SRM UNIVERSITY FACULTY OF ENGINEERING AND ...

SRM UNIVERSITY FACULTY OF ENGINEERING AND TECHNOLOGY SCHOOL OF ELECTRONICS AND ELECTRICAL ENGINEERING DEPARTMENT OF ECE COURSE PLAN Course Code Course Title Semester Course Time Location

: : : : :

EC0203 ELECTRON DEVICES III JULY – NOVEMBER 2011 S.R.M.E.C

Faculty Details: Sec. Name

Office

A

Mrs.V.Padmajothi

TP1003

B

Mrs. S.Kayalvizhi

TP903A

C

Mrs. B. Theivanayaki

TP903A

D

NS-10

E

Ms.V.K.Daliya

F

NS-1

TP903A

Office hour Day-2 2nd, 4th ,Day-4 1st, 5th hours Day-1 2nd, Day-3 3rd, Day-5 4th, 7th hours Day-2 1st, Day-3 7th, Day-4 2nd, 5th hours Day-1 4th, Day-2 2nd, Day-3 1st, Day-4 7th hours

Mail id [email protected] [email protected] [email protected]

[email protected]

Required Text Books: 1. Ben G. Streetman and Sanjay Kumar Banerjee. “Solid State Electronic Devices”, 6th Edition, Pearson Education 2. Robert L. Boylestad and Louis Nashelsky, “Electronic Devices and Circuit Theory” , 9th Edition – Pearson Education, International Edition. 3. Donald A. Neamen, “Semiconductor Physics and Devices, 2nd Edition, Irwin publishers. 4. S.M. Sze, “Physics of Semiconductor Devices”, 2nd edition, Wiley Eastern 5. Stanley G. Burns and Paul R. Bond ,“ Principles of Electronic Circuits”, Galgotia Publishers Web Resources : www.wikipedia.org www.allaboutcircuits.com Prerequisite

: Nil

Objectives: 1. 2. 3. 4. 5.

To understand the operational characteristics of semiconductor devices under equilibrium and non equilibrium conditions. To study the working principle of PN Junction diodes and Special purpose diodes. To understand the basic construction and working principles of BJT and FET under ideal and non ideal conditions. To study the working physics of High power Devices. To understand the working concept of all the Blocks in Power Supplies.

Assessment Details: Cycle Test – I Cycle Test – II Model Exam Surprise Test Attendance

: : : : :

10 Marks 10 Marks 20 Marks 5 Marks 5 Marks

Test Schedule S.No. 1 2 3

DATE(Tentative) 4th week of August 4th week of September 1st week of October

TEST Cycle Test-1 Cycle Test-2 Model Test

PORTIONS Session 1 to 11 Session 12 to 21 Session 1 to 45

DURATION 2 Periods 2 Periods 3 Hrs

Outcomes Students who have successfully completed this course Instruction Objective Program outcome 1.To understand the operational characteristics of a Semiconductor in Equilibrium and Non-Equilibrium Conditions. 2. To understand the working of PN junction diodes and special purpose diodes. 3. To understand the basic working physics of BJT and FET both in ideal and non-ideal conditions.

a) Graduates will demonstrate knowledge of mathematics, science and engineering. b) Graduates will demonstrate the ability to identify, formulate and solve engineering problems c) Graduates will demonstrate the ability to design and conduct experiments, analyze and interpret data. d) Graduates will demonstrate the ability to design a system, component or process as per needs and specifications k) Graduates will show the ability to participate and try to succeed in competitive examinations.

Detailed Session Plan ENERGY BANDS AND EXCESS CARRIERS IN SEMICONDUCTORS Energy bands and excess carriers in semiconductors: Bonding forces and Energy Bands in Solids – Charge Carriers in Semiconductors – Carrier concentrations – Drift of Carriers in Electric and Magnetic Fields – Invariance of the Fermi level at Equilibrium. Excess carriers in semiconductors: Optical Absorption – Luminescence – Carrier Lifetime and Photoconductivity – Diffusion of Carriers. Sessi Topics to be covered on No. 1 Bonding forces and Energy Bands in Solids

Text Book

Chapter No & Page No Chap-3 Page no: 55-66

Instruction Objective

Program Outcome

a) Graduates will demonstrate knowledge of mathematics, science and engineering.

2

Charge Carriers in Semiconductors

Chap-3 Page no: 66-80

b) Graduates will demonstrate the ability to identify, formulate and solve engineering problems

3

Carrier concentrations


b) Graduates will demonstrate the ability to identify, formulate and solve engineering problems

Ben G. Streetman and Sanjay Kumar Banerjee. “Solid State Electronic Devices”


1.To understand the operational characteristics of a Semiconductor in Equilibrium and NonEquilibrium Conditions.

4

Drift of Carriers in Electric Field

5.

Drift of Carriers in Electric Field

6.

Invariance of the Fermi level at Equilibrium



7

Optical Absorption and Luminescence



8

Carrier Lifetime and Photoconductivity


b) Graduates will demonstrate the ability to identify, formulate and solve


b) Graduates will demonstrate the ability to identify, formulate and solve engineering problems b) Graduates will demonstrate the ability to identify, formulate and solve engineering problems

engineering problems 9

Diffusion of Carriers



SEMICONDUCTOR JUNCTIONS Junctions : Equilibrium Conditions – Forward and Reverse Biased Junctions – Reverse Bias Breakdown – Transient and AC Conditions – Deviations from the Simple Theory – Metal-Semiconductor Junctions. Opto-electronic devices: Photodiodes – Light Emitting Diodes – Lasers and Semiconductor Lasers Sessio n No.

