and more chemical engineers are working in the microelectronics and related industries. For ... A number of schools have started to incorporate microelectronic ...... and Ph.D. degree from the University of Florida, both in Chemical Engineering.
Session 1313
Integration of Microelectronics-Based Unit Operations into the ChE Curriculum Milo D. Koretsky, Chih-hung (Alex) Chang, Sho Kimura, Skip Rochefort and Cyndie Shaner Department of Chemical Engineering Oregon State University Corvallis, OR 97331-2702
Abstract Historically, chemical engineering has been focused on petrochemical and bulk chemical production. However, over the last 10-15 years, more chemical engineers and chemical engineering opportunities for new graduates have moved into the microelectronics industry. This is especially true in Oregon and at Oregon State University (OSU), where approximately 60% of the B.S. and M.S. graduates in the last five years have been employed in some sectors of the microelectronics and related industries. A number of schools have started to incorporate microelectronic processing into their curriculum. For the most part, this material tends to be presented in specialized, elective courses. However, when presented in the context of core chemical engineering courses, these unit operations can provide students with depth as well as breadth knowledge. The chemical engineering department at OSU is committed to developing strength in microelectronics processing within the context of the fundamental skills of the discipline. To this end, we are developing curricular and experimental modules from selected unit operations common in the microelectronics industry, and are integrating these into the classroom and the laboratory. Unit operations include: plasma etching, spin coating, chemical vapor deposition, electrodeposition and chemical mechanical planarization. The curricular modules are intended to reinforce core ChE fundamentals with examples from microelectronics processing. The lab modules provide students with hands-on learning in this area as well as more open-ended problem solving experiences. The incorporation of these microelectronics unit operations into core engineering science classes, into senior lab and into process design will be presented.
1. Introduction The semiconductor industry has grown rapidly in the last three decades. The chemical technologies have played a central role in this continuing evolution. Historically, chemical engineering has been focused on petrochemical and bulk chemical production. However, more and more chemical engineers are working in the microelectronics and related industries. For example, the most recent AIChE placement survey shows that from 1997 to 1998 the number of BS graduates placed in the electronics industry increased over 50% from 7.0% of BS graduates to 11.4%. The percentage of ChE graduates hired into this industry with advanced degrees is Proceedings of the 2003 American Society for Engineering Education Annual Conference & Exposition Copyright © 2003, American Society for Engineering Education
Session 1313 even larger1. Chemical engineers have the advantage of a solid background in chemical kinetics, reactor design, transport phenomena, thermodynamics and process control to undertake the challenges in microelectronics processing. Many chemical engineering pioneers in this field have recognized this ability2,3. A number of schools have started to incorporate microelectronic processing into their curriculum. For the most part, this material tends to be contained in survey courses that are descriptive. However, when presented in the context of core chemical engineering science, these unit operations can provide students with depth as well as breadth. An example of such an approach is the incorporation of thermal oxidation of silicon into the unit operations lab at Georgia Tech4. Additionally, development of education programs in this area has led to innovative and improved educational practices. A successful example is the curriculum developed by the chemical and materials engineering department at San Jose State University (SJSU). The essence of their project is to abandon the traditional laboratory cookbook instruction method and create a teamoriented and open-ended laboratory where students develop the same types of skills they will later use in industry. The content of their laboratory includes having students make a field effect transistor and perform open-ended experiments to improve this process5. While the approach at SJSU relies on the coordination between students in three different disciplines (EE/MatE/ChE), we are implementing the same type of learning environment solely within ChE at OSU. In this way, we can leverage off the fundamental research in microelectronics processing to develop unit operations accessible to undergraduate students based on their core engineering science background. The integration of unit operations in microelectronics has occurred in conjunction with a transformation in the Senior Unit Operations Laboratory that has begun during the 2000-2001 academic year. A newly created Endowed Chair, the Linus Pauling Engineer, was hired from industry to identify and incorporate the highest priority professional practices to senior lab. She serves as “project director” for this class to help new graduates become immediately prepared for industrial practice. Thus the unit operations lab provides students with the array of skills they will need to perform effectively in industry. The ChE Unit Operations Laboratory in Microelectronics Processing is targeted at undergraduate students who are interested in careers as process engineers in microelectronics and related industries. The students will both develop an in-depth understanding of the underlying physical and chemical principles in unit processes commonly used in microelectronics and related industries and also acquire the needed “soft skills” to be successful. 2 Microelectronics Unit Operations 2.1 Overview Hundreds of individual process steps are used in the manufacture of even simple microelectronics devices. However, the fabrication sequence uses many of the same unit processes numerous times. A list of unit operations that are common for the fabrication of microelectronics devices is given in Table 1. These unit operations rely on core chemical engineering science. The curricular material that is related to each topic is also illustrated in Table 1. Modules of the following unit operations will be developed for integration into the chemical engineering curriculum and unit operations laboratory at OSU.
