Tentative Course Syllabus

UNIVERSITY OF CALIFORNIA College of Engineering Department of Electrical Engineering and Computer Sciences EE 290D Fall 2013

Dr. Nuo Xu

Tentative Course Syllabus Week 1

Topics transistor and multiple-gate MOSFET’s development history review of MOSFET principles and performance metrics

2

issues in short-channel MOSFET electrostatics; scale length fundamentals for thin-body MOSFETs (FinFET, planar Fully-Depleted SOI MOSFET and Gate-All-Around MOSFET)

3

advantages of thin-body MOSFET’s electrostatics quantum mechanical effects; effective carrier mobility; high-field velocities

4

parasite resistance; thin-body MOSFET’s carrier transport MOSFET compact modeling and Technology CAD (TCAD)

5

impacts of substrate; fin shape tuning; gate stack process FinFET’s source/drain process multiple-gate MOSFET’s threshold voltage engineering

6

multiple-gate MOSFET performance dependence on channel orientation and strain

7

Strained-Si technology and its effectiveness on multiple-gate MOSFETs high-mobility channel transistors (Ge, III-V and GeSn)

8

MOSFET performance variability I: Random II: Systematic

9

other digital Figure-of-Merits (FoM) for MOSFETs multiple-gate MOSFET-based SRAM designs

10

industry state-of-the-art CMOS technology platforms Analog/RF Figure-of-Merits for MOSFETs

11

multiple-gate MOSFET Analog and RF performance multiple-gate MOSFET-based mixed-signal circuit designs

12

SoC potentials for multiple-gate MOSFETs 3-dimensional integrations

13

reliability issues (noise, breakdown and BTI) self-heating Effects electrostatic discharge (ESD)

14

course project presentations * S/TEM Source: Intel Corp.