magnetocrystalline anisotropy (MCA), the UMA, and the Zeeman energy for Fe/Si (001) film. In general, the orientation of the UMA can be along any direction, so we separate it into two components: Ku1 along Fe [100] and Ku2 along Fe [110]. [21] The total free energy density of the system with an external field H is described as   π K1 2 E = Ku1 sin2 θ + Ku2 sin2 θ − + sin 2θ 4 4

(2)

where the first and the second terms are the UMA energies along the directions [100] and [110], respectively. The third term is the first cubic MCA energy. The fourth term is the Zeeman energy of external field H. Ku1 and Ku2 are the UMA constants and K1 is the first cubic MCA constant. M is the saturation magnetization of iron.

ϕ=45Ο

ϕ=36Ο

PHR/W

as [9]

ϕ=9Ο

5

ϕ=0Ο

0 -5 -2

-1

0

1

2

Magnetic field/104 ASm-1 Fig. 3. (color online) Typical PHE curves at external field angle 𝜙 = 0◦ , 9◦ , 27◦ , 36◦ , and 45◦ , respectively.

The magnetization will always rotate to a local minimum energy E(θ ) for a given field when it obeys the Stoner– Wohlfarth model. However, the magnetization will be unpinned and switched to another local minimum energy due to the existence of domain structure. [22,23] In the previous work, the UMA in Fe/Si (001) is very small compared with the MCA and the domain wall pinning energy. [10,11] Due to the existence of Ku2 , the local minima position will shift a small angle δ , so we set the local minima of Eq. (2) to be at θ = −δ , 90◦ + δ , 180◦ − δ , and 270◦ + δ , where δ = 21 sin−1 (Ku2 /K1 ). [24,25] According to Refs. [25] and [26], in the range 𝜙 = 0◦ –45◦ , we can calculate the coercivity field of the magnetization reversal process. For the 1-jump process, Hc =

ε180◦ , (0 ≤ 𝜙 ≤ 45◦ ), 2µ0 M cos(𝜙 + δ )

(3)

and for the 2-jump process, Hc1 =

ε90◦ −2δ + Ku1 (cos2 δ − sin2 δ ) , (0 ≤ 𝜙 ≤ 45◦ ), µ0 M(cos(𝜙 + δ ) + sin(𝜙 − δ ))

(4)

Hc2 =

ε90◦ +2δ − Ku1 (cos2 δ − sin2 δ ) , (≤ 𝜙 ≤ 45◦ ), µ0 M(cos(𝜙 + δ ) − sin(𝜙 − δ ))

(5)

027505-3

Chin. Phys. B Vol. 24, No. 2 (2015) 027505 where ε90◦ −2δ , ε90◦ +2δ , and ε180◦ are the pinning energies for the 2-jump and 1-jump magnetization reversal process. For other ranges of 𝜙 we can calculate the coercivity expressions in different ranges of external fields by changing the angle in steps of 45◦ . Figure 4 shows the fitting results of Eqs. (4) and (5) from the PHE measurement. As the PHE can only show the coercivity of the 90◦ domain wall displacement process, no coercivity is induced by the 180◦ domain wall displacement. It is an excellent correspondence between theoretical calculations and experimental measurements. Also, we can calculate the domain wall pinning energies ε90◦ −2δ /µ0 M = 1.03 × 103 A/m, ε90◦ +2δ /µ0 M = 1.15 × 103 A/m, δ = −0.5◦ , and Ku1 /µ0 M = −80 A/m. We can also calculate the domain wall pinning energy from the hysteresis loops from the MOKE measurement, which is consistent with the one from the PHR measurement, and ε180◦ /µ0 M = 1.83 × 103 A/m. As predicted in Ref. [16], 2ε90◦ > ε180◦ will induce a 1-jump magnetization reversal process in a certain angular range, and this range depends on how much greater than ε180◦ the 2ε90◦ is. Here, the values of 2ε90◦ −2δ and 2ε90◦ +2δ have no big difference from ε180◦ , which explains why there exists so wide an angular range of the 2-jump switching process.

Coercivity/104 ASm-1

1.2 Hc1 Hc2 0.8

0.4

0

0

120

240

360

ϕ/(Ο) Fig. 4. (color online) Experimentally measured coercivities (points) by PHE and the fitted values (lines).

