Robert L. Boylestad and Louis Nashelsky, “Electronic Devices and Circuit Theory
” , 9th Edition –. Pearson Education, International Edition. 3. Donald A. Neamen ...
SRM UNIVERSITY FACULTY OF ENGINEERING AND TECHNOLOGY SCHOOL OF ELECTRONICS AND ELECTRICAL ENGINEERING DEPARTMENT OF ECE COURSE PLAN Course Code Course Title Semester Course Time Location
: : : : :
EC0203 ELECTRON DEVICES III JULY – NOVEMBER 2011 S.R.M.E.C
Faculty Details: Sec. Name
Office
A
Mrs.V.Padmajothi
TP1003
B
Mrs. S.Kayalvizhi
TP903A
C
Mrs. B. Theivanayaki
TP903A
D
NS-10
E
Ms.V.K.Daliya
F
NS-1
TP903A
Office hour Day-2 2nd, 4th ,Day-4 1st, 5th hours Day-1 2nd, Day-3 3rd, Day-5 4th, 7th hours Day-2 1st, Day-3 7th, Day-4 2nd, 5th hours Day-1 4th, Day-2 2nd, Day-3 1st, Day-4 7th hours
Mail id
[email protected] [email protected] [email protected]
[email protected]
Required Text Books: 1. Ben G. Streetman and Sanjay Kumar Banerjee. “Solid State Electronic Devices”, 6th Edition, Pearson Education 2. Robert L. Boylestad and Louis Nashelsky, “Electronic Devices and Circuit Theory” , 9th Edition – Pearson Education, International Edition. 3. Donald A. Neamen, “Semiconductor Physics and Devices, 2nd Edition, Irwin publishers. 4. S.M. Sze, “Physics of Semiconductor Devices”, 2nd edition, Wiley Eastern 5. Stanley G. Burns and Paul R. Bond ,“ Principles of Electronic Circuits”, Galgotia Publishers Web Resources : www.wikipedia.org www.allaboutcircuits.com Prerequisite
: Nil
Objectives: 1. 2. 3. 4. 5.
To understand the operational characteristics of semiconductor devices under equilibrium and non equilibrium conditions. To study the working principle of PN Junction diodes and Special purpose diodes. To understand the basic construction and working principles of BJT and FET under ideal and non ideal conditions. To study the working physics of High power Devices. To understand the working concept of all the Blocks in Power Supplies.
Assessment Details: Cycle Test – I Cycle Test – II Model Exam Surprise Test Attendance
: : : : :
10 Marks 10 Marks 20 Marks 5 Marks 5 Marks
Test Schedule S.No. 1 2 3
DATE(Tentative) 4th week of August 4th week of September 1st week of October
TEST Cycle Test-1 Cycle Test-2 Model Test
PORTIONS Session 1 to 11 Session 12 to 21 Session 1 to 45
DURATION 2 Periods 2 Periods 3 Hrs
Outcomes Students who have successfully completed this course Instruction Objective Program outcome 1.To understand the operational characteristics of a Semiconductor in Equilibrium and Non-Equilibrium Conditions. 2. To understand the working of PN junction diodes and special purpose diodes. 3. To understand the basic working physics of BJT and FET both in ideal and non-ideal conditions.
a) Graduates will demonstrate knowledge of mathematics, science and engineering. b) Graduates will demonstrate the ability to identify, formulate and solve engineering problems c) Graduates will demonstrate the ability to design and conduct experiments, analyze and interpret data. d) Graduates will demonstrate the ability to design a system, component or process as per needs and specifications k) Graduates will show the ability to participate and try to succeed in competitive examinations.
Detailed Session Plan ENERGY BANDS AND EXCESS CARRIERS IN SEMICONDUCTORS Energy bands and excess carriers in semiconductors: Bonding forces and Energy Bands in Solids – Charge Carriers in Semiconductors – Carrier concentrations – Drift of Carriers in Electric and Magnetic Fields – Invariance of the Fermi level at Equilibrium. Excess carriers in semiconductors: Optical Absorption – Luminescence – Carrier Lifetime and Photoconductivity – Diffusion of Carriers. Sessi Topics to be covered on No. 1 Bonding forces and Energy Bands in Solids
Text Book
Chapter No & Page No Chap-3 Page no: 55-66
Instruction Objective
Program Outcome
a) Graduates will demonstrate knowledge of mathematics, science and engineering.
2
Charge Carriers in Semiconductors
Chap-3 Page no: 66-80
b) Graduates will demonstrate the ability to identify, formulate and solve engineering problems
3
Carrier concentrations
Chap-3 Page no: 80-92
b) Graduates will demonstrate the ability to identify, formulate and solve engineering problems
Ben G. Streetman and Sanjay Kumar Banerjee. “Solid State Electronic Devices”
Chap-3 Page no: 92-102
1.To understand the operational characteristics of a Semiconductor in Equilibrium and NonEquilibrium Conditions.