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Session 1313 1. 2. 3. 4. 5.
Plasma Etching Chemical Vapor Deposition Spin Coating Electrochemical Deposition Chemical Mechanical Planarization
These unit operations contain complex systems that involve the interaction of many physical and chemical processes. Fortunately there have been extensive research efforts in these areas, and many of the fundamental mechanisms have been elucidated. For example, plasma etching processes have been modeled based on the fundamental transport and reaction processes occurring within the glow discharge to understand issues of etch rate, selectivity, uniformity and profile 6-9. Similarly chemical vapor deposition reactors have been modeled in analogy to porous catalysts, incorporating transport and reaction processes10-12. Control schemes have been based on these fundamental reactor models13. The fluid dynamics of spin coating of photoresist has been modeled and studied experimentally to predict coating thickness and uniformity as a function of spin-speed, fluid properties and spin duration14-17. Similarly, fluid dynamics based models of chemical mechanical planarization are being developed18-22. However, when these unit operations are covered at the university, they are usually taught in survey courses and approached descriptively and phenomenologically, rather than applying the fundamental engineering sciences depicted in Table 1. Table 1. Unit Operations in Microelectronic Device Fabrication Unit Operations Bulk Crystal Growth from Melt
Surface Reactions Cleaning Oxidation Etching Plasma Etching Wet Etching Thin Film Deposition Physical Vapor Deposition Chemical Vapor Deposition Electrochemical Deposition
Chemical Engineering Core Courses Fluid Dynamics Heat Transfer Mass Transfer Thermodynamics Reaction Engineering Process Control Kinetics Fluid Dynamics Mass Transfer Mass Transfer Kinetics Reaction Engineering Process Control Kinetics Fluid Dynamics Mass Transfer Heat Transfer Thermodynamics Electrochemical Engineering Reaction Engineering Process Control
Unit Operations Lithography Photoresist spin coating Photoresist baking Photoresist exposure and development
Chemical Engineering Core Courses Fluid Dynamics Mass Transfer Polymer Rheology Kinetics Process Control
Doping and Dopant Redistribution Ion implantation Thermal diffusion
Mass Transfer Heat Transfer Process Control
Planarization Chemical Mechanical
Fluid Dynamics Mass Transfer Electrochemical Engineering Process Control
Proceedings of the 2003 American Society for Engineering Education Annual Conference & Exposition Copyright © 2003, American Society for Engineering Education
Session 1313 2.2 Integration of microelectronics unit operations into the OSU ChE curriculum We are synthesizing the research results in the literature and applying them to the five unit operations discussed above to make them accessible to undergraduate chemical engineers while, at the same time, reinforcing the fundamental engineering science taught in the curriculum. To accomplish this objective, we are developing both lab based and class room based instruction. Integration into the lab occurs through the two required Unit Operations Laboratories (ChE 414 and 415) as well as a ChE elective, Thin Film Materials Processing (ChE 444). The first quarter of the two-quarter senior lab sequence (ChE 414) is highly structured and focuses on the students completing 3 unit operation experiments. We intend to have each student complete at least 1 microelectronics unit operation during this rotation. Due to unforeseen circumstances, the target for integration into ChE 414 has been postponed until W 2004. This second quarter of the senior lab course (ChE 415) builds on the work done in UO Lab 1. The focus is on working independently, developing a project proposal, completing experimental work and writing a final technical memorandum that includes recommendations for future work. The microelectronics unit operations are designed to be flexible enough so that each year, the group of students has a new, unique, and creative experience. The first four unit operations listed above were integrated into ChE 415 in S 2002. They will be described later in the paper. It is intended to provide lab in chemical mechanical planarization in S 2003. In addition students interested in pursuing high tech careers usually take Thin Film Materials Processing (ChE 444). In fact, this course is required for both the Microelectronics Processing and the Materials Science and Engineering options in the ChE department at OSU. Starting W 2003, ChE 444 has been expanded from 3 credits to 4 credits and now includes a lab. In the lab, students will be introduced to the unit operations listed above, albeit in a well-prescribed manner. Class room examples are being developed based on the labs at OSU as well as the research literature. Each of the four Unit Operations listed above will include at least two example exercises or homework problems to be integrated into a core chemical engineering science or design course. By integrating the technical content in this manner, the future process engineers in this industry will be able to draw upon core fundamentals as they go about problem solving. A grid of target courses for classroom integration is presented in Table 2. Those marked with an “X” represent targeted courses. For example, the design problem offered in Process Design II (ChE 432) in S 2002 is shown in Figure 1. In addition to reinforcing fundamental chemical engineering sciences through these selected microelectronic processing unit operations, we will also address several other ABET criteria. Our goal is that every student has mastered both the technical skills and professional practices necessary to be successful. Professional practices to be incorporated include effective oral and written communications, project planning, time management, interpersonal interaction, teamwork, and proactive behavior. This is an area of weakness in engineering education. The newly endowed Linus Pauling Engineer serves “project director” for all student teams. She coordinates the professional practices learning exercises, the physical facilities and the execution of team projects.