4. Conclusions In this paper, we investigate the magnetization reversal process of 40-ML iron films grown on Si (001) substrates. The MOKE measurement shows typical 90◦ and 180◦ domain wall displacements when scanning the external field. However, the linear feature of MOKE measurement leads to an indistinct area between these two domain wall displacements at certain

external field angles. The PHE overcomes this shortage, and shows clearly the magnetization reversal process. Especially, there are both coherent rotation and domain wall displacement near the hard axis. The domain wall pinning energy and UMA can also be determined accurately from the MOKE and PHE measurements.

References [1] Wawro A, Suto S, Czajka R and Kasuya A 2008 Nanotechnology 19 205706 ˇ c I, Fabian J and Sarma S D 2004 Rev. Mod. Phys. 76 323 [2] Zuti´ [3] Liu H L, He W, Du H F, Fang Y P, Wu Q, Zhang X Q, Yang H T and Cheng Z H 2012 Chin. Phys. B 21 077503 [4] Garreau G, Hajjar S, Bubendorff J L, Pirri C, Berling D, Mehdaoui A, Stephan R, Wetzel P, Zabrocki S, Gewinner G, Boukari S and Beaurepaire E 2005 Phys. Rev. B 71 094430 [5] Komogortsev S V, Varnakov S N, Satsuk S A, Yakovlev I A and Ovchinnikov S G 2014 J. Magn. Magn. Mater. 351 104 [6] Cowburn R P, Gray S J and Bland J A C 1997 Phys. Rev. Lett. 79 4018 [7] Cantoni M, Riva M, Bertacco R and Ciccacci F 2006 Phys. Rev. B 74 134415 [8] Adeyeye A, Win M T, Tan T A, Chong G S, Ng V and Low T S 2004 Sensors and Actuators A: Physical 116 95 [9] McGuire T R and Potter R I 1975 IEEE Trans. Magn. 11 1018 [10] Ye J, He W, Wu Q, Hu B, Tang J, Zhang X Q, Chen Z Y and Cheng Z H 2014 J. Appl. Phys. 115 123910 [11] Ye J, He W, Wu Q, Hu B, Tang J, Zhang X Q, Chen Z Y and Cheng Z H 2014 Appl. Phys. Lett. 105 102406 [12] Bertoncini P, Wetzel P, Berling D, Mehdaoui A, Loegel B, Gewinner G, Poinsot R and Pierron-Bohnes V 2001 J. Magn. Magn. Mater. 237 191 [13] Geib K M, Mahan J E, Long R G, Nathan M and Bai G 1991 J. Appl. Phys. 70 1730 [14] Mahan J E, Geib K M, Robinson G Y, Long R G, Xinghua Y, Bai G, Nicolet M A and Nathan M 1990 Appl. Phys. Lett. 56 2126 [15] Bertoncini P, Berling D, Wetzel P, Mehdaoui A, Loegel B, Gewinner G, Ulhaq-Bouillet C and Pierron-Bohnes V 2000 Surf. Sci. 454/456 755 [16] Cowburn R P, Gray S J, Ferre´e J, Bland J A C and Miltat J 1995 J. Appl. Phys. 78 7210 [17] Qiu Z Q and Bader S D 1999 J. Magn. Magn. Mater. 200 664 [18] Zhao H B, Talbayev D, L¨upke G, Hanbicki A T, Li C H, van’t Erve M J, Kioseoglou G and Jonker B T 2005 Phys. Rev. Lett. 95 137202 [19] Freeland J W, Coulthard I, Antel W J and Stampfl A P J 2001 Phys. Rev. B 63 193301 [20] Wu Y Z, Won C and Qiu Z Q 2002 Phys. Rev. B 65 184419 [21] Pappert K, Gould C, Sawicki M, Wenisch J, Brunner K, Schmidt G and Molenkamp L W 2007 New J. Phys. 9 354 [22] Yan S S, Schreiber R, Gr¨unberg P and Sch¨afer R 2000 J. Magn. Magn. Mater. 210 309 [23] Zhan Q F, Vandezande S, Temst K and Van Haesendonck C 2009 New J. Phys. 11 063003 [24] Daboo C, Hicken R J, Gu E, Gester M, Gray S J, Eley D E P, Ahmad E, Bland J A C, Ploessl R and Chapman J 1995 Phys. Rev. B 51 15964 [25] Zhan Q F, Vandezande S, Van Haesendonck C and Temst K 2007 Appl. Phys. Lett. 91 122510 [26] Zhan Q F, Vandezande S, Temst K and Van Haesendonck C 2009 Phys. Rev. B 80 094416

