The 56th InternaTonal Conference on Electron, Ion, and Photon Beam Technology and NanofabricaTon Waikoloa, Hawaii, May 29 – June 1, 2012 CONFERENCE BACKGROUND
EIPBN — the ‘THREE-‐BEAMS’ conference — is recognized as the foremost internaSonal meeSng dedicated to lithographic sciences and process technologies using elecSon, ion or photon beams, with special emphasis on applicaSons for micro-‐ and nanofabrica4on techniques. The conference brings together engineers and scienSsts from all over the world to discuss recent progress and future trends.
MEETING FORMAT
The conference opens on Tuesday anernoon with a special commercial session featuring vendors of equipment and materials relevant to the conference. The technical program begins with a plenary session Wednesday morning. The regular symposia are presented in three parallel sessions. The length of the presentaSon and discussion is 30 minutes for invited papers and 20 minutes for contributed papers. A special feature of the technical program is the poster session that includes both invited and contributed papers. There is only one poster session but posters will be displayed for informal viewing throughout the enSre conference. Front cover micrograph is the Grand Prize Winner of the 2011 EIPBN MicroGraph contest submiWed by Joel Yang of IMRE. The micrograph is an SEM image of M.C. Escher’s 1948 Drop as “sketched” by e-‐beam lithography in such a way as to preserve the grayscale informaSon. Medium: HSQ on Si.
CONFERENCE REGISTRATION
We strongly encourage you to register on line by using our website www.eipbn.org . Early registraSon rates and special student rates are available. The online registraSon system will be open in the fall of 2011.
CONFERENCE LOCATION
The conference will be held at the Hilton Waikoloa Village on the lovely Big Island of Hawaii. This full service resort is on 62 acres along the Kohala coast about 20 minutes north of the Kona InternaSonal Airport. Hilton Waikoloa Village 69-‐425 Waikoloa Beach Drive Waikoloa, Hawaii 96738 Phone: (808) 886-‐1234 Fax: (808) 886-‐2900
Photo courtesy Hilton Waikoloa Village
TECHNICAL SCOPE
Abstracts represenSng high-‐quality original research are invited in the following areas: Micro-‐ and Nanolithography • Electron-‐beam lithography • Ion-‐beam paWerning • OpScal lithography • Nano-‐imprint lithography • Extreme UV lithography • Mask and Maskless lithography • Directed self-‐assembly • Novel or emerging lithographic techniques • Highly Regular Lithography Process Technologies • Electron or ion beam technologies • Metrology and imaging • Resists • PaWern transfer • Process simulaSon and modeling • Novel beam-‐based processing Applica4ons • Nanoelectronics • PaWerned media and data storage • Nanophotonics • Nanobiology • Micro-‐ and nano-‐fluidics • Novel or emerging applicaSons • Carbon-‐based nanodevices (CNTs&Graphene) • 3DIC-‐enabled Nanodevices & Nanotechnology • Nanostructured Organic Solar Cells
Detection of bridge defect in 88-nm hp LS patterns was simulated. 3-nm-thick bridge defect was identified by using projection electron beams with landing energy of 0, 5, 250 and 1000 eV. And heights of the defects were identified by controlling the incident beam energy. P06-04
Image Compensation of Mask Misalignment in Aerial Image Microscope System, Min-Chul Park, Young Min Jhon and Yong Tae Kim, KIST (Korea Institute of Science and Technology) In this paper we propose a method of image compensation for mask misalignment to obtain a corrected phase difference.We developed an image processing software to compensate the differences, and they can be compensated by changing the measured phase difference until to observe the same phase difference between the light intensities.
P06-05
Modeling of defect transport in EUVL plasma chambers, Alex Likhanskii, Chuandong Zhou, Peter Stoltz, Vibhu Jindal*, Patrick Kearney*, Arun John*, Tech-X Corporation, *SEMATECH We will present the results of detailed modeling of defect transport in EUVL plasma chambers using Tech-X's code plasma VORPAL. We will describe the physics of the defect transport from target to the mask and will discuss potential ways to reduce number of defects, hitting the mask.