Proceedings of the 2003 American Society for Engineering Education Annual Conference & Exposition Copyright © 2003, American Society for Engineering Education
Session 1313 Table 2. Implementation grid of microelectronics unit operations and OSU ChE classes OSU ChE Course ChE 211 Materials Balances ChE 212 Energy Balances ChE 302 Chemical Process Statistics ChE 311 Thermodynamic Properties and Relationships ChE 312 Phase and Chemical Reaction Equilibrium ChE 323 Applied Momentum and Energy Transfer ChE 414 Chemical Engineering Laboratory ChE 415 Chemical Engineering Laboratory ChE 431 Chemical Plant Design ChE 432 Chemical Plant Design ChE 443 Chemical Reaction Engineering ChE 444 Thin Film Materials Processing ChE 445 Polymer Engineering and Science
Plasma Etching
Chemical Vapor Deposition X
Spin Electrochemical Coating Deposition
X X
Chemical Mechanical Polishing X
X X
X
X
X X X
X
X X
X X X
X
X X
X X
X X
X X
X
Reactor Design ChE 432 Detailed Design Project -LPCVD Silicon Nitride Spring, 2002 Introduction This project is designed for senior students in ChE 432, who are interested in experiencing a detailed design/simulation project in microelectronics processing. The topic selected is LPCVD (Low Pressure Chemical Vapor Deposition) that has been used for the deposition of silicon nitride on silicon wafers in the process for producing ICs. Requirements Students who work on this project are required to: (1) propose a design idea for a piece of equipment that handles 200 silicon wafers of 300mm in diameter, based on which (2) develop a model to simulate the performance of the equipment, and (3) determine proper operating conditions, i.e. temperature distributions, operating pressure, feed rates, and reaction time for controlling the deposit thickness at 1000 with variations across wafers and from wafer to wafer within ±3%. Figure 1. CVD Design problem assigned S 2002. Proceedings of the 2003 American Society for Engineering Education Annual Conference & Exposition Copyright © 2003, American Society for Engineering Education
Session 1313
2.3 Plasma Etching Glow discharge plasmas are used for a variety of surface manufacturing applications especially in integrated circuit manufacturing where up to 30% of all process steps involve plasmas in one way or another. A plasma barrel etcher has been incorporated into projects in the Unit Operations Laboratory (ChE 415) and Thin Film Materials Processing (ChE 444/544). This plasma barrel etcher unit and supporting systems were donated from Intel. In the barrel etcher, ion bombardment is suppressed since the substrate holder is contained within a Faraday cage. Thus, the etch rate depends on the concentrations of free radicals that react at the substrate surface. Uniform etching only occurs when mass transport to the surface is much greater than the inherent reaction rate. By measuring the etch as a function of radial position the relative importance of mass transfer to surface reaction can be backed out. The variation of etch rate as a function of the sample radius would allow students to interpret etch data in terms of fundamental chemical engineering principles. Industrially, obtaining uniform etching rate is also a central problem in plasma etching reactor design. Other examples of student lab experiments include the following: finding optimal process settings for etching polyphenylene oxide materials using SF6 and O2 feed gases using Design of Experiments (DOE) and analyzed using well-mixed reactor model; the effects of wafer spacing on etch rate; the effect of the number of substrates, i.e., loading, on etch rate; transient analysis of temperature effects on the etching rate. In Spring 2002, two groups of three students were given an assignment to develop a process which minimized interwafer as well as wafer to wafer variation in etch rate. This lab included several processes to pattern and then etch a wafer, including cleaning, spin coating, photolithography and plasma etching. Additionally students developed their own art-work to serve as a mask in photolithography. However, the experimental design focused on etching parameters while the other processes were unchanged. One group did a 2x2 design in which they varied pressure and wafer spacing while the other group varied power and spacing. Thickness measurements before and after etching were made using a profilometer. Both groups ably implemented statistics into the design and analysis of this project, using linear regression and ANOVA. On group even recognized the need for a gauge study to test the measurement precision of film thickness. They also learned about the difficulties of running a controlled experiment in a processing environment. One illustrative story tells of contaminated developer by another class using the lab ruining a run. The plasma reactor does not have temperature control. Thus the temperature rises as power is input during the etch process. This facet provided a good opportunity to use ChE analysis to understand the system. The student group was advised to record temperature during the process, but needed faculty help to develop an averaging method based on the Arrhenius expression for the activated process.