027505-4

Chinese Physics B Volume 24

Number 2

February 2015

RAPID COMMUNICATION 020505

Onsager principle as a tool for approximation

026103

Masao Doi The influence of ablation products on the ablation resistance of C/C–SiC composites and the growth mechanism of SiO2 nanowires Li Xian-Hui, Yan Qing-Zhi, Mi Ying-Ying, Han Yong-Jun, Wen Xin and Ge Chang-Chun GENERAL

020201

Conservation laws of the generalized short pulse equation Zhang Zhi-Yong and Chen Yu-Fu

020202

Self-adjusting entropy-stable scheme for compressible Euler equations Cheng Xiao-Han, Nie Yu-Feng, Feng Jian-Hu, Luo Xiao-Yu and Cai Li

020203

Containment consensus with measurement noises and time-varying communication delays Zhou Feng, Wang Zheng-Jie and Fan Ning-Jun

020204

Response of a Duffing Rayleigh system with a fractional derivative under Gaussian white noise excitation Zhang Ran-Ran, Xu Wei, Yang Gui-Dong and Han Qun

020301

From fractional Fourier transformation to quantum mechanical fractional squeezing transformation Lv Cui-Hong, Fan Hong-Yi and Li Dong-Wei

020302

Unified treatment of the bound states of the Schi¨oberg and the Eckart potentials using Feynman path integral approach

020303

A. Diaf Two-electron quantum ring in short pulses Poonam Silotia, Rakesh Kumar Meena and Vinod Prasad

020304

Quantum communication for satellite-to-ground networks with partially entangled states Chen Na, Quan Dong-Xiao, Pei Chang-Xing and Yang-Hong

020305

Time-bin-encoding-based remote states generation of nitrogen-vacancy centers through noisy channels Su Shi-Lei, Chen Li, Guo Qi, Wang Hong-Fu, Zhu Ai-Dong and Zhang Shou

020401

Concrete quantum tunneling spectrum of Schwarzschild black holes Chen Si-Na and Zhang Jing-Yi

020501

Applications of modularized circuit designs in a new hyper-chaotic system circuit implementation Wang Rui, Sun Hui, Wang Jie-Zhi, Wang Lu and Wang Yan-Chao

020502

Complex dynamics analysis of impulsively coupled Duffing oscillators with ring structure Jiang Hai-Bo, Zhang Li-Ping and Yu Jian-Jiang (Continued on the Bookbinding Inside Back Cover)

020503

Recursion-transform approach to compute the resistance of a resistor network with an arbitrary boundary Tan Zhi-Zhong

020504

Antagonistic formation motion of cooperative agents Lu Wan-Ting, Dai Ming-Xiang and Xue Fang-Zheng

020701

Computer simulation of the bombardment of a copper film on graphene with argon clusters

020702

A. Y. Galashev and O.R. Rakhmanova Estimation of spatially distributed processes using mobile sensor networks with missing measurements Jiang Zheng-Xian and Cui Bao-Tong ATOMIC AND MOLECULAR PHYSICS

023201

Selection of quantum path in high-order harmonics and isolated sub-100 attosecond generation in fewcycle spatially inhomogeneous laser fields Ge Xin-Lei, Du Hui, Wang Qun, Guo Jing and Liu Xue-Shen

023301

Responsive mechanism of 2-(20 -hydroxyphenyl)benzoxazole-based two-photon fluorescent probes for zinc and hydroxide ions Zhang Yu-Jin, Zhang Qiu-Yue, Ding Hong-Juan, Song Xiu-Neng and Wang Chuan-Kui ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS

