Photonic-crystal microcavity laser with sitecontrolled quantum-wire active medium Kirill A. Atlasov1*, Milan Calic, Karl Fredrik Karlsson1,2, Pascal Gallo, Alok Rudra1, Benjamin Dwir1 and Eli Kapon1 1
Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratory of Physics of Nanostructures, CH-1015 Lausanne, Switzerland 2 Permanent Address: IFM, Semiconductor Materials, Linköpings Universitet, SE-581 83 Linköping, Sweden *
[email protected]
Abstract: Site-controlled quantum-wire photonic-crystal microcavity laser is experimentally demonstrated using optical pumping. The single-mode lasing and threshold are established based on the transient laser response, linewidth narrowing, and the details of the non-linear power input-output charateristics. Average-power threshold as low as ~240 nW (absorbed power) and spontaneous emission coupling coefficient β~0.3 are derived. ©2009 Optical Society of America OCIS codes: (140.5960) Semiconductor lasers; (140.3945) Microcavities; (230.5298) Photonic crystals; (230.5590) Quantum-well, -wire and -dot devices
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(C) 2009 OSA
Received 29 Jul 2009; revised 10 Sep 2009; accepted 17 Sep 2009; published 24 Sep 2009
28 September 2009 / Vol. 17, No. 20 / OPTICS EXPRESS 18178
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1. Introduction Microcavity semiconductor lasers employing high spontaneous emission coupling exhibit interesting and potentially useful peculiarities such as “thresholdless” operation [1,2]. In particular, microlasers utilizing high Q-factor cavities of very-small mode volumes allow for exploiting cavity quantum-electrodynamics (QED) effects that can improve greatly the laser performance [3] yielding devices with very low (