Topics to be covered

10

Equilibrium Conditions

11

Forward and Reverse Biased Junctions

12

Reverse Bias Breakdown.

Text Book


Instruction Objective .


Ben G. Streetman and Sanjay Kumar Banerjee. “Solid State Electronic Devices”


Program Outcome

a)Graduates will demonstrate knowledge of mathematics, science and engineering. c) Graduates will demonstrate the ability to design and conduct experiments, analyze and interpret data. d) Graduates will demonstrate the ability to design a system, component or process as per needs and specifications

1. To understand the working of PN junction diodes and special purpose diodes. .

c) Graduates will demonstrate the ability to design and conduct experiments, analyze and interpret data.

13

Transient and AC Conditions



14

Deviations from the Simple Theory



15

Metal-Semiconductor Junctions



16

Photodiodes Chap-8 Page no: 379-390


17

Light Emitting Diodes

18

Lasers and Semiconductor Lasers



c) Graduates will demonstrate the ability to design and conduct experiments, analyze and interpret data. a) Graduates will demonstrate knowledge of mathematics, science and engineering.

SOLID STATE DEVICES-I Bipolar Junction Transistors: Fundamentals of BJT Operation – Amplification with BJT’s – Minority Carrier Distributions and Terminal Currents – Generalized Biasing – Switching – Other Important Effects – Frequency Limitations of Transistors – Hetero junction Bipolar Transistors Field Effect transistors: Transistor Operation – The junction FET – The Metal-Semiconductor FET – The Metal-Insulator-Semiconductor FET – The MOS FET Sessio n No.

Topics to be covered

Text Book


Instruction Objective

Program Outcome

19

Fundamentals of BJT Operation

20

Amplification with BJT’s



21

Minority Carrier Distributions and Terminal Currents



22

Generalized Biasing and Switching

23

Frequency Limitations of Transistors

24

Ben G. Streetman and Sanjay Kumar Banerjee. “Solid State Electronic Devices”,



1. To understand the basic working physics of BJT and FET both in ideal and non-ideal conditions.




Hetero junction Bipolar Transistors



25

Transistor Operation – The junction FET



26

The Metal-Semiconductor FET



27

The Metal-InsulatorSemiconductor FET – The MOS FET


a)Graduates will demonstrate knowledge of mathematics, science and engineering.

SOLID STATE DEVICES-II Charge transfer devices: Dynamic Effects in MOS Capacitors – The basic CCD – Improvements on the Basic Structure – Applications of CCD’s. High-frequency and high-power devices: Tunnel Diodes – IMPATT Diode – Gunn Diode – PNPN Diode – SCR – IGBT – DIAC – TRIAC - UJT. Sessio Topics to be covered n No. 28 Dynamic Effects in MOS Capacitors and basic CCD

Text Book



Program Outcome a) Graduates will demonstrate knowledge of mathematics, science and engineering.

29

Improvements on the Basic Structure and applications of CCD’s.



30

Tunnel Diodes



31

IMPATT Diode

32

Gunn Diode

33

PNPN Diode

34

SCR and IGBT

35

DIAC and TRIAC

36

UJT

Ben G. Streetman and Sanjay Kumar Banerjee. “Solid State Electronic Devices”,


Chap-10 Page no: 494-500 Chap-11 Page no: 504-511

Robert L. Boylestad and Louis Nashelsky , “Electronic Devices and Circuit Theory”

1. To understand the working of PN junction diodes and special purpose diodes.


c) Graduates will demonstrate the ability to design and conduct experiments, analyze and interpret data. d) Graduates will demonstrate the ability to design a system, component or process as per needs and specifications c) Graduates will demonstrate the ability to design and conduct experiments, analyze and interpret data.







POWER SUPPLIES Half wave Rectification – Full wave Rectification – General filter consideration – Capacitor Filter – RC Filter – Discrete Transistor Voltage Regulation – IC Voltage Regulators – Practical Applications – SMPS. Sessi Topics to be covered on No. 37 Half wave Rectification

38

Text Book

Full wave Rectification Robert L. Boylestad and Louis Nashelsky , “Electronic Devices and Circuit Theory”



39

General filter consideration


40

Capacitor Filter and RC Filter

41

Discrete Transistor Voltage Regulation-series


42

Discrete Transistor Voltage Regulation-shunt


43

IC Voltage Regulators

44

SMPS

45

Practical Applications



S Salivahanan, N Suresh Kumar” Electron devices and Electronic Circuits” Robert L. Boylestad and Louis Nashelsky , “Electronic Devices and Circuit Theory”


1. To understand the working of PN junction diodes and special purpose diodes.


Program Outcome

c) Graduates will demonstrate the ability to design and conduct experiments, analyze and interpret data. c) Graduates will demonstrate the ability to design and conduct experiments, analyze and interpret data. d) Graduates will demonstrate the ability to design a system, component or process as per needs and specifications d) Graduates will demonstrate the ability to design a system, component or process as per needs and specifications d) Graduates will demonstrate the ability to design a system, component or process as per needs and specifications d) Graduates will demonstrate the ability to design a system, component or process as per needs and specifications a) Graduates will demonstrate knowledge of mathematics, science and engineering.

Chap-11 Page no: 11.4111.49


