R.C. Jaeger and T.N. Blalock, Microelectronic Circuit Design, 3 rd. Edition,
McGraw-Hill, 2006. There are numerous other books on the subject which may
be.
sensor solutions utilizing both analog and digital principles. The sensors will
utilize Graphene-based thin films integrated directly into the structure. For an ...
He knows my name. E F#m. E/G# A. E. B. I have a maker he formed my heart.
E F#m. E/G#. A. E. B. E. Before even time began my life was in his hands. E F
# ...
Ideal Op Amp Circuits. The operational amplifier, or op amp as it is commonly
called, is a fundamental active element of analog circuit design. It is most ...
Thus, in the classical limit, classical and quantum mechanics predict the same ... •
Quantum mechanics involves physics but also has philosophical and even ...
Digital communications is the exchange of information using a finite set of signal
waveforms. This is in contrast to analog communication (e.g., AM/FM radio).
challenges in MIMO-OFDM system design, including physical channel ... Finally,
the paper considers a software radio implementation of MIMO-OFDM.
Aug 22, 1997... Space: names are defined in an inverted tree structure. Read names from node
up to root of tree. Source: TCP/IP Protocol Suite by Forouzan ...
Feb 3, 2014 ... 3.2 Hydrogen Atom. 2. 2. 2. 1 m d d. = Φ. Φ. -. ϕ. In section 3.1, we solved the two
differential equations below where Eq. 3.2.1 is dependent on ...
Diode Circuits: Graphical Solution ... c) The current across the diode is zero for
reverse bias. V ... analysis of circuits containing active devices (like diodes,.
ECE 3040 - Dr. Alan Doolittle. Georgia Tech. What Makes up an Op Amp? The “
741” Example. Current Mirror Used as an Active Load. 2. 1. 2. 4. 1. 3. 2. C. C. EE.
P-n Junction I-V Characteristics. Electron Diffusion. Current. Electron Drift.
Current. Hole Diffusion. Current. Hole Drift. Current. In Equilibrium, the Total
current ...
Our First Device: p-n Junction Diode. N-type material ... A p-n junction diode is
made by forming a p-type region of ..... P-n Junction I-V Characteristics. Electron ...
(Reference [6]). A 10-Gb/s CMOS CLOCK AND DATA RECOVERY CIRCUIT
WITH .... Monolithic Phase-Locked Loops and Clock Recovery Circuits, IEEE.
Press ...
Design of Two Stage CMOS Op Amp. • Summary. Lecture 160 – MOSFET Op
Amp Design (1/30/04). Page 160-2. ECE 6412 - Analog Integrated Circuit Design
- ...
ECE 6450 - Dr. Alan Doolittle. Georgia Tech. Lecture 13 and 14. Thin Film
Deposition and Epitaxy (Chemical Vapor. Deposition, Metal Organic CVD and ...
realizing the root locations of the filter with cascaded first- and second-order ... is
based on replacing components of a passive RLC ladder filter with first-order.
Analog Integrated Circuit Design: Why? 1. Abstract: What is analog? Everything
we see, hear, and perceive in life is analog, from voice, music, and seismic ...
Welcome to the digital hardware design laboratory. This book is a ... The
laboratory assumes an in-lab setup of a computer-based digital simulation
package, an.
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED
CIRCUITS AND SYSTEMS, VOL. CAD-l, NO. 1, JANUARY 1982 25. Efficient ...
Typical BiCMOS Technology The following pages describe a 0.5µm BiCMOS process. Masking Sequence: 13. PMOS lightly doped drain 1. Buried n+ layer 14. n+ source/drain 2. Buried p+ layer 3. Collector tub 15. p+ source/drain 4. Active area 16. Silicide protection 5. Collector sinker 17. Contacts 6. n-well 18. Metal 1 7. p-well 19. Via 1 8. Emitter window 20. Metal 2 9. Base oxide/implant 21. Via 2 10. Emitter implant 22. Metal 3 11. Poly 1 23. Nitride passivation 12. NMOS lightly doped drain Notation: BSPG = Boron and Phosphorus doped Silicate Glass (oxide) Kooi Nitride = A thin layer of silicon nitride on the silicon surface as a result of the reaction of silicon with the HN3 generated, during the field oxidation. TEOS = Tetro-Ethyl-Ortho-Silicate. A chemical compound used to deposit conformal oxide films. ECE 4430 - Analog Integrated Circuits and Systems
Comment: • As the epi layer grows vertically, it assumes the doping level of the substrate beneath it. • In addition, the high temperature of the epitaxial process causes the buried layers to diffuse upward and downward. ECE 4430 - Analog Integrated Circuits and Systems
Comment: • The silicon nitride is use to impede the growth of the thick oxide which allows contact to the substrate • α-silicon is used for stress relief and to minimize the bird’s beak encroachment ECE 4430 - Analog Integrated Circuits and Systems
Comments: • The surface of the region where the MOSFETs are to be built is cleared and a thin gate oxide is deposited with a polysilicon layer on top of the thin oxide • The polysilicon is removed over the source and drain areas • A light source/drain diffusion is done for the NMOS and PMOS (separately)
Comments: • Siliciding is used to reduce the resistance of the polysilicon and to provide ohmic contacts to the base, emitter, collector, sources and drains
Comments: • A dielectric is deposited over the entire wafer • One of the purposes of the dielectric is to smooth out the surface • Tungsten plugs are used to make electrical contact between the transistors and metal1
SUMMARY • This section has illustrated the major process steps for a 0.5micron BiCMOS technology. • The performance of the active devices are: npn bipolar junction transistor: βF = 100-140 BVCEO = 7V fT = 12GHz, n-channel FET: K’ = 127µA/V2 VT = 0.64V λN ≈ 0.060 p-channel FET: VT = -0.63V λP ≈ 0.072 K’ = 34µA/V2 • Although today’s state of the art is 0.25µm or 0.18µm BiCMOS, the processing steps illustrated above approximate that which is done in a smaller geometry.