Proceedings of the 2003 American Society for Engineering Education Annual Conference & Exposition Copyright © 2003, American Society for Engineering Education
Session 1313
Plasma Glow
Reactor
Figure 2. Plasma barrel etcher and schematic
2.4 Chemical Vapor Deposition In this module, the gas-solid reaction kinetics are elucidated through real-time rate measurements using a modified thermogravimetric analyzer (TGA). Students can measure an increase in mass of silicon wafer sample specimen (about 10 mm by 20 mm) with time, resulting from the deposition of silicon nitride at different reactant concentrations and reaction temperatures at atmospheric pressure. Inert argon is mixed with the two gaseous reactants (ammonia and dichlorosilane). Since the reaction is at atmospheric pressure, as opposed to vacuum, students must account for the effect of resistance to diffusion through the gas film on silicon surface and find ways to eliminate the mass-transfer effects. In this context, they are asked to discuss the difference between the low pressure CVD and atmospheric pressure CVD. The kinetics obtained using the modified TGA will further be integrated into senior capstone design via designing a CVD reactor and simulating its performance for achieving uniform film thickness. Students will be challenged to develop a simple mathematical model that incorporates the fluid-flow, diffusion, and reaction that take place simultaneously. Students will use the model to predict the growth of silicon nitride films on two hundred 300mm diameter wafers varying with temperature-profile settings, reactant feed rates, operating pressures.
Proceedings of the 2003 American Society for Engineering Education Annual Conference & Exposition Copyright © 2003, American Society for Engineering Education
Session 1313
Figure 3. Silicon nitride CVD reactor and schematic
In Spring 2002, a group of three students were given the assignment to establish a kinetic expression for the atmospheric pressure silicon nitride CVD reactor. Their expectations over a four-week period given for collecting data, in addition to professional practices described later, included: 1. To design an experiment to cover three temperatures in a range from 600°C to 800°C and concentrations of dichlorosilane < 0.10 mole% and ammonia < 0.30 mole% 2. To estimate the magnitude of mass transfer resistance and compare it to the deposition rate 3. To analyze and interpret data 4. To represent the silicon nitride deposition rate in terms of dichlorosilane and ammonia concentrations as well as temperature 5. To discuss possible mechanism for the atmospheric pressure silicon nitride CVD and differences from LPCVD The students changed the concentration of ammonia and maintained that of dichlorosilane constant because of time constraints. On the other hand, they did collect data at three different temperatures. However, the data collected at the highest temperature they selected showed different tendencies from the data collected at the other two lower temperatures. Therefore, they did not try to establish any consistent temperature dependency of deposition rate and instead explored why their data at the highest temperature were different. Also, their data showed roughly a 1/3-order dependency on the ammonia concentration. They needed assistance from the instructor to interpret this tendency in terms of a Langmuir-Hinshelwood rate expression. They also estimated the mass transfer rate under their experimental conditions and compared its magnitude to the deposition rate to conclude that their data were free from the mass transfer Proceedings of the 2003 American Society for Engineering Education Annual Conference & Exposition Copyright © 2003, American Society for Engineering Education
Session 1313 resistance. However, they needed assistance from the instructor to understand the theoretical background for the mass transfer mechanism on a flat plate of silicon wafer in terms of the boundary-layer theory. 2.5 Spin Coating Spin coating has come into widespread use in the microelectronics industry for coating the photoresists used to define patterns in the films on a silicon wafer. It will also be used in future technologies as polymers become incorporated as dielectrics materials. The underlying principles of spin coating (fluid flow, fluid properties, surface phenomena) and the process itself make it a natural for inclusion in the chemical engineering curriculum. The precursor to coating, surface wetting and adhesion, is also a classical problem. The spin coating of solid substrates with viscous liquids and surface wetting phenomena (surface tension, contact angle, viscosity) is done using a “state-of-the-art” programmable laboratory spin coater from Specialty Coating Systems (SCS Model P6700) and highly polished and oxide coated 6” silicon wafers. Examples of engineering projects include: experiments on viscous, Newtonian liquids to test the Emslie model; comparing data to published spin coating results for Newtonian liquids14; and coating photoresist on silicon wafers as the first step in the photolithography process. In S 2002, this experiment was used in support of the Plasma etching studies.
from “Boundary Layer Theory” H. Schlichting and K. Gersten 8th Ed. Springer, 2000.
Figure 4. Spin coater and flow schematic
2.6 Electrochemical Deposition The electrochemical deposition system includes a computer-controlled bipotentiostat, PineChem software, rotator, electrodes, and a standard voltammetry cell. A variety of experiments could be designed using this system. Examples of such experiments are: diffusion coefficient Proceedings of the 2003 American Society for Engineering Education Annual Conference & Exposition Copyright © 2003, American Society for Engineering Education
Session 1313 determination by rotating electrode cyclic voltammetry; measurement of the kinetics and the flux of copper ions to an electrode surface by means of rotating ring-disk electrode; study of mass transfer using rotating electrodes; the effects of additives on deposition rates; leveling effects of additives; superfilling phenomena, and resistive seed effect etc.
