CB-Radio Component Database

Component Database Components for CB-Radios and transmitter/receiver equipment

RF Bipolar Small Signal Transistor RF FET Small Signal Transistor RF Power Transistor Shortform Transistor Catalogue Integrated Circuits Variable capacitance diode Albrecht Radio Equipment Scanner Documentation

President CB-Radio Modification Technical Documentation for Radio Equipment LINK`S NTE Electronics Inc, Electronic Cross Reference Database ECG Cross Reference Fujitsu Semiconductor Hewlett-Packard Semiconductor KTC Semiconductor (Corea) Motorola RF-Components National Semiconductor NEC Semiconductor New Japan Radio Co., Ltd. Nippon Precision Circuits Philips Components ST Komponenter Sanyo Semiconductor Siemens Semiconductor Texas Instruments Semiconductor Toshiba Components Toshiba Semiconductor - PDF

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RF Bipolar Small Signal Transistor

RF Bipolar Transistor Transistor Type

Max. Vce

Max. Ie

Max. Diss.

hfe / Gain

Max. Freq.

Noise Figure

Case

Pin 123

2N918

NPN

15V

50mA

350mW

15dB@ 200MHz

600MHz

6dB @ 60MHz

TO-72

2N2857

NPN

15V

40mA

200mW

12,5dB@ 450MHz

1,6GHz

4,5dB @ 450MHz

TO-72

2N3663

NPN

12V

30mA

350mW

1,5dB@ 200MHz

700MHz

6,5dB @ 60MHz

TO-92

BCE

2N3904

NPN

40V

200mA

625mW

300MHz

5dB @ 15,7kHz

TO-92

EBC

2N4124

NPN

25V

200mA

350mW

120

300MHz

5dB@ 15,7kHz

TO-92

EBC

2N4957

PNP

30V

30mA

200mW

17dB@ 450MHz

1,6GHz

3dB @ 450MHz

TO-72

2N5031

NPN

10V

20mA

200mW

14dB@ 450MHz

1,6GHz

2,5dB @ 450MHz

TO-72

2N5179

NPN

10V

50mA

200mW

15dB@ 200MHz

1,4GHz

4,5dB @ 200MHz

TO-72

EBC

2N5770

NPN

15V

50mA

350mW

15dB@ 200MHz

2N6304

NPN

15V

50mA

200mW

15dB@ 450MHz

2SC372

NPN

60V

150mA

400mW

2SC380

NPN

30V

50mA

300mW

2SC383

NPN

45V

50mA

2SC388

NPN

25V

50mA

2SC394

NPN

25

100mA

2SC454

NPN

30V

100mA

200mW

2SC458

NPN

30V

100mA

200mW

2SC460

NPN

30V

100mA

200mW

29dB@ 10,7MHz

230MHz

2SC461

NPN

30V

100mA

200mW

17dB@ 100MHz

230MHz

2SC535

NPN

30V

20mA

100mW

20dB@ 100MHz

450MHz

2SC536

NPN

40V

100mA

2SC710

NPN

30V

30mA

2SC711

NPN

50V

30mA

2SC784

NPN

40V

20mA

2SC829

NPN

45V

50mA

250mW

2SC941

NPN

30V

100mA

400mW

2SC945

NPN

60V

100mA

250mW

2SC1009

NPN

20V

50mA

150mW

100

250MHz

2dB @ 1MHz

SOT-23

2SC1047

NPN

20V

20mA

400mW

20dB@ 100MHz

450MHz

3,3dB@ 100MHz

TO-92

ECB

2SC1342

NPN

20V

30mA

100mW

17dB@ 100MHz

320MHz

5,5dB @ 100MHz

TO-92

ECB

1,8GHz

6dB @ 60MHz

TO-92

4,5dB @ 450MHz

TO-72

EBC

200MHz

TO-92

29dB@ 10,7MHz

100MHz

TO-92

ECB

300mW

33dB@ 45MHz

300MHz

TO-92

ECB

300mW

33dB@ 45MHz

300MHz

TO-92

ECB

200MHz

TO-92

230MHz

TO-92

ECB

230MHz

TO-92

ECB

TO-92

ECB

TO-92

ECB

TO-92

ECB

180MHz

TO-92

ECB

200mW

200MHz

TO-92

200mW

200MHz

TO-92

500MHz

TO-92

ECB

70

230MHz

TO-92

ECB

50

120MHz

TO-92

ECB

TO-92

ECB

35dB@ 455kHz

5dB @ 1Mhz

3,5dB@ 100MHz

3,5dB@ 1MHz

250MHz

2SC1674

NPN

30V

25mA

250mW

18dB@ 100MHz

600MHz

5dB@ 100MHz

TO-92

ECB

2SC1675

NPN

30V

30mA

250mW

40

150MHz

4dB @ 1MHz

TO-92

ECB

2SC1730

NPN

30V

50mA

250mW

2SC1815

NPN

40V

100mA

300mW

2SC1856

NPN

20V

20mA

250mW

2SC1906

NPN

20V

50mA

300mW

2SC1907

NPN

20V

50mA

2SC1923

NPN

30V

20mA

2SC2026

NPN

15V

50mA

2SC2037

NPN

15V

50mA

2SC2120

NPN

30V

800mA

600mW

100

120MHz

TO-92

ECB

2SC2216

NPN

45V

50mA

300mW

29dB@ 45MHz

300MHz

TO-92

BEC

2SC2347

NPN

15V

50mA

250mW

20

650MHz

TO-92

ECB

2SC2349

NPN

15V

50mA

250mW

600MHz

TO-92

ECB

2SC2407

NPN

35V

150mA

600mW

500MHz

TO-92

2SC2471

NPN

30V

50mA

310mW

20

2GHz

TO-92

ECB

2SC2498

NPN

20V

50mA

300mW

80

3,5GHz

2,5dB @ 500MHz

TO-92

BEC

2SC2512

NPN

20V

50mA

300mW

20dB@ 200MHz

900MHz

3,8dB @ 200MHz

TO-92

BEC

2SC2644

NPN

12V

120mA

500mW

18dB@ 100MHz

4GHz

2dB@ 100MHz

TO-92

BEC

2SC2668

NPN

30V

20mA

100mW

18dB@ 100MHz

550MHz

2,5dB@ 100MHz

MINI

ECB

2SC2669

NPN

30V

50mA

200mW

30dB@ 10,7MHz

100MHz

MINI

ECB

2SC2717

NPN

25V

50mA

300mW

28dB@ 45MHz

300MHz

TO-92

BEC

2SC2724

NPN

30V

25mA

250mW

600MHz

TO-92

ECB

1,1GHz 70

200MHz

TO-92 1dB@ 1kHz

TO-92

ECB

200MHz

TO-92

33dB@ 45MHz

1GHz

TO-92

ECB

300mW

40

1,1GHz

TO-92

ECB

100mW

18dB@ 100MHz

550MHz

TO-92

ECB

TO-92

BEC

2,5dB@ 100MHz

2.2GHz

TO-92

2SC2753

NPN

12V

70mA

300mW

27dB@ 100MHz

5GHz

1,7dB@ 100MHz

TO-92

BEC

2SC2786

NPN

20V

20mA

250mW

22dB@ 100MHz

600MHz

3dB@ 100MHz

MINI

ECB

2SC2787

NPN

30V

30mA

250mW

90

250MHz

2dB @ 1MHz

MINI

ECB

2SC2814

NPN

20V

30mA

150mW

25dB@ 100MHz

200MHz

3dB@ 100MHz

SOT-23

2SC2839

NPN

20V

30mA

150mW

25dB@ 100MHz

200MHz

3dB@ 100MHz

MINI

2SC2996

NPN

30V

50mA

150mW

15dB@ 100MHz

100MHz

4dB@ 150

SOT-23

2SC2999

NPN

20V

30mA

150mW

28dB@ 100MHz

450MHz

2,2dB@ 100MHz

MINI

ECB

2SC3000

NPN

20V

30mA

250mW

25dB@ 100MHz

200MHz

3dB@ 100MHz

TO-92

ECB

2SC3011

NPN

7V

30mA

150mW

27dB@ 100MHz

6,5MHz

2,3dB @ 1GHz

SOT-23

2SC3099

NPN

20V

30mA

150mW

24dB@ 100MHz

4GHz

1,7dB @ 100MHz

SOT-23

2SC3127

NPN

12V

50mA

150mW

10,5dB@ 900MHz

4,5GHz

2,2dB@ 900MHz

SOT-23

2SC3128

NPN

12V

50mA

350mW

10,5dB@ 900MHz

4,5GHz

2,2dB@ 900MHz

TO-92

2SC3142

NPN

20V

30mA

150mW

28dB@ 100MHz

450MHz

2,2dB@ 100MHz

SOT-23

2SC3195

NPN

30V

20mA

100mW

2SC3355

NPN

12V

100mA

600mW

9,5dB@ 1GHz

6,5GHz

2SC3356

NPN

12V

100mA

200mW

11dB@ 1GHz

2SC3429

NPN

12V

70mA

150mW

2SC3510

NPN

12V

50mA

2SC3512

NPN

10V

2SC3582

NPN

2SC3605 2SC3606

550MHz

ECB

BEC

MINI

ECB

1,1dB@ 1GHz

TO-92

BEC

7GHz

1,1dB @ 1GHz

SOT-23

28dB@ 100MHz

5GHz

1,7dB @ 100MHz

SOT-23

600mW

10,5dB@ 900MHz

4,5GHz

2,2dB@ 900MHz

TO-92

BEC

50mA

600mW

10,5dB@ 900MHz

6GHz

1,6dB@ 900MHz

TO-92

BEC

10V

65mA

600mW

13dB@ 1GHz

8GHz

1,2dB@ 1GHz

TO-92

BEC

NPN

12V

80mA

600mW

27dB@ 100MHz

6,5GHz

1,1dB@ 100MHz

TO-92

BEC

NPN

12V

80mA

150mW

28dB@ 100MHz

5GHz

1dB @ 500MHz

SOT-23

2SC3663

NPN

12V

50mA

350mW

15dB@ 200MHz

6dB @ 60MHz

TO-92

2SC4173

NPN

30V

50mA

150mW

100

250MHz

2dB@ 1MHz

SOT-23

2SC4308

NPN

20V

300mA

600mW

50

2,5GHz

2SC4317

NPN

10V

40mA

150mW

28dB@ 100MHz

7GHz

1dB @ 1GHz

SOT-23

2SC4321

NPN

10V

40mA

150mW

28dB@ 100MHz

7GHz

1dB @ 1GHz

SOT-23

2SC4322

NPN

10V

15mA

150mW

24dB@ 100MHz

7GHz

1,4dB @ 1GHz

SOT-23

2SC4399

NPN

20V

30mA

150mW

25dB@ 100MHz

200MHz

3dB @ 100MHz

SOT-23

2SC4433

NPN

18V

50mA

300mW

26dB@ 100MHz

750MHz

2SC4628

NPN

20V

20mA

200mW

10dB@ 800MHz

1GHz

2SC4629

NPN

9V

50mA

600mW

11,5dB@ 900MHz

2SC4874

NPN

12V

50mA

600mW

2SC4875

NPN

9V

50mA

2SC5064

NPN

12V

2SC5084

NPN

2SC5085

TO-92

EBC

BEC

MINI

ECB

7dB @ 100MHz

TO-92

ECB

8GHz

1,2dB @ 900MHz

TO-92

ECB

10dB@ 900MHz

5,8GHz

1,8dB @ 900MHz

TO-92

ECB

450mW

11,5dB@ 900MHz

8,5GHz

1,3dB @ 900MHz

TO-92

ECB

30mA

150mW

24dB@ 100MHz

5GHz

1dB @ 500MHz

SOT-23

12V

80mA

150mW

26dB@ 100MHz

5GHz

1dB @ 500MHz

SOT-23

NPN

12V

80mA

150mW

16,5dB@ 500MHz

5GHz

1dB @ 500MHz

SOT-23

2SC5089

NPN

10V

40mA

150mW

28dB@ 100MHz

7GHz

1,1dB @ 1GHz

SOT-23

2SC5094

NPN

10V

15mA

150mW

23dB@ 100MHz

7GHz

1,4dB @ 1GHz

SOT-23

2SC5106

NPN

10V

30mA

150mW

21dB@ 100MHz

4GHz

SOT-23

2SC5109

NPN

10V

60mA

150mW

21dB@ 100MHz

3GHz

SOT-23

2SC5254

NPN

7V

40mA

150mW

28dB@ 100MHz

9GHz

1,1dB @ 1GHz

SOT-23

2SC5259

NPN

7V

15mA

150mW

22dB@ 100MHz

9GHz

1,3dB @ 1GHz

SOT-23

2SC5570

NPN

15V

50mA

350mW

1,5dB@ 200MHz

700MHz

6,5dB @ 60MHz

TO-92

EBC

2SK380

NPN

30V

50mA

300mW

400MHz

2SK1923

NPN

30V

20mA

100mW

550MHz

BF115

NPN

30V

25mA

125mW

45

250MHz

TO-72

BF167

NPN

30V

25mA

125mW

26

350MHz

TO-92

BF173

NPN

25V

25mA

200mW

40

700MHz

BF180

NPN

20V

20mA

150mW

15

675MHz

TO-72

BF184

NPN

20V

30mA

150mW

75

300MHz

TO-72

BF185

NPN

20V

30mA

150mW

35

220MHz

TO-72

BF198

NPN

30V

25mA

500mW

BF199

NPN

25V

25mA

300mW

BF200

NPN

20V

20mA

BF224

NPN

30V

BF240

NPN

BF241

2,5dB@ 100MHz

2,6dB @ 36MHz

TO-92

ECB

TO-92

ECB

TO-72

BEC*

400MHz

3dB @

TO-92

40

550MHz

6dB @ 45MHz

TO-92

150mW

15

650MHz

TO-72

50mA

250mW

30

450MHz

TO-92

CEB

40V

25mA

300mW

67

150MHz

TO-92

CEB

NPN

40V

25mA

TO-92

CEB

BF254

NPN

20V

30mA

200mW

200MHz

TO-92

BF255

NPN

20V

30mA

300mW

200MHz

TO-92

BF314

NPN

30V

25mA

300mW

30

600MHz

BF324

PNP

30V

25mA

300mW

25

450MHz

TO-92

CBE

BF370

NPN

15V

200mA

500mW

40

500MHz

TO-92

CBE

BF414

NPN

30V

25mA

300mW

80

400MHz

3dB@ 100MHz

TO-92

EBC

BF494

NPN

20V

30mA

300mW

67

120MHz

4dB@

TO-92

CEB

BF495

NPN

20V

30mA

300mW

35

120MHz

4dB@

TO-92

CEB

BF496

NPN

20V

20mA

300mW

30dB@ 100MHz

550MHz

2,5dB @ 200Mhz

TO-92

4dB@ 60MHz

2dB @ 200MHz

CEB

CEB

CBE

BF506

PNP

35V

30mA

300mW

17,5dB@ 200MHz

300MHz

3dB @ 200Mhz

TO-92

BF689K

NPN

15V

25mA

360mW

16dB@ 200MHz

1,8GHz

3dB @ 200Mhz

TO-92

BF748

NPN

20V

50mA

500mW

20dB@ 100MHz

1,2GHz

4,5dB @ 100Mhz

TO-92

BF751

NPN

14V

35mA

600mW

11dB@ 1000MHz

6,5GHz

2,7dB @ 1000Mhz

TO-92

BF763

NPN

15V

25mA

360mW

13dB@ 800MHz

1,8GHz

BF775

NPN

15V

30mA

280mW

15dB@ 900MHz

5GHz

1,8dB @ 900MHz

SOT-23

BF799W

NPN

20V

35mA

280mW

800MHz

3dB @ 100MHz

SOT-23

BF840

NPN

40V

25mA

280mW

65

380MHz

1,7dB@ 100kHz

SOT-23

BF926

NPN

20V

25mA

250mW

17,5dB@ 200MHz

350MHz

5dB @ 200Mhz

TO-92

BF959

NPN

20V

100mA

500mW

40

600MHz

3dB@ 200MHz

TO-92

BFR90

NPN

15V

30mA

300mW

19,5dB@ 500MHz

5GHz

2,2dB @ 500MHz

SOT-37

BFR90A

NPN

15V

30mA

300mW

16dB@ 800MHz

6GHz

2,8dB @ 800MHz

SOT-37

BFR91

NPN

12V

50mA

300mW

18dB@ 500MHz

5GHz

1,9dB @ 500MHz

SOT-37

BFR91A

NPN

12V

50mA

300mW

14dB@ 800MHz

6GHz

1,6dB @ 800MHz

SOT-37

BFR92

NPN

15V

30mA

200mW

19,5dB@ 500MHz

5GHz

2,2dB @ 500MHz

SOT-23

BFR92A

NPN

15V

30mA

200mW

16dB@ 800MHz

6GHz

1,8dB @ 800MHz

SOT-23

BFR92L

NPN

15V

35mA

350mW

BFR93

NPN

12V

40mA

200mW

18dB@ 500MHz

5GHz

1,9dB@ 500MHz

SOT-23

BFR93A

NPN

12V

40mA

200mW

14dB@ 800MHz

6GHz

1,6dB@ 800MHz

SOT-23

BFR93L

NPN

12V

35mA

350mW

3GHz

2,5dB@ 30MHz

SOT-23

BFR96

NPN

15V

100mA

500mW

14,5dB@ 500MHz

4,5GHz

2dB @ 500MHz

SOT-37

BFR96T

NPN

15V

75mA

500mW

16dB@ 500MHz

5GHz

2,3dB@ 500MHz

SOT-23

TO-92

3,4GHz

SOT-23

EBC

BFR96TS

NPN

15V

100mA

700mW

11,5dB@ 800MHz

5GHz

3,3dB@ 500MHz

SOT-23

BFR520

NPN

15V

70mA

300mW

60

9GHz

1,1dB@ 900MHz

SOT-23

BFY90

NPN

15V

50mA

200mW

21dB@ 200MHz

1,7GHz

2,5dB @ 200MHz

TO-72

EBC*

KTC3194

NPN

30V

20mA

625mW

18dB@ 100MHz

550MHz

2,5dB@ 100MHz

MINI

ECB

KTC3195

NPN

30V

20mA

400mW

18dB@ 100MHz

550MHz

2,5dB@ 100MHz

MINI

ECB

KTC3880

NPN

30V

20mA

150mW

18dB@ 100MHz

550MHz

2,5dB@ 100MHz

SOT-23

MPS536

PNP

10V

30mA

625mW

14dB@ 500MHz

5GHz

4,5dB @ 500MHz

TO-92

MPS571

NPN

10V

80mA

625mW

14dB@ 500MHz

5GHz

2dB @ 500MHz

TO-92

MPS901

NPN

15V

30mA

625mW

12dB@ 900MHz

5GHz

2,5dB @ 900MHz

TO-92

MPS911

NPN

12V

40mA

625mW

16,5dB @ 500MHz

7GHz

1,7dB @ 500MHz

TO-92

MPS3866

NPN

30V

400mA

625mW

10dB@ 400MHz

800MHz

* = Shield lead connected to case


TO-92

Component Database Components for CB-Radios and transmitter/receiver equipment

RF Bipolar Small Signal Transistor RF FET Small Signal Transistor RF Power Transistor Shortform Transistor Catalogue Integrated Circuits Variable capacitance diode Albrecht Radio Equipment Scanner Documentation

President CB-Radio Modification Technical Documentation for Radio Equipment LINK`S NTE Electronics Inc, Electronic Cross Reference Database ECG Cross Reference Fujitsu Semiconductor Hewlett-Packard Semiconductor KTC Semiconductor (Corea) Motorola RF-Components National Semiconductor NEC Semiconductor New Japan Radio Co., Ltd. Nippon Precision Circuits Philips Components ST Komponenter Sanyo Semiconductor Siemens Semiconductor Texas Instruments Semiconductor Toshiba Components Toshiba Semiconductor - PDF

Search www.dxzone.com Amateur Radio Search Engine


RF FET Small Signal Transistor

FET Transistor Transistor

Type

Max. Vds

Max. Id

Max. Diss.

Gain

Max. Freq.

