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a true e-mode mhemt with high static and dynamic ... - IEEE Xplore

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[email protected]. Abstract: A high DC and RF performance, fully passivated, true Enhancement-mode 100nm. MHEMT is demonstrated. This transistor is a ...

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A TRUE E-MODE MHEMT WITH HIGH STATIC AND DYNAMIC PERFORMANCES H. Maher, P. Baudet, I. El Makoudi, M-G Périchaud, J. Bellaiche, M. Renvoisé, U. Rouchy, P. Frijlink

OMMIC/PHILIPS, 22 Av Descartes BP11 94453 Limeil-Brévannes Cedex France [email protected] Abstract: A high DC and RF performance, fully passivated, true Enhancement-mode 100nm MHEMT is demonstrated. This transistor is a good candidate for high performance low noise and low power consumption applications. DEc~ 0.52 eV [2]. Moreover, the small SBH of the In0.52Al0.48As drastically affects the gate leakage current and consequently the gate voltage swing of the device. In this paper we present the results of an In0.4Al0.6As/In0.4Ga0.6As/In0.4Al0.6As EMHEMT with an SBH in excess of 1 eV and a DEc~0.65 eV. Using such a structure it is possible to achieve a positive pinch-off voltage above 0.2V and a wide gate voltage swing, which is not the case for an InPHEMT where we cannot increase the gate voltage over 0.5 V while keeping Ig