Selected Topics in Quantum Electronics, IEEE Journal on - IEEE Xplore

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 6, NO. 3, MAY/JUNE 2000

405

Introduction to the Issue on Nanostructures and Quantum Dots

I

N THE summer of 1999, a LEOS Summer Topical Meeting was held in San Diego, CA, on the topic of nanostructures and quantum dots. Although this Special Issue of the IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS is not a proceedings of that meeting, the idea for a Special Issue on this topic was born in that program committee. The topic of nanostructures and quantum dots is remarkably pervasive, affecting both electronic and photonic device development and challenging researchers working on materials, devices, and systems. In fact, nanotechnology is usually identified as one of the three principal technologies of the new millennium, along with information technology and biotechnology. Our goal in developing this Special Issue was to assemble a small sample of some of the key challenges in nanotechnology, and quantum dots in particular. We solicited original research papers on structures and devices that contain more than one dimension of quantum confinement including: • materials growth and characterization of reduced dimension structures, particularly novel growth and assembly methods; • new and advanced processing techniques, both prior to growth and after growth, that enable formation of novel structures and devices; • characterization of the optical and electrical properties of reduced dimension structures; • device applications, including lasers, other photonic devices, and electronic devices; • electronic or photonic systems that exploit the unique features of reduced dimension structures.

Publisher Item Identifier S 1077-260X(00)07548-1.

We have here 18 invited and contributed papers that we think meet the goal originally set for this Special Issue. We hope that you agree, and that this volume becomes a primary reference source on the shelves of workers in this field for years to come. We want to thank the authors for their contributions, and for their patience during the review process. We also want to express our gratitude to the peer reviewers who have unselfishly invested significant time ensuring that this Special Issue meets the same high technical standards as other issues of this Journal. It is important to recognize the contributions, in many ways, of the program committee members of the LEOS Summer Topical Meeting on Nanostructures and Quantum Dots. Finally, we thank the IEEE staff, and Fran Jetko in particular, for a superb job in keeping everything organized and handled in a timely manner. It is not an easy job, but they make it look that way. JAMES J. COLEMAN, Guest Editor University of Illinois Department of Electrical and Computer Engineering Urbana, IL 61801 USA DENNIS G. DEPPE, Guest Editor The University of Texas at Austin Department of Electrical and Computer Engineering Austin, TX 78712 USA DIETER BIMBERG, Guest Editor Technische Universite Berlin Institut für Festkoerperphysik D-10623 Berlin, Germany YASUHIKO ARAKAWA, Guest Editor University of Tokyo Research Center for Advanced Science and Technology Tokyo 106, Japan

1077–260X/00$10.00 © 2000 IEEE

406


James J. Coleman (S’73–M’76–SM’80–F’92) received the B.S., M.S., and Ph.D. degrees in electrical engineering from the University of Illinois, Urbana. At Bell Laboratories, Murray Hill, NJ (1976–1978), he contributed to the development of long wavelength 1.3-mm InGaAsP CW room-temperature diode lasers grown by liquid phase epitaxy (LPE). At Rockwell International, Anaheim, CA (1978–1982), he studied MOCVD-grown low-threshold single-mode AlGaAs–GaAs double heterostructure and quantum-well heterostructure laser devices. Since 1982, he has been Professor of Electrical and Computer Engineering at the University of Illinois, Urbana. He and his students were the first group to define experimentally the ranges of wavelength, threshold current density, and reliability of 980-nm strained- layer InGaAs lasers. They are presently involved in developing high-performance narrow-linewidth DBR lasers, integrable lasers and other photonic devices by selective-area epitaxy, and the growth processes for quantum dot and quantum wire lasers. Prof. Coleman has published more than 325 papers in technical journals and nine book chapters. He holds three patents and has given more than 65 invited presentations. He is Associate Editor of IEEE PHOTONICS TECHNOLOGY LETTERS and has served as Guest Editor for two Special Issues of the IEEE JOURNAL OF QUANTUM ELECTRONICS and one other Special Issue of the IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. He is presently chair of the IEEE LEOS Optoelectronic Materials and Processing Technical Committee and a Member of the Joint Council on Quantum Electronics. He was an IEEE LEOS Distinguished Lecturer in 1997–1998 and 1998–1999. He is a Fellow of the Optical Society of America and the American Association for the Advancement of Science.