Noise Figure

Case

Pin 1234

2N3819

N-CH J-FET

25V

10mA

350mW

3dB @ 400MHz

TO-92

SGD

2N4416

N-CH J-FET

30V

15mA

300mW

18dB @ 100MHz

450MHz

2dB @ 100MHz

TO-72

SDG*

2N4416A

N-CH J-FET

35V

15mA

300mW

18dB @ 100MHz

400MHz

2dB @ 100MHz

TO-72

SDG*

2N5245

N-CH J-FET

30V

18mA

360mW

TO-92

2N5248

N-CH J-FET

30V

20mA

200mW

TO-92

SGD

2N5484

N-CH J-FET

25V

5mA

310mW

16dB @ 100MHz

200MHz

3dB @ 100MHz

TO-92

DSG

2N5485

N-CH J-FET

25V

10mA

310mW

18dB @ 100MHz

400MHz

2dB @ 100MHz

TO-92

DSG

2N5486

N-CH J-FET

25V

20mA

350mW

18dB @ 100MHz

400MHz

2dB @ 100MHz

TO-92

DSG

2N5668

N-CH J-FET

25V

5mA

360mW

400MHz

2,5dB @ 100MHz

TO-92

2N5669

N-CH J-FET

25V

10mA

360mW

400MHz

2,5dB @ 100MHz

TO-92

2N5670

N-CH J-FET

25V

20mA

360mW

400MHz

2,5dB @ 100MHz

TO-92

2SK19

N-CH J-FET

18V

10mA

200mW

2SK44

N-CH J-FET

MINI

2SK49

N-CH J-FET

TO92

2SK125

N-CH J-FET

25V

30mA

200mW

2SK161

N-CH J-FET

18V

10mA

200mW

2SK192

N-CH J-FET

18V

10mA

2SK241

N-CH J-FET

20V

2SK544

N-CH J-FET

2SK709

TO-92

DSG

1,5dB @ 100MHz

TO-92

18dB @ 100MHz

2,5dB @ 100MHz

MINI

DSG

200mW

24dB @ 100MHz

1,8dB @ 100MHz

MINI

DSG

30mA

200mW

28dB @ 100MHz

1,7dB @ 100MHz

MINI

DSG

20V

30mA

300mW

27dB @ 100MHz

1,8dB @ 100MHz

N-CH J-FET

20V

10mA

300mW

TO-92

DSG

2SK710

N-CH J-FET

20V

10mA

200mW

MINI

DGS

3N200

N-CH Dual Gate MOSFET

20V

50mA

330mW

3N201


25V

50mA

3N202


25V

50mA

3N204


3N211


3N212


500MHz

4,5dB @ 400MHz

DSG

TO-72 TO-72

360mW

200MHz

4,5dB @ 200MHz

TO-72 TO-72

25V

50mA

360mW

TO-72 TO-72

3N213


3SK39


20V

25mA

3SK40


15V

25mA

3SK45


TO-72

3SK48


TO-72

3SK51


20V

35mA

TO-72

3SK59


20V

35mA

TO-72

3SK72


3SK73


20V

3mA

3SK74


20V

7mA

3SK75


3SK81


3SK88


3SK97


3SK126


3SK173


3SK180


TO-72 TO-72 250mW

TO-72

TO-72 TO-72 200mW

SOT-37 TO-72

20V

5mA SOT-37

15V

30mA

150mW

25dB@ 200MHz

1,4dB@ 200MHz

SOT-143

SDGG

TO-72 15V

30mA

200mW

28dB@ 100MHz

1,8dB@ 100MHz

SOT-143

SDGG

3SK198


13V

50mA

200mW

19dB@ 800MHz

1,2dB@ 800MHz

SOT-143

SDGG

3SK199


13,5V

30mA

150mW

19,5dB@ 800MHz

1,9dB@ 800MHz

SOT-143

SDGG

3SK207


13,5V

30mA

150mW

19,5dB@ 800MHz

1,9dB@ 800MHz

SOT-143

SDGG

3SK225


13,5V

30mA

150mW

22dB@ 500MHz

2dB@ 500MHz

SOT-143

SDGG

3SK226


13,5V

30mA

150mW

27dB@ 200MHz

1,1dB@ 200MHz

SOT-143

SDGG

3SK232


13,5V

30mA

150mW

20dB@ 800MHz

1,5dB@ 800MHz

SOT-143

SDGG

3SK240


9V

1mA

150mW

20,5dB@ 800MHz

1dB@ 800MHz

SOT-143

SDGG

3SK249


12,5V

30mA

150mW

20dB@ 800MHz

1,5dB@ 800MHz

SOT-143

SDGG

3SK256


13,5V

30mA

150mW

19,5dB@ 800MHz

1,9dB@ 800MHz

SOT-143

SDGG

3SK257


13,5V

30mA

100mW

22dB@ 800MHz

2dB@ 800MHz

SOT-143

SDGG

3SK259


13,5V

30mA

100mW

19dB@ 800MHz

2,6dB@ 800MHz

SOT-143

SDGG

3SK260


13,5V

30mA

100mW

24,5dB@ 200MHz

3,3dB@ 200MHz

SOT-143

SDGG

3SK263


15V

30mA

200mW

21dB@ 200MHz

1,1dB@ 200MHz

SOT-143

SDGG

3SK264


15V

30mA

200mW

23dB@ 200MHz

1,1dB@ 200MHz

SOT-143

SDGG

3SK265


15V

30mA

200mW

26dB@ 200MHz

1,1dB@ 200MHz

SOT-143

SDGG

3SK274


9V

1mA

100mW

20,5dB@ 800MHz

1dB@ 800MHz

SOT-143

SDGG

3SK291


12,5V

30mA

150mW

22,5dB@ 800MHz

1,5dB@ 800MHz

SOT-143

SDGG

3SK292


12,5V

30mA

150mW

26dB@ 500MHz

1,4dB@ 500MHz

SOT-143

SDGG

3SK293


12,5V

30mA

100mW

22,5dB@ 500MHz

1,5dB@ 500MHz

SOT-143

SDGG

3SK294


12,5V

30mA

100mW

26dB@ 500MHz

1,4dB@ 500MHz

SOT-143

SDGG

3SK320


6V

1mA

100mW

15dB@ 2GHz

1,4dB@ 2GHz

SOT-143

SDGG

40673


20V

50mA

330mW

6dB @ 200MHz

TO-72

40823


20V

50mA

40841


20V

50mA

BF244

N-CH J-FET

30V

50mA

500mW

BF245A

N-CH J-FET

30V

6,5mA

300mW

700MHz

1,5dB @ 100MHz

TO-92

DSG

BF245B

N-CH J-FET

30V

615mA

300mW

700MHz

1,5dB @ 100MHz

TO-92

DSG

BF245C

N-CH J-FET

30V

25mA

300mW

700MHz

1,5dB @ 100MHz

TO-92

DSG

BF256

N-CH J-FET

30V

10mA

300mW

1GHz

TO-92

GSD

BF410A

N-CH J-FET

20V

30mA

300mW

1,5dB @ 100MHz

TO-92

GSD

BF410B

N-CH J-FET

20V

30mA

300mW

1,5dB @ 100MHz

TO-92

GSD

BF410C

N-CH J-FET

20V

30mA

300mW

1,5dB @ 100MHz

TO-92

GSD

BF410D

N-CH J-FET

20V

30mA

300mW

1,5dB @ 100MHz

TO-92

GSD

BF543

N-CH MOS-FET

20V

30mA

200mW

1dB @ 200MHz

SOT-23

BF900


400MHz

TO-72 14dB @ 50MHz

3dB @ 50MHz

TO-72 TO-92

22dB@ 200MHz

300MHz

SOT-37

BF905


BF907


BF908WR


12V

40mA

300mW

BF910


20V

50mA

300mW

BF960


20V

20mA

225mW

BF961


20V

30mA

200mW

20dB@ 200MHz

2GHz

1,8dB@ 200MHz

TO-50

DSGG

BF964S


20V

30mA

200mW

25dB@ 200MHz

2GHz

1dB@ 200MHz

TO-50

DSGG

BF966S


20V

30mA

200mW

25dB@ 200MHz

2GHz

1dB@ 200MHz

TO-50

DSGG

BF981


20V

20mA

BF982


20V

40mA

200MHz

BF988


12V

30mA

800MHz

BF989


20V

20mA

200mW

1,6dB @ 200MHz

SOT-143

BF990A


18V

30mA

200mW

2dB@ 800MHz

SOT-143

BF991


20V

30mA

200mW

0,7dB@ 100MHz

SOT-143

BF992


20V

40mA

200mW

1,2dB@ 200MHz

SOT-143

BF994


20V

30mA

200mW

25dB@ 200MHz

1dB@ 200MHz

SOT-143

BF994S


20V

30mA

200mW

25dB@ 200MHz

1dB@ 200MHz

SOT-143

0,6dB @ 200MHz

800MHz

29dB@ 100MHz

2GHz

SOT-143

SOT-37

SDGG

BF995


20V

30mA

200mW

20dB@ 200MHz

1,8dB@ 200MHz

SOT-143

BF996


20V

30mA

200mW

25dB@ 200MHz

1dB@ 200MHz

SOT-143

BF996S


20V

30mA

200mW

25dB@ 200MHz

2GHz

1dB@ 200MHz

SOT-143

BF997


20V

30mA

200mW

25dB@ 200MHz

1GHz

1dB@ 200MHz

SOT-143

BF961


20V

30mA

200mW

28dB@ 200MHz

2GHz

1dB@ 200MHz

SOT-143

BF543

N-CH MOS-FET

20V

30mA

200mW

25dB@ 200MHz

300MHz

1dB @ 200MHz

SOT-23

BF1100


14V

30mA

280mW

2dB@ 800MHz

SOT-143

MFE201


MPF102

N-CH J-FET

25V

20mA

310mW

200MHz

4dB @ 400MHz

TO-92

MPF106

N-CH J-FET

25V

30mA

310mW

400MHz

4dB @ 200MHz

TO-92

SK3050


20V

50mA

330mW

400MHz

6dB @ 200MHz

TO-72

SK3065


20V

50mA

330mW

500MHz

4,5dB @ 400MHz

TO-72

SK3991


25V

50mA

360mW

200MHz

4,5dB @ 200MHz

TO-72

TO-72

* = Shield lead connected to case


SDGG

SDGG

SDGG

RF Power Transistor

123 TO-92L

123 TO-202

123 TO-202N

123 TO-126

123 TO-220

T-31E

Bipolar NPN Power Transistor Transistor

Power

Gain

Voltage

Frequency

Mode

Case

Pin 123

2N3375

10W

5dB

28V

400MHz

FM

TO-60

2N3553

2,5W

12dB

28V

175MHz

FM/AM

TO-39

2N3632

20W

7dB

28V

175MHz

FM

TO-60

2N5943

1W

8dB

15V

400MHz

FM

TO-39

2N6094

75W

15dB

28V

30MHz

FM/AM/SSB

TO-217

2SC1173

10W

100MHz

FM/AM/SSB

TO-220

2SC1306

16W

30MHz

FM/AM/SSB

TO-220

BCE

2SC1307

16W

30MHz

FM/AM/SSB

TO-220

BCE

12dB

12V

2SC1590

5W

10dB

12,5V

136-174MHz

FM

TO-220

BEC

2SC1591

14W

7,5dB

12,5V

136-174MHz

FM

TO-220

BEC

2SC1678

5W

30MHz

TO-220

BCE

2SC1728

8W

80MHz

TO-202

EBC

2SC1729

14W

10dB

13,5V

175MHz

FM

T-31E

2SC1909

10W

14,5dB

13,5V

50MHz

FM/AM/SSB

TO-220

BCE

2SC1944

13W

11,1dB

12V

30MHz

TO-220

BCE

2SC1945

16W

14,5dB

12V

30MHz

FM/AM/SSB

TO-220

BEC

2SC1946

25W

6,7dB

13,5V

175MHz

FM

T-31E

2SC1946A

30W

10dB

13,5V

175MHz

FM

T-31E

2SC1957

1,8W

17dB

12V

30MHz

2SC1966

3W

7,8dB

13,5V

470MHz

FM

T-31E

2SC1967

7W

6,7dB

13,5V

470MHz

FM

T-31E

2SC1968

14W

3,7dB

13,5V

470MHz

FM

T-31E

2SC1968A

14W

5,4dB

13,5V

470MHz

FM

T-31E

2SC1969

18W

12dB

12V

30MHz

FM/AM/SSB

TO-220

BCE

2SC1970

1,5W

10dB

13,5V

175MHz

TO-220

BEC

2SC1971

7W

10dB

13,5V

175MHz

TO-220

BEC

2SC1972

14W

10dB

13,5V

175MHz

TO-220

BEC

2SC1973

1W

50MHz

TO-92L

BCE

2SC1974

13W

10dB

13,5V

30MHz

TO-220

BCE

2SC1975

4W

10dB

13,5V

30MHz

TO-220

BCE

2SC2028

1,8W

30MHz

TO-126

ECB

TO-126

ECB

2SC2029

6W

30MHz

TO-220

BCE

2SC2036A

1,4W

TO-202

BCE

2SC2050

20W

12dB

13,5V

30MHz

FM/AM/SSB

TO-220

BCE

2SC2053

0,2W

15,7dB

12V

175MHz

FM/AM

TO-92L

BCE

2SC2055

0,25W

15,3dB

12V

175MHz

FM/AM

TO-92L

BCE

2SC2075

4W

13,5

27MHz

TO-220

BCE

2SC2078

4W

13dB

12V

100MHz

FM/AM

TO-220

BCE

2SC2086

0,45W

13dB

12V

175MHz

FM/AM

TO-92L

BCE

2SC2092

4W

13dB

12V

100MHz

FM/AM/SSB

TO-220

BCE

2SC2094

15W

8,8dB

13,5V

175MHz

FM/AM/SSB

T-31E

2SC2166

6W

13,8dB

12V

30MHz

FM/AM/SSB

TO-220

BCE

2SC2207

16W

TO-220

BEC

2SC2237

6W

2SC2312

18,5W

2SC2314

1,8W

17dB

2SC2509

13W

14dB

2SC2527

60W

2SC2538

0,6W

10dB

12V

175MHz

FM/AM

TO-92L

2SC2539

14W

14,5dB

13,5V

175MHz

FM

T-31E

2SC2660

30W

2SC2695

23W

1,9dB

13,5V

520MHz

FM

T-31E

2SC3001

6W

13dB

7,2V

175MHz

FM

T-31E

2SC3018

3W

13dB

7,2V

175MHz

FM

T-31E

2SC3020

3W

10dB

12,5V

520MHz

FM

T-31E

13,8dB

13,5V

12V

175MHz

FM

T-31E

27MHz

FM/AM/SSB

TO-220

BCE

180MHz

FM/AM

TO-126

ECB

TO-220

BEC

30MHz

TO-220

TO-220

BCE

2SC3021

7W

7,7dB

12,5V

520MHz

FM

T-31E

2SC3022

18W

4,8dB

12,5V

520MHz

FM

T-31E

2SC3103

2,8W

6,7dB

7,2V

520MHz

FM

T-31E

2SC3104

6W

4,8dB

7,2V

520MHz

FM

T-31E

2SC3133

13W

14dB

12V

1,5-30MHz

FM/AM/SSB

TO-220

2SC3299

20W

2SC4137

4W

BEC

TO-220 400MHz

2SC4693

TO-126 FM/AM

TO-92L

BCE

100MHz

FM/AM

TO-92L

ECB

KTC1006

1W

KTC1969

16W

12dB

12V

100MHz

FM/AM

TO-220

BCE

KTC2078

4W

11dB

12V

100MHz

FM/AM

TO-220

BCE

MRF161

5W

13,5dB

12,5V

225-500MHz

FM/AM

TO-220

BEC

MRF162

15W

13,5dB

12,5V

225-500MHz

FM/AM

TO-220

BEC

MRF163

25W

12dB

12,5V

225-500MHz

FM/AM

TO-220

BEC

MRF260

5W

10dB

12,5V

136-174MHz

FM

TO-220

BEC

MRF261

10W

5,2dB

12,5V

136-174MHz

FM

TO-220

BEC

MRF262

14W

7,5dB

12,5V

136-174MHz

FM

TO-220

BEC

MRF264

30W

5,2dB

12,5V

136-174MHz

TO-220

BEC

MRF340

8W

13dB

28V

30-200MHz

TO-220

BEC

MRF342

24W

11dB

28V

30-200MHz

TO-220

BEC

MRF344

60W

6dB

28V

30-200MHz

TO-220

MRF475

12W

10dB

13,5V

1,5-30MHz

FM/AM/SSB

TO-220

BCE

MRF476

3W

15dB

13,5V

1,5-30MHz

FM/AM/SSB

TO-220

BCE

MRF477

40W

15dB

13,5V

1,5-30MHz

FM/AM/SSB

TO-220

MRF479

15W

10dB

13,5V

1,5-30MHz

FM/AM/SSB

TO-220

MRF485

15W

10dB

28V

1,5-30MHz

TO-220

MRF486

40W

15dB

28V

1,5-30MHz

TO-220

MRF496

40W

15dB

13,5V

1,5-30MHz

TO-220

MRF497

60W

10dB

13,5V

27-50MHz

TO-220

MRF660

7W

5,4dB

12,5V

400-512MHz

TO-220

BEC

BEC

FET Power Transistor MS1307

25W

dB

13,5V

30MHz

FM/AM/SSB


TO-220

GDS

2SC1307 Silicon NPN Transistor Final RF Power Output

The 2SC1307 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

BCE

Features: ●

High Power Gain: Gpe >/= 12dB (VCC = 12V, PO = 16W, f = 27MHz)

●

Ability to Withstand Infinite VSWR Load when Operated at: VCC = 16V, PO = 20W, f = 27MHz

Application: 10 to 14 Watt Output Power Class AB Amplifier Applications in HF Band Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) ●

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25°C), PD Collector Power Dissipation (TC = +50°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC Thermal Resistance, Junction-to-Ambient, RthJA

25V 60V 5V 6A 1.7W 20W +150°C -55° to +150°C 6.25°C/W 73.5°C/W

Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage

Symbol Test Conditions V(BR)CBO IC = 1mA, IE = 0

Min Typ Max Unit 60 V

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity

25

-

-

V

Emitter-Base Breakdown Voltage

5

-

-

V

V(BR)EBO IE = 5mA, IC = 0

Collector Cutoff Current

ICBO

VCB = 30V IE = 0

-

-

100 µA

Emitter Cutoff Current

IEBO

VEB = 4V, IC = 0

-

-

100 µA

DC Forward Current Gain

hFE

VCE = 12V, IC = 10mA, Note 1

10

50

180

Power Output

PO

VCC = 12V, Pin = 1W, f = 27MHz 16

18

-

W

60

70

-

%

Collector Efficiency

Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.


2SC1590 Silicon NPN Transistor RF Power Output

The 2SC1590 is a silicon NPN epitaxial planer type transistor designed for 136-174MHz RF power amplifiers on VHF band mobile radio applications.

BEC

Features: ●

High Power Gain: Gpe >/= 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)

●

Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHz

Application: 4 to 5 Watt Output Power Amplifier Applications in VHF Band Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) ●


17V 35V 4V 12A 1.5W 12.5W +150°C -55° to +150°C 10°C/W 83°C/W





17

-

-

V


4

-

-

V



ICBO

VCB = 25V IE = 0

-

-

500 µA


IEBO

VEB = 3V, IC = 0

-

-

500 µA


hFE


10

50

180

Power Output

PO

VCC = 13.5V, Pin = 600mW, f = 175MHz

6

7

-

W

60

70

-

%





The 2SC1591 is a silicon NPN epitaxial planer type transistor designed for 136-174MHz RF power amplifiers on VHF band mobile radio applications.

BEC

Features: ●

High Power Gain: Gpe >/= 7.5dB (VCC = 13.5V, PO = 14W, f = 175MHz)

●


Application: 10 to 14 Watt Output Power Amplifier in VHF Band Mobile Radio Applications Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) ●


17V 35V 4V 3.5A 1.5W 25W +175°C -55° to +175°C 6°C/W 100°C/W





17

-

-

V


4

-

-

V



ICBO

VCB = 25V IE = 0

-

-

1000 µA


IEBO

VEB = 3V, IC = 0

-

-

500 µA


hFE


10

50

180

Power Output

PO

VCC = 13.5V, Pin = 2.5W, f = 175MHz 14

15

-

W

60

70

-

%





Description: 2SC1909 is a silicon NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.

BCE Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector-Emitter Voltage (RBE = 150 Ohm), VCER 75V Collector-Base Voltage, VCBO 80V Emitter-Base Voltage, VEBO 5V Collector Current, IC Continuous 3A Peak 5A Collector Power Dissipation (TA = +25°C), PD 1.2W Collector Power Dissipation (TC = +50°C), PD 10W Operating Junction Temperature, TJ +150°C Storage Temperature Range, Tstg -55° to +150°C

Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

V(BR)CBO

IC = 100µA, IB = 0

80

-

-

V

Collector-Emitter Breakdown Voltage

V(BR)CER

IC = 1mA, RBE = 150 Ohm

75

-

-

V


V(BR)EBO

IE = 100µA, IC = 0

5

-

-

V


ICBO

VCB = 40V IE = 0

-

-

10

µA


IEBO

VEB = 4V, IC = 0

-

-

10

µA

25

-

200

DC Current Gain

hFE

VCE = 5V, IC = 0.5A

Collector-Emitter Saturation Voltage

VCE(sat)

IC = 1A, IB = 0.1A

-

0.15

0.60

V

Base-Emitter Saturation Voltage

VBE(sat)

IC = 1A, IB = 0.1A

-

0.9

1.2

V

Current Gain-Bandwidth Product

fT

100

150

-

MHz

VCE = 10V, IC = 0.1A

Output Capacitance

Cob

VCB = 10V, f = 1MHz

25

-

-

Power Output

PO

VCC = 12V, Pin = 0.2W, f = 27MHz

4.0

-

-

W

60

-

-

%





BEC

Features: ●

High Power Gain: Gpe >/= 14,5dB (VCC = 12V, PO = 18W, f = 27MHz)

●




40V 80V 5V 6A 1.5W 20W +150°C -55° to +150°C 6.25°C/W 83,3°C/W





40

-

-

V


5

-

-

V



ICBO

VCB = 30V IE = 0

-

-

100 µA


IEBO

VEB = 4V, IC = 0

-

-

100 µA


hFE


10

50

180

Power Output

PO

VCC = 12V, Pin = 1W, f = 27MHz 14

16

-

W

60

70

-

%




2SC1946 Silicon NPN Transistor Final RF Power Output in VHF band mobile radio application. ECE

The 2SC1946 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers. EBE

Features: ●

High Power Gain: Gpe >/= 6,7dB (VCC = 13,5V, PO = 28W, f = 175MHz)

●

Ability to Withstand Infinite VSWR Load when Operated at: VCC = 15,2V, PO = 30W, f = 175MHz

Application: 25 Watt output power amplifiers in VHF band. Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) ●

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25°C), PD Collector Power Dissipation (TC = +50°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Rth-c

17V 35V 4V 7A 3W 50W +175°C -65° to +175°C 3°C/W





17

-

-

V


4

-

-

V



ICBO

VCB = 25V IE = 0

-

-

2

mA


IEBO

VEB = 3V, IC = 0

-

-

1

mA


hFE

VCE = 10V, IC = 0,2A, Note 1

10

50

180

Power Output

PO

VCC = 13,5V, Pin = 6W, f = 175MHz 28

32

-

W

60

70

-

%




2SC1946A Silicon NPN Transistor Final RF Power Output in VHF band mobile radio application. ECE

The 2SC1946A is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers. EBE

Features: ●

High Power Gain: Gpe >/= 10dB (VCC = 13,5V, PO = 30W, f = 175MHz)

●


Application: 25 Watt output power amplifiers in VHF band. Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) ●


17V 35V 4V 7A 3W 50W +175°C -55° to +175°C 3°C/W





17

-

-

V


4

-

-

V



ICBO

VCB = 25V IE = 0

-

-

2

mA


IEBO

VEB = 3V, IC = 0

-

-

1

mA


hFE

VCE = 10V, IC = 0,2A, Note 1

10

50

180

Power Output

PO

VCC = 13,5V, Pin = 6W, f = 175MHz 30

35

-

W

60

70

-

%






BCE

Features: ●


●



Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25°C), PD Collector Power Dissipation (TC = +50°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC

25V 60V 5V 6A 1.7W 20W +150°C -55° to +150°C 6.25°C/W

Thermal Resistance, Junction-to-Ambient, RthJA

73.5°C/W





25

-

-

V


5

-

-

V



ICBO

VCB = 30V IE = 0

-

-

100 µA


IEBO

VEB = 4V, IC = 0

-

-

100 µA


hFE


10

50

180

Power Output

PO

VCC = 12V, Pin = 1W, f = 27MHz 16

18

-

W

60

70

-

%






BCE

Features: ●


●



Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25°C), PD Collector Power Dissipation (TC = +50°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC

25V 60V 5V 6A 1.7W 20W +150°C -55° to +150°C 6.25°C/W

Thermal Resistance, Junction-to-Ambient, RthJA

73.5°C/W





25

-

-

V


5

-

-

V



ICBO

VCB = 30V IE = 0

-

-

100 µA


IEBO

VEB = 4V, IC = 0

-

-

100 µA


hFE


10

50

180

Power Output

PO

VCC = 12V, Pin = 1W, f = 27MHz 16

18

-

W

60

70

-

%





The 2SC1970 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications.

