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Selective Reactive Ion Etching of Tungsten Films in Fluorinated Gases
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Selective Reactive Ion Etching of Tungsten Films in Fluorinated Gases
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The use of reactive ion etching (RIE ) with fluorinated
gas
plasmas, such as ... selectivity, the optimum W:SiO2 etch rate ratio measured is 1:46 in pure CHF,
gas
.
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