SOLID STATE RF AMPLIFIERS FOR ACCELERATOR ... - HAL-IN2P3

Vancouver, May 5th 2009, PAC09 - TU4RAI01

SOLID STATE RF AMPLIFIERS FOR ACCELERATOR APPLICATIONS

1

Marco Di Giacomo - PAC09 - TU4RAI01

Laboratoire commun CEA/DSM - CNRS/IN2P3

Marco Di Giacomo

ACKNOWLEDGEMENTS


E. Jensen, M. Pasini and M. Paoluzzi (CERN), J. Lyles (LANL), M. Gaspar (SLS), P. Marchand and R. Lopes (Synchrotron Soleil), S. Belomestnykh (Cornell), P. Dupire (Bruker Biospin), S. Heisen and A. Wolfang (AFT GmbH), W. Matziol (VALVO GmbH), M. Pesce (Res Ingenium), M. Rossi (DB Elettronica), …………………………… Sorry for those I missed ….

2



F. Scarpa, A. Facco (INFN/LNL), N. Schiaccianoci and M. Ducci (ST Microelectronics),

Contents


• Acknowledgements

•

Historical Introduction

•

Commercial Applications and Available Devices

•

RF Power Mosfet Manufacturing Process

• Solid State Amplifier Architecture • Splitter/Combiners • Circulators • Examples of Accelerator Applications • Conclusion

3



• Silicon Technology

Introduction


First RF silicon device: Bipolar Junction Transistor (BJT) but : • thermal runaway => temperature compensated bias circuits • secondary breakdown => reduced safe operating areas. Vacuum electron tubes were preferred for medium and high power applications SS amplifiers were mainly used as driver stages with output CW power up to some hundreds watts at few hundreds MHz.

4



Solid state amplifiers are based on transistors instead of vacuum electron tubes as active device.

Introduction


Revolution: Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

But manufacturing only permitted by the development of the integrated circuit technology, (1963, Bell Laboratories, Atalla and Khang). • 70’s: Vertical Mosfets (VMOS) • 80’s: first UHF low power applications • 90’s: (Vertical) Diffusion Mosfets (DMOS) and Lateral Diffusion Mosfets (LDMOS, Motorola). 5



• BJT patent: 1948 by William Shockley • Mosfet patent: 1933 Julius Edgar Lilienfeld Higher gain, VSWR, lower noise, no drawbacks

RF Transistor Applications


6



RF Power silicon technology has been strongly boosted by several applications, mainly divided in five big sectors: ~1000 M$ in 2008.


Transistor technology

Impressive progress during last 20 years Today, the whole band for accelerator applications is covered Some of the presently available output RF Power/transistor vs Frequency dotted line : pulsed mode (~20%) performances mdg March 2009

1100 1000 900 800 700

BLF574 2008 600 CW

600 SD2942 2006 SP2 88 MHz

500

BLF888 2008 110W CW

DMD1029 2006 Eurisol 352 MHz different narrow band devices from 2.4 to 6 GHz

400 300

MRF6V43 2008 CW

200 100

BLF 548 1992 Soleil 352 MHz

0 10

100

MHz

1000

10000

7


Power (Watt)


NXP Semelab ST Mcroelectronics Freescale

MRF6VP21 2008 125W CW


Transistor technology Performance issues: Electrostatic Protections (ESD) VSWR Gain Breakdown Voltage Efficiency

Cost issues Wafer sizes Manufacturing process Thermal conducting plastic packages

80% 70% 60% 50% 40% 30% 20% 10% 0%

FET GaAs LDMOS

50 V 28 V 12 V

0

1000

2000

3000

4000

5000

6000

7000

MHz

GaN couples the high frequency capability of GaAs and the high power and voltage capabilities of Si LDMOS

8



Drain efficiency at highest frequencies

RF power Mosfet manufacturing process


Process Diffusing Sawing Stratching Picking Wire bonding Closing

Die Picking

9



Manufacturing Small Scale Integration: few thousands of device/wafer 6” and 8” Si wafers (thickness: 0.1 to 0.25 mm)

Contents


•


•

Commercial Applications and available devices

•


• SS amplifier architecture • Splitter/Combiners • Circulators • Accelerator applications • Conclusion • Acknowledgements / References 10



• Solid State Technology


Amplifier Architecture

Control and protections

Ohm

Input matching stage

BIAS CIRCUIT

RF MOSFET

Output matching stage

SD2942 ® STMicroelectronics

14 12

r in

j in

10

r dl

j dl

8 6 4 2 0 -2 -4 -6 0

50

100

150

200

250

300

MHz

11



Power Amplifier elementary stage: pallet Very low input and output impedances 1 transistor/pallet Input and output transformers highly th. conducting metallic ground plane



• 140 W pallet – • 0,5 to 6 MHz • VSWR>10 without circulator • 1 transistors/pallet • © CERN, M. Paoluzzi