BEC

Features: ●

High Power Gain: Gpe >/= 9,2dB (VCC = 13.5V, PO = 6W, f = 175MHz)

Application: 0,8 to 1 Watt Output Power Amplifier Applications in VHF Band Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) ●


17V 35V 4V 0,6A 1W 5W +150°C -55° to +150°C 25°C/W 125#176;C/W


Symbol

Test Conditions

Min Typ Max Unit


V(BR)CBO IC = 5mA, IE = 0

40

-

-

V


17

-

-

V


4

-

-

V



ICBO

VCB = 25V IE = 0

-

-

100 µA


IEBO

VEB = 3V, IC = 0

-

-

100 µA


hFE


10

50

180

Power Output

PO

VCC = 13.5V, Pin = 600mW, f = 175MHz

1

1,2

-

W

50

60

-

%






BEC

Features: ●

High Power Gain: Gpe >/= 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)

●




17V 35V 4V 2A 1.5W 12.5W +150°C -55° to +150°C 10°C/W 83°C/W





17

-

-

V


4

-

-

V



ICBO

VCB = 25V IE = 0

-

-

500 µA


IEBO

VEB = 3V, IC = 0

-

-

500 µA


hFE


10

50

180

Power Output

PO

VCC = 13.5V, Pin = 600mW, f = 175MHz

6

7

-

W

60

70

-

%






BEC

Features: ●

High Power Gain: Gpe >/= 7,5dB (VCC = 13.5V, PO = 14W, f = 175MHz)

●




17V 35V 4V 3,5A 1.5W 25W +150°C -55° to +150°C 6°C/W 100°C/W





17

-

-

V


4

-

-

V



ICBO

VCB = 25V IE = 0

-

-

1000 µA


IEBO

VEB = 3V, IC = 0

-

-

500 µA


hFE


10

50

180

Power Output

PO

VCC = 13.5V, Pin = 600mW, f = 175MHz 14

15

-

W

60

70

-

%




2SC1973 Silicon NPN Transistor RF Amplifier The 2SC1973 is a silicon NPN epitaxial planer type transistor designed for RF amplifiers on HF band mobile radio applications. BCE

Application: Driver Amplifier Applications in HF Band Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) ●

Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Ambient, RthJA

55V -V -V 0,5A 1W +135°C -55° to +150°C -°C/W


2SC2036A Audio Amplifier, Driver

ECB Absolute Maximum Ratings: (TA = +25°C unles otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Continuous Peak Collector Dissipation (TA = +25°C), PC Collector Dissipation (TC = +25°C), PC Operating Junction Temperature, TJ Storage Temperature Range, Tstg

180V 160V 5V 1.5A 3.0A 1W 20W +150°C -55° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage


Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE = Infinity Emitter-Base Breakdown Voltage


Min Typ Max Unit 180 V 160

-

-

V

5

-

-

V

-

-

10

µA


ICBO

VCB = 160V, IE = 0

DC Current Gain

hFE

IC = 150mA, VCE = 5V

60

-

200


30

-

-

-

-

1

V


VCE(sat) IC = 500mA, IB = 50mA

Base-Emitter Voltage

VBE

VCE = 5V, IC = 150mA

-

-

1.5

V

Transition Frequency

fT


-

140

-

MHz

Collector Output Capacitance

Cob

VCB = 10V, IE = 0, f = 1MHz


-

14

-

pF

2SC2053 Silicon NPN Transistor RF Amplifier The 2SC2053 is a silicon NPN epitaxial planer type transistor designed for RF amplifiers on VHF band mobile radio applications. BCE

Features: ●

High Power Gain: Gpe >/= 15,7dB (VCC = 13,5V, PO = 0,15W, f = 175MHz)

Application: Driver Amplifier Applications in VHF Band Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) ●


17V 40V 4V 0,3A 0,6W +135°C -55° to +150°C 183°C/W





17

-

-

V


4

-

-

V

-

-

20

µA


V(BR)EBO IE = 1mA, IC = 0 ICBO

VCB = 15V IE = 0


IEBO

VEB = 3V, IC = 0


hFE


Power Output

PO

VCC = 13.5V, Pin = 4mW, f = 175MHz 0,15 0,2


-

-

20

10

50

180

40



50

µA

-

W

-

%


Features: ●

High Power Gain: Gpe >/= 13dB (VCC = 7,2V, PO = 0,2W, f = 175MHz)



9V 18V 4V 0,3A 0,5W +135°C -55° to +150°C 220°C/W





9

-

-

V


4

-

-

V

-

-

30

µA



VCB = 10V IE = 0


IEBO

VEB = 3V, IC = 0


hFE


Power Output

PO

VCC = 13.5V, Pin = 4mW, f = 175MHz 0,2 0,25


-

-

30

10

50

180

50



60

µA

-

W

-

%


The 2SC2078 is a silicon NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.

BCE Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector-Emitter Voltage (RBE = 150 Ohm), VCER Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Continuous Peak Collector Power Dissipation (TA = +25°C), PD Collector Power Dissipation (TC = +50°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

75V 80V 5V 3A 5A 1.2W 10W +150°C -55° to +150°C


Symbol Test Conditions V(BR)CBO IC = 100µA, IB = 0


Collector-Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150 Ohm

75

-

-

V


5

-

-

V

V(BR)EBO IE = 100µA, IC = 0


ICBO

VCB = 40V IE = 0

-

-

10

µA


IEBO

VEB = 4V, IC = 0

-

-

10

µA

DC Current Gain

hFE

VCE = 5V, IC = 0.5A

25

-

200


VCE(sat) IC = 1A, IB = 0.1A

-

0.15 0.60

V


VBE(sat) IC = 1A, IB = 0.1A

-

0.9

1.2

V MHz


fT

VCE = 10V, IC = 0.1A

100 150

-

Output Capacitance

Cob

VCB = 10V, f = 1MHz

25

-

-

Power Output

PO

VCC = 12V, Pin = 0.2W, f = 27MHz 4.0

-

-

W

60

-

-

%




Features: ●

High Power Gain: Gpe >/= 13dB (VCC = 12V, PO = 0,3W, f = 27MHz)

Application: Driver Amplifier Applications in HF Band Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) ●


35V 75V 4V 1A 0,8W +135°C -55° to +150°C 137,5°C/W





35

-

-

V


4

-

-

V

-

-

10

µA



VCB = 30V IE = 0


IEBO

VEB = 3V, IC = 0


hFE


Power Output

PO

VCC = 12V, Pin = 15mW, f = 27MHz 0,3 0,45


-

-

35

70

50



60

100 µA 300 -

W

-

%


The 2SC2092 is a silicon NPN transistor in a TO-220 type case designed for use in medium power output amplifier stages such as citizen band communications equipment.

BCE Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector-Emitter Voltage (RBE = 150 Ohm), VCER 75V Collector-Base Voltage, VCBO 80V Emitter-Base Voltage, VEBO 5V Collector Current, IC Continuous 3A Peak 5A Collector Power Dissipation (TA = +25°C), PD 1.2W Collector Power Dissipation (TC = +50°C), PD 10W Operating Junction Temperature, TJ +150°C Storage Temperature Range, Tstg -55° to +150°C




Collector-Emitter Breakdown Voltage

V(BR)CER IC = 1mA, RBE = 150 Ohm

75

-

-

V



5

-

-

V


ICBO

VCB = 40V IE = 0

-

-

10

µA


IEBO

VEB = 4V, IC = 0

-

-

10

µA

DC Current Gain

hFE

VCE = 5V, IC = 0.5A

25

-

200


VCE(sat)

IC = 1A, IB = 0.1A

-

0.15 0.60

V


VBE(sat)

IC = 1A, IB = 0.1A

-

0.9

1.2

V


fT

VCE = 10V, IC = 0.1A

100 150

-

MHz

Output Capacitance

Cob

VCB = 10V, f = 1MHz

25

-

-

Power Output

PO

VCC = 12V, Pin = 0.2W, f = 27MHz

4.0

-

-

W

60

-

-

%



2SC2094 Silicon NPN Transistor Final RF Power Output in VHF band mobile radio application. ECE

The 2SC2094 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers. EBE

Features: ●

High Power Gain: Gpe >/= 8,8dB (VCC = 13,5V, PO = 15W, f = 175MHz)

●


Application: 10 to 14 Watt output linear power amplifiers in VHF band. Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) ●


17V 40V 4,5V 3,5A 2W 30W +175°C -55° to +175°C 5°C/W





17

-

-

V


4,5

-

-

V

2

mA



ICBO

VCB = 25V IE = 0

-

-


IEBO

VEB = 3V, IC = 0

-

-


hFE

VCE = 10V, IC = 0,1A, Note 1

10

50

180

Power Output

PO

VCC = 13,5V, Pin = 2W, f = 175MHz 15

16

-

W

60

70

-

%




0,5 mA



BCE

Features: ●

High Power Gain: Gpe >/= 13,8dB (VCC = 12V, PO = 6W, f = 27MHz)



75V 75V 5V 4A 1.5W 12,5W +150°C -55° to +150°C 10°C/W 83°C/W


Symbol

Test Conditions

Min Typ Max Unit


V(BR)CBO IC = 1mA, IE = 0

75

-

-

V


75

-

-

V


5

-

-

V



ICBO

VCB = 30V IE = 0

-

-

100 µA


IEBO

VEB = 4V, IC = 0

-

-

100 µA


hFE


35

70

180

Power Output

PO

VCC = 12V, Pin = 0,25W, f = 27MHz

6

7,5

-

W

55

60

-

%




2SC2314 Silicon NPN Transistor RF Power Output, Driver The 2SC2314 are silicon transistors in a TO-126 type package designed for 27MHz CB Transceiver Driver Applications. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage (RBE = 150 Ohms), VCER Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEB Collector Current, IC Continuous Peak Collector Dissipation (TA = +25°C), PD Collector Dissipation (TC = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

75V 75V 45V 5V 1.0A 1.5A 750mW 5W +150°C -55° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage

Symbol Test Conditions ICBO VCB = 40V, IE = 0 IEBO

VEB = 4V, IC = 0

-

-

1.0

µA

75

-

-

V

75

-

-

V

V(BR)CEO IC = 1mA, RBE = Infinity

45

-

-

V


5

-

-

V

-

320

V(BR)CBO IC = 10µA, IE = 0

Collector-Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150 Ohms Emitter-Base Breakdown Voltage DC Current Gain Gain-Bandwidth Product

Min Typ Max Unit - 1.0 µA

hFE


60

fT


180 250

-

MHz


VCE(sat) IC = 500mA, IB = 50mA

-

0.2

0.6

V


VBE(sat) IC = 500mA, IB = 50mA

-

0.9

1.2

V

-

15

25

pF

-

W

-

%

Output Capacitance

Cob

VCB = 10V, f = 1MHz

Output Power

PO

VCC = 12V, f = 27MHz, Pi = 35mW 1.0 1.8


60

Medlem av HyperBanner Norge


-


Features: ●

High Power Gain: Gpe >/= 10dB (VCC = 13,5V, PO = 0,5W, f = 175MHz)


Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25°C), PD Collector Power Dissipation (TC = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Ambient, RthJA

17V 40V 4V 0,4A 0,7W 3W +135°C -55° to +150°C 157°C/W





17

-

-

V


4

-

-

V



ICBO

VCB = 15V IE = 0

-

-

100 µA


IEBO

VEB = 3V, IC = 0

-

-

200 µA


hFE


10

80

Power Output

PO

VCC = 13.5V, Pin = 50mW, f = 175MHz 0,5 0,6


45



55

300 -

W

-

%



BEC

Features: ●


●


Application: 10 Watt Output Power SSB Amplifier Applications in HF Band Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) ●


25V 70V 5V 6A 1.5W 20W +150°C -55° to +150°C 6.25°C/W 83,3°C/W





25

-

-

V


5

-

-

V



ICBO

VCB = 30V IE = 0

-

-

500 µA


IEBO

VEB = 4V, IC = 0

-

-

500 µA


hFE


10

50

180

Power Output

PO

VCC = 12V, Pin = 0,5W, f = 27MHz 13

16

-

W

60

70

-

%




2SC3299 Power Amp Driver, Output Switch

The 2SC3299 are silicon transistors in a TO-220 type package designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. BCE

Features: Low Collector-Emitter saturation Voltage ● Fast Switching Speeds ● Complementary Pairs Simplifies Design Absolute Maximum Ratings: ●

Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEB Collector Current, IC Continuous Peak (Note 1) Total Power Dissipation (TC = +25°C), PD Total Power Dissipation (TA = +25°C), PD Operating Junction Temperature Range, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC Thermal Resistance, Junction-to-Ambient, RthJA Lead Temperature (During Soldering, 1/8" from case, 5sec), TL

80V 5V 10A 20A 50W 1.67W -55° to +150°C -55° to +150°C 2.5°C/W 75°C/W +275°C

Note 1. Pulse Width /= 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)

●




17V 35V 4V 12A 1.5W 12.5W +150°C -55° to +150°C 10°C/W 83°C/W





17

-

-

V


4

-

-

V



ICBO

VCB = 25V IE = 0

-

-

500 µA


IEBO

VEB = 3V, IC = 0

-

-

500 µA


hFE


10

50

180

Power Output

PO

VCC = 13.5V, Pin = 600mW, f = 175MHz

6

7

-

W

60

70

-

%




MRF262 Silicon NPN Transistor RF Power Output

The MRF262 is a silicon NPN epitaxial planer type transistor designed for 136-174MHz RF power amplifiers on VHF band mobile radio applications.

BEC

Features: ●

High Power Gain: Gpe >/= 7.5dB (VCC = 13.5V, PO = 14W, f = 175MHz)

●


Application: 10 to 14 Watt Output Power Amplifier in VHF Band Mobile Radio Applications Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) ●


17V 35V 4V 3.5A 1.5W 25W +175°C -55° to +175°C 6°C/W 100°C/W





17

-

-

V


4

-

-

V



ICBO

VCB = 25V IE = 0

-

-

1000 µA


IEBO

VEB = 3V, IC = 0

-

-

500 µA


hFE


10

50

180

Power Output

PO

VCC = 13.5V, Pin = 2.5W, f = 175MHz 14

15

-

W

60

70

-

%




MRF475 Silicon NPN Transistor Final RF Power Output

The MRF475 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

BCE

Features: ●


●




25V 60V 5V 6A 1.7W 20W +150°C -55° to +150°C 6.25°C/W 73.5°C/W





25

-

-

V


5

-

-

V



ICBO

VCB = 30V IE = 0

-

-

100 µA


IEBO

VEB = 4V, IC = 0

-

-

100 µA


hFE


10

50

180

Power Output

PO

VCC = 12V, Pin = 1W, f = 27MHz 16

18

-

W

60

70

-

%





The MRF476 is a silicon NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.

BCE Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector-Emitter Voltage (RBE = 150 Ohm), VCER Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Continuous Peak Collector Power Dissipation (TA = +25°C), PD Collector Power Dissipation (TC = +50°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

75V 80V 5V 3A 5A 1.2W 10W +150°C -55° to +150°C




Collector-Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150 Ohm

75

-

-

V


5

-

-

V



ICBO

VCB = 40V IE = 0

-

-

10

µA


IEBO

VEB = 4V, IC = 0

-

-

10

µA

DC Current Gain

hFE

VCE = 5V, IC = 0.5A

25

-

200


VCE(sat) IC = 1A, IB = 0.1A

-

0.15 0.60

V


VBE(sat) IC = 1A, IB = 0.1A

-

0.9

1.2

V MHz


fT

VCE = 10V, IC = 0.1A

100 150

-

Output Capacitance

Cob

VCB = 10V, f = 1MHz

25

-

-

Power Output

PO

VCC = 12V, Pin = 0.2W, f = 27MHz 4.0

-

-

W

60

-

-

%




The MRF485 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

Features: ●


●




25V 60V 5V 6A 1.7W 20W +150°C -55° to +150°C 6.25°C/W 73.5°C/W

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Collector-Base Breakdown Voltage




25

-

-

V


5

-

-

V



ICBO

VCB = 30V IE = 0

-

-

100 µA


IEBO

VEB = 4V, IC = 0

-

-

100 µA


hFE


10

50

180

Power Output

PO

VCC = 12V, Pin = 1W, f = 27MHz 16

18

-

W

60

70

-

%




MS1307 MOSFET N-Channel Power MOS-FET

The MS1307 is a MOS power N-Channel FET in a TO-220 type package designed for RF power applications.

GDS


Transistor Database


2N...

2N109 2N1305 2N1613 2N1893 2N2148 2N2166 2N2222A 2N2223A 2N2369A 2N2894 2N2906A 2N2917 2N2955 2N3053 2N3055 2N3055H 2N3375 2N3440 2N3442 >150MHz 2N3502 2N3571 >10MHz 2N3632 2N3700 100MHz 2N3708 2N3725 2N3741 2N3767 2N3772 2N3792 2N3820 2N3824 2N3904 2N3909

GE-P 35V 0.15A 0.165W GE-P 30V 0.3A 0.15W 5MHz SI-N 75V 1A 0.8W 60MHz SI-N 120V 0.5A 0.8W GE-P 60V 5A 12.5W SI-P 15V 50mA 0.15W 10MHz SI-N 40V 0.8A 0.5W 300MHz 2xSI-N 100V 0.5A 0.6W >50 SI-N 40V 0.2A .36W 12/18ns SI-P 12V 0.2A 1.2W 60/90ns SI-P 60V 0.6A 0.4W 45/100 SI-N 45V 0.03A >60Mz GE-P 40V 0.1A 0.15W 200MHz SI-N 60V 0.7A 5W 100MHz SI-N 100V 15A 115W 800kHz SI-N 100V 15A 115W 800kHz SI-N 40V 0.5A 11.6W 500MHz SI-N 300V 1A 10W 15MHz SI-N 160V 10A 117W 0.8MHz

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2N1304 2N1307 2N1711 2N2102 2N2165 2N2219A 2N2223 2N2243A 2N2857 2N2905A 2N2907A 2N2926 2N3019 2N3054 2N3055 2N3251 2N3439 2N3441 2N3495

SI-P 45V 0.6A 0.7W 200MHz SI-N 30V 0.05A 0.2W 1.4GHz

| 2N3553 | 2N3583

SI-N 65V 0.35A 7W 500MHz SI-N 250/175V 2A 35W

SI-N 40V 0.25A 23W 400MHz SI-N 140V 1A 0.5W 200MHz

| 2N3646 | 2N3707

SI-N 40V 0.2A 0.2W SI-N 30V 0.03A 0.36W

SI-N 30V 0.03A 0.36W 80MHz SI-N 80V 0.5A 1W 35/60ns SI-N 80V 4A 25W >4MHz SI-N 100V 4A 20W >10MHz SI-N 100V 20A 150W POWER SI-P 80V 10A 150W 4MHz P-FET 20V 15mA 0.36W N-FET 50V 10mA 0.3W 4MHz SI-N 300V 0.05A 1W >30MHz SI-N 50V 30A 150W POWER SI-N 160V 16A 150W POWER N-FET 25V 20mA 0.36W N-FET 50V 2.5mA 0.3W SI-N 55V 0.4A 1W 175MHz SI-P 40V 0.2A .35W 250MHz N-FET 50V 5mA 0.25W

2N3716 2N3740 2N3742 2N3771 2N3773 2N3819 2N3821 2N3866 2N3906 2N3958

GE-N 25V 0.3A 0.15W 10MHz GE-P 30V 0.3A 0.15W B>60 SI-N 75V 1A 0.8W 70MHz SI-N 120V 1A 1W 50 SI-N 120V 1A 0.8W 50MHz SI-N 30V 40mA 0.2W >1GHz SI-P 60V 0.6A 0.6W 45/100 SI-P 60V 0.6A 0.4W 45/100 SI-N 25V 0.1A 0.2W 300MHz SI-N 140V 1A 0.8W 100MHz SI-N 90V 4A 25W 3MHz SI-N 100V 15A 115W 800kHz SI-P 50V 0.2A 0.36W SI-N 450V 1A 10W 15MHz SI-N 160V 3A 25W POWER SI-P 120V 0.1A 0.6W

2N3963 2N4001 2N4036 2N4126 2N4236 2N428 2N4287 2N4302 2N4348 140KHz 2N4391 2N4393 2N4403 2N4420 2N4906 2N4923 2N5090 2N5116 2N5179 2N5240 2N5308 2N5322 2N5416 2N5457 2N5460 2N5462 2N5485 2N5589 2N5672 2N5682 2N5686 >900MHz 2N5771 2N5878 2N5884 2N6031 2N6059 2N6098 AFPOWSWITCH 2N6109 2N6211 2N6248 2N6287 2N6356 2N6427 2N6488 2N6517 2N6547 2N6609 2N6661 2N6678 2N6718 2N6728 2N7002 2N918

