Mar 13, 2016 - This content has been downloaded from IOPscience. Please scroll down to see the full text. Download details: IP Address: 78.128.176.124.
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The Effect of Mesh Bias and Substrate Bias on the Properties of a-Si:H Deposited by Triode Plasma Chemical Vapour Deposition
This content has been downloaded from IOPscience. Please scroll down to see the full text. 1994 Jpn. J. Appl. Phys. 33 5663 (http://iopscience.iop.org/1347-4065/33/10R/5663) View the table of contents for this issue, or go to the journal homepage for more
Download details: IP Address: 78.128.176.124 This content was downloaded on 13/03/2016 at 23:15