024101

Uniform stable conformal convolutional perfectly matched layer for enlarged cell technique conformal finite-difference time-domain method Wang Yue, Wang Jian-Guo and Chen Zai-Gao

024201

Influence of the illumination coherency and illumination aperture on the ptychographic iterative microscopy Liu Cheng, Zhu Jian-Qiang and John Rodenburg

024202

Phase modulation pseudocolor encoding ghost imaging Duan De-Yang, Zhang Lu, Du Shao-Jiang and Xia Yun-Jie

024203

Comparison of two absorption imaging methods to detect cold atoms in magnetic trap Wang Yan, Hu Zhao-Hui and Qi Lu

024204

Photon counting statistics of V-type three-level systems: The effects of the field fluctuations Peng Yong-Gang and Zheng Yu-Jun

024205

Position-dependent property of resonant dipole dipole interaction mediated by localized surface plasmon of an Ag nanosphere Xu Dan, Wang Xiao-Yun, Huang Yong-Gang, Ouyang Shi-Liang, He Hai-Long and He Hao

024206

Frequency-locking and threshold current-lowering effects of a quantum cascade laser and an application in gas detection field Chen Wei-Gen, Wan Fu, Zou Jing-Xin, Gu Zhao-Liang and Zhou Qu

024207

A novel method of evaluating large mode area fiber design by brightness factor Zhang Hai-Tao, Chen Dan, Ren Hai-Cui, Yan Ping and Gong Ma-Li (Continued on the Bookbinding Inside Back Cover)

024208

Theoretical analysis of the mode coupling induced by heat of large-pitch micro-structured fibers Zhang Hai-Tao, Chen Dan, Hao Jie, Yan Ping and Gong Ma-Li

024209

Optimal oxide-aperture for improving the power conversion efficiency of VCSEL arrays Wang Wen-Juan, Li Chong, Zhou Hong-Yi, Wu Hua, Luan Xin-Xin, Shi Lei and Guo Xia

024210

Power-induced polarization switching and bistability characteristics in 1550-nm VCSELs subjected to orthogonal optical injection Chen Jian-Jun, Xia Guang-Qiong and Wu Zheng-Mao

024211

Theoretical study of the optical gain characteristics of a Ge1−𝑥 Sn𝑥 alloy for a short-wave infrared laser Zhang Dong-Liang, Cheng Bu-Wen, Xue Chun-Lai, Zhang Xu, Cong Hui, Liu Zhi, Zhang Guang-Ze and Wang Qi-Ming

024212

Very low threshold operation of quantum cascade lasers Yan Fang-Liang, Zhang Jin-Chuan, Yao Dan-Yang, Liu Feng-Qi, Wang Li-Jun, Liu Jun-Qi and Wang Zhan-

024213

Guo A 23.75-GHz frequency comb with two low-finesse filtering cavities in series for high resolution spectroscopy Hou Lei, Han Hai-Nian, Wang Wei, Zhang Long, Pang Li-Hui, Li De-Hua and Wei Zhi-Yi

024214

Tandem-pumped 1120-nm actively Q-switched fiber laser Wang Jian-Hua, Hu Jin-Meng, Zhang Shi-Qiang, Chen Lu-Lu, Fang Yong, Feng Yan and Li Zhi

024215

1.12-W Q-switched Yb:KGW laser based on transmission-type Bi2 Se3 saturable absorber Liu Jing-Hui, Tian Jin-Rong, Hu Meng-Ting, Xu Run-Qin, Dou Zhi-Yuan, Yu Zhen-Hua and Song Yan-Rong

024216

Walk-off reduction, using an external optical plate and Bessel Gaussian interaction Masoume Mansouri, Mohsen Askarbioki, Saeed Ghavami Sabouri and Alireza Khorsandi

024217

Fiber laser pumped burst-mode operated picosecond mid-infrared laser Wei Kai-Hua, Jiang Pei-Pei, Wu Bo, Chen Tao and Shen Yong-Hang

024218

Correction of temperature influence on the wind retrieval from a mobile Rayleigh Doppler lidar Zhao Ruo-Can, Xia Hai-Yun, Dou Xian-Kang, Sun Dong-Song, Han Yu-Li, Shangguan Ming-Jia, Guo Jie and Shu Zhi-Feng