Figure 5. Copper electrodeposition reactor and schematic
In Spring 2002, the student team was taught how to use this system by going through a “cookbook” experiment using cyclic voltammetry and the rotated disk electrode to characterize the redox reaction of potassium ferricyanide solution. After the training, they were asked to propose an experimental plan using this setup. They decided to study the copper mass transport using different copper electrolyte (CuCl2 and CuSO4) and the influence of sulfur containing additive (thiourea). The experiments were performed using acid copper solutions prepared from CuCl2 and CuSO4 with and without thiourea. The electrochemical reactions were characterized by sweeping the voltage and measured the current. The boundary layer thickness was controlled by the rotating speed of the working electrode and the Levich equation was used to determine the
Proceedings of the 2003 American Society for Engineering Education Annual Conference & Exposition Copyright © 2003, American Society for Engineering Education
Session 1313 diffusivity. Currently, we are considering building an industrial type fountain-plating cell to complement this setup. The students got more and more enthusiastic about the project. This is largely attributed to: 1. their creative ownership of this project on their own and 2. the discovery. One difficulty in running the lab is how to implement the “cooking without recipe” spirit without losing the technical content. Technically, they learned the basic principle and terminology about copper electrodepostion from doing the lab and a literature review. The lab also provided an opportunity to apply what they have learned in the ChE core courses including: boundary layer theory, mass transport, and surface limited vs. reaction limited reaction. The question and answer section in the oral presentation has challenged the students to think more deeply and independently. 2.7 Chemical Mechanical Planarization The experimental set up of a bench scale CMP module is shown in Figure 6. The experimental set up is adopted from the research literature23, which has been shown as a useful tool for understanding of the reaction mechanisms during CMP. In this set up, the copper CMP will be studied in a three-electrode electrochemical cell by using a copper-plated rotating disk electrode. The polishing downward force will be measured by a balance, which supports the entire electrochemical cell. The DC electrochemical measurement will be carried out by using a potentiostat. A variety of experiments can be designed to study the Cu CMP process. For example, the effect of HNO3 or NH4OH on the chemical etching mechanism, the effects of additives (e.g. inhibitor, oxidizer), the relation between downforce and removal rates through the Preston equation. The Preston equation relates removal rate to driving force in the same way that mass transfer coefficients relate mass transfer to driving force. Studies on the bench scale system will be scaled up to the industrial scale system shown in Figure 7.
Computer Controlled Potentiostat Rotating Disk Electrode ( Working Electrode)
Reference Electrode
Counter Electrode
Polishing Pad
Weighting Balance
Figure 6. Bench scale CMP reactor and schematic
Proceedings of the 2003 American Society for Engineering Education Annual Conference & Exposition Copyright © 2003, American Society for Engineering Education
Session 1313
Figure 7. Industrial scale CMP reactor
3. Professional Practices The Linus Pauling Engineer position was established November 2000 with the primary objective to incorporate professional practices into the Chemical Engineering curriculum so that graduates are immediately ready for professional practice. The initial focus of the new position was the Senior Unit Operations Laboratory course sequence taught during the winter and spring quarters of the school year. Opportunities for integrating the content throughout the curriculum are now being identified. For the first year two individuals with extensive industry experience were responsible for the course and its design. Building on the strong technical content of prior years, the team identified key professional practices that needed to be taught and developed modules and assignments so that the students could learn and practice these professional practices during the laboratory sequence. Professional practices are incorporated into the Senior Unit Operations Laboratory through lectures, class work assignments and homework assignments. Eight lectures cover project management, meeting skills, technical writing, oral presentations, safety, rational management processes (situational, problem, decision and potential problem analysis), personality selfassessment and conflict resolution. All students complete writing assignments and oral presentations to practice the professional skill as well as demonstrate technical understanding of the unit operation. The instructor, the student and the student’s peers assess each student’s work process skills, safety performance and team behaviors. The following professional practices have been incorporated into the Senior Unit Operations Laboratory. The key mode for delivering the course material to the students is instruction with experiential learning. 1.
Writing a. Formal technical reports following the technical journal format (One individual and two team reports) b. Safety report for supervisor and peers (One individual) c. Operations Manual for a non-technical audience (One individual)
Proceedings of the 2003 American Society for Engineering Education Annual Conference & Exposition Copyright © 2003, American Society for Engineering Education
Session 1313 d. Weekly Status Reports for supervisor (Two individual) e. Project Proposal for management team (One team) f. Technical Memorandum for supervisor (One team) 2.