Dennis G. Deppe (S’98–M’90–SM’97–F’00) was born in Sparta, IL, on March 16, 1958. He received the B.S., M.S., and Ph.D. degrees in electrical engineering from the University of Illinois in 1981, 1984, and 1988, respectively. From 1988 to 1990, he was employed as Member of Technical Staff at AT&T Bell Laboratories, Murray Hill, NJ. In 1990, he joined the University of Texas at Austin as an Assistant Professor, and is now a Professor within the Electrical and Computer Engineering Department. His past research has involved the study of atom diffusion in III–V heterostructures and the identification of the important defect mechanisms, and semiconductor lasers. His past research includes the first continuous-wave operation of a III–V laser grown on Si, the first VCSEL’s grown on Si, early work on phased coupled VCSEL arrays, the first microcavity light emitting diode, the first oxide-confined VCSEL, and the first long wavelength (1.3 m) GaAs-based quantum dot lasers. He has published over 150 journal articles, authored or co-authored more than 90 conference and workshop contributed and invited presentations, and holds several patents in the area of III–V optoelectronic devices. Dr. Deppe has won the OSA Nick Holonyak, Jr., Award, the National Science Foundation Presidential Young Investigator Award, the Office of Naval Research Young Investigator Award, and holds the Robert and Jane Mitchell Endowed Faculty Fellowship in Engineering at UT-Austin.

Dieter Bimberg (M’92) was born in Schrozberg, Germany, on July 10, 1942. He received the Diploma in physics and the Ph.D. degree from the Goethe University, Frankfurt, Germany, in 1968 and 1971, respectively. From 1972 to 1979, he was a Senior Scientist with the Max Planck-Institute for Solid State Research, Stuttgart, Germany. From 1979 to 1981, he was an Associate Professor with the Department of Electrical Engineering, University of Aachen, Aachen, Germany. He presently holds the Chair of Applied Solid State Physics and is Director of the Solid State Physics Institute at the Technical University of Berlin, Berlin, Germany. He has authored more than 600 papers, patents, and books. His research interests include the physics of nanostructures and nanostructured devices, and high-speed photonic devices. He coordinates the DFB Center of Excellence on “Growth Related Properties of Nanostructures” and the national “Center of Competence on Nano-Optoelectronics.”


407

Yasuhiko Arakawa (S’77–M’80) was born in Aichi Prefecture, Japan, on November 26, 1952. He received the B.S., M.S., and Ph.D. degrees in electrical engineering from the University of Tokyo, Tokyo, Japan, in 1975, 1977, 1980, respectively. While he was in the graduate school he was doing research on information and communication theory. In 1980, he joined the Institute of Industrial Science, University of Tokyo, as Assistant Professor. He was promoted to Associate Professor and Full Professor, in 1981 and 1993, respectively. He was Visiting Scientist at California Institute of Technology, Pasadena, from 1984 to 1986 with Prof. A. Yariv. From 1989 to 1992, he was also Adjunct Associate Professor of Tokyo Institute of Technology. He is now Professor of the Research Center for Advanced Science and Technology, University of Tokyo, heading the Nanostructure Device Laboratory. Since he proposed the quantum dot lasers and demonstrated the quantum dot effect in semiconductor lasers using high magnetic fields in 1982 with H. Sakaki, he has been intensively doing research on the quantum dot lasers, both experimentally and theoretically. His current research is on growth and physics of semiconductor nanostructures with single dot spectroscopy as well as optoelectronics devices of the next generation, including III–V nitride-based lasers. Dr. Arakawa was awarded the Niwa Memorial Prize (1980), Excellent Paper Award, Young Scientist Award from International Compound Semiconductor Symposium (1991), Distinguished Achievement from Institute of Electronics and Communication Engineering (1991), IBM Scientist Award (1992), Hattori–Hoko Award (1993), and Sakurai–Kenjiro Memorial Award (1998) for his pioneering contribution to fundamentals of quantum dot optical devices. He has been serving several international conferences as General Chairs, including the 17th IEEE Semiconductor Laser Conference. He was Associate Editor of IEEE JOURNAL OF QUANTUM ELECTRONICS from 1995 to 1999. He is currently Editor-in-Chief of the Journal of Japanese Society of Applied Physics and Solid Sate Electronics, respectively.