SI-P 80V 0.2A 0.36W >40MHz SI-N 100V 1A 15W 40MHz SI-P 90V 1A 1W 60MHz SI-P 25V 200mA HF SI-P 80V 3A 1W >3MHz GE-P 30V 0.4A 0.15W B>60 SI-N 45V 0.1A 0.25W 40MHz N-FET 30V 0.5mA 0.3W SI-N 140V 10A 120W >0.2MHz

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2N3972 2N4033 2N409 2N4220 2N427 2N4286 2N4291 2N4347 2N4351

N-FET 40V 50mA 1.8W SI-P 80V 1A 0.8W 150MHz GE-P 13V 15mA 80mW 6.8MHz N-FET 30V 0.2A GE-P 30V 0.4A 0.15W B>40 SI-N 30V 0.05A 0.25W SI-P 40V 0.2A 0.25W 150MH SI-N 140V 5A 100W 0.8MHz N-FET 30V 30mA 0.3W

N-FET 40V 50mA 30E Up2MHz N-DARL 40V 0.3A 0.4W B>7K SI-P 100V 2A 10W AFSWITCH SI-P 350V 1A 10W 15MHz N-FET 25V 1mA Up75 SI-N 80V 7A 40W SI-P 500V 2A 35W >10MHz SI-P 130V 4A 16W 5MHz SI-P 90V 15A 30W SI-P 350V 0.5A 0.625W >40 SI-P 100V 1A 10W >75MHz N-FET 60V 2A 6.25W 3E SI-N 400V 15A SI-N 60V 2A 2W 50MHz N-DARL 60V 2A 1W B>15K SI-N 60V 1A 0.6W 4MHz 80V 25A 200W AFPOWSW 140V 16A 200W 1MHz 100V 12A 150W 70V 10A 75W AFPOWSWITCH

SI-P 60V 7A 40W 10MHz SI-P 275V 2A 20W 20MHz SI-P 110V 15A 125W >6MHz P-DARL 100V 20A 160W N-DARL 50V 20A 150W B>150 N-DARL 40V 0.5A 0.625W SI-N 90V 15A 75W SI-N 350V 0.5A 0.625W >40 SI-N 850/400V 15A 175W SI-P 160V 16A 150W 2MHz N-FET 90V 2A 6.2W 4E SI-N 400V 15A SI-N 100V 2A 2W 50MHz SI-P 60V 2A 2W >50MHz N-FET 60V 0.115A 0.2W 7E5 SI-N 30V 50mA 0.2W 600MHz

10A 150W >4MHz 10A 150W >4MHz 25A 200W >4MHz 60V 12A 100W 5A PQ=30W 175MHz 10A 75W

2SA1009 2SA1013 2SA1016 110MHz 2SA1018 2SA1027 2SA1034 2SA1048 100MHz 2SA1061 2SA1065 2SA1103 2SA1110 2SA1112 2SA1120 200MHz 2SA1124 2SA1141 2SA1145 2SA1156 2SA1163 2SA1185 2SA1200 120MHz 2SA1206 150MHz 2SA1208 2SA1210 2SA1215 2SA1220A 2SA1225 2SA1232 2SA1242 2SA1249 2SA1262 2SA1265N 2SA1268 200MHz 2SA1271 2SA1282 2SA1286 2SA1292 2SA1294 2SA1296 2SA1300 2SA1303 2SA1306A 2SA1309 2SA1315 2SA1317 2SA1319 100MHz 2SA1328 2SA1345 2SA1348

SI-P 350V 2A 15W SI-P 160V 1A 0.9W 50MHz SI-P 100V 0.05A 0.4W 110MHz

| 2SA1011 | 2SA1015 | 2SA1017

SI-P 160V 1.5A 25W 120MHz SI-P 50V 0.15A 0.4W 80MHz SI-P 120V 50mA 0.5W

SI-P SI-P SI-P SI-P

250V 70mA 0.75W >50MHz 50V 0.2A 0.25W 100MHz 35V 50mA 0.2W 200MHz 50V 0.15A 0.2W 80MHz

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2SA1020 2SA1029 2SA1037 2SA1049

SI-P SI-P SI-P SI-P

50V 2A 0.9W 100MHz 30V 0.1A 0.2W 280MHz 50V 0.4A 140MHz FR 120V 0.1A 0.2W

SI-P SI-P SI-P SI-P SI-P SI-P

100V 6A 70W 15MHz 150V 10A 120W 50MHz 100V 7A 70W 20MHz 120V 0.5A 5W 250MHz 180V 1A 20W 200MHz 35V 5A 170MHz

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2SA1062 2SA1084 2SA1106 2SA1111 2SA1115 2SA1123

SI-N SI-P SI-P SI-P SI-P SI-P

120V 7A 80W 15MHz 90V 0.1A 0.4W 90MHz 140V 10A 100W 20MHz 150V 1A 20W 200MHz 50V 0.2A 200MHz UNI 150V 50mA 0.75W

SI-P SI-P SI-P SI-P SI-P SI-P SI-P

150V 50mA 1W 200MHz 115V 10A 100W 90MHz 150V 50mA 0.8W 200MHz 400V 0.5A 10W POWER 120V 0.1A 100MHz 50V 7A 60W 100MHz 150V 50mA 0.5W 120MHz

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2SA1127 2SA1142 2SA1150 2SA1160 2SA1170 2SA1186 2SA1201

SI-P SI-P SI-P SI-P SI-P SI-P SI-P

60V 0.1A 0.4W 200MHz 180V 0.1A 8W 180MHz 35V 0.8A 0.3W 120MHz 20V 2A 0.9W 150MHz 200V 17A 200W 20MHz 150V 10A 100W 120V 0.8A 0.5W

SI-P 15V 0.05A 0.6W

| 2SA1207

SI-P 180V 70mA 0.6W

SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-N

180V 0.07A 0.9W 200V 0.14A 10W 160V 15A 150W 50MHz 120V 1.2A 20W 160MHz 160V 1.5A 15W 100MHz 130V 10A 100W 60MHz 35V 5A 1W 170MHz 180V 1.5A 10W 120MHz 60V 4A 30W 15MHz 140V 10A 100W 30MHz 120V 0.1A 0.3W 100MHz

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2SA1209 2SA1213 2SA1216 2SA1221 2SA1227A 2SA1241 2SA1244 2SA1261 2SA1264N 2SA1266 2SA1270

SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P

180V 0.14A 10W 50V 2A 0.5W 120MHz 180V 17A 200W 40MHz 160V 0.5A 1W 45MHz 140V 12A 120W 60MHz 50V 2A 10W 100MHz 60V 5A 20W 60MHz 100V 10A 60W POWER 120V 8A 80W 30MHz 50V 0.15A 0.4W POWER 35V 0.5A 0.5W

SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P

30V 0.8A 0.6W 120MHz 20V 2A 0.9W 80MHz 30V 1.5A 0.9W 90MHz 80V 15A 70W 100MHz 230V 15A 130W 20V 2A 0.75W 120MHz 10V 2A 0.75W 140MHz 150V 14A 125W 50MHz 180V 1.5A 20W 100MHz 30V 0.1A 0.3W 80MHz 80V 2A 0.9W 0.2us 60V 0.2A 0.3W 200MHz 180V 0.7A 0.7W 120MHz

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2SA1275 2SA1283 2SA1287 2SA1293 2SA1295 2SA1298 2SA1302 2SA1306 2SA1307 2SA1310 2SA1316 2SA1318 2SA1321

SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P

160V 1A 0.9W 20MHz 60V 1A 0.9W 85MHz 50V 1A 0.9W 90MHz 100V 5A 30W 0.2us 230V 17A 200W 35MHz 30V 0.8A 0.2W 120MHz 200V 15A 150W 25MHz 160V 1.5A 20W 60V 5A 20W 0.1us 60V 0.1A 0.3W 200MHz 80V 0.1A 0.4W 50MHz 60V 0.2A 0.5W 200MHz 250V 50mA 0.9W

SI-P 60V 12A 40W 0.3us SI-N 50V 0.1A 0.3W 250MHz SI-P 50V 0.1A 200MHz

| 2SA1329 | 2SA1346 | 2SA1349

SI-P 80V 12A 40W 0.3us SI-P 50V 0.1A 200MHz P-ARRAY 80V 0.1A 0.4W 170

2SA1352 2SA1358 2SA1360 2SA1370 2SA1376 2SA1381 2SA1383 2SA1387 2SA1396 2SA1400 2SA1405 2SA1407 2SA1428 2SA1441 2SA1450 2SA1460 2SA1475 2SA1477 2SA1489 2SA1491 2SA1507 2SA1516 2SA1535A 2SA1539 2SA1541 2SA1566 2SA1568 2SA1593 2SA1606 2SA1624 2SA1626 2SA1643 2SA1668 2SA1671 2SA1673 100/400ns 2SA1684 20MHz 2SA1695 2SA1706 2SA1726 2SA1803 2SA1930 2SA329 2SA473 2SA493 2SA562 2SA608 2SA620 2SA628 2SA642 2SA653 2SA699 2SA720 100MHz

SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-N SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P SI-P

200V 0.1A 5W 70MHz 120V 1A 10W 120MHz 150V 50mA 5W 200MHz 200V 0.1A 1W 150MHz 200V 0.1A 0.75W 120MHz 300V 0.1A 150MHz 180V 0.1A 10W 180MHz 60V 5A 25W 80MHz 100V 10A 30W 400V 0.5A 10W 120V 0.3A 8W 500MHz 150V 0.1A 7W 400MHz 50V 2A 1W 100MHz 100V 5A 25W 1K P-DARL+D 100V 4A 25W

SI-P 80V 5A 30W P-DARL+D 100V 3A 1W B>200 SI-P 40V 1A 1.2W 150MHz SI-P 32V 2A 1.2W 100MHz SI-P 150V 9A 100W 15MHz SI-P 160V 12A 2.5W 15MHz P-DARL+D 120V 16A 75W B>2 SI-P 120V 16A 80W 50MHz SI-P 180V 15A 150W 10MHz SI-P 60/30V 12A 25W P-DARL 160V 7A 90W B>5K P-DARL 160V 8A 120W B>5K P-DARL 140V 7A 100W B>5K P-DARL 160V 10A 100W 50MHz P-DARL+D 160V 8A 70W B>5K GE-P 80V 30A 80W GE-P 50V 7A 30W LF-POWER GE-P 32V 1A 6W 15KHz SI-P 35V 1.5A 10W 8MHz SI-P 110V 0.8A 10W 70MHz SI-P 130V 1.5A 20W 40MHz SI-P 110V 8A 80W 9MHz SI-P 200V 2A 25W 5MHz SI-P 120V 8A 80W

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2SB1302 2SB1326 2SB1330 2SB1353E 2SB1370 2SB1375 2SB1393 2SB1425 2SB1434 2SB1470 2SB1493 2SB1556 2SB1559 2SB1565 2SB1624 2SB324 2SB407 2SB492 2SB524 2SB531 2SB537 2SB544 2SB549 2SB560

SI-P 25V 5A 320MHz SI-P 30V 5A 0.3W 120MHz SI-P 32V 0.7A 1.2W 100MHz SI-P 120V 1.5A 1.8W 50MHz SI-P 60V 3A 30W 15MHz SI-P 60V 3A 25W 9MHz SI-P 30V 3A 2W 30MHz SI-P 20V 2A 1W 90MHz SI-P 50V 2A 1W 110MHz P-DARL 160V 8A 150W B>5K P-DARL 160/140V 7A 70W 20 P-DARL 140V 8A 120W B>5K P-DARL 160V 8A 80W B>5K SI-P 80V 3A 25W 15MHz P-DARL 110V 6A 60W B>5K GE-P 32V 1A 0.25W GE-P 30V 7A 30W GE-P 25V 2A 6W SI-P 60V 1.5A 10W 70MHz SI-P 90V 6A 50W 8MHz SI-P 130V 1.5A 20W 60MHz SI-P 25V 1A 0.9W 180MHz SI-P 120V 0.8A 10W 80MHz SI-P 100V 0.7A 0.9W

SI-P 25V 0.7A 0.5W SI-P 25V 1A 0.5W 180MHz P-DARL 100V 5A 30W SI-N 25V 1.5A 0.6W 200MHz SI-P 100V 1A 8W SI-P 100V 6A 40W 15MHz SI-P 30V 0.1A 120MHz SI-P 160V 1.5A 1W 140MHz P-DARL+D 100V 7A 40W 0.8us SI-N 150V 12A 100W 13MHz SI-P 160V 12A 100W SI-P 140V 10A 120W 17MHz

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2SB564 2SB600 2SB605 2SB621A 2SB632 2SB637 2SB647 2SB656 2SB676 2SB688 2SB703 2SB707

SI-P 30V 1A 0.8W SI-P 200V 15A 200W 4MHz SI-P 60V 0.7A 0.8W 120MHz SI-N 50V 1A 0.75W 200MHz SI-P 25V 2A 10W 100MHz SI-P 50V 0.1A 0.3W 200MHz SI-P 120V 1A 0.9W 140MHz SI-P 160V 12A 125W 20MHz P-DARL 100V 4A 30W 0.15us SI-P 120V 8A 80W 10MHz SI-P 100V 4A 40W 18MHz SI-P 80V 7A 40W POWER

2SB709 2SB720 2SB731 2SB734 2SB740 2SB750 2SB764 2SB766 2SB774 2SB776 150MHz 2SB791 2SB795 250MHz 2SB810 250MHz 2SB816 2SB817F 2SB822 2SB825 2SB827 2SB829 2SB861 2SB865 2SB882 2SB884 2SB891 2SB895A 2SB908 2SB922 2SB938A 2SB941 2SB946 2SB953A 2SB975 2SB985 2SB988 2SC1008 >80MHz 2SC1014 2SC1030 2SC1047 2SC1051 2SC1070 2SC109 2SC1106 2SC1115 2SC1161 2SC1172 2SC1213C 2SC1215 2SC1226 2SC1247A 2SC1312 2SC1343

SI-P 45V 0.1A 0.2W 80MHz SI-P 200V 2A 25W 100MHz SI-P 60V 1A 10W 75MHz SI-P 60V 1A 1W 80MHz SI-P 70V 1A 0.9W P-DARL+D 60V 2A 35W B>100 SI-P 60V 1A 0.9A 150MHz SI-P 30V 1A 200MHz SI-P 30V 0.1A 0.4W 150MHz SI-P 120V 7A 70W 15MHz

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2SB716 2SB727 2SB733 2SB739 2SB744 2SB753 2SB765 2SB772 2SB775 2SB788

SI-P 120V 0.05A 0.75W P-DARL+D 120V 6A 50W B>1K SI-P 20V 2A 1W >50MHz SI-P 20/16V 2A 0.9W 80MHz SI-P 70V 3A 10W 45MHz SI-P 100V 7A 40W 0.4us P-DARL+D 120V 3A 30W B>1K SI-P 40V 3A 10W 80MHz SI-P 100V 6A 60W 13MHz SI-P 120V 0.02A 0.4W

P-DARL+D 120V 8A 40W B>10 P-DARL+D 80V 1.5A 10W B5K P-DARL 110V 3A 30W B=4K SI-P 40V 2A 5W 100MHz P-DARL 60V 1A B=8000 P-DARL+D 80V 4A 15W 0.15us SI-P 120V 12A 80W 20MHz P-DARL+D 60V 4A 40W B>1K SI-P 60V 3A 35W POWER SI-P 130V 7A 40W 30MHz SI-P 50V 7A 30W 150MHz P-DARL+D 100V 8A 40W B>6K SI-P 60V 3A 1W 150MHz SI-P 60V 3A 30W 1 SI-P 40V 1A 1W 150MHz SI-P 30V 2A 0.75W SI-P 200V 2A 35W 30MHz SI-P 130V 5A 40W 30MHz P-DARL+D 80V 4A 40W B>1K P-DARL+D 120V 10A 50W B=4 SI-P 27V 5A 0.75W 120MHz SI-P 60V 4A 10W 150MHz SI-N 55V 0.1A 0.2W 80MHz SI-N 250V 60mA 0.75W

SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-P SI-N SI-N SI-N SI-N SI-N SI-N SI-N

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2SC1017 2SC1046 2SC1050 2SC1061 2SC1080 2SC1096 2SC1114 2SC1116 2SC1162 2SC1195 2SC1214 2SC1216 2SC1238 2SC1308 2SC1318 2SC1345

SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N

50V 1.5A 7W 150V 6A 50W 30V 20mA 0.4W 650MHz 150V 7A 60W 8MHz 30V 20mA 900MHz 50V 0.6A 0.6W 350V 2A 80W 140V 10A 100W 10MHz 160V 12A 120W 1500V 5A 50W 50V 0.5A 0.4W UNI 30V 50mA 0.4W 1.2GHZ 40/50V 2A 10W 150MHz 50V 0.5A 0.4W 60MHz 35V 0.1A 0.15W 100MHz 150V 10A 100W 14MHz

75V 1A 60mW 120MHz 1000V 3A 25W 300V 1A 40W 50V 3A 25W 8MHz=H106 110V 12A 100W 4MHz 40V 3A 10W 60MHz 300V 4A 100W 10MHz 180V 10A 100W 10MHz 35V 1.5A 10W 180MHz 200V 2.5A 100W 50V 0.5A 0.6W 50MHz 40V 0.2A 0.3W 300MHz 25V 1.5A 8W 180MHz 60V 1A 1W 200MHz 70V 2A 15W 50V 2A 20W 5MHz 110V 2A 23W 80MHz 150V 50mA 0.5W

SI-N 100V 6A 40W 10MHz SI-N 300V 0.15A 20W 80MHz SI-N 40V 2A 5W 60MHz SI-N 300V 4A 50W 10MHz SI-N 300V 0.1A 10W 55MHz SI-N 300V 0.2A 15W 80MHz SI-N 200V 0.05A 0.2W 110MHz N-DARL 40V 0.3A 0.3W B=1K SI-N 55V 0.1A 0.2W 100MHz SI-N 200V 0.1A 1W 80MHz SI-N 50V 0.1A 0.4W 100MHz SI-N 60V 0.1A 0.2W 250MHz SI-N 80V 0.4A 0.8W 100MHz SI-N 50V .03A 0.25W SI-N 60V 0.1A 150MC UNI SI-N 120V 50mA 0.2W 150MHz SI-N 30V 0.05A 1.1GHz UHF SI-N 40V 0.5A 0.3W 250MHz SI-N 100V 1A 7.9W 80MHz SI-N 50V 0.5A 0.35W SI-N 60V 0.15A 0.4W B>350 SI-N 60V 0.15A 0.4W B>120 N-DARL 500V 15A 150W B>10 SI-N 60V 0.1A 0.5W 100MHz SI-N 120V 0.05A 0.5W SI-N 20V 20mA 0.25W 550MHz N-DARL+D 120V 2A 0.8W B>1

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2SC1446 2SC1448 2SC1450 2SC1474-4 2SC1505 2SC1509 2SC1520 2SC1567 2SC1571 2SC1577 2SC1619 2SC1624 2SC1674 2SC1678 2SC1688 2SC1729 2SC1740 2SC1756 2SC1775A 2SC1815 2SC1815GR 2SC1827 2SC1841 2SC1845 2SC1847 2SC1871 2SC1890

SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N

300V 0.1A 10W 55MHz 150V 1.5A 25W 3MHz 150V 0.4A 20W 20V 2A 0.75W 80MHz 300V 0.2A 15W 80V 0.5A 1W 120MHz 300V 0.2A 12,5W 100V 0.5A 5W 120MHz 40V 0.1A 0.2W 100MHz 500V 8A 80W 7MHz 100V 6A 50W 10MHz 120V 1A 15W 30MHz 30V .02A 600MC RF/IF 65V 3A 3W 50V 30mA 0.4W 550MHz 35V 3.5A 16W 500MHz 40V 100mA 0.3W 300V 0.2A >50MHz 120V 0.05A 0.2W UNI 50V 0.15A 0.4W 80MHz 60V 0.15A 0.4W B>200 100V 4A 30W 10MHz 120V 0.05A 0.5W 120V 0.05A 0.5W 50V 1.5A 1.2W 450V 15A 150W 15W

SI-N SI-N SI-N SI-N SI-N

50V 15A PQ=85W 800V 10A 50W 200V 2A 30W 10MHz 50V 1.5A 10W 150MHz 160V 0.05A 0.75W >50

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2SC2120 2SC2166 2SC2200 2SC2216 2SC2229


30V 0.8A 0.6W 120MHz 75V 4A 12.5W RFPOWER 500V 7A 40W 1US 45V 50mA 0.3W 300MHz 200V 50mA 0.8W

SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N

200V 0.1A 0.8W 50MHz 120V 0.8A 0.9W 120MHz 35V 2A PQ>7.5W 175MHz 120V 50mA .3W 100MHz 400/360V 0.1A 0.4W 300V 0.1A 0.9W 50MHz 38V 0.75A 2.8W(500MHz 30V 0.03A 0.2W 250MHz 55V 0.1A 0.2W 230MHz 60V 6A 18.5W/27MHz 50V 0,2A 0,3W 150V 2A 15W POWER 150V 7A 40W POWER 250V 1.5A 25W 95MHz 15V 50mA 250mW 650MHz

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2SC2233 2SC2236 2SC2238 2SC2261 2SC2270 2SC2275 2SC2287 2SC2307 2SC2310 2SC2314 2SC2329 2SC2333 2SC2335 2SC2344 2SC2362

SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N

200V 4A 40W 8MHz 30V 1.5A 0.9W 120MHz 160V 1.5A 25W 100MHz 180V 8A 80W 15MHz 50V 5A 10W 100MHz 120V 1.5A 25W 200MHz 38V 1.5A 7.1W 175MHz 500V 12A 100W 18MHz 55V 0.1A 0.2W 230MHz 45V 1A 5W 38V 0.75A 2W 175MHz 500/400V 2A 40W 500V 7A 40W POWER 180V 1.5A 25W 120MHz 120V 50mA 0.4W