Oral Presentations a. Formal 30-minute presentation using MS PowerPoint with a computer and computer projector followed by questions from faculty subject “experts” and peers. b. Informal presentations including impromptu report outs from team exercises and leading team meetings using formal meeting processes.
3.
Project Management a. Introduction: each student prepares a list of deliverables and detailed task list for one unit operation experiment during the first quarter of the sequence. They prepare a Gantt chart using MS Project to document their plan. b. Application: each student team prepares a project plan in the Gantt chart format using MS Project for the entire second quarter covering the three phases of the project: Project Proposal, Experimentation, and Final Report and Recommendations.
4.
Formalized Meeting Processes a. The instructor role models the use of a formal meeting process including: Desired Outcomes, Agenda and Audit for all lecture periods. b. The student teams must prepare Desired Outcomes, an Agenda and do an Audit for all lab sessions. The instructor reviews these and participates in all audits. Focus is effective time utilization and looking for ways to improve.
5.
Rational Thinking Processes a. The instructors developed this module based on the work by Kepner and Tregoe in their book, The New Rational Manager24. The processes include problem analysis, decision analysis, potential problem analysis and situational analysis. b. The module includes a lecture on each of the four processes including an example of how to use the process. The students are given a homework assignment on a case study for each process. They are expected to use the specific process for the case study to complete the homework assignment. c. They are encouraged to use the processes in their laboratory work; for example, they must prepare a potential problem analysis as part of the Project Proposal for the second quarter of the series.
6.
Team and Personal Effectiveness a. During the first quarter of the series, the three person teams rotate through three jobs. These jobs are team leader, safety coordinator and operations coordinator. Each job has specific responsibilities. They learn the value of dividing the work to more effectively use their time.
Proceedings of the 2003 American Society for Engineering Education Annual Conference & Exposition Copyright © 2003, American Society for Engineering Education
Session 1313 b. The Myers-Briggs self-assessment tool is given and a lecture is delivered talking about personality types, their preferences and how it impacts team behaviors. A theme of valuing diversity is maintained throughout the course sequence. c. The instructor developed a module on Conflict Resolution based on the ThomasKilman Conflict Mode self-assessment tool and a workshop module developed by Consulting Psychologists Press, Inc. The students complete their self-assessment and then a series of 4 lectures including role-playing are used to teach the students about the skills, correct use, impact of overuse and impact of under use of the 5 modes. d. Each student completes a peer review of his or her teammates during each of the quarters. This along with the instructor review of individual and team performance is a significant part of the students’ final grade (10% first quarter and 20% second quarter). 7.
Safety Practices The instructors developed a module teaching the students the seven elements of a safety plan. These include hazardous materials, facilities, safe behaviors, emergency response, training, auditing, and record keeping. The safety coordinator is responsible for preparing a safety plan specific to the experiment based on these seven elements. They must train their teammates, audit their behaviors and keeps records of the training and audits. All safety activity is documented in a written safety reporta.
8.
Concepts of Continuous Improvement The concept of continuous improvement is integrated in all aspects of the course concept through the use of audits. The audit reviews whether desired outcomes were achieved and then reviews “the process”. The audit looks for what went well and should be used in the future and what didn’t go well and needs improvement. Concrete suggestions on how to improve it are encouraged. These audits are done on lectures, student lab sessions and at the end of each quarter. Student feedback is valued and incorporated whenever possible to continuously improve the course.
4. Outreach The newly developed modules in the microelectronics processing area were implemented in the outreach programs which are currently in place in the ChE department: (1) Summer Experience in Science and Engineering for Youth (SESEY), and (2) Saturday Academy and Apprenticeships in Science and Engineering (ASE) Program. Each of these programs has a somewhat different focus, but share several common underlying themes: exposure of high school students to careers in science and engineering, through research experiences and other opportunities which are typically not available to them in the high schools; recruitment and retention of underrepresented groups (girls and ethnic minorities) into science and engineering; and, a goal of increasing the technological literacy of high school students so that they can be empowered to make educated career choices. a
Safety analysis tools, such as HAZOP, are also covered in Process Design II (ChE 432). Students must analyze their project using at least two methods and include the results of safety analysis in their report. Proceedings of the 2003 American Society for Engineering Education Annual Conference & Exposition Copyright © 2003, American Society for Engineering Education
Session 1313
