QuickCap NX Datasheet - Synopsys

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CS2353. Figure 3: QuickCap NX provides precise physical models of process effects. Proven Parasitic Capacitance. Extraction. QuickCap NX has demonstrated ...
Datasheet

QuickCap NX 3D Field Solver

Overview QuickCap NX is the gold standard 3D Field Solver solution for advanced 14nm FinFET and beyond process technologies. `` Field solver solution for early process

technology node exploration and parasitic modeling development `` Advanced random-walk algorithm offers self-capacitance, coupling capacitance and distributed capacitance extraction for test structures and critical nets `` Supports detailed process modeling of complex geometries and process effects for accurate analysis of device and interconnect parasitics at 14nm and below `` Used by Foundries for high-accuracy 3D FinFET modeling using uniquely detailed silicon profiles `` 3D graphical viewer allows visibility into the exact process profile being modeled `` Faster runtime enabled by multicore processing, tiling, bounded nets and hierarchical extraction for increased designer productivity

QuickCap NX is a high-accuracy 3D parasitic field solver for foundry process technology development and circuit analysis. QuickCap NX includes key capabilities that address critical design challenges that occur in 14-nm process technologies and below. QuickCap NX is also used by foundries for modeling complex FinFET middle-of-line (MEOL) parasitic effects at 14-nm and below. With its advanced process modeling features, a parallel execution mode and reference-level SPICE netlist generation and reduction capabilities, users can shorten the development cycle by more accurately predicting silicon performance.

Tech File Tech File

QuickCap NX

SPEF

Figure 1: QuickCap NX 3D field solver solution enables early process exploration and characterization

As geometries shrink and clock

FinFET modeling at 14-nm

frequencies increase, designers need

Several changes are introduced by

Powerful Geometry Processing Engine

more accurate parasitic values to reduce

FinFET transistor architecture at 14nm

The geometry pre-processor capability

risk of design failure. The growing need

and below. FinFETs are able to achieve

“gds2cap” translates the 2D layout data

for more accuracy makes it necessary to

better control over the source-drain

into a 3D representation and reduced

account for precise fringing electrostatic

channel because the gate encloses

SPICE netlist with resistance and

fields and process effects in test

the channel on three sides, resulting in

capacitance. The gds2cap capability

structures and analyzing critical cells,

higher mobility, greater drive strength,

includes a flexible polygon-processing

blocks and nets. QuickCap NX provides

lower switching currents, and lower

engine that handles multiple conformal

robust, consistent and accurate 3D

leakage currents. This 3D architecture

dielectrics, non-Manhattan geometries,

capacitance extraction with capacity

also introduces more complex

non-planar metals, metal fill, process

to handle moderately sized blocks or

geometries and many new capacitive

effects (OPC, CMP, Trapezoidal

long critical nets. QuickCap NX’s proven

elements that require highly accurate

wire), device recognition, resistance

modeling capabilities allow users to

modeling. QuickCap NX’s geometry

extraction and exclusion of device

perform accurate noise and timing

pre-processing engine provides a highly

capacitances. QuickCap NX takes the

analysis for robust design development

accurate physical profile of the FinFET

3D representation and the netlist output

and improved silicon success.

for modeling, and its graphical viewer

from the gds2cap interface, produces an

allows users to see exactly how the

output file containing self and coupling-

device will be modeled. Finally, the core

capacitance values and replaces the

Advanced 3D Modeling and Process Development

3-D field-solver engine of QuickCap

capacitance values in the netlist with

QuickCap NX includes the ability to

NX accurately extracts the capacitance

accurately computed values from

create 3-D physical models which

values from the model. Combined,

QuickCap NX.

precisely match actual process

these capabilities allow QuickCap NX

technology profiles. The unique

to provide the necessary precision to

capability allows foundries and early

model FinFET devices at 16-nm and

technology adopters to engage earlier

below, and as a result it has been

to explore device parasitic capacitance

adopted by leading foundries for this

effects in new technology nodes and

purpose.

accelerate the development schedules. An exclusive technology file encryption feature provides foundries with a secure method of sharing critical process information with their customers, allowing them to enhance the accuracy

V0

of their analysis and speedup the

M0

migration to new nodes. In addition,

M0 Gate

multicore capabilities and hierarchical processing significantly improve

Source

runtime, and a powerful 3D graphics viewer simplifies the development and

V0

Detailed Silicon Profile based 3D Modeling

Fin

Drain

Accurate Middle-of-line Parasitic Extraction

debug of new complex circuit structures and technology files. As a result,

Figure 2; QuickCap NX is used by foundries for advanced 14-nm FinFET modeling

QuickCap NX is broadly used in process studies, characterization and correlation across several generations of process nodes, and to support highly accurate device-level SPICE simulations.

QuickCap NX

2

As drawn

Width expanded = f (layer) Thickness = f (local density)

OPC width = f(w,s)

Sidewall shape = f(z)

Sidewall OPC = F(w,s,z)

Figure 3: QuickCap NX provides precise physical models of process effects

Proven Parasitic Capacitance Extraction QuickCap NX has demonstrated close correlation to silicon measurements at various process nodes. Its advanced modeling, including modeling of optical

Key Features Summary `` 3D modeling of FinFET devices at 14-nm and below `` Accurate extraction of self-coupling and distributed capacitance `` Robust and accurate handling of

and copper effects as well as indie

complex geometries including non-

process variations, enable increased

Manhattan structures, conformal

accuracy. The validation of QuickCap

dielectrics and floating metal

NX’s silicon accuracy by foundries has

`` Advanced process effects for in-die

Input yy GDSII or scripted text yy Output yy Back annotated SPICE netlist yy Capacitance summary in a matrix yy Platform/OS yy 64 bit Solaris and Linux For more information about Synopsys products, support services or

lead to its wide use in early process

process variation, optical and copper

training, visit us on the web at:

technology development and device

effects

www.synopsys.com, contact your

characterization.

`` 3D graphics viewer

local sales representative or call

For advanced users, QuickCap NX also

`` Dial-in accuracy and error bounds

650.584.5000.

provides a dial-in accuracy and errorbounds reporting on each net, providing the flexibility and control for their target application needs.

reporting for each net `` Low memory usage independent of accuracy `` Runtime independent of net length `` Exclusion of device capacitance and

Handling Large Layouts

optional inclusion of device fringe

QuickCap NX provides multiple

capacitance

techniques to enable critical net analysis

`` Parasitic reduction

in designs too large to fit in memory.

`` Flat and hierarchical processing

Runtime or memory use can be

`` Tile or bounded net analysis

reduced by using tiling, bounded nets,

`` Multicore processing

hierarchical processing,

`` Technology file encryption

multicore processing or a combination of these techniques.

Synopsys, Inc.  700 East Middlefield Road  Mountain View, CA 94043  www.synopsys.com ©2012 Synopsys, Inc. All rights reserved. Synopsys is a trademark of Synopsys, Inc. in the United States and other countries. A list of Synopsys trademarks is available at http://www.synopsys.com/copyright.html. All other names mentioned herein are trademarks or registered trademarks of their respective owners. 11/02.rd.CS2353.