SI-N 120V 50mA 0.5W 130MHz SI-N 25V 70mA 0.25W 4.5GHz SI-N 120V 50mA 0.3W 140MHz

| 2SC2365 | 2SC2383 | 2SC2407

SI-N 600V 6A 50W POWER SI-N 160V 1A 0.9W 100MHz SI-N 35V 0.15A 0.16W

SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N

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SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N

50V 0.1A 180MHz 450V 5A 40W 30V 0.05A 2.2GHz 100V 6A 70W 15MHz 100V 6A 40W 15MHz 30V 0.05A 0.3W 3.5GHz 55V 20A 250W(28MHz) 150V 5A 30W 8 30V 3A 15W 100MHz 500V 0.8A 10W 1/1.5us 250V 30A 200W 25MHz 50V 0.15A 0.4W 100MHz 180V 1.5A 10W 120MHz 900V 3A 40W 1us 900V 6A 100W 500V 7A 60W 500V 2A 25W >8MHz 1200V 2A 60W 80V 6A 60W 30MHz 140V 10A 100W 30MHz 60V 0.15A 0.2W 130MHz

300V 0.1A 140MHz 500V 10A 100W 2.5us 800V 3A 40W 36V 0.5A 175MHz 20V 3A PQ=7W(175MHz) 35V 1A 10W 1700V 5A 50W POWER 500V 7A 52W 50V 0.2A 0.15W

SI-N 35V 0.5A 0.5W 300MHz SI-N 30V 2A 1W 120MHz

| 2SC3203 | 2SC3206

SI-N 35V 0.8A 0.6W 120MHz SI-N 150V 0.5A 0.8W

SI-N 500V 10A 100W 1us

| 2SC3211

SI-N 800V 5A 70W >3MHz

2SC3212 2SC3231 2SC3242 130MHz 2SC3245A 2SC3247 2SC3258 2SC3262 2SC3264 2SC3277 2SC3280 2SC3284 2SC3297 2SC3300 2SC3306 2SC3309 2SC3311 2SC3326 2SC3328 2SC3331 120MHz 2SC3334 2SC3346 2SC3356 2SC3378 2SC3381 2SC3397 2SC3400 2SC3402 2SC3409 2SC3419 2SC3421O 2SC3422Y 2SC3425 2SC3447 2SC3457 2SC3461 2SC3467 2SC3486 2SC3503 500MHz 2SC3505 2SC3509 2SC3518 2SC3526 2SC3549 2SC3568 2SC3577 2SC3591 2SC3596 2SC3599 2SC3601 2SC3611 2SC3621 2SC3632

SI-N 800V 7A 3W 3.5MHz SI-N 200V 4A 40W 8MHz SI-N 20V 2A 0.9W 80MHz

| 2SC3225 | 2SC3240 | 2SC3244E

SI-N 40V 2A 0.9W 1us SI-N 50V 25A 110W 30MHz SI-N 100V 0.5A 0.9W

SI-N 150V 0.1A 0.9W 200MHz SI-N 50V 1A .9W 130MHz B> SI-N 100V 5A 30W 120MHz N-DARL 800V 10A 100W SI-N 230V 17A 200W 60MHz SI-N 500V 10A 90W 20MHz SI-N 160V 12A 120W 30MHz SI-N 150V 14A 125W 60MHz SI-N 30V 3A 15W 100MHz SI-N 100V 15A 100W SI-N 500V 10A 100W 1us SI-N 500V 2A 20W 1us SI-N 60V 0.1A 0.3W 150MHz SI-N 20V 0.3A 0.15W 30MHz SI-N 80V 2A 0.9W 100MHz SI-N 60V 0.2A 0.5W 200MHz

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2SC3246 2SC3257 2SC3260 2SC3263 2SC3271 2SC3279 2SC3281 2SC3293 2SC3299 2SC3303 2SC3307 2SC3310 2SC3320 2SC3327 2SC3330 2SC3332

SI-N 30V 1.5A 0.9W 130MHz SI-N 250V 10A 40W 1/3.5us N-DARL 800V 3A 50W B>10 SI-N 230V 15A 130W SI-N 300V 1A 5W 80MHz SI-N 10V 2A 0.75W 150MHz SI-N 200V 15A 150W 30MHz N-DARL+D 50V 1.2A 20W 180 SI-N 60V 5A 20W 0.1us SI-N 100V 5A 20W 0.2us SI-N 900V 10A 150W 1us SI-N 500V 5A 30W 1us SI-N 500V 15A 80W SI-N 50V 0.3A 0.2W 30MHz SI-N 60V 0.2A 0.3W 200MHz SI-N 180V 0.7A 0.7W

SI-N 250V 50mA 0.9W 100MHz SI-N 80V 12A 40W 0.2us SI-N 20V 0.1A 0.2W 7GHz SI-N 120V 0.1A 0.2W 100MHz 2xSI-N 80V 0.1A 0.4W 170MHz SI-N 50V 0.1A 250MHz 46K/ SI-N 50V 0.1A 250MHz 22K/ SI-N 50V 0.1A 250MHz 10K/ SI-N 900V 2A 80W .8uS SI-N 40V 0.8A 5W 100MHz SI-N 120V 1A 1.5W BJT O-G SI-N 40V 3A 10W 100MHz SI-N 500V 0.8A 10W SI-N 800V 5A 50W 18MHz SI-N 1100V 3A 50W SI-N 1100/800V 8A 120W SI-N 200V 0.1A 1W 150MHz SI-N 1500V 6A 120W SI-N 300V 0.1A 7W 150MHz

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2SC3345 2SC3355 2SC3377 2SC3379 2SC3383 2SC3399 2SC3401 2SC3405 2SC3416 2SC3420 2SC3421Y 2SC3423 2SC3446 2SC3456 2SC3460 2SC3466 2SC3468 2SC3502 2SC3504

SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N

60V 12A 40W 90MHz 20V 0.1A 0.6W 6.5GHz 40V 1A 0.6W 150MHz 20V 1.5A PQ=3W 60V 0.2A 0.5W 250MHz 50V 0.1A 250MHz 50V .1A 46K/23KOHM 900V 0.8A 20W 1us 200V 0.1A 5W 70MHz 50V 5A 10W 100MHz 120V 1A 10W 120MHz 150V 50mA 5W 200MHz 800V 7A 40W 18MHz 1100/800V 1.5A 40W 1100V 6A 100W 1200/650V 8A 120W 300V 0.1A 1W 150MHz 200V 0.1A 1.2W 70V 0.05A 0.9W

SI-N 900V 6A 80W N-DARL+D 900V 10A 100W 0. SI-N 60V 5A 10W SI-N 110V 0.15A 7A 30W 1us SI-N 900V 3A 40W SI-N 150V 10A 30W SI-N 850V 5A 80W 6MHz SI-N 400V 7A 50W SI-N 80V 0.3A 8W 700MHz SI-N 120V 0.3A 8W 500MHz SI-N 200V 0.15A 7W 400MHz SI-N 50V 0.15A 4W 300MHz SI-N 150V 1.5A 10W 100MHz SI-N 600V 1A 10W 30MHz

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2SC3507 2SC3514 2SC3520 2SC3528 2SC3552 2SC3571 2SC3581 2SC3595 2SC3597 2SC3600 2SC3608 2SC3616 2SC3623 2SC3636

SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N SI-N

1000/800V 5A 80W 180V 0.1A 10W 200MHz 500V 18A 130W 18MHz 500V 20A 125W 1100V 12A 150W 15MHz 500V 7A 30W 55V 0.4A 0.9W 150MHz 30V 0.5A 5W 2GHz 80V 0.5A 10W 800MHz 200V 0.1A 7W 400MHz 20V 0.08A 6.5GHz 25V 0.7A 250MHz 60V 0.15A 0.25W B=1K 900/500V 7A 80W

2SC3642 2SC3656 2SC3668 2SC3675 2SC3679 6MHz 2SC3684 2SC3692 2SC3746 100/600ns 2SC3752 2SC3782 2SC3787 2SC3789 2SC3792 2SC3807 2SC380TM 2SC3831 2SC3842 2SC3851 2SC3855 2SC3858 2SC3868 2SC3884A 2SC388A 2SC3892A 2SC3895 2SC3897 2SC3907 2SC394 2SC3943 2SC3948 2SC3952 2SC3954 2SC3956 2SC3972 2SC3979A 2SC3996 2SC3999 2SC4020 2SC4029 3.2GHz 2SC4046 2SC4056 2SC4064 2SC4119 2SC4125 2SC4135 2SC4138 2SC4157 2SC4161 2SC4199 2SC4204 2SC4235 2SC4237


1200V 6A 100W 200ns 50V 0.1A 0.4W 10K/10 50V 2A 1W 100MHz 1500/900V 0.1A 10W 900/800V 5A 100W

| | | | |

2SC3655 2SC3659 2SC3669 2SC3678 2SC3680

SI-N 50V 0.1A 0.4W 46/23K SI-N+D 1700/800V 5A 50W SI-N 80V 2A 1W 0.2us SI-N 900V 3A 80W SI-N 900/800V 7A 120W

SI-N+D 1500V 10A 150W SI-N 100V 7A 30W 200 SI-N 80V 10A 30W

SI-N 1100/800V 3A 30W SI-N 200V 0.2A 15W 400MHz SI-N 180V 0.14A 10W 150MHz SI-N 300V 0.1A 7W 70MHz SI-N 50V 0.5A 0.5W 250MHz SI-N 30V 2A 15W 260MHz SI-N 30V 50mA 0.3W 100MHz SI-N 500V 10A 100W SI-N 600V 10A 70W 32MHz SI-N 80V 4A 25W 15MHz SI-N 200V 10A 100W 20MHz SI-N 200V 17A 200W 20MHz SI-N 500V 1.5A 25W 0.7us SI-N 1500V 6A 50W SI-N 25V 50mA 0.3W 300MHz SI-N+D 1500V 7A 50W 0.4us SI-N 1500/800V 8A 70W SI-N 1500V 10A 70W SI-N 180V 12A 130W 30MHz SI-N 25V 0.1A 200MC RF SI-N 110V 0.15A 2W 300MHz SI-N 850V 10A 75W 20MHz SI-N 80V 0.5A 10W 700MHz SI-N 120V 0.3A 8W 400MHz SI-N 200V 0.2A 7W 70MHz SI-N 800/500V 5A 40W SI-N 800V 3A 2W 10MHz SI-N 1500/800V 15A 180W SI-N 300V 0.1A 0.75W 300MHz SI-N 900V 3A 50W 1us SI-N 230V 15A 150W 30MHz

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2SC3781 2SC3783 2SC3788 2SC3790 2SC3795A 2SC3808 2SC3811 2SC3833 2SC3844 2SC3852 2SC3857 2SC3866 2SC3883 2SC3886A 2SC3890 2SC3893A 2SC3896 2SC3902 2SC3927 2SC3940 2SC3944 2SC3950 2SC3953 2SC3955 2SC3964 2SC3973A 2SC3987 2SC3998 2SC4004 2SC4024 2SC4043

SI-N 120V 0.4A 15W 500MHz SI-N 800V 5A 100W SI-N 200V 0.1A 5W 150MHz SI-N 300V 0.1A 7W 150MHz SI-N 900V 5A 40W N-DARL 80V 2A 170MHz B>80 SI-N 40V 0.1A 0.4W 450MHz SI-N 500/400V 12A 100W SI-N 600V 15A 75W 30MHz SI-N 80V 3A 25W 15MHz SI-N 200V 15A 150W 20MHz SI-N 900V 3A 40W SI-N+D 1500V 6A 50W SI-N 1500V 8A 50W 0.1us SI-N 500V 7A 30W 500NS SI-N+D 1500V 8A 50W SI-N 1500V 8A 70W SI-N 180V 1.5A 10W 120MHz SI-N 900V 10A 120W SI-N 30V 1A 1W 200MHz SI-N 150V 1A 40W 300MHz SI-N 30V 0.5A 5W SI-N 120V 0.2A 8W 400MHz SI-N 200V 0.1A 7W 300MHz SI-N 40V 2A 1.5W 1us SI-N 900V 7A 45W N-DARL+D 50V 3A 15W SI-N 1500V 25A 250W POWER SI-N 900/800V 1A 30W 300 SI-N 20V 50mA 0.15W

SI-N 120V 0.2A 8W 350MHz SI-N 600V 8A 45W SI-N 50V 12A 35W 40MHz N-DARL+D 1500V 15A 250W B SI-N+D 1500/800V 10A 70W SI-N 120V 2A 15W 200MHz SI-N 500V 10A 80W 800 SI-N 35V 0.5A 0.6W 60MHz SI-N 1500V 8A 50W 0.2us SI-N 1700V 10A 50W 03us SI-N 140V 10A 100W 30MHz SI-N 230V 15A 130W 30MHz SI-N+D 1500V 8A 60W SI-N 1500V 10A 70W 0.2US SI-N 40V 0.1A 180MC UNI SI-N 1100V 2.5A 50W SI-N 30V 30mA 0.14W 200MHz SI-N 30V 0.05A 150MHz SI-N 30V 50mA 0.2W 600MHz SI-N 50V 0.15A 0.4W 150MHz SI-N 15V 100mA 0.1W SI-N 40V 0.02A 500MC RF

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2SC458 2SC460 2SC4744 2SC4747 2SC4769 2SC4793 2SC4820 2SC4834 2SC4891 2SC4924 2SC5002 2SC5027 2SC5045 2SC5048 2SC5086 2SC5144 2SC5149 2SC5171 2SC5207 2SC5244A 2SC5297 2SC535 2SC620 2SC644 2SC710 2SC712 2SC730 2SC735 2SC756 2SC815

SI-N 30V 0.1A 230MC UNI SI-N 30V 0.1A 0.2W 230MHz SI-N 1500V 6A POWER SI-N 1500V 10A 50W 0.3us SI-N+D 1500V 7A 60W SI-N 230V 1A 2W 100MHz SI-N 450V 6A 30W 12MHz SI-N 500V 8A 45W 1 SI-N 150/120V 15A 150W SI-N 20V 0.7A 0.25W 250MHz SI-N 50V 1.5A 1W 150MHz SI-N 60V 12A 40W 10MHz SI-N 60V 15A 90W N-DARL 300V 6A 30W B>2000 N-DARL 150V 5A 30W SI-N 200V 2A 30W SI-N 60V 5A 0.9W 120MHz SI-N 80V 1.5A 0.9W SI-N 150V 1.5A 10W DAR+DI SI-N 100V 10A 80W 10MHz N-DARL+D 70V 10A 40W B=5K N-DARL 30V 1A 1W 150MHz N-DARL+D 150V 10A 80W B=5 SI-N 40V 1A 1W 150MHz SI-N+D 2500/900V 1A 50W SI-N 30V 2.5A 1W SI-N 130V 4A 35W 30MHz SI-N 200V 2A 30W POWER SI-N 60V 3A 35W POWER SI-N 130V 5A 2W 30MHz SI-N 200V 1A 40W 25MHz SI-N 150V 5A 40W 40MHz N-DARL+D 60V 1A 8W B=1K-3 SI-N 120V 8A 80W SI-N 120V 1A 1W 100MHz SI-N 25V 0.5A 0.6W 200MHz

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2SC930 2SC941 2SC945 2SD1010 2SD1018 2SD1033 2SD1047 2SD1049 2SD1055 2SD1064 2SD1073 2SD1113K 2SD1135 2SD1140 2SD1148 2SD1163A 2SD1173 2SD1189 2SD1196 2SD1207 2SD1213 2SD1238 2SD1246 2SD1254 2SD1263A 2SD1265 2SD1267 2SD1271 2SD1273 2SD1276 2SD1288 2SD1292 2SD1297 2SD1306

SI-N 15V 0.03A 300MC RF SI-N 35V 20mA 0.2W 120MHz SI-N 50V 0.1A 250MC UNI SI-N 50V 50mA 0.3W 200MHz SI-N 250V 4A 80W B>250 SI-N 200V 2A 20W 10MHz SI-N 160V 12A 100W 15MHz SI-N 120V 25A 100W SI-N 40V 2A 0.75W 100MHz SI-N 60V 12A 80W N-DARL 300V 4A 40W B>1K N-DARL+D 300V 6A 40W SI-N 80V 4A 40W N-DARL 30V 1.5A 0.9W SI-N 140V 10A 100W 20MHz SI-N 300V 7A 40W SI-N+D 1500V 5A 70W SI-N 40V 2A 5W 100MHz N-DARL+D 110V 8A 40W B=40 SI-N 60V 2A 1W SI-N 60V 20A 50W SI-N 120V 12A 80W 20MHz SI-N 30V 2A 0.75W SI-N 130V 3A 30W SI-N 400V 0.75A 35W 30MHz SI-N 60V 4A 30W 25kHz SI-N 60V 4A 40W 20MHz SI-N 130V 7A 40W 30MHz SI-N 80V 3A 40W 50MHz N-DARL 60V 4A 40W SI-N 120V 7A 70W SI-N 120V 1A 0.9W 100MHz N-DARL+D 150V 25A 100W SI-N 30V 0.7A 150mW

N-DARL+D 150V 8A 40W N-DARL+D 600V 15A 150W SI-N 60V 3A 1W 150MHz SI-N 600V 0.5A 1W 55MHz SI-N 80V 0.7A 10W 120MHz SI-N 40V 2A 10W 100MHz SI-N 40V 2A 0.75W 100MHz N-DARL+D 60V 5A 30W B=800 SI-N+D 1500V 5A 50W SI-N 1500V 6A 120W SI-N 50V 3A 25W 2us SI-N 100V 5A 30W 12MHz N-DARL+D 600V 6A 25W 1us N-DARL+D 60V 3A 20W .O1US

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2SD1313 2SD1330 2SD1348 2SD1376K 2SD1379 2SD1382 2SD1391 2SD1397 2SD1399 2SD1404 2SD1406 2SD1408 2SD1411 2SD1415

SI-N 800V 25A 200W 6MHz SI-N 25V 0.5A 0.6W 200MHz SI-N 60V 4A 10W 150MHz N-DARL+D 120V 1.5A 40W N-DARL 40V 2A 10W 150MHz SI-N 120V 1A 10W 100MHz SI-N 1500V 5A 80W SI-N+D 1500V 3.5A 50W SI-N+D 1500V 6A 80W SI-N+D 300V 7A 25W 1us SI-N 60V 3A 25W 0.8us SI-N 80V 4A 30W 8MHz SI-N 100V 7A 30W 10MHz N-DARL+D 100V 7A 30W

SI-N+D 1500V 3.5A SI-N+D 1500V 6A 80W SI-N+D 1500V 3A 50W N-DARL+D 500V 6A 40W B>50 N-DARL+D 140V 6A 60W

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2SD1427 2SD1432 2SD1441 2SD1453 2SD1458

SI-N+D 1500V 5A 80W SI-N 1500V 6A 80W SI-N+D 1500V 4A 80W SI-N 1500V 3A 50W SI-N 20V 0.7A 1W

2SD1468 2SD1496 2SD1504 2SD1508 2SD1511 2SD1525 2SD1541 2SD1554 2SD1556 2SD1565 2SD1577 2SD1589 2SD1595 2SD1610 2SD1632 2SD1649 2SD1651 2SD1656 2SD1664 2SD1667 2SD1669 2SD1680 2SD1683 2SD1706 2SD1710 2SD1729 2SD1739 2SD1758 2SD1761 2SD1763A 2SD1765 2SD1776 2SD1785 2SD1791 2SD1802 2SD1809 2SD1815 2SD1825 20MHz 2SD1830 2SD1843 2SD1849 2SD1856 2SD1858 2SD1862 2SD1864 2SD1878 2SD1881 2SD1894 2SD1913 2SD1930 2SD1944 2SD1959 2SD198 2SD1992

SI-N 30V 1A 0.3..0.4W 150 SI-N 1500V 5A 50W SI-N 30V 0.5A 0.3W 300MHz N-DARL 30V 1.5A 10W B>400 N-DARL 100V 1A 1W 150MHz N-DARL+D 100V 30A 150W SI-N 1500V 3A 50W SI-N+D 1500V 3.5A 40W 1us SI-N+D 1500V 6A 50W 1us N-DARL+D 100V 5A 30W SI-N 1500V 5A 80W N-DARL+D 100V 5A 20W N-DARL+D 60V 5A 20W B=6K SI-N 200V 0.1A 1.3W 140MHz N-DARL+D 1500V 4A 80W SI-N+D 1500/800V 2,5A 50W SI-N+D 1500/800V 5A 60W SI-N 1500V 6A 50W 3MHz SI-N 40V 1A 0.5W 150MHz SI-N 60V 5A 25W 30MHz SI-N 60V 12A 30W SI-N 330/200V 7A 70W SI-N 60V 4A 10W 150MHz SI-N 130/80V 15A 80W 20MHz SI-N 1500/800V 5A 100W SI-N+D 1500/700V 3.5A 60W SI-N 1500/700V 6A 100W SI-N 40V 2A 10W 100MHz SI-N 80V 3A 35W SI-N 120V 1.5A 20W 80MHz N-DARL+D 100V 2A 20W B>1K SI-N 80V 2A 25W 40MHz N-DARL+D 120V 6A 30W 100MHz N-DARL 100V 7A 30W 50MHz SI-N 60V 3A 15W 150MHz N-DARL 60V 1A 0.9W B>2K SI-N 120V 3A 20W 180MHz N-DARL+D 70V 4A 20W

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2SD1491 2SD1497-02 2SD1506 2SD1509 2SD1521 2SD1526 2SD155 2SD1555 2SD1563A 2SD1576 2SD1579 2SD1590 2SD1609 2SD1624 2SD1647 2SD1650 2SD1652 2SD1663 2SD1666 2SD1668R 2SD1677 2SD1681 2SD1684 2SD1707 2SD1725 2SD1730 2SD1740 2SD1760 2SD1762 2SD1764 2SD1769 2SD1783 2SD1790 2SD1796 2SD1806 2SD1812 2SD1817 2SD1827