4
Drift of Carriers in Electric Field
5.
Drift of Carriers in Electric Field
6.
Invariance of the Fermi level at Equilibrium
Chap-3 Page no: 102-104
a) Graduates will demonstrate knowledge of mathematics, science and engineering.
7
Optical Absorption and Luminescence
Chap-4 Page no: 108-114
a) Graduates will demonstrate knowledge of mathematics, science and engineering.
8
Carrier Lifetime and Photoconductivity
Chap-4 Page no: 114-124
b) Graduates will demonstrate the ability to identify, formulate and solve
Chap-3 Page no: 92-102
b) Graduates will demonstrate the ability to identify, formulate and solve engineering problems b) Graduates will demonstrate the ability to identify, formulate and solve engineering problems
engineering problems 9
Diffusion of Carriers
Chap-4 Page no: 124-138
a) Graduates will demonstrate knowledge of mathematics, science and engineering.
SEMICONDUCTOR JUNCTIONS Junctions : Equilibrium Conditions – Forward and Reverse Biased Junctions – Reverse Bias Breakdown – Transient and AC Conditions – Deviations from the Simple Theory – Metal-Semiconductor Junctions. Opto-electronic devices: Photodiodes – Light Emitting Diodes – Lasers and Semiconductor Lasers Sessio n No.
Topics to be covered
10
Equilibrium Conditions
11
Forward and Reverse Biased Junctions
12
Reverse Bias Breakdown.
Text Book
Chapter No & Page No Chap-5 Page no: 157-169
Instruction Objective .
Chap-5 Page no: 169-185
Ben G. Streetman and Sanjay Kumar Banerjee. “Solid State Electronic Devices”
Chap-5 Page no: 185-193
Program Outcome
a)Graduates will demonstrate knowledge of mathematics, science and engineering. c) Graduates will demonstrate the ability to design and conduct experiments, analyze and interpret data. d) Graduates will demonstrate the ability to design a system, component or process as per needs and specifications
1. To understand the working of PN junction diodes and special purpose diodes. .
c) Graduates will demonstrate the ability to design and conduct experiments, analyze and interpret data.
13
Transient and AC Conditions
Chap-5 Page no: 194-210
a) Graduates will demonstrate knowledge of mathematics, science and engineering.
14
Deviations from the Simple Theory
Chap-5 Page no: 211-220
a) Graduates will demonstrate knowledge of mathematics, science and engineering.
15
Metal-Semiconductor Junctions
Chap-5 Page no: 220-232
a) Graduates will demonstrate knowledge of mathematics, science and engineering.
16
Photodiodes Chap-8 Page no: 379-390
c) Graduates will demonstrate the ability to design and conduct experiments, analyze and interpret data.
17
Light Emitting Diodes
18
Lasers and Semiconductor Lasers
Chap-8 Page no: 390-396
Chap-8 Page no: 396-410
c) Graduates will demonstrate the ability to design and conduct experiments, analyze and interpret data. a) Graduates will demonstrate knowledge of mathematics, science and engineering.
SOLID STATE DEVICES-I Bipolar Junction Transistors: Fundamentals of BJT Operation – Amplification with BJT’s – Minority Carrier Distributions and Terminal Currents – Generalized Biasing – Switching – Other Important Effects – Frequency Limitations of Transistors – Hetero junction Bipolar Transistors Field Effect transistors: Transistor Operation – The junction FET – The Metal-Semiconductor FET – The Metal-Insulator-Semiconductor FET – The MOS FET Sessio n No.
Topics to be covered
Text Book
Chapter No & Page No Chap-7 Page no: 322-325
Instruction Objective
Program Outcome
19
Fundamentals of BJT Operation
20
Amplification with BJT’s
Chap-7 Page no: 325-329
a) Graduates will demonstrate knowledge of mathematics, science and engineering.
21
Minority Carrier Distributions and Terminal Currents
Chap-7 Page no: 332-340
c) Graduates will demonstrate the ability to design and conduct experiments, analyze and interpret data.
22
Generalized Biasing and Switching
23
Frequency Limitations of Transistors
24
Ben G. Streetman and Sanjay Kumar Banerjee. “Solid State Electronic Devices”,
Chap-7 Page no: 340-346
a) Graduates will demonstrate knowledge of mathematics, science and engineering.
1. To understand the basic working physics of BJT and FET both in ideal and non-ideal conditions.
c) Graduates will demonstrate the ability to design and conduct experiments, analyze and interpret data.
Chap-7 Page no: 365-371
a) Graduates will demonstrate knowledge of mathematics, science and engineering.
Hetero junction Bipolar Transistors
Chap-7 Page no: 371-374
a) Graduates will demonstrate knowledge of mathematics, science and engineering.