024219

Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wells Wang Qiang, Ji Zi-Wu, Wang Fan, Mu Qi, Zheng Yu-Jun, Xu Xian-Gang, L¨u Yuan-Jie and Feng Zhi-Hong

024220

ATR-FTIR spectroscopic studies on density changes of fused silica induced by localized CO2 laser treatment Zhang Chuan-Chao, Zhang Li-Juan, Liao Wei, Yan Zhong-Hua, Chen Jing, Jiang Yi-Lan, Wang Hai-Jun, Luan Xiao-Yu, Ye Ya-Yun, Zheng Wan-Guo and Yuan Xiao-Dong

024221

First-principles study of structure and nonlinear optical properties of CdHg(SCN)4 crystal Zhang Peng, Kong Chui-Gang, Zheng Chao, Wang Xin-Qiang, Ma Yue, Feng Jin-Bo, Jiao Yu-Qiu and Lu

024222

Gui-Wu Exciplex formation and electroluminescent absorption in ultraviolet organic light-emitting diodes Zhang Qi, Zhang Hao, Zhang Xiao-Wen, Xu Tao and Wei Bin (Continued on the Bookbinding Inside Back Cover)

024301

Controlling an acoustic wave with a cylindrically-symmetric gradient-index system Zhang Zhe, Li Rui-Qi, Liang Bin, Zou Xin-Ye and Cheng Jian-Chun

024302

Study of acoustic bubble cluster dynamics using a lattice Boltzmann model Mahdi Daemi, Mohammad Taeibi-Rahni and Hamidreza Massah

024303

Homogenization theory for designing graded viscoelastic sonic crystals Qu Zhao-Liang, Ren Chun-Yu, Pei Yong-Mao and Fang Dai-Ning

024304

Pulse decomposition-based analysis of PAT/TAT error caused by negative lobes in limited-view conditions Liu Liang-Bing, Tao Chao, Liu Xiao-Jun, Li Xian-Li and Zhang Hai-Tao PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES

025101

Short-pulse high-power microwave breakdown at high pressures Zhao Peng-Cheng, Liao Cheng and Feng Ju

025201

Landau damping in a bounded magnetized plasma column H. Zakeri-Khatir and F. M. Aghamir

025202

Relativistic degenerate effects of electrons and positrons on modulational instability of quantum ion acoustic waves in dense plasmas with two polarity ions Liu Tie-Lu, Wang Yun-Liang and Lu Yan-Zhen

025203

Pulsed microwave-driven argon plasma jet with distinctive plume patterns resonantly excited by surface plasmon polaritons Chen Zhao-Quan, Yin Zhi-Xiang, Xia Guang-Qing, Hong Ling-Li, Hu Ye-Lin, Liu Ming-Hai, Hu Xi-Wei and A. A. Kudryavtsev

025204

Experimental and modeling researches of dust particles in the HL-2A tokamak Huang Zhi-Hui, Yan Long-Wen, Tomita Yukihiro, Feng Zhen, Cheng Jun, Hong Wen-Yu, Pan Yu-Dong, Yang Qing-Wei, Duan Xu-Ru and HL-2A Team

025205

Characterization of plasma current quench during disruption in EAST tokamak Chen Da-Long, Granetz Robert, Shen Biao, Yang Fei, Qian Jin-Ping and Xiao Bing-Jia CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES

026101

Quartic coupling and its effect on wetting behaviors in nematic liquid crystals Zeng Ming-Ying, Holger Merlitz and Wu Chen-Xu

026102

Dynamics of a ±1/2 defect pair in a confined geometry: A thin hybrid aligned nematic cell Lu Li-Xia and Zhang Zhi-Dong

026201

Effect of twin boundary on nanoimprint process of bicrystal Al thin film studied by molecular dynamics simulation Xie Yue-Hong, Xu Jian-Gang, Song Hai-Yang and Zhang Yun-Guang

026501

Effects of in-plane stiffness and charge transfer on thermal expansion of monolayer transition metal dichalcogenide Wang Zhan-Yu, Zhou Yan-Li, Wang Xue-Qing, Wang Fei, Sun Qiang, Guo Zheng-Xiao and Jia Yu (Continued on the Bookbinding Inside Back Cover)