N-DARL+D 70V 2A 10W B>2K SI-N 1500V 6A 50W SI-N 60V 3A 10W 90MHz N-DARL+D 80V 2A 10W 0.4uS N-DARL+D 50V 1.5A 2W B>2K SI-N 130V 1A 1W 200MHz SI-N 80V 3A 25W SI-N+D 1500V 5A 40W 1us SI-N 160V 1.5A 10W 80MHz SI-N 1500V 2.5A 48W N-DARL+D 150V 1.5A 1W N-DARL+D 150V 8A 25W SI-N 160V 0.1A NF/S-L SI-N 60V 3A .5W 150MHz N-DARL+D 50V 2A 25W SI-N+D 1500/800V 3.5A 50W SI-N+D 1500V 6A 60W 3MHz SI-N 1500V 5A 80W 0.5us SI-N 60V 3A 20W SI-N 60V 7A 30W SI-N 1500V 5A 100W 0.5us SI-N 20V 1.2A 10W 150MHz SI-N 120V 1.2A 10W 150MHz SI-N 130/80V 20A 100W SI-N 120V 4A 20W 180MHz SI-N+D 1500/700V 5A 100W N-DARL 150V 5A 25W B=5000 SI-N 60V 3A 15W 90MHz SI-N 60V 3A 25W 70MHz N-DARL+D 60V 2A 20W B>100 N-DARL+D 120V 6A 50W N-DARL+D 60V 5A 30W B=2K N-DARL+D 200V 4A 25W B=1K N-DARL+D 60V 4A 25W SI-N+D 40V 2A 15W 150MHz SI-N 160V 1.5A 0.9W SI-D 80V 3A 15W B>2K N-DARL+D 70V 10A 30W

N-DARL+D 110V 8A 30W B=4K N-DARL+D 60V 1A 1W B>2000 SI-N+D 1500/700V 7A 120W N-DARL+D 60V 5A 25W SI-N 40V 1A 1W 150MHz SI-N 40V 2A 1W 100MHz SI-N 60V 3A 1W 90MHz SI-N+D 1500V 5A 60W 0.3us SI-N+D 1500V 10A 70W SI-N 160V 7A 70W 20MHz SI-N 60V 3A 20W 100MHz N-DARL 100V 2A 1.2W B=500 SI-N 80V 3A 30W 50MHz SI-N 1400V 10A 50W SI-N 300V 1A 25W 45MHz SI-N 30V 0.5A 0.6W 200MHz

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2SD1835 2SD1847 2SD1853 2SD1857 2SD1859 2SD1863 2SD1877 2SD1880 2SD1887 2SD1895 2SD1929 2SD1933 2SD1958 2SD1978 2SD1991 2SD1994

SI-N 60V 2A 150MHz 60/580 SI-N+D 1500/700V 5A 100W N-DARL+D 80V 1.5A 0.7W B> SI-N 120V 1.5A 1W 80MHz SI-N 80V 0.7A 1W 120MHz SI-N 120V 1A 1W 100MHz SI-N+D 1500/800V 4A 50W SI-N+D 1500V 8A 70W SI-N 1500/800V 10A 70W N-DARL 160V 8A 100W 20MHz N-DARL+D 60V 2A 1.2W N-DARL+D 80V 4A 30W SI-N 200V 4.5A 30W 10MHz N-DARL+D 120V 1.5A 0.9W SI-N 60V 0.1A 0.4W 150MHz SI-N 60V 1A 1W 200MHz

2SD1996 2SD2006 2SD2010 2SD2018 2SD2061 2SD2088 2SD213 2SD2137A 2SD2144 20MHz 2SD2159 2SD2253 2SD2276 2SD234 2SD2375 2SD2389 55MHz 2SD2394 2SD2399 2SD2493 2SD2499 2SD313 2SD350 2SD359 2SD381 2SD386 2SD401 2SD415 2SD438 2SD468 2SD476 2SD545 2SD552 2SD555 2SD560 2SD592 2SD600K 2SD612 2SD617 2SD661 2SD666 2SD669A 2SD712 2SD718 2SD726 2SD732 2SD762 2SD768 2SD774 2SD786 2SD788 80MHz 2SD794 2SD798 2SD800

SI-N 25V 0.5A 0.6W 200MHz SI-N 80V 0.7A 1.2W 120MHz N-DARL 60V 2A 1.2W B>1000 N-DARL+D 60V 1A 5W B>6K5 SI-N 80V 3A 30W 8MHz N-DARL+D 60V 2A 0.9W B>2K SI-N 110V 10A 100W SI-N 80V 3A 15W 30MHz SI-N 25V 0.5A B>560

| | | | | | | | |

2SD200 2SD2007 2SD2012 2SD2052 2SD2066 2SD2125 2SD2136 2SD2141 2SD2151

SI-N 1500V 2.5A 10W SI-N 40V 2A 1.2W 100MHz SI-N 60V 3A 25W 3MHz SI-N 150V 9A 100W 20MHz SI-N 160V 12A 120W SI-N+D 1500V 5A 50W 0.2us SI-N 60V 3A 1.5W 30MHz N-DARL+D 380V 6A 35W B>15 SI-N 130/80V 10A 30W

SI-N 30V 2A 1W 110MHz SI-N+D 1700V 6A 50W N-DARL 160V 8A 120W B>5K SI-N 60V 3A 25W AF-POWER SI-N 80V 3A 25W B>500 N-DARL 160V 10A 100W B>5K

| | | | | |

2SD2250 2SD2255 2SD2331 2SD2340 2SD2386 2SD2390

N-DARL 160V 7A 90W B>5K N-DARL 160V 7A 70W 20MHz N-DARL+D 1500V 3A SI-N 130V 6A 50W N-DARL 140V 7A 70W B>5K N-DARL 160V 10A 100W

SI-N 60V 3A 30W N-DARL+D 80V 4A 30W B=1KN-DARL 110V 6A 60W 60MHz SI-N+D 1500V 6A 50W SI-N 60V 3A 30W 8MHz SI-N 1500V 5A 22W SI-N 40V 2A 10W LOWFREQPO SI-N 130V 1.5A 20W 60MHz SI-N 200V 3A 25W 8MHz SI-N 200V 2A 20W 10MHz SI-N 120/100V 0.8A 10W SI-N 100V 0.7A 0.9W 100MHz SI-N 25V 1A 0,9W 280MHz SI-N 70V 4A 40W 7MHz SI-N 25V 1.5A 0.5W SI-N 220V 15A 150W 4MHz SI-N 400V 15A 200W 7MHz N-DARL 100V 5A 30W SI-N 30V 1A 0.75W 200MHz SI-N 120V 1A 8W SI-N 25V 2A 10W 100MHz N-DARL 120V 8A 100W SI-N 35V 0.1A 0.4W 200MHz SI-N 120V 0.05A 140MHz SI-N 160V 1.5A 1W 140MHz SI-N 100V 4A 30W 8MHz SI-N 120V 8A 80W 12MHz SI-N 100V 4A 40W 10MHz SI-N 150V 8A 80W 15MHz SI-N 60V 3A 25W 25kHz N-DARL+D 120V 6A 40W B>1K SI-N 100V 1A 1W 95MHz SI-N 40V 0.3A 0.25W SI-N 20/20V 2A 0.9W 100MHz

| | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |

2SD2395 2SD2438 2SD2498 2SD287 2SD325 2SD350A 2SD361 2SD382 2SD400 2SD414 2SD424 2SD467 2SD471 2SD478 2SD549 2SD553 2SD556 2SD571 2SD596 2SD602A 2SD613 2SD637 2SD662 2SD667 2SD676 2SD717 2SD725 2SD731 2SD734 2SD763 2SD773 2SD781 2SD787 2SD789

SI-N 50V 3A 25W N-DARL+D 160V 8A 70W B>5K SI-N 1500V 6A 50W SI-N 200V 10A 100W 8MHz SI-N 35V 1.5A 10W 8MHz SI-N 1500V 5A 22W SI-N 60V 1.5A 10W 70MHz SI-N 130V 1.5A 20W 60MHz SI-N 25V 1A 0.9W SI-N 120/80V 0.8A 10W SI-N 160V 15A 150W POWER SI-N 25V 0.7A 0.5W 280MHz SI-N 30V 1A 0.8W UNI (EBC SI-N 200V 2A 30W N-DARL 30V 1.5A 15W B>4K SI-N 70V 7A 40W 10MHz SI-N 120V 15A 120W 8MHz SI-N 60V 700mA 1W 110MHz SI-N 30V 0.7A 170MHz SI-N 60V 0.5A 0.2W 200MHz SI-N 100V 6A 40W 15MHz SI-N 60V 0.1A 0.4W 150MHz SI-N 250V 0.1A 0.6W 50MHz SI-N 120V 1A 140MHz SI-N 160V 12A 125W 8MHz SI-N 70V 10A 80W 0.3us SI-N 1500V 6A 50W POWER SI-N 170V 7A 80W 7MHz SI-N 25V 0.7A 0.6W 250MHz SI-N 120V 1A 0.9W SI-N 20V 2A 1W 110MHz SI-N 150V 2A 1W 0.6us SI-N 20V 2A 0.9W 80MHz SI-N 100/50V 1A 0.9W

SI-N 70V 3A 10W 60MHz N-DARL 600V 6A 30W B>1K5 SI-N 750V 4A 30W 8MHz

| 2SD795 | 2SD799 | 2SD809

SI-N 40V 3A 20W 95MHz N-DARL+D 400V 6A 30W SI-N 100V 1A 10W 85MHz

2SD819 2SD822 2SD829 2SD844 2SD856 2SD864K 2SD871 2SD880 2SD889 2SD894 2SD917 2SD921 2SD947 2SD958 2SD966 2SD970 2SD982 2SD998 2SJ109 2SJ117 2SJ174 2SJ177 2SJ200 2SJ306 2SJ353 2SJ72 2SJ77 2SK1010 2SK1057 2SK107 2SK1081 2SK1101 2SK1113 2SK1118 2SK1120 2SK1170 2SK1181 2SK1191 2SK1213 2SK1221 2SK1257 2SK1275 2SK1299 2SK1338 2SK1342 2SK1350 2SK1356 2SK1358 2SK1377 2SK1379 2SK1400 2SK1419 2SK1444 2SK1460 2SK1462

SI-N 1500V 3.5A 50W SI-N 1500/600V 7A 50W N-DARL+D 150V 15A 100W B= SI-N 50V 7A 60W 15MHz SI-N 60V 3A 35W POWER N-DARL+D 120V 3A 30W SI-N+D 1500V 5A 50W SI-N 60V 3A 30W 0.8us SI-N+D 1500V 4A 50W N-DARL 30V 1.5A 10W 120MHz SI-N 330V 7A 70W POWER N-DARL 200V 5A 80W B>700 N-DARL 40V 2A 5W 150MHz SI-N 120V 0.02A 0.4W 200MHz SI-N 40V 5A 1W 150MHz N-DARL+D 120V 8A 40W B>1K N-DARL 200V 5A 40W B=3000 N-DARL 100V 1.5A 10W B=7K P-FET DUAL 30V Id>2.6mA P-FET 400V 2A 40W 35ns P-FET 60V 20A 75W 235ns P-FET 60V 20A 75W 4MHz SI-N 100V 15A 117W 1MHz SI-N 180V 15A 115W >10MHz SI-N 100V 15A 115W >8KHz SI-N 120V 10A 60W 0.35us SI-N 220V 50mA 0.3W SI-N 30V 0.2W 800MHz VHFSI-N 50V 20mA 550MHz SI-N 40V 0.2W 600MHz SI-N 40V 25mA 0.23W

BF455 BF462 BF472 BF487 BF494 BF496 BF507 BF516 850MHz BF585 BF622 BF680 BF689K BF759 1.8GHz BF770A BF799 BF820 BF840 >50MHz BF859 BF872 BF883S BF910 BF939 BF960 BF964 BF966S BF968 BF979 BF981 BF989 BF991 BF994S BF998 300MHz BFG135 BFG65 BFG96 BFQ10 BFQ232 BFQ235A BFQ252A BFQ255A BFQ262A 12.5GHz BFQ34 BFQ65 BFR29 BFR36 1.4GHz BFR38 BFR40 BFR84 BFR90A

AM/FM-V/M/O 400MHz SI-N 350V 0.5A 10W 45MHz SI-P 300V 30mA 2W 60MHz SI-N 400V 0.05A 0.83W SI-N 20V 30mA 260MHz SI-N 30V 20mA 0.3W 550MHz SI-N 30V 20mA 0.5W >750MHz SI-P 35V 20mA 850MHz

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BF459 BF471 BF479 BF493 BF495C BF506 BF509 BF569

SI-N SI-N SI-P SI-P SI-N SI-P SI-P SI-P

300V 0.1A 10W 90MHz 300V 0.1A 2W 60MHz 30V 50mA .16W 1.4GHz 300V 0.5A 0.625W 30V 30mA 200MHz 0.3W 40V 30mA 0.3W 550MHz 40V 30mA 0.3W 750MHz 40V 30mA 280mW

SI-N SI-N SI-P SI-N SI-N

350V 0.05A 5W 70MHz 250V 0.1A 2W 40V 30mA .16W 750MHz 25V 25mA 0.36W 0.2GHz 350V 0.5A 10W VID-PO

| | | | |

BF587 BF679 BF689 BF758 BF763

SI-N SI-P SI-N SI-N SI-N

400V 0.05A 5W >70MHz 40V 30mA .16W 880MHz 15V 25mA 0.2W 1GHz 300V 0.5A 2W 15V 25mA 0.36W

SI-N SI-N SI-N SI-N

15V 0.05A 5.5 GHZ 30V 35mA 280mW 800MHz 300V 25mA >60MHz 40V 25mA 0.28W 380MHz

| | | |

BF791 BF819 BF821 BF844

SI-P SI-N SI-P SI-N

300V 250V 300V 450V

SI-N 300V 0.1A 2.5W SI-P 300V 0.1A 1.6W 60MHz SI-N 275V 0.05A 7W >60MHz N-FET-DG 20V 50mA 0.33W SI-P 30V 220mA 750MHz .25 N-FET-DG 20V 25mA .8GHz 1 N-FET-DG 20V 30mA .2GHz 2 N-FET-DG 20V 30mA .2W .8GHz SI-P UHF TRANS. 1100MHz SI-P 20V 50mA 0.3W 1.75GHz N-FET-DG 20V 20mA VHF N-FET 20V 30mA 0.2W N-FET-DG 20V 20mA UHF N-FET-DG 20V 30mA 200MHz N-FET-DG 12V 30mA 800MHz

| | | | | | | | | | | | | | |

BF871 BF881 BF891 BF926 BF959 BF961 BF966 BF967 BF970 BF980A BF982 BF990A BF992 BF996S BF999

SI-N 300V 0.1A 1.8W SI-N 400V 0.03A >60MHz SI-P 400V 30mA 100MHz 30mA 5GHz 19.5dB 50mA 5GHz 18dB

20mA 0.2W 1GHz 1A 0.8W >100MHz 20V 50MA 0.3W 30mA 5.5GHz 16dB

0.1A 0.1A 25mA 0.3A

5W 1.2W 0.31W 625mW

4W 175MHz 1 4.5W 4GHz 4.9GHz 14dB 0.25W

BFR91A BFR92A BFR93A 3.5GHz BFR96 BFS17 BFS20 BFS23A BFT43 70MHz BFT66 BFT95 BFW11 BFW16A BFW30 150MHz BFW44 BFW92A BFX37 BFX40 BFX55 BFX89 BFY50 BFY52 BFY64 BFY90 BGY88 BLW32 BLX15 BLY88C BLY93C BS107 BS170 BS250 BSN274 BSR14 BSR50 BSS123 BSS44 BSS68 BSS91 BSV52 BSV81 BSW68A BSX20 BSX29 BSX47 BSX59 BSY56 BU106 BU109 BU124A 100MHz BU128 BU1506DX

SI-N 12V 50mA 6GHz 14dB SI-N 15V 30mA 5.5GHz 16dB SI-N 15V 50mA 6GHz 14dB

| BFR92 | BFR92R | BFR95

SI-N 15V 30mA 5GHz 19.5dB SI-N 15V 30mA 5GHz REVERS SI-N 25V 0.15A 1.5W


| | | | |

BFR96S BFS19 BFS22A BFT25 BFT45

SI-N SI-N SI-N SI-N SI-P

SI-N 15V 30mA 4.5GHz 12dB SI-P UHF 15V 25mA 3.6-5GHz N-FET 30V 10mA AMPL. SI-N 25V 0.3A 1.5W 1.2GHz SI-N 10V 0.1A 0.25W 1.6GHz

| | | | |

BFT79 BFW10 BFW12 BFW17A BFW43

SI-P 90V 1A 0.8W >100MHz N-FET 30V 20mA AMPL. N-FET 30V 5mA AMPL. SI-N 25V 0.3A 1.5W 1.1GHz SI-P 150V 0.1A 0.4W

SI-P 150V 0.1A 0.7W 50MHz SI-N 15V 25mA 3.2GHz 13dB SI-P 90V 0.1A 0.36W 70MHz SI-P 75V 1A 0.8W B>85 SI-N 60V 0.4A 2.2W 700MHz SI-N 15V 50mA 0.2W 1.3GHz SI-N 80V 1A 0.7W 55/175ns SI-N 40V 1A 0.8W 100MHz SI-P 40V 0.6A 0.7W SI-N 15V 25mA 2GHz 8dB CATV AMP. 450MHz 35dB SI-N 50V 0.65A 10W 3.5GHz SI-N 110V 6.5A 195W 275MHz SI-N 18V 3A 36W 850MHz SI-N 65V 2A 25W 175MHz N-FET 200V 0.13A 0.8W 26R N-FET 60V 0.3A 0.8W 5R P-FET 45V 0.18A 0.83W N-FET 270V 0.25A 1W 2.5MHz 1000V 10A 100W 800V 2A 40W 0.4us

BUX85 BUX86P BUX87P BUX98A BUY18S 90MHz BUY49P BUY69A BUY71 BUY89 BUZ100 BUZ11A BUZ15 BUZ21 BUZ22 BUZ310 BUZ326 BUZ332 BUZ338 BUZ345 BUZ380 BUZ50A BUZ71AF BUZ72AF BUZ73A BUZ900 BUZ905 BUZ90A BUZ91A CA3018 D44H8 DTA114EK DTA114TL DTA124ES DTA143EK DTA144EK DTA144TS DTC114TS DTC124EK DTC143EK DTC143TS DTC144EK DTC144EU DTC144WS FT5754M GD243 GT20D201 HPA100R IR2403 IRF120 IRF230 IRF250 IRF340 IRF440 IRF520


1000V 2A 40W 0.4us 800V 0.5A 20W 0.4us 1000V 0.5A 20W 0.4us 450V 30A 250W 80/40V 10A 20W

| | | | |

BUX85F BUX87 BUX88 BUX98C BUY47


1000V 2A 18W 0.4us 1000V 0.5A 20W 0.4us 1500V 12A 160W 7MHz 1200V 30A 250W 5MHz 150/120V 7A 10W

SI-N 250V 3A 10W SI-N 1000V 10A 100W 1us SI-N 2200V 2A 40W HORDEFL SI-N 1500V 6A 80W N-FET 50V 60A 250W 0.18E N-FET 50V 27A 90W 0.055R N-FET 50V 45A 125W N-FET 100V 21A N-FET 100V 34A 125W 0.055 N-FET 1000V 2.5A 75W fREF (fRX is leading), the output is negative pulse state 10 PDR - If fRX < fREF (fRX is lagging), the output is positive pulse state - If fRX = fREF (the same phase), the output is high impedance state · This output terminal offers the state of internal RX channel counter operation. If this pin 11 PWDRX state is high, internal RX channel counter is operating in power saving mode. So, this pin can be used in appling the power switch on / off control. 12 VDD Power supply input terminal 13 PWDTX 14 TIF

If this pin state is high, internal TX channel counter is operating in power saving mode. So, this pin can be used in appling the power switch on / off control. · Usually, AC coupled output signal of VCO loop is introduced and the Minimum input signal level is 300mVp-p at 60 MHz

15 PDT

16 LDT

· There are 3 - kind output signal states in PDT pin. - If fTX > fREF (fTX is leading), the output is negative pulse state - If fTX < fREF (fTX is lagging), the output is positive pulse state - If fTX = fREF (the same phase), the output is high impedance state · Output terminal of lock detection waveforms This output pin is internally connected with TX - loop. High output state in LDT pin indicates out of internal operation.


LA1178M Balanced RF Amplifier Mixer and Oscillator

Functions: Double end type mixer Oscillator Oscillator buffer Wide-band AGC circuit IF amplifier Features: Excellent intermodulation characteristic (wide-band AGC circuit) On-chip local oscillation buffer for electronic tuning.


LA1231N FM IF-Amplifier and Discriminator

Function: IF Amplification, Limiter Quadrature Detector AF Preamplifier Muting at Weak Input Muting at the Detuning Signal Meter Drive Output AFC Tuning Meter Drive Output Delay AGC Output Inverting Circuit for Muting Drive Voltage IF Amplifier Stop Circuit Features: High Limiting Sensitivity: 18µV Typ. Low Dostortion: 0.05% Typ. Determined by the Linearity of Phase Characteristics in Phase Shifting Circuit High Demodulation Output: 330mVrms Typ. High S/N ratio: 78.5dB Typ. Muting at Detuning with Little Shock Noise

Single Meter Drive Output Proportional with the Input Signal Level dB Detuning Muting Band having Good Symmetrics Tuning Meter Driving Output having Wide Swing Width Delay AGC Drivce Output for Front End Constant Voltage Circuit is Built-In: Operating Voltage range = 9V to 14V Muting Characteristics between Adjacent Stations are Distinguished Pin

Name

Description

1

Front End

2 3 4

Front End Front End Ground

5 6 7 8 9 10 11

Mute Switch AF Output AF C/V ref. Detector trans. Detector Trans. Detector Trans. Positive Supply Voltage

12 13 14 15 16

Mute Switch Signal Meter Ground AGC Mute Level Adjust


LA4201 Audio Power Amplifier LA4201 is similar to SK7799

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14

Name Vcc

Description Positive Supply Voltage Boostrap Filter Ripple

Decoupling

Audio Input

GND

Ground Audio Output


LA4260 Power Amlifier

2 x 2,5 Watt in two-channel Pin 1 2 3 4 5 6 7 8 9 10

Name

GND

GND Vcc

Description Feedback 1 Input 1 Decoupling Ground Input 2 Feedback 2 Output 2 Ground Positive Supply Voltage Output 1


LA4446 STK4241 2x5,5 Watt Power Amlifier

2 x 5,5 Watt in two-channel mode Pin

Name

Description

1 2

In2 DC

Input 2

3 4 5 6 7

NF2 GND BS2 Out2 VCC

8 9 10

Out1 BS1 GND

11 12

NF1 GND

Ground

13

In1

Input 1

Ground Output 2 Supply Voltage Output 1 Ground


LA4485 Power Amlifier

2 x 5 Watt in two-channel mode 15 Watt in BTL mode (Bridge) Pin

Name

Description

1 2 3 4

CH1 IN CH2 IN SS GND BTL IN

Channel 1 input Channel 2 input Small-signal ground BTL-mode feedback input

5 6 7 8 9

BTL OUT FILTER LS Vcc SS Vcc STADBY

BTL-mode feedback output Filter capacitor connection Large-signal supply Small-signal supply Stanby control input

10 11

MUTE CH2 OUT

Mute control input Channel 2 output

12 13

LS GND CH! OUT

Large-signal ground Channel 1 out


Dual Operational Amplifiers

The NJM4558S / LA6458S consists of two independent, internally phase compensated operational amplifiers. Application areas include active filters, audio preamplifiers, and various electronic circuits.


