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Sep 23, 2010 - By Xinran Zhang , Steven D. Hudson , * Dean M. DeLongchamp , * David J. Gundlach ,. Martin Heeney , and Iain McCulloch. 1. Introduction.
March 2011 , Volume 3, Issue 1, pp 51â55 ... A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva and A. A. Firsov, Science 306, 666 ...
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Feb 15, 2011 - 2011, 21, 1187â1193. Hyun-Kyu Park , Keun Young Lee , Ju-Seok Seo , Jin-A Jeong , Han-Ki Kim , Dukhyun Choi , * and Sang-Woo Kim *. 1.
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Apr 22, 2014 - compounds [ 14â25 ] have been studied as NIB cathode mate- ... Na 3(VO 1âxPO 4) 2F 1+2 x (0 ⤠x ⤠1) compounds as a new family of high-per- .... (bâe) Bright-field TEM images (left) and the corresponding SAED patterns ...
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Dec 12, 2010 - Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a 'solâgel on chip' process. K. K. Banger1 ...
LETTERS PUBLISHED ONLINE: 12 DECEMBER 2010 | DOI: 10.1038/NMAT2914
Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process K. K. Banger1 , Y. Yamashita2 , K. Mori3 , R. L. Peterson1† , T. Leedham4 , J. Rickard1 and H. Sirringhaus1 * At present there is no ‘ideal’ thin-film transistor technology for demanding display applications, such as organic light-emitting diode displays, that allows combining the low-temperature, solution-processability offered by organic semiconductors with the high level of performance achievable with microcrystalline silicon1 . N-type amorphous mixed metal oxide semiconductors, such as ternary oxides Mx 1 My 2 Oz , where M1 and M2 are metals such as In, Ga, Sn, or Zn, have recently gained momentum because of their high carrier mobility and stability2,3 and good optical transparency, but they are mostly deposited by sputtering. So far no route is available for forming highperformance mixed oxide materials from solution at low process temperatures