026801

Coadsorption of gold with chlorine on CeO2 (111) surfaces: A first principles study Lu Zhan-Sheng, He Bing-Ling, Ma Dong-Wei and Yang Zong-Xian

026802

Effect of the thickness of InGaN interlayer on 𝑎-plane GaN epilayer Wang Jian-Xia, Wang Lian-Shan, Zhang Qian, Meng Xiang-Yue, Yang Shao-Yan, Zhao Gui-Juan, Li Hui-Jie, Wei Hong-Yuan and Wang Zhan-Guo CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES

027101

Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values Ma Xiao-Hua, Zhang Ya-Man, Wang Xin-Hua, Yuan Ting-Ting, Pang Lei, Chen Wei-Wei and Liu Xin-Yu

027201

Localization correction to the anomalous Hall effect in amorphous CoFeB thin films Ding Jin-Jun, Wu Shao-Bing, Yang Xiao-Fei and Zhu Tao

027301

Influence of interface within the composite barrier on the tunneling electroresistance of ferroelectric tunnel junctions with symmetric electrodes Wang Pin-Zhi, Zhu Su-Hua, Pan Tao and Wu Yin-Zhong

027302

Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation Zheng Xue-Feng, Fan Shuang, Chen Yong-He, Kang Di, Zhang Jian-Kun, Wang Chong, Mo Jiang-Hui, Li Liang, Ma Xiao-Hua, Zhang Jin-Cheng and Hao Yue

027303

Improved performance of AlGaN/GaN HEMT by N2 O plasma pre-treatment Mi Min-Han, Zhang Kai, Zhao Sheng-Lei, Wang Chong, Zhang Jin-Cheng, Ma Xiao-Hua and Hao Yue

027304

Morphology-controlled preparation of tungsten oxide nanostructures for gas-sensing application Qin Yu-Xiang, Liu Chang-Yu and Liu Yang

027305

Synthesis and electrical properties of In2 O3 (ZnO)m superlattice nanobelt Tang Xin-Yue, Gao Hong, Wu Li-Li, Wen Jing, Pan Si-Ming, Liu Xin and Zhang Xi-Tian

027401

Evolution of the 128-cm−1 Raman phonon mode with temperature in Ba(Fe1−𝑥 Co𝑥 )2 As2 (𝑥 = 0.065 and 0.2) Yang Yan-Xing, Gallais Yann, Fang Zhi-Hao, Shi Jing and Xiong Rui

027501

Quantum phase transition and Coulomb blockade effect in triangular quantum dots with interdot capacitive and tunnel couplings Xiong Yong-Chen, Wang Wei-Zhong, Yang Jun-Tao and Huang Hai-Ming

027502

Schwinger-boson approach to anisotropy ferrimagnetic chain with bond alternation Li Yin-Xiang and Chen Bin

027503

Room-temperature ferromagnetism with high magnetic moment in Cu-doped AlN single crystal whiskers Jiang Liang-Bao, Liu Yu, Zuo Si-Bin and Wang Wen-Jun

(Continued on the Bookbinding Inside Back Cover)

027504

Effects of growing conditions on the electric and magnetic properties of strained La2/3 Sr1/3 MnO3 thin films Lu Hai-Xia, Wang Jing, Shen Bao-Gen and Sun Ji-Rong

027505

Magnetization reversal process in Fe/Si (001) single-crystalline film investigated by planar Hall effect Ye Jun, He Wei, Hu Bo, Tang Jin, Zhang Yong-Sheng, Zhang Xiang-Qun, Chen Zi-Yu and Cheng Zhao-Hua

027801

Hole transporting material 5, 10, 15-tribenzyl-5H-diindolo[3, 2-a:30 , 20 -c]-carbazole for efficient optoelectronic applications as an active layer Zheng Yan-Qiong, William J. Potscavage Jr, Zhang Jian-Hua, Wei Bin and Huang Rong-Juan

027802

Elastic, dielectric, and piezoelectric characterization of 0.92Pb(Zn1/3 Nb2/3 )O3 –0.08PbTiO3 single crystal by Brillouin scattering Fang Shao-Xi, Tang Dong-Yun, Chen Zhao-Ming, Zhang Hua and Liu Yu-Long