LC5121 PLL Frequency Synthesizer

Overview This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The LC7185-8750 incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. The controller handles the PLL circuitry, frequency data ROM, channel preset/recall RAM, and LED display driver. It also supports channel preset/recall, and emergency channel call. This PLL-circuit use a ROM programmable divide-by-N counter. The ROM-table is programmed from factory. Pin

Name

Description

1 2 3 4 5 6 7 8

SA SB SC SD SE SF SG Vss

Display Segment A Display Segment B Display Segment C Display Segment D Display Segment E Display Segment F Display Segment G Ground

9 10 11 12

XO XI GND F in

X-tal Output X-tal Input Ground VCO Frequency Input

13 14 15 16 17 18 19 20 21 22

Vcc AO AI DO LD T/R EMG U/D RFST DI

Positive Voltage Supply Loop filter Amplifier Output Loop filter Amplifier Input Phase Detector Output Loop Detected Transmit / Receive Channel 9 Program UP / Program DOWN Display Segment Select output

Explanation of pin function terms



Overview This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 9 bit ROM programmable divide-by-N counter to divide from N=150 to N=194. The ROM-table is programmed from factory to 40 channels CEPT. Pin 1 2 3 4 5 6 7 8 9 10 11

Name Vcc F in RB RI RO

Description

AO

Positive Supply Voltage VCO Frequency Input Oscillator Output (ÿÿ\-ered) X-tal Input X-tal Output Connect to Vcc Loop filter Amplifier Output

AI PD LD P9

Loop filter Amplifier Input Phase Detector Output Loock Detector - Locked=HIGH Unlocked=LOW Programmable input 9

12 13

P8 P7

Programmable input 8 Programmable input 7

14 15 16 17 18

P6 P5 P4 P3 P2

Programmable input 6 Programmable input 5 Programmable input 4 Programmable input 3 Programmable input 2

19 20

P1 GND

Programmable input 1 Ground



LC7113 PLL Frequency Synthesizer Overview This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 6 bit BCD binary programmable divide-by-N counter. N-codes are 64+N or 128+N.

Pin 1 2 3 4

Name Vcc F in 1/2R RI

Description Positive Supply Voltage VCO Frequence Input Reference oscillator output divided by 2 X-tal Input

5 6 7 8 9 10 11 12

RO FS PD LD P7 P6 P5 P4

X-tal Output Function Select - HIGH=Divided by 1024 LOW=Divided by 1152 Phase Detector Output Loock Detector - Locked=HIGH Unlocked=LOW Programmable input 7 HIGH=N-codes is 64+N LOW=N-codes is 128+N Programmable input 6 Programmable input 5 Programmable input 4

13 14 15

P3 P2 P1

Programmable input 3 Programmable input 2 Programmable input 1

16

GND

Ground




Overview This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 6 bit ROM programmable divide-by-N counter. The ROM-table is programmed from factory. Pin 1 2 3 4 5 6 7

Name P1 P2 P3 P4 P5 P6 IFS

Description Programmable input 1 Programmable input 2 Programmable input 3 Programmable input 4 Programmable input 5 Programmable input 6 IF Select - HIGH=10.695MHz LOW=9.785MHz

8 9 10 11

T/R Vcc RI RO

Transmit=LOW Receive=HIGH Positive Supply Voltage X-tal Input X-tal Output

12 13

RB 1/2R

Oscillator Output (Buffered) Referency oscillator output divided by 2

14 15 16 17 18

F in LD2 LD1 PD AI

VCO Frequency Input Loock Detector 2 Loock Detector 1 Phase Detector Output Loop filter Amplifier Input

19 20

AO GND

Loop filter Amplifier Output Ground



LC7130, LC7131, LC7135, LC7136 and LC7137 PLL Frequency Synthesizer

Overview This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 6 bit ROM programmable divide-by-N counter. The ROM-table is programmed from factory. Pin

Name

Description

1 2 3 4 5 6 7 8

P1 P2 P3 P4 P5 P6 Test CH19

Programmable input 1 Programmable input 2 Programmable input 3 Programmable input 4 Programmable input 5 Programmable input 6 Connect to GND Called channel 19 when pins are HIGH

9 10 11 12

CH9 MC RI RO

Called channel 9 when pins are HIGH X-tal Input X-tal Output

13 14 15 16 17 18 19 20

GND LD PD AI AO Vcc F in T/R

Ground Locked=HIGH Unlocked=LOW Phase Detector Output Loop filter Amplifier Input Loop filter Amplifier Output Positive Supply Voltage VCO Frequency Input Transmit=LOW Receive=HIGH


Programming Chart for LC7130/LC7131/LC7132 RX Divided by

Channel 1 2 .. 22 .. 40

3254 3256 .... 3306 .... 3342

TX Divided by 3345 3347 .... 3397 .... 3433

NOTES: 1. 91-count upshift on TX provides 455kHz offset for receiver IF mixing. 2. Reference and Programmable Dividers use 5kHz steps. Example of VCO Determination, Channel 1: 3254 x 5kHz = 16.270MHz (RX-Mode) 3345 x 5kHz = 16.725MHz (TX-Mode)

Programming Chart for LC7136/LC7137 RX Divided by

Channel 1 2

3381 3383

TX Divided by 2760 2761

.. 40

.... 3459

.... 2799

NOTES: 1. Referency and Programmable Dividers use 5kHz steps. 2. TX VCO frequency is doubled to provide direct on-channel frequency. Example of VCO Determination, Channel 1: 3381 x 5kHz = 16.905MHz (RX-Mode) 2760 x 5kHz = 13.800MHz (TX-Mode) (13.800MHz x 2 = 27.600MHz + 1.25kHz tuned offset = 27.60125MHz)



Overview This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 8 bit ROM programmable divide-by-N counter. The ROM-table is programmed from factory. Pin

Name

Description

1 2 3 4 5 6 7 8

P1 P2 P3 P4 P5 P6 P7 P8

Programmable input 1 Programmable input 2 Programmable input 3 Programmable input 4 Programmable input 5 Programmable input 6 Programmable input 7 Programmable input 8

9 10 11 12

CH9 Test RI RO

Called channel 9 when pins are HIGH Connect to GND X-tal Input X-tal Output

13 14 15 16 17 18 19 20

GND LD PD AI AO Vcc F in T/R

Ground Locked=HIGH Unlocked=LOW Phase Detector Output Loop filter Amplifier Input Loop filter Amplifier Output Positive Supply Voltage VCO Frequency Input Transmit=LOW Receive=HIGH TRUTH TABLE P1 P2 P3 P4 P5 P6 P7 P8 Channel 1 1 1 1 0 1 1 1 1 1 1 0 0 0 1 0 0 0 1 1 1 0 0 0 1 0 0

0 0 1 0 0 0 0 0 0 1 0 0 1 0 0 0 0 0

0 0 0 0 0 1 0 0 1 1 0 0 0 0 0 1 0 0

0 1 1 1 0 1 0 1 0 1 0 1 1 1 0 1 0 1

0 0 0 1 1 0 0 0 0 0 0 0 0 1 1 0 0 0

1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 0 0

1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1

1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1

2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

0 1 1 1

0 1 0 0

1 1 0 0

0 1 0 1

0 0 0 0

1 1 1 1

0 0 0 0

1 1 1 1

20 21 22 23

0 0 0 1 0 0 0 1 1 1 0 0

1 0 0 0 0 0 0 1 0 0 1 0

0 0 0 1 0 0 1 1 0 0 0 0

1 1 0 1 0 1 0 1 0 1 1 1

0 1 1 0 0 0 0 0 0 0 0 1

1 1 1 1 1 1 0 0 0 0 0 0

0 0 0 0 0 0 0 0 0 0 0 0

1 1 1 1 1 1 1 1 1 1 1 1

24 25 26 27 28 29 30 31 32 33 34 35

0 1 0 0 0

0 0 0 0 0

0 1 0 0 1

0 1 0 1 0

1 0 0 0 0

0 0 0 0 0

0 0 0 0 1

1 1 1 1 0

36 37 38 39 40



LC7185 PLL Frequency Synthesizer This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The specifications are suited for use in U.S.A.(FCC). The LC7185-8750 incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. The controller handles the PLL circuitry, frequency data ROM, channel preset/recall RAM, and LED display driver. It also supports channel scan, channel preset/recall, and emergency channel call.

Pin 1 2

Name SA SB

Description Display Segment a Display Segment b

3 4 5 6 7 8 9 10 11 12 13 14

SC SD SE SF SG D1 D2 KI1 KI2 KI3 KI4 KO1

Display Segment c Display Segment d Display Segment e Display Segment f Display Segment g

15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30

KO2 KO3 BEEP UL XOUT XIN Vss2 TEST PIN GND INIT HOLD PD Vss1 NC TX

Keyboard Out 2 Keyboard Out 3

Keyboard In 1 Keyboard In 2 Keyboard In 3 Keyboard In 4 Keyboard Out 1

X-tal Out X-tal In

Ground

No Connection



LC7232 LC72322 Single-Chip Microcontroller with Built-In LCD Driver and PLL Circuits Overview The LC7232/LC72322 is a single-chip microcontroller for use in electronic tuning applications. It includes on chip both LCD drivers and a PLL circuit that can operate at up to 150 MHz. It features a large-capacity ROM, a highly efficient instruction set, and powerful hardware. Stack: Eight levels Fast programmable divider General-purpose counters: HCTR for frequency measurement and LCTR for frequency or period measurement LCD driver for displays with up to 56 segments (1/2 duty, 1/2 bias) Program memory (ROM): 4 k words by 16 bits Data memory (RAM): 256 4-bit digits All instructions are single-word instructions Cycle time: 2.67 µs, 13.33 µs, or 40.00 µs (option) Unlock FF: 0.55 µs detection, 1.1 µs detection Timer FF: 1 ms, 5ms, 25ms, 125ms Input ports*: One dedicated key input port and one high-breakdown voltage port Output ports*: Two dedicated key output ports, one high-breakdown voltage open-drain port Two CMOS output ports (of which one can be switched to be used as LCD driver outputs) Seven CMOS output ports (mask option switchable to use as LCD ports) I/O ports*: One switchable between input and output in four-bit units and one switchable between input and output in one-bit units Note: * Each port consists of four bits. Program runaway can be detected and a special address set (Programmable watchdog timer). Voltage detection type reset circuit One 6-bit A/D converter Two 8-bit D/A converters (PWM) One external interrupt Hold mode for RAM backup Sense FF for hot/cold startup determination PLL: 4.5 to 5.5 V CPU: 3.5 to 5.5 V

RAM: 1.3 to 5.5 V 80-pin QIP

SY202 General programming guidance of LC7232 devices with Seung Yong CPU SYSTEM SY202. The processors SYSTEM 202 with label Seung Yong are customized mask-programmed CPU's on base of the LC 72322 CPU from Sanyo. Those in the following specified possibilities apply only to CPU's with the above Seung Yong designation and not to others! Programming are those pin 32, 33, 34, 35 of the CPU. The indicated bridges must be manufactured from the links indicated in each case to +5 Volt or GND. Consider please: With 120 to 400 channel programming must be in the device absolutely the EMG/CH 9-Taste wired, because this becomes with many channel operation automatically the BAND selection button!

SY202 Block Diagram

SY203 General programming guidance of LC7232 devices with Seung Yong CPU SYSTEM SY203. The processors SYSTEM 202 with label Seung Yong are customized mask-programmed CPU's on base of the LC 7232 CPU from Sanyo. Those in the following specified possibilities apply only to CPU's with the above Seung Yong designation and not to others! Programming are those pin 33, 34, 35 of the CPU.

The indicated bridges must be manufactured from the links indicated in each case to +5 Volt or GND.

SY203 Block Diagram

SY204 General programming guidance of LC7232 devices with Seung Yong CPU SYSTEM SY204. The processors SYSTEM 204 with label Seung Yong are customized mask-programmed CPU's on base of the LC 72322 CPU from Sanyo. Those in the following specified possibilities apply only to CPU's with the above Seung Yong designation and not to others!

SY204 Block Diagram


LM386 Audio Power Amplifier Similar to NJM386

Low Voltage Audio Power Amplifier Pin 1 2 3 4 5 6 7 8

Name

GND Vcc

Description Gain set Inverting Input Non Inverting Input Ground Output Positive Voltage Input Bypass Gain set


NE592 LM733 Video Amplifier

General Description The LM733/LM733C is a two-stage, differential input, differential output, wide-band video amplifier. The use of internal series-shunt feedback gives wide bandwidth with low phase distortion and high gain stability. Emitter-follower outputs provide a high current drive, low impedance capability. Its 120 MHz bandwidth and selectable gains of 10, 100 and 400, without need for frequency compensation, make it a very useful circuit for memory element drivers, pulse amplifiers, and wide band linear gain stages. Features: 120 MHz bandwidth 250 kohm input resistance Selectable gains of 10, 100, 400 No frequency compensation High common mode rejection ratio at high frequencies Applications: Magnetic tape systems Disk file memories Thin and thick film memories Woven and plated wire memories Wide band video amplifiers

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14

NE592N8 Input Gain Select GND Output Output Vcc Gain Select Input

NE592N14 Input NC Gain Select 2 Gain Select 1 GND NC Output Output NC Vcc Gain Select 1 Gain Select 2 NC Output


LM733 Input Input Gain Select 2 Gain Select 1 GND Output Output Vcc Gain Select 1 Gain Select 2

MC1496P Balanced Modulator / Demodulator Similar to LM1396 LM1496 LM1596 uA796 N5596 NJM1496 and SN76514

The MC1496P are doubled balanced modulator-de-modulators which produce an output voltage proportional tothe product of an input (signal) voltage and a switching (carrier) signal. Typical applications include suppressed carrier modulation, amplitude modulation, synchronous detection, FM or PM detection, broadband frequency doubling and chopping.

- Excellent carrier suppression 65 dB typical at 0.5 MHz 50 dB typical at 10 MHz - Adjustable gain and signal handling - Fully balanced inputs and outputs - Low offset and drift - Wide frequency response up to 100 MHz Pin

Pin

Name

Description

1 2 3 4 5

1 2 3 4 5

SI+ GA GA SIB

Signal input + Gain Adjust Gain Adjust Signal input Bias

6 7 8 9 10 11 12 13 14

6

O+ NC CI+ NC CINC ONC GND

Output + No Connection Carrier In + No Connection Carrier In No Connection Output No Connection Ground

7 8 9 10


LM2111M ULN2111N SN76643N MC1357P FM IF-Amplifier and Discriminator

Pin

Name

Description

1 2 3 4 5 6

Audio Output Detector Input Ref. No Connection IF Input Decoupling IF Input Ref.

7 8 9 10 11

Ground No Connection Amplifier Low Output Amplifier Output Test

12 13 14

Detector Input Positive Supply Voltage De-Emphasis


LM2113M ULN2113N SN76642N FM IF-Amplifier and Discriminator

Description: The LM2113N is a monolithic integrated circuit in a 14-Lead DIP type package providing a multi-stage wideband amplifier/limiter, an FM quadrature detector, and an emmitter-follower audio output stage and is designed for use in FM receivers or in sound IF of TV receivers. Features: Good Sensitivity Excellent AM Rejection Low Harmonic Distortion Single-Adjustment Timing High Gain to 50MHz 500mV Recovered Audio at 10.7MHz Wide Operating Voltage Range Pin 1 2

Name

Description Detector Output Reference

3 4 5 6 7 8 9 10 11 12 13 14

No Connection IF Input Decoupling IF Input Ref. Ground No Connection Amplifier Low Output Amplifier Output Test Detector Input Positive Supply Voltage De-Emphasis


LM3189 FM IF

LM3189 FM IF System General Description: The LM3189N is a monolithic integrated circuit that provides all the functions of a comprehensive FM IF system. The block diagram of the LM3189N includes a three stage FM IF amplifier/limiter configuration with level detectors for each stage, a doubly balanced quadrature FM detector and an audio amplifier that features the optional use of a muting (squelch) circuit. The advanced circuit design of the IF system includes desirable deluxe features such as programmable delayed AGC for the RF tuner, an AFC drive circuit, and an output signal to drive a tuning meter and/or provide stereo switching logic. In addition, internal power supply regulators maintain a nearly constant current drain over the voltage supply range of a8.5V to a16V. The LM3189N is ideal for high fidelity operation. Distortion in an LM3189N FM IF system is primarily a function of the phase linearity characteristic of the outboard detector coil. The LM3189N has all the features of the LM3089N plus additions. Features: Exceptional limiting sensitivity: 12 mV typ at b3 dB point Low distortion: 0.1% typ (with double-tuned coil) Single-coil tuning capability Improved (S a N)/N ratio Externally programmable recovered audio level

Provides specific signal for control of inter-channel muting (squelch) Provides specific signal for direct drive of a tuning meter On channel step for search control Provides programmable AGC voltage for RF amplifier Provides a specific circuit for flexible audio output Internal supply voltage regulators Externally programmable ON channel step width, and deviation at which muting occurs Pin

Name

Description

1

IF Input

2 3

IF In Bypass IF In Bypass

4 5 6 7 8 9

Frame Mute Control Audio Output AFC Output IF Output Quad Input

10 11

Ref Bias Positive Supply Voltage

12 13 14 15 16

Vcc

GND

Mute Logic Tune Meter Ground Delayed AGC AGC


LMX2216 0.1 GHz to 2.0 GHz Low Noise Amplifier/Mixer for RF Personal Communications

General Description The LMX2216 is a monolithic, integrated low noise amplifier (LNA) and mixer suitable as a first stage amplifier and downconverter for RF receiver applications. The wideband operating capabilities of the LMX2216 allow it to function over frequencies from 0.1 GHz to 2.0 GHz. It is fabricated using National Semiconductor's ABiC IV BiCMOS process. All input and output ports of the LMX2216 are single-ended. The LNA input and output ports are designed to interface to a 50Xsystem. The Mixer input ports are matched to 50X. The output port is matched to 200X. The only external components required are DC blocking capacitors. The balanced architecture of the LMX2216 maintains consistent operating parameters from unit to unit, since it is implemented in a monolithic device. This consistency provides manufacturers a significant advantage

since tuning procedures often needed with discrete designsÐcan be reduced or eliminated. The low noise amplifier produces very flat gain over the entire operating range. The doubly-balanced, Gilbert-cell mixer provides good LO-RF isolation and cancellation of second order distortion products. A power down feature is implemented on the LMX2216 that is especially useful for standby operation common in Time Division Multiple Access (TDMA) and Time Division Duplex (TDD) systems. The LMX2216 is available in a narrow-body 16-pin surface mount plastic package. Features : Wideband RF operation from 0.1 GHz to 2.0 GHz No external biasing components necessary 3V operation LNA input and output ports matched to 50X Mixer input ports matched to 50X, output port matched to 200X. Doubly balanced Gilbert cell mixer (single ended input and output) Low power consumption Power down feature Small outline, plastic surface mount package Applications : Digital European Cordless Telecommunications (DECT) Portable wireless communications (PCS/PCN, cordless) Wireless local area networks (WLANs) Digital cellular telephone systems Other wireless communications systems


NE565N M51361P General Purpose Phase Lock Loop (PLL)

Description: The NE565N is a general purpose Phase Lock Loop (PLL) in a 14-Lead DIP type package containing a stable, highly linear voltage controlled oscillator (VCO) for low distortion FM demodulation, and a double balanced phase detector with good carrier suppression. The VCO frequency is set with an external resistor and capacitor, and a tuning range of 10:0 can be obtained with the same capacitor. The characteristics of the closed loop systembandwidth, response speed, capture and pull-in range may be adjusted over a wide range with an external resistor and capacitor. The loop may be broken between the VCO and the phase detector for insertion of a digital frequency divider to obtain frequency multiplication. Features: 200ppm/°C Frequency Stability of the VCO Power Supply Range of ±5V to ±12V with 100ppm/% Typical 0.2% Linearity of Demodulated Output Linear Triangle Wave with in Phase Zero Crossings Available TTL and DTL Compatible Phase Detector Input and Square Wave Output Adjustable Hold in Range from ±1% to > ±60% Applications: Data and Tape Synchronization Modems

FSK Demodulation FM Demodulation Frequency Synthesizer Tone Decoding Frequency Multiplication and Division SCA Demodulators Telemetry Receivers Signal Generators Coherent Demodulators Pin

Name

Description

1 2 3

Negative Supply Voltage Input input

4 5 6 7 8 9 10 11 12 13 14

VCO Output Phase Comparator VCO Input Reference Voltage VCO Control Voltage Timing Resistor Timing Capacitor Positive Supply Voltage No Connection No Connection No Connection No Connection


M54459L Frequency Divider Divided by 20 Divided by 100

Pin

Ground No Connection Mode Select - Divide by 20 / Divide by 100 Input Decoupling No Connection

7

Name GND NC MS I DC NC VCC

8

Out

Output

1 2 3 4 5 6

Description

Positive Supply Voltage - 5 Volt


M54460L Frequency Divider Divided by 10 Divided by 100

Pin

6

Name GND NC MS I DC VCC

7

VREF

8

Out

1 2 3 4 5

Description Ground No Connection Mode Select - Divide by 10 / Divide by 100 Input Decoupling Positive Supply Voltage - 5 Volt Output


M58472P PLL Frequency Synthesizer

Overview This PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 6 bit BCD binary programmable divide-by-N counter.