The Summer Experience in Science and Engineering for Youth (SESEY): program was initiated in the summer of 1997 and receives funding from several sources. The primary focus group has been traditionally underrepresented students (females and ethnic minorities) in high school who have an interest in math and science. The students (approximately 25 per year) are brought to the Oregon State University campus for a one-week summer camp where they are paired with a faculty mentor in engineering for a mini-research project. The modules on plasma etching and spin coating has been used twice as mini-research projects. Copper electrodeposition has been used once. We are in the process of adding new experimental modules to be included in future years, providing high school students with a clear view of the applications of chemical engineering to microelectronics, one of Oregon’s most important industries. SESEY web site: http://www.che.orst.edu/SESEY/ Saturday Academy programs are pre-college, community-based education activities providing extracurricular enriched learning experiences through community professionals. The Apprenticeships in Science and Engineering (ASE) program is part of Saturday Academy and is targeted at the “best and brightest” high school students. The heart of the ASE program is the apprenticeship, in which a student apprentice works with one or more technical professional mentors for eight weeks full-time during the summer. The OSU ChE Dept. has participated in the ASE program since 1994. Integration of the microelectronics modules into these summer research experiences is an excellent avenue for both recruitment of top rated students into engineering and exposure of students to technologies relevant to Oregon’s predominant industry. Web site: http://www.ogi.edu/satacad/index.html 5. Assessment Plan The measurable student outcomes for each unit operations will include the followings: 1. The students will demonstrate communication skills. For example, they will be required to master written and oral reports. 2. The students will demonstrate technical synthesis in each of the unit operations. For example, in CVD, they will use kinetic data in reactor design problems. 3. The students will demonstrate professional practices. For example, they will be required to demonstrate project planning before performing experiments. Each of these outcomes will be assessed by three methods: 1. Student self-assessment and *peer-assessment*, e.g. survey of effectiveness of educational materials. 2. Evaluation of student performance by instructors. 3. Feedback from industrial constituency, e.g. survey of student performance from industrial employer. 6. Summary The integration of microelectronics-based unit operations into the ChE curriculum at OSU has been presented. To accomplish this objective, we are developing both lab based and classroom based instruction. Five new unit operations are being implemented in senior lab, including: plasma etching, chemical vapor deposition, spin coating, electrochemical deposition, and chemical mechanical planarization. These labs are also included in an elective, Thin Film Proceedings of the 2003 American Society for Engineering Education Annual Conference & Exposition Copyright © 2003, American Society for Engineering Education
Session 1313 Materials Processing. Class room examples are being integrated into ChE core engineering science classes. By integrating the technical content in this manner, the future process engineers in this industry will be able to draw upon core fundamentals as they go about problem solving. They will also provide breadth to the other students in the class. Simultaneously, the students are learning professional practices including effective oral and written communications, project planning, time management, interpersonal interaction, teamwork, and proactive behavior. These modules are also being used effectively in the SESEY and ASE outreach programs. 7. Acknowledgements The authors are grateful for support provided by the Intel Faculty Fellowship Program and the National Science Foundation’s Course, Curriculum and Laboratory Improvement Program under grant DUE-0127175. We also acknowledge the Dreyfus Special Grants Program (SG-97-075), OSU precollege programs, Kelley Foundation, Bridges Foundation and NSF (add-on) for their support of the SESEY program and Pete Johnson for the endowment for the Linus Pauling Engineer. SEH America graciously donated the highly polished and oxide coated 6” silicon wafers. Helpful discussions with Emily Allen of San Jose State University and Chuck Croy of Intel Corporation are greatly appreciated. 8. References [1] “Initial Placement of Chemical Engineering Graduates,” http://www.aiche.org/careerservices/trends/placement.htm [2] Microelectronics Processing: Chemical Engineering Aspects, Advanced in Chemistry series, Vol. 221, D.W. Hess and K.F. Jensen eds., American Chemical Society, Washington, DC 1989. [3] Process Engineering Analysis in Semiconductor Device Fabrication, S. Middleman, McGraw-Hill, New York, NY 1993. [4] “Thermal Oxidation of Silicon: a Unit Operation for ChEs,” D. W. Hess, S. Bidstrup-Allen, P. Kohl, M. Allen and G. May, presented at Session 19, ASEE Summer School for Chemical Engineering Faculty, Snowbird, UT (1997). [5] “Interdisciplinary Teaching and Learning in a Semiconductor Processing Course,” A.J.Muscat, E.L. Allen, E.D.H. Green and L.S. Vanasupa, Journal of Engineering Education 87, 413 (1998). [6] “Fundamentals of Plasma Chemistry,” A.T. Bell, in Techniques and Applications of Plasma Chemistry, A.T. Bell and J.R. Hollahan, Eds., John Wiley & Sons, New York, NY 1974. [7] “A Continuum Model of DC and rf Discharges,” D. Graves and K.F. Jensen , IEEE Trans. Plasma Sci. P5-14, 78 (1986). [8] “Transient Behavior during Film Removal in Diffusion-Controlled Plasma Etching,” R.C. Alkire and D.J. Economou, J. Electrochem. Soc. 132, 648 (1985). [9] “A Model of the Chemical Processes Occurring in CF4/O2 Discharges used in Plasma Etching,” I.C. Plumb and K.R. Ryan, Plasma chem. Plasma proc. 6, 231 (1986). [10] “Modeling and Analysis of Low Pressure CVD Reactors,” K.F. Jensen and D.B. Graves, J. Electrochem. Soc., 130 1950 (1983). [11] “Low Pressure CVD of Silicon Nitride,” K.F. Roenigk and K.F Jensen, J. Electrochem. Soc., 134(7), 17771785(1987). [12] Elements of Chemical Reaction Engineering, H. Scott Fogler, 3rd Ed., Prentice-Hall PTR 1999. p. 789-795. [13] Automatic Control in Microelectronics Manufacturing:˚ Practices, Challenges, and Possibilities. T.F. Edgar, S. Butler, W.J. Campbell, C. Pfeiffer, C. Bode, S.B. Hwang, K.S. Balakrishnan and J. Hahn.˚˚Automatica˚36, 1567 (2000). [14] “Flow of a Viscous Fluid on a Rotating Disc,” A.G. Emslie, F.T. Bonner and L.G. Peck, Journal of Appl. Phys. 29, 858 (1958). [15] “A Mathematical Model for Spin Coating of Polymer Photoresists,” W.W. Flack, D.S. Soong, A.T. Bell and D.W. Hess, Journal of Appl. Phys. 56, 1199 (1984).