P06-06
Direct nano-structuring of solid surface by extreme ultraviolet Ar8+ laser, Karel Kolacek, Jaroslav Straus, Jiri Schmidt, Olexandr Frolov, Vaclav Prukner, Radek Melich, Andrei Choukourov*, Jaroslav Sobota** and Tomas Fort**, IPP AS CR, *MFF UK, **ISI AS CR It is described not only the interaction of extreme ultraviolet radiation of various fluences with solid surface (the desorption regime as well as the ablation one can be distinguished), but also a nano-structuring of this surface digging out by this radiation 2D diffraction pattern created in windows of covering grid.
P06-07
Understanding the sources of unwanted etch in ion beam sputter deposition production of EUV mask blanks, Patrick Kearney, Vibhu Jindal, Alin Antohe, Frank Goodwin, Al Weaver, Pat Teora, John Sporre, David Ruzic, Peter Stoltz, Alex Likhanskii and Chuandong Zhou EUV lithography requires defect free masks. Defects in these IBSD masks are caused by beam interactions with the chamber shielding. We have investigated and optimized the ion beam using etch plates, pinhole camera imaging, and a retarding field analyzer. Simulations including charge exchange have been performed to explain the results.
Focused Ion Beams
P07-01
Focused Ion Beam Implantation of Li+ in WO3 Using A
Image Compensation of Mask Misalignment in Aerial Image Microscope System Min-Chul Park National Agenda Research Division, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul. Korea 136-791
[email protected] Young Min Jhon National Agenda Research Division, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul. Korea 136-791 Yong Tae Kim Semiconductor Materials and Devices Laboratory, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul. Korea 136-791 Thanks to the very short wavelength of 13.5 nm, EUV lithography (EUVL) makes it possible to realize structures on computer chips that are considerably smaller than 20 nm. EUV technology places highest demands on the positioning accuracy and stability of the mirrors. During wafer exposure, the mirrors must be held in position with sub nm and sub nrad accuracy. To meet these enormous requirements a highly stabile support structure featuring a very high natural frequency has been developed as well as specifically designed positioning systems.1 Aerial image measuring system (AIMS) is used for a defect review of EUV photomasks. An aerial image is a projected image "floating in air", and can only be seen from one position in space, often focused by another lens. The inverse Fourier transform is performed on the focused aerial image to find the timedomain representation from the frequency domain. In this paper we propose a method of image compensation for mask misalignment to obtain a corrected phase difference. Figure 1 shows patterns of misalignment between the camera and the mask. x and y describes the angle each x and y axis. The misalignment by camera or mask rotation is assumed to cause changes in the phase differences. Figure 2 represents several patterns of aerial images simulated by changing camera positions around x and y axis in 3D space, and the measured phase differene. Figure 3 shows graphed phase difference measured from the images in Figure 2. Rotation around y axis merely affects the phase difference in our simulation, but rotation around x axis is supposed to induce the phase differences. We developed image processing software to compensate the differences, and they can be compensated by changing the measured phase difference until to observe the same phase difference between the light intensities. 1
W. Kaiser and P. Kurerz, “EUVL,” No 2, pp.35-38, Optik & Photonik, June 2008
Figure 1: Case of Misalignment between camera and mask in AIMS(Aerial Image Measuring System): Axes of mirrors, mask and camera position causes misalignment..
(a) (b) Figure 2: Examples of Misalignment and measured phase difference. : (a) shows tilted and/or panned images. (b) presents the measured phase differences.
Figure 3: Phase difference obtained from the simulated images by changing the camera position around x and y axis in 3-D space.
Acknowledgement This work was supported by the IT R&D program of MKE/KEIT. [10039226 , Development of actinic EUV mask inspection tool and multiple electron beam wafer inspection technology]