25
Transistor Operation – The junction FET
Chap-6 Page no: 241-251
c) Graduates will demonstrate the ability to design and conduct experiments, analyze and interpret data.
26
The Metal-Semiconductor FET
Chap-6 Page no: 251-255
a) Graduates will demonstrate knowledge of mathematics, science and engineering.
27
The Metal-InsulatorSemiconductor FET – The MOS FET
Chap-6 Page no: 255-316
a)Graduates will demonstrate knowledge of mathematics, science and engineering.
SOLID STATE DEVICES-II Charge transfer devices: Dynamic Effects in MOS Capacitors – The basic CCD – Improvements on the Basic Structure – Applications of CCD’s. High-frequency and high-power devices: Tunnel Diodes – IMPATT Diode – Gunn Diode – PNPN Diode – SCR – IGBT – DIAC – TRIAC - UJT. Sessio Topics to be covered n No. 28 Dynamic Effects in MOS Capacitors and basic CCD
Text Book
Chapter No & Page No Chap-9 Page no: 444-447
Instruction Objective .
Program Outcome a) Graduates will demonstrate knowledge of mathematics, science and engineering.
29
Improvements on the Basic Structure and applications of CCD’s.
Chap-9 Page no: 447-449
a)Graduates will demonstrate knowledge of mathematics, science and engineering.
30
Tunnel Diodes
Chap-10 Page no: 486-490
a)Graduates will demonstrate knowledge of mathematics, science and engineering.
31
IMPATT Diode
32
Gunn Diode
33
PNPN Diode
34
SCR and IGBT
35
DIAC and TRIAC
36
UJT
Ben G. Streetman and Sanjay Kumar Banerjee. “Solid State Electronic Devices”,
Chap-10 Page no: 490-493
Chap-10 Page no: 494-500 Chap-11 Page no: 504-511
Robert L. Boylestad and Louis Nashelsky , “Electronic Devices and Circuit Theory”
1. To understand the working of PN junction diodes and special purpose diodes.
2. To understand the basic working physics of BJT and FET both in ideal and non-ideal conditions.
c) Graduates will demonstrate the ability to design and conduct experiments, analyze and interpret data. d) Graduates will demonstrate the ability to design a system, component or process as per needs and specifications c) Graduates will demonstrate the ability to design and conduct experiments, analyze and interpret data.
Chap-11 Page no: 511-518
c) Graduates will demonstrate the ability to design and conduct experiments, analyze and interpret data.
Chap-17 Page no: 845-848
c) Graduates will demonstrate the ability to design and conduct experiments, analyze and interpret data.
Chap-17 Page no: 848-851
c) Graduates will demonstrate the ability to design and conduct experiments, analyze and interpret data.
POWER SUPPLIES Half wave Rectification – Full wave Rectification – General filter consideration – Capacitor Filter – RC Filter – Discrete Transistor Voltage Regulation – IC Voltage Regulators – Practical Applications – SMPS. Sessi Topics to be covered on No. 37 Half wave Rectification
38
Text Book
Full wave Rectification Robert L. Boylestad and Louis Nashelsky , “Electronic Devices and Circuit Theory”
Chapter No & Page No Chap-2 Page no: 76-79
Chap-2 Page no: 79-82
39
General filter consideration
Chap-15 Page no: 774-775
40
Capacitor Filter and RC Filter
41
Discrete Transistor Voltage Regulation-series
Chap-15 Page no: 781-785
42
Discrete Transistor Voltage Regulation-shunt
Chap-15 Page no: 785-787
43
IC Voltage Regulators
44
SMPS
45
Practical Applications
Chap-15 Page no: 776-781
Chap-15 Page no: 788-792
S Salivahanan, N Suresh Kumar” Electron devices and Electronic Circuits” Robert L. Boylestad and Louis Nashelsky , “Electronic Devices and Circuit Theory”
Instruction Objective .
1. To understand the working of PN junction diodes and special purpose diodes.
2. To understand the basic working physics of BJT and FET both in ideal and non-ideal conditions.
Program Outcome
c) Graduates will demonstrate the ability to design and conduct experiments, analyze and interpret data. c) Graduates will demonstrate the ability to design and conduct experiments, analyze and interpret data. d) Graduates will demonstrate the ability to design a system, component or process as per needs and specifications d) Graduates will demonstrate the ability to design a system, component or process as per needs and specifications d) Graduates will demonstrate the ability to design a system, component or process as per needs and specifications d) Graduates will demonstrate the ability to design a system, component or process as per needs and specifications a) Graduates will demonstrate knowledge of mathematics, science and engineering.
Chap-11 Page no: 11.4111.49
a) Graduates will demonstrate knowledge of mathematics, science and engineering.
Chap-15 Page no: 793-795
a) Graduates will demonstrate knowledge of mathematics, science and engineering.