027803

Synthesis and microwave absorption properties of graphene–oxide(GO)/polyaniline nanocomposite with Fe3 O4 particles Geng Xin, He Da-Wei, Wang Yong-Sheng, Zhao Wen, Zhou Yi-Kang and Li Shu-Lei

027804

High-frequency properties of oil-phase-synthesized ZnO nanoparticles Ding Hao-Feng, Yang Hai-Tao, Liu Li-Ping, Ren Xiao, Song Ning-Ning, Shen Jun, Zhang Xiang-Qun, Cheng Zhao-Hua and Zhao Guo-Ping

027901

Temperature effect on the electronic structure of Nb:SrTiO3 (100) surface Zhang Shuang-Hong, Wang Jia-Ou, Qian Hai-Jie, Wu Rui, Zhang Nian, Lei Tao, Liu Chen and Kurash Ibrahim INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY

028101

Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chemical vapor deposition Wang Jun, Hu Hai-Yang, Deng Can, He Yun-Rui, Wang Qi, Duan Xiao-Feng, Huang Yong-Qing and Ren

028102

Xiao-Min Influence of substrate bias voltage on the microstructure of nc-SiO𝑥 :H film Li Hui-Min, Yu Wei, Xu Yan-Mei, Ji Yun, Jiang Zhao-Yi, Wang Xin-Zhan, Li Xiao-Wei and Fu Guang-Sheng

028103

Effects of annealing temperature on shape transformation and optical properties of germanium quantum dots Alireza Samavati, Z. Othaman, S. K. Ghoshal and M. K. Mustafa

028104

Influence of colloidal particle transfer on the quality of self-assembling colloidal photonic crystal under confined condition Zhao Yong-Qiang, Li Juan, Liu Qiu-Yan, Dong Wen-Jun, Chen Ben-Yong and Li Chao-Rong

028501

Baseline optimization of SQUID gradiometer for magnetocardiography Li Hua, Zhang Shu-Lin, Qiu Yang, Zhang Yong-Sheng, Zhang Chao-Xiang, Kong Xiang-Yan and Xie XiaoMing

028502

One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation Zhang Jun, Guo Yu-Feng, Xu Yue, Lin Hong, Yang Hui, Hong Yang and Yao Jia-Fei (Continued on the Bookbinding Inside Back Cover)

028503

Nonlinear properties of the lattice network-based nonlinear CRLH transmission lines Wang Zheng-Bin, Wu Zhao-Zhi and Gao Chao

028504

Mapping an on-chip terahertz antenna by a scanning near-field probe and a fixed field-effect transistor L¨u Li, Sun Jian-Dong, Roger A. Lewis, Sun Yun-Fei, Wu Dong-Min, Cai Yong and Qin Hua

028505

Energy transfer ultraviolet photodetector with 8-hydroxyquinoline derivative-metal complexes as acceptors Wu Shuang-Hong, Li Wen-Lian, Chen Zhi, Li Shi-Bin, Wang Xiao-Hui and Wei Xiong-Bang

028701

Stretching instability of intrinsically curved semiflexible biopolymers: A lattice model approach Zhou Zi-Cong, Lin Fang-Ting and Chen Bo-Han

028702

Controlling cooperativity of a metastable open system coupled weakly to a noisy environment Victor I. Teslenko, Oleksiy L. Kapitanchuk and Zhao Yang

028703

Fast parallel algorithm for three-dimensional distance-driven model in iterative computed tomography reconstruction Chen Jian-Lin, Li Lei, Wang Lin-Yuan, Cai Ai-Long, Xi Xiao-Qi, Zhang Han-Ming, Li Jian-Xin, Yan Bin

028704

Multiple optical trapping based on high-order axially symmetric polarized beams Zhou Zhe-Hai and Zhu Lian-Qing GEOPHYSICS, ASTRONOMY, AND ASTROPHYSICS

029201

Changing characteristics and spatial differentiation of spring precipitation in Southwest China during 1961–2012 Liu Hong-Lan, Zhang Qiang, Zhang Jun-Guo, Hu Wen-Chao, Guo Jun-Qin and Wang Sheng