TH1B-5 9:20 A MEMS Variable Capacitor with

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TH1B-5. 9:20. A MEMS Variable Capacitor with Piezoresistive Position Sensing Fabricated in a Standard 0.35um CMOS Process. N. Zahirovic1, R. R. Mansour1, ...
IMS 2010 Abstract Cards

TH1B: RF-MEMS Circuits Thursday 27 May 2010 Time 08:00 - 09:40 Room: 206AB Chair: Joachim Oberhammer, Royal Institute of Technology Co-Chair: Jing Wang, University of South Florida TH1B-5 9:20 A MEMS Variable Capacitor with Piezoresistive Position Sensing Fabricated in a Standard 0.35um CMOS Process N. Zahirovic1, R. R. Mansour1, M. Yu2, 1University of Waterloo, Waterloo, Canada, 2COM DEV International, Cambridge, Canada A variable MEMS capacitor with piezoresistive feedback is presented. The capacitor is fabricated in a commercial 0.35um CMOS process with MEMS post-processing. The work presented demonstrates a piezoresistive sensing scheme capable of controlling hysteresis effects in a CMOS-MEMS variable capacitor. Potential applications of the sensing scheme include closed-loop control of variable capacitors and detection of dielectic charging.