• • • •

330 W module 352 or 500 MHz, different devices 1 transistor/pallet 1 circulator/transistor

• © Synchrotron SOLEIL - Ti Ruan 12



Pallet Examples



Pallet Examples

13



800W pallet 88 to108 MHz 2 transistors/pallet © DB ELETTRONICA For SPIRAL2



2 x 500W pallets 4 transistors/pallet 1 kW pulsed RF module – 1.3 GHz © BRUKER 2008 For ELBE, Dresden-Rossendorlf

14



Module Examples


Amplifier Architecture Splitting/Combining

• Management of reflected power required by accelerator applications • Isolated dividers and couplers (case1) can be used to avoid oscillations or other phenomena which could bring to the transistor destruction. • Circulators can also be used to decouple each amplifier, making it unconditionally stable, and in this case non isolated splitter/combiners can be used (case2). • At low frequencies, transistor operated at ~50% of its possibilities driver

C

A1

÷

S AN

A1 driver

C

÷

S AN

C

15



• Several blocks combined together to obtain higher output power, • Arrangement depends on application to fit the required amount of RF power • N-way splitters and combiners required



Combining Arrangement Examples 25kW combiner

2-way divider

10-way divider

50kW combiner

Pi=50W

Po=50kW

315W Amp

50kW directional coupler

2.5 kW Amp

2.5 kW Amp

8-way divider

315W Amp

2.5kW combiner

16



Soleil – 352 MHz 50 kW Amp



Combining Arrangement Considerations

• In case of failure of a few transistors, the solid state architecture grants significant amount of power being still available. • In principle, it is possible to replace a broken module without interrupting the amplifier operation.

17



• Any arrangement is possible to fit the single project requirements

Contents


• SS Technology •


•


•


• Splitter/Combiners • Circulators • Accelerator applications • Conclusion • Acknowledgements / References 18



• SS amplifier architecture

Splitter/Combiners


• Design based on quarter wave sections of transmission lines : => narrow band but some tricks exist to wide the operating bandwidth. • At lower frequencies, they can be realised with lumped elements. 19



• Passive, multiport, reciprocal: => the same device can be used to divide or combine signals.

Splitter/Combiners


Y (or star) junction: N Ways

20



• simplest way to split/combine signals • two different schemes, well adapted to coax or micro strips • in-phase signals, no resistor



10-way divider

200 kW

100 kW

25 kW

8-way divider

2-way divider

2.5 kW

©Synchrotron Soleil

21


Splitter/Combiners


The Y junction has the advantages of requiring no resistors and in phase signals, but: • It doesn’t isolate the ports, whose impedance depends on the matching conditions on the other arms. • It can be used only with unconditionally stable amplifier modules, embedding circulators to decouple direct and reverse powers. Isolated combiners use one or more resistors to absorb non combined power. The resistor can be embedded in the network as in the Wilkinson 22



Splitter/Combiners

Splitter/Combiners


a)

b)

23



Wilkinson: N-Ways

Splitter/Combiners


Wilkinson

Resistor has no effect on in-phase and equal amplitude signals but allows the 3 ports to be matched while isolating ports 2 and 3 for different values of phase or amplitude. Resistor is embedded into the network, and must provide a short phase length for the scheme to work. At high power or frequency, the Gysel combiner is preferred. 24



The simplest configuration bandwidth is very narrow but it can be enlarged by placing a transmission line section on the input arm

Splitter/Combiners


2-way scheme

2.5 kW, 5-ways, 211 MHz ©RES INGENIUM

5-way scheme

25



Gysel: N-Ways

Splitter/Combiners


The terminations in a Gysel are equal to Z0, and can be high-power loads. They can be external to the power splitter as any length of Z0 transmission line can be added between the loads and the splitter. It is also possible to measure the two resistors in parallel, even if they are grounded to the substrate. The Gysel scheme is largely used for N-way combiners in the 80 to 200 MHz range of frequency, avoiding the use of circulators on each pallet. It can be easily realised in microstrip or in in-air structures

26



Gysel

Splitter/Combiners


3 kW, 4-ways 88÷108 MHz ©DB Elettronica

27



Gysel

Splitter/Combiners


20 kW – 88÷108 MHz -3 dB coupled line 2-way combiner ©DB Elettronica

28



-3dB Hybrid: 2-Way works with 90°phase signals and Zc resistor

Contents


• Acknowledgements / References

•


•


•


• Solid state amplifier architecture • Splitter/Combiners

• Circulators • Accelerator applications • Conclusion 29




Circulators


Diplexer application and Isolator if a dummy load replaces the receiver 30



Circulators are passive, multiport, non reciprocal devices transferring the power from one port to another in a prescribed order. 3-port circulators are the most common in accelerator application

Circulators


Several circulator types exist but

When using coaxial connectors, the 3-plate configuration is normally used, where two plates of ferrite are put between the inner and outer conductors.

120° symmetry

31



the junction one is the most commonly used as it can be implemented on strip (low power) or in-air (high power) lines as well as on waveguides.

Circulators


32



• The line entering each port is split in two equal branches going towards the other two ports (120°symmetry). • Due to the interaction with the magnetised ferrite, the split entering waves at port 1, have different speeds such as they are in-phase when they arrive at port 2 (where they recombine) and in opposite phase at port 3 where they cancel.