Proceedings of the 2003 American Society for Engineering Education Annual Conference & Exposition Copyright © 2003, American Society for Engineering Education
Session 1313 [16] “Spin Coating: One-Dimensional Model,” D.L. Bornside, C.W. Macosko, and L.E. Scriven, Journal of Appl. Phys. 66, 5185 (1989). [17] “Lubricant Retention on a Spinning Disk,” L. Strong and S. Middleman AIChE J. 35 (10), 1753 (1989). [18] “Some Transport Phenomena Issues in Chemical Mechanical Polishing” R. S. Subramanian and L. Zhang, 3rd Annual Workshop on Chemical Mechanical Polishing (1998). [19] “Tribology Analysis of Chemical Mechanical Polishing” S. R. Runnels and L. M. Eyman, J. Electrochem. Soc. 141, 1698 (1994). [20] “Investigation of the Kinetics of Tungsten Chemical Mechanical Polishing in Iodate Based Slurries” D. J. Stein, D. L. Hetherington, and J. L. Cecchi, J. Electrochem. Soc. 146, 376 (1999). [21] “Chemical Mechanical Polishhing Mechanisms of Low Dielectric Constant Polymers in Copper Slurries,” C.l. Borst, D.G. Thakurta, W.N. Gill, and R.J. Gutmann, J. Electrochem. Soc. 146, 4309 (1999). [22] Chemical Mechanical Planarization of Microelectronic Materials, J. M. Steigerwald, S. P. Murarke, R. J. Gutman, John Wiley & Sons, New York, NY 1997. [23] “Electrochemical Effects of Various Slurries on the Chemical Mechanical Polishing of Copper-Plated Films”, Tzu-Hsuan Tsai and Shi-Chern Yen, Submitted to J. Electrochem. Soc. [24] Kepner, Charles H. and Benjamin B. Tregoe, The New Rational Manager, Princeton Research Press, 1981. Milo D. Koretsky is an Associate Professor of Chemical Engineering at OSU. He received his BS and MS degrees from UCSD and Ph D from UC Berkeley, all in chemical engineering. Professor Koretsky’s research interests are in thin film materials processing including: plasma etching, chemical vapor deposition, electrochemical processes and chemical process statistics. His book, Engineering and Chemical Thermodynamics, is due out in December 2003. Chih-hung (Alex) Chang is an Assistant Professor of Chemical Engineering at OSU. He received his BS degree from National Taiwan University and Ph.D. degree from the University of Florida, both in Chemical Engineering. Professor Chang’s research interests include phase equilibria, photovoltaics, X-ray absorption fine structure, electronic materials, nano- and microtechnology. Sho Kimura is a Professor of Chemical Engineering at OSU. Professor Kimura’s research interests cover hightemperature materials synthesis, nano-sized materials synthesis, surface modifications, applications of hightemperature fluidization technology, reaction kinetics, catalytic effects on gas-solid reactions, and reactor design and simulations. Skip Rochefort is an Associate Professor of Chemical Engineering at OSU. He received his BS degree form UMass, his MS degree from Northwestern and Ph D from UCSD, all in chemical engineering. Professor Rochefort has been recognized for his teaching and advising activities by ASEE, AIChE, and the OSU College of Engineering. His research interests are in all areas of polymer engineering and science, and engineering education. Cyndie Shaner served as the Linus Pauling Distinguished Engineer at OSU from 2000 to 2002. She received her BS degree form Northwestern University in chemical engineering. Ms. Shaner has 22 years industrial experience with Chevron.
Proceedings of the 2003 American Society for Engineering Education Annual Conference & Exposition Copyright © 2003, American Society for Engineering Education