Circulators 3 plate configuration Medium power Microstrip inner conductor: matching networks cavity

2) Ferrite disk

4) Pemanent magnet disk

3) Outer conductor 5) Closed package

© VALVO GmbH 33



1) • •


Circulators

3 plates - High power: 60 kW, 88 MHz (Spiral 2)

34



Ferrite plate

Contents



•


•


•


• Solid state amplifier architecture • Splitter/Combiners • Circulators

• Examples of Accelerator Applications • Conclusion

35




Applications


Solid state amplifiers have been built or are foreseen for very different applications, let me choose the following examples:

• Master generator amplifier: Lansce … (‘94, BJT, 0.9 kW, 805 MHz) • NC ion injectors: CERN, JPARK, GSI, … (LF, up to several kW) • Ions SC linac: Atlas, Alpi, SPIRAL2 2, FRIB … (up to tens of kW) • Protons, Deuteron SC Linacs: Saraf, Eurisol … (up to tens of kW) • Light sources : SOLEIL, LNLS, SLS … (up to hundreds of kW) • …………………………………………. and many others. 36



(Italic: not yet in operation: under construction or foreseen)

Applications


37



© LANSCE 1994, J.Lyles 900W CW module – 805 MHz 4x240W pallets 2 BJTs/pallet

Applications


J-PARK : 8 and 4 kW units (Thanks to Dr C. Ohmori)

CERN DESIGN 1 kW rack (© M. Paoluzzi)

38



CERN LEIR AND J-PARK : 0,5 – 6 MHz, no circulators 1 kW racks 9 pallets/rack up to 8 kW amplifiers

800W Power Supply 800W

Power Supply

Σ ÷

800W Power Supply 800W

Control logic Water cooled 3 kW Solid State Rack

Linac amplifier power budget

mdg 03/09/08

25 Beam Loading or cavity loss Margin power +30%

20

Amplifier and circulator power

15

Net power

kW 10 5

B1 4 C

B1 2 C

B1 0 C

B8 C

B6 C

B4 C

B2 C

A9

A1 1 C

C

A7 C

A5 C

3

A3 C

C

1

EG R

A1

0 EG

Air cooled

R


70W

39


SPIRAL2: 88 MHz, ion, high current SC driver (5mA) 20 kW amplifiers prototype (© DB Elettronica) (2x10 kW cabinets, 8x2.8kW racks

380 kW total installed power


Applications

Applications


40



EURISOL driver: 352 MHz, proton SC linac 10 kW prototype amplifier 10 kW cabinets, 36x350W modules, circulators embedded INFN/LNL © Fabio Scarpa

Applications


41



Synchrotron SOLEIL: (Ti Ruan) 352 MHz, 180 kW amplifiers; 4x45 kW towers 35kW + 4x180 kW installed

Contents



•


•


•


• Solid state amplifier architecture • Splitter/Combiners • Circulators • Accelerator applications

• Conclusion 42




Conclusion


Today, the whole range of frequency for accelerator applications is covered at very competitive prices and performances. Several industrial applications push the development of solid state RF devices in a very large range of frequencies: up to 3.7 GHz.

Operating advantages vs tubes • • • • • •

absence of high biasing voltages longer life times (more than 80000 hours at LANL or CERN) easier and quicker maintenance, possibility of reduced power operation in case of failure, fit ≠ power levels inside the same project, with one elementary brick. Stable gain with aging

Reliable and efficient operation up to 200 kW at 350 MHz has already been proved. Similar levels at 500 MHz are already planned (PSI, … ). 43



Tube prices increase (when their manufacture is not simply stopped) as the market is falling down.


Conclusion Next future

RF POWER SOURCES FOR CW SRF LINACS klystrons 1000 HIGH POWER

VHF BAND

UHF BAND

MEDIUM POWER

100

Solid state amplifiers

IOTs

10 LOW POWER

1 10

100

1000

10000

FREQUENCY, MHZ

Original diagram by S. Belomestnykh: RF systems for CW SRF linacs, Linac08

44



“NO” circulators

AVERAGE POWER, KW

Circulators and transistors available

L B A N D

END


Thank you for your attention

• Publications of people listed in the acknowledgements and available on the JACoW website. • Transistor manufacturers websites • Wikipedia and Microwave Encyclopediae Sorry for not talking at all about power supply schemes and operation monitoring issues. 45



References

RF Transistor Applications


• Industrial laser • Nuclear magnetic resonance (NMR) • Plasma generator for semiconductors • Plasma generator for display panels • Spectroscopy • RF heating

46



Industrial, Scientific, Medical Applications

RF Power Device Market


RF Power Device market (M$)

1000 900 800 600 500 400 300 200 100 0 2007

2008

2009 All segments

2010

2011

2012

W ithout Cellular Infrastructure

47



700

SOLID STATE RF AMPLIFIERS FOR ACCELERATOR ... - HAL-IN2P3

SOLID STATE RF AMPLIFIERS FOR ACCELERATOR ... - HAL-IN2P3

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