Down-converting of the frequency to the divider

This PLL Circuit use a Mixer and a X-Tal Oscillator to convert the output frequency f OUT to the f IN to the PLL Circuit. The X-Tal frequency is f XTAL = f OUT - f IN

The output frequency can be changed by changing the mixing-xtal or add a new mixing-xtal to the oscillator.

Pin Name 1 P4 Programmable input 4 2 P5 Programmable input 5 3 4 5 6 7 8 9

P6 F in RI NC LD

10 11 12 13 14 15 16 17 18

FIL PD

GND

NC PS P1 P2 P3 Vcc

Description

Programmable input 6 VCO Frequency Input Referency oscillator Input No Connection Loock Detector Output - Locked=LOW Unlocked=HIGH Connect to GND Ground Phase Detector Output Connect to Vcc No Connection Preset Select - HIGH=147+N LOW=102+N Programmable input 1 Programmable input 2 Programmable input 3 Positive Supply Voltage


M58473P PLL Frequency Synthesizer

Pin 1 2 3 4 5 6 13 7 9 10 11 12 11 12 15 16 17 18

Name P4 P5 P6 F in RI RO NC LD GND FIL PD2

Description Programmable input 4 Programmable input 5 Programmable input 6 VCO Frequency Input Referency oscillator Input Referency oscillator Output No Connection Loock Detector Output - Locked=LOW Unlocked=HIGH Ground

PD1

Phase Detector Output 2 Connect to Vcc Phase Detector Output 1

P1 P2 P3 Vcc

Connect to Vcc Programmable input 1 Programmable input 2 Programmable input 3 Positive Supply Voltage


M58476 NDC40013 PLL Frequency Synthesizer

Overview This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 6 bit BCD binary programmable divide-by-N counter. Pin 1 2 3 4 5 6 7 8 9 10 11

Name Vcc F in RI MC

Description Positive Supply Voltage VCO Frequency Input Reference Oscillator Input

PD LD

Connect to Vcc Phase Detector Output Loop Detect - Unlocked=LOW Locked=HIGH

P7 P6 P5 P4

Programmable input 7 Programmable input 6 Programmable input 5 Programmable input 4

12 13 14 15 16

P3 P2 P1 MS GND

Programmable input 3 Programmable input 2 Programmable input 1 Mode Select - HIGH=10kHz LOW=5kHz Ground


MB3712 5,7 Watt Audio Power Amplifier

Pin 1 2 3 4 5 6 7 8 9

Name

Description

Vcc

Output Positive Supply Voltage

GND

Ground Input

Vcc

Positive Supply Voltage


MB3713 5,7 Watt Audio Power Amplifier

Pin 1 2 3 4 5 6 7 8 9

Name Vcc GND

Vcc

Description Output Positive Supply Voltage 16 Volt Boostrap Ground Offset Adjust Input Bypass Input + Positive Supply Voltage


MB8719 MB8734 RCI8719 PLL Synthesizer

Overview This PLL-circuit use a 6 bit (MB8734 and RCI8719) or 7 bit (MB8719) BCD binary programmable divide-by-N counter.




Pin

Name

Description

1 2 3

Out In Out

Inverter out Inverter in Inverter out

4 5 6

In CP LD

Inverter in Charge Pump Loop Detect

7 8 9 10 11

OSC in OSC out VDD P6 P5

Oscillator input Oscillator output Positive Power Supply Programmable inputs (Binary) (Only MB8719) Programmable inputs (Binary)

12 13 14 15 16 17 18

P4 P3 P2 P1 P0 F in VSS

Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary) Frequency input GND Ground TRUTH TABLE P6 0 0 0

P5 0 0 0

P4 0 0 0

P3 0 0 0

P2 0 0 0

P1 0 0 1

P0 Divide by N 0 0 1 1 0 2

0 0 1

0 0 1

0 0 1

0 0 1

0 1 1

1 0 1

1 0 1

3 4 128


Uniden AM/FM/SSB Chassis


TC9109 and MB8733 PLL Frequency Synthesizer

Overview This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 8 bit ROM programmable divide-by-N counter. The ROM-table is programmed from factory to 40 channels. Pin 1 2 3 4 5 6 7 8

Name Vcc RI CL LD PD AI AO T/R

9 10 11 12

F in P0 P1 P2

Description Positive Supply Voltage Referency Oscillator Input Loop Detect - Unlocked=LOW Locked=HIGH Phase Detector Output Amp. Input Amp. Output Transmit=HIGH Receive=LOW VCO Frequency Input Programmable input 0 Programmable input 1 Programmable input 2

13 14 15 16 17 18

P3 P4 P5 P6 P7 GND

Programmable input 3 Programmable input 4 Programmable input 5 Programmable input 6 Programmable input 7 Ground


Programming Chart for TC9106 RX Divided by

Channel 1 2 .. 40

3254 3256 .... 3342

TX Divided by 5393 5395 .... 5481

NOTES: 1. Spesial divided by 2 circuit in TX mode change Referency Divider output to 2.5kHz steps. The 2139 count upshifts produces a 13MHz VCO witch is then doubled for the direct on-channel TX-frequency. Example of VCO Determination, Channel 1: 3254 x 5kHz = 16.270MHz (RX-Mode) 5393 x 2.5kHz = 134825MHz (TX-Mode) (13.4825MHz x 2 = 26.965MHz)


MB8738 PLL Synthesizer

Overview This PLL-circuit use a 7 bit BCD binary programmable divide-by-N counter.

Pin

Name

Description

1

Vcc


2 3 4 5 6 7 8 9

R Out R Out

Reference Frequency In Reference Frequency Out

F In

Oscillator Frequency Input

10 11 12 13 14 15 16

P P P P P P P

Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary)

17 18

P VSS

Programmable inputs (Binary) GND Ground


MB87014A MB87086A Serial Input PLL Frequency Synthesizer

The MB87014A/MB87086A is a serial data programmable PLL Frequency Syntheseizer. Ratios of reference frequency divider and input frequency divider can be independently set. Pin Name 1 RI Reference X-tal Oscillator Input 2 RO Reference X-tal Oscillator Output

Description

3 4 5 6 7 8 9 10

fv Vcc PD GND LD Fin CL Data

Comparison output Positive Supply Voltage - 5 Volt Phase Detector Output - VCO Voltage Out Ground Loop Detector - Loop Detected=HIGH - Not Detected=LOW VCO Frequency In Clock from CPU Data from CPU

11 12 13

EN DOA fr

Enable from CPU Charge pump output for activ lowpass filter Reference frequency output

14

No Connection

15

NC OV

16

OR

Phase detector output to differential lowpass filter



MC1350P SN76600P SC70231P IF / Video Amplifier

The MC1350 is an integrated circuit featuring wide range AGC for use as an IF amplifier in radio and TV over an operating temperature range of 0° to +75°C. Power Gain: 50 dB Typ at 45 MHZ Power Gain: 50 dB Typ at 58 MHZ AGC Range: 60 dB Min, DC to 45 MHz Nearly Constant Input & Output Admittance over the Entire AGC Range Y21 Constant ( –3.0 dB) to 90 MHz Low Reverse Transfer Admittance: < < 1.0 mmho Typ 12 V Operation, Single–Polarity Power Supply Pin

Name

Description

1 2 3 4

Output Positive Supply Voltage - Max. 18 Volt Ground Input -

5 6 7 8

AGC Input Input + Ground Output


MC2831 / MC2833 Low Power FM Transmitter System

MC2831 / MC2833 is a one-chip FM transmitter subsystem designed for cordless telephone and FM communication equipment. It includes a microphone amplifier, voltage controlled oscillator and two auxilary transistors.


MC3359P FM IF-Amplifier and Discriminator MC3359 is similar to NJM3359

The MC3359 is a low power narrow band FM detector integrated circuit for FM dual conversion of communication equipment. The MC3359 includes oscillator, limiting amplifier, AFC circuit, quadrature detect, operational amplifier, squelch circuit, scan-control and muting switch. The MC3359 is a circuit of MC3357 plus one stage limiting IF amplifier and AFC output terminal. Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17

Name

Vcc

GND

Description X-Tal Oscillator X-Tal Oscillator Mixer Output Positive Supply Voltage Limiter In Decouple Decouple Quad In Demod Filter Audio Output Demodulated output Filter Input Filter Output Squelch In Scan Control Audio Mute Ground

18

RF Input


MC13135/MC13136 FM IF-Amplifier and Discriminator

The MC13135/MC13136 are the second generation of single chip, dual conversion FM communications receivers developed by Motorola. Major improvements in signal handling, RSSI and first oscillator operation have been made. In addition, recovered audio distortion and audio drive have improved. Using Motorola’s MOSAICE 1.5 process, these receivers offer low noise, high gain and stability over a wide operating voltage range. Both the MC13135 and MC13136 include a Colpitts oscillator, VCO tuning diode, low noise first and second mixer and LO, high gain limiting IF, and RSSI. The MC13135 is designed for use with an LC quadrature detector and has an uncommitted op amp that can be used either for an RSSI buffer or as a data comparator. The MC13136 can be used with either a ceramic discriminator or an LC quad coil and the op amp is internally connected for a voltage buffered RSSI output.

These devices can be used as stand–alone VHF receivers or as the lower IF of a triple conversion system. Applications include cordless telephones, short range data links, walkie–talkies, low cost land mobile, amateur radio receivers, baby monitors and scanners. Complete Dual Conversion FM Receiver – Antenna to Audio Output Input Frequency Range – 200 MHz Voltage Buffered RSSI with 70 dB of Usable Range Low Voltage Operation – 2.0 to 6.0 Vdc (2 Cell NiCad Supply) Low Current Drain – 3.5 mA Typ Low Impedance Audio Output < 25 W VHF Colpitts First LO for Crystal or VCO Operation Isolated Tuning Diode Buffered First LO Output to Drive CMOS PLL Synthesizer


MC145104 SM5104 MM55104 MN6040A PLL Frequency Synthesizer





Pin 1 2 3

Name Vcc F in RI

Description Positive Supply Voltage VCO Frequency Input Referency Oscillator Input

4 5 6

RO FS PD

Referency Oscillator Output HIGH=10kHz - LOW=5kHz Phase Detector Output

7 8 9 10 11

LD P7 P6 P5 P4

Loop Detect - Unlocked=LOW Locked=HIGH Programmable input 7 Programmable input 6 Programmable input 5 Programmable input 4

12 13 14 15 16 18

P3 P2 P1 P1 GND FIL

Programmable input 3 Programmable input 2 Programmable input 1 Programmable input 0 Ground



MC145106 MM55106 MM55116 MM55126 PLL Frequency Synthesizer

Overview The MC145106 is a phase–locked loop (PLL) frequency synthesizer constructed in CMOS on a single monolithic structure. This synthesizer finds applications in such areas as CB and FM transceivers. The device contains an oscillator/amplifier, a 1024 or 2048 divider chain for the oscillator signal, a programmable divider chain for the input signal, and a phase detector. The MC145106 has circuitry for a 10.24 MHz oscillator or may operate with an external signal. The circuit provides a 5.12 MHz output signal, which can be used for frequency tripling. A 512 programmable divider divides the input signal frequency for channel selection. The inputs to the programmable divider are standard ground–to–supply binary signals. Pull–down resistors on these inputs normally set these inputs to ground enabling these programmable inputs to be controlled from a mechanical switch or electronic circuitry. The phase detector may control a VCO and yields a high level signal when input frequency is low, and a low level signal when input frequency is high. An out–of–lock signal is provided from the on–chip lock detector with a “0” level for the out–of–lock condition. Single Power Supply Wide Supply Range: 4.5 to 12 V Provision for 10.24 MHz Crystal Oscillator 5.12 MHz Output Programmable Division Binary Input Selects up to N=512 On–Chip Pull–Down Resistors on Programmable Divider Inputs Selectable Reference Divider, 1024 or 2048 (Including ÷ 2) Three–State Phase Detector




Pin

Name

Description

1 2 3 4 5 6 7 8

VDD F in OSC in OSC out F out FS D out LD

Positive Power Supply Frequency input to programmable divider - Max. 3MHz Oscillator input Oscillator output Reference OSC frequency divide by 2 output Reference Oscillator Frequency Division Select. 1=10 kHz, 0=5 kHz Detector output (for control of external VCO) Lock Detector

9 10 11 12 13 14

P8 P7 P6 P5 P4 P3

Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary) Programmable inputs (Binary)

15 16

P2 P1

Programmable inputs (Binary) Programmable inputs (Binary)

17 18

P0 VSS

Programmable inputs (Binary) Ground

Explanation of pin function terms TRUTH TABLE P8 P7 P6 P5 P4 P3 P2 P1 P0 Divide by N 0 0 0 0 0 0 0 0 0 2 0 0 0 0 0 0 0 0 1 3 0 0 0 0 0

0 0 0 0 0

0 0 0 0 0

0 0 0 0 0

0 0 0 0 0

0 0 0 0 0

0 0 1 1 1

1 1 0 0 1

0 1 0 1 0

2 3 4 5 6

0 0 0 1

0 0 1 1

0 0 1 1

0 0 1 1

0 0 1 1

0 1 1 1

1 0 1 1

1 0 1 1

1 0 1 1

7 8 255 511

Uniden AM/FM/SSB Chassis


MC145107 SM5107 MM55107 PLL Frequency Synthesizer

Overview This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 8 bit BCD binary programmable divide-by-N counter. Pin

Name

Description

1 2 3 4 5 6 7 8

Vcc F in RI 1/2 R FS PD LD P7

Positive Supply Voltage VCO Frequency Input Referency Oscillator Input Reference OSC frequency divide by 2 output HIGH=10kHz - LOW=5kHz Phase Detector Output Loop Detect - Unlocked=LOW Locked=HIGH Programmable input 7

9 10 11 12 13

P6 P5 P4 P3 P2


14 15

P1 P1


16

GND

Ground



MC145151 PLL Integrated Circuits

The MC145151–2 is programmed by 14 parallel–input data lines for the N counter and three input lines for the R counter. The device features consist of a reference oscillator, selectable–reference divider, digital–phase detector, and 14–bit programmable divide–by–N counter. Operating Temperature Range: – 40 to 85°C Low Power Consumption Through Use of CMOS Technology 3.0 to 9.0 V Supply Range On– or Off–Chip Reference Oscillator Operation Lock Detect Signal ÷ N Counter Output Available Single Modulus/Parallel Programming 8 User–Selectable ÷ R Values: 8, 128, 256, 512, 1024, 2048, 2410, 8192

÷ N Range = 3 to 16383 “Linearized” Digital Phase Detector Enhances Transfer Function Linearity Two Error Signal Options: Single–Ended (Three–State) or Double–Ended Chip Complexity: 8000 FETs or 2000 Equivalent Gates Pin

Name

Decription

1

FIN

Frequency input - Max. 30MHz

2 3

Ground V+ (5 Volt)

4

GND VDD PDOUT

5 6 7 8 9 10 11

RA0 RA1 RA2 øR øV f>SUB>V P0

Reference divider Program input 0 Reference divider Program input 1 Reference divider Program input 2 Phase Comparator output Phase Comparator output Program divider output Program input 0

12 13 14 15 16 17 18 19 20

P1 P2 P3 P4 P5 P6 P7 P8 P9

Program input 1 Program input 2 Program input 3 Program input 4 Program input 5 Program input 6 Program input 7 Program input 8 Program input 9

21 22 23 24 25 26 27

T/R P12 P13 P10 P11 RO RI

Transmit / Receive Program input 12 Program input 13 Program input 10 Program input 11 Referance Osc. Output Referance Osc. Input

28

LD

Loop Detect Output

Phase Comparator Output



MC145163 PLL Integrated Circuits

The MC145163 is programmed by 16 parallel–input data lines for the N counter and 2 input lines for the R counter. The device features consist of a reference oscillator, selectable–reference divider, digital–phase detector, and 16–bit programmable divide–by–N counter. On– or Off–Chip Reference Oscillator Operation Lock Detect Signal Single Modulus/Parallel Programming 4 User–Selectable ÷ R Values: 512, 1024, 2048, 4096 ÷ N Range = 3 to 9999 Pin

Name

Decription

1

FIN

Frequency input - Max. 30MHz

2

GND

Ground

3 4

VDD PD

V+ (5 Volt) Phase Comparator Output

5 6 7 8 9 10

RA0 RA1 øR øV P0 P1

Reference divider Program input 0 Reference divider Program input 1 Phase Comparator output Phase Comparator output Program input 0 Program input 1

11 12

P2 P3

Program input 2 Program input 3

13 14 15 16 17 18

P4 P5 P6 P7 P8 P9

Program input 4 Program input 5 Program input 6 Program input 7 Program input 8 Program input 9

19 20

P10 P11

Program input 10 Program input 11

21 22 23 24

Program input 12 Program input 13 Program input 14 Program input 15

25

P12 P13 P14 P15 ROUT

26 27 28

RI RO L

Referance Osc. Input Referance Osc. Output Loop Detect Output

Referance Osc. Output



MM55108 PLL Frequency Synthesizer

Overview This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 8 bit BCD binary programmable divide-by-N counter. Pin 1 2 3 4 5 6 7

Name Vcc F in RI RO 1/2R RB PD

Description Positive Supply Voltage VCO Frequency Input Reference Oscillator Input Reference Oscillator Output Reference Oscillator Output divide by 2 Reference Oscillator Output (Buffered) Phase Detector Output

8 9 10 11 12 13 14

LD P8 P7 P6 P5 P4 T/R

Loop Detect - Unlocked=LOW Locked=HIGH Programmable input 8 Programmable input 7 Programmable input 6 Programmable input 5 Programmable input 4 Transmit=HIGH - Receive=LOW

15 16

P3 P2


17 18

P1 GND



MSC42502P PLL Frequency Synthesizer





Pin 1 2 3

Name F in P4 P3

Description VCO Frequency Input Programmable input 4 Programmable input 3

4 5 6

P2 P1 NC

Programmable input 2 Programmable input 1 No Connection

7 8 9 10 11

PD LD GND RI RO

Phase Detector Output Loop Detect - Unlocked=LOW Locked=HIGH Ground Reference Oscillator Input Reference Oscillator Output

12 13 14 15 16

P8 P7 P6 P5 Vcc

Programmable input 8 Programmable input 7 Programmable input 6 Programmable input 5 Positive Supply Voltage


MSM5807 PLL Frequency Synthesizer





Pin Name 1 P5 Programmable input 5 2 P6 Programmable input 6 3 P7 Programmable input 7

Description

4 5 6

P8 FS RI

Programmable input 8 Function Select - HIGH=Divided by 512 LOW=Divided by 1024 Reference Oscillator Input

7 8 9 10 11

RO GND PD LD F in

Reference Oscillator Output Ground Phase Detector Output Loop Detect - Unlocked=HIGH Locked=HIGH VCO Frequency Input

12 13 14 15 16

P1 P2 P3 P4 Vcc

Programmable input 1 Programmable input 2 Programmable input 3 Programmable input 4 Positive Supply Voltage


MSM5907 PLL Frequency Synthesizer

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Name

Description

P4 P5 P6 P7 P8


GND

Ground

F in

VCO Frequency Input

P1 P2 P3 Vcc

Programmable input 1 Programmable input 2 Programmable input 3 Positive Supply Voltage


MWA110 MWA120 MWA130 Wide-Band RF Amplifier

Frequency Range Gain Operating Current Supply Voltage Output Level Noise Figure

MWA110 0,1-400MHz 14dB 10mA 2,9V -2,5dBm 4dB

MWA120 0,1-400MHz 14dB 25mA 5V 8,2dBm 5,5dB


MWA130 0,1-400MHz 14dB 50mA 5,5V 18dBm 7dB

NE602 NE612 SA602A SA612A Balanced RF Amplifier and Oscillator

The SA612A is a low-power VHF monolithic double-balanced mixer with on-board oscillator and voltage regulator. It is intended for low cost, low power communication systems with signal frequencies to 500MHz and local oscillator frequencies as high as 200MHz. The mixer is a “Gilbert cell” multiplier configuration which provides gain of 14dB or more at 45MHz. The oscillator can be configured for a crystal, a tuned tank operation, or as a buffer for an external L.O. Noise figure at 45MHz is typically below 6dB and makes the device well suited for high performance cordless phone/cellular radio. The low power consumption makes the SA612A excellent for battery operated equipment. Networking and other communications products can benefit from very low radiated energy levels within systems. The SA612A is available in an 8-lead dual in-line plastic package and an 8-lead SO (surface mounted miniature package). Pin 1 2 3 4 5 6 7 8

Name

GND

Vcc

Description Input Input Ground Output Output Oscillator Input Oscillator Output Supply Voltage


NE605 NE606 NE616 Low Power Narrowband FM IF with RSSI


NJM2203 Balanced RF Amplifier, Oscillator and Mixer

The NJM2203 is a low-power VHF monolithic double-balanced mixer with on-board Oscillator and Mixer. It is intended for low cost, low power communication systems with signal frequencies to 200MHz. The oscillator can be configured for a crystal, a tuned tank operation, or as a buffer for an external L.O. Noise figure at 100MHz is typically below 6dB and power gain is typical 24dB.


NJM2206 Low Power IF/AF PLL Circuit for Narrow Band FM Receiver

Pin

Name

1 2 3 4 5 6 7 8 9 10 11 12 13 14

Description RF Down Converter X-Tal Input RF Down Converter X-Tal Output Mixer Decouple Mixer Output

NC

No Connection 2nd IF Decouple 2nd IF Output Squelch Output Squelch Adjust AF Output VCO Decouple VCO Decouple Loop Filter Loop Filter

15 16 17 18 19 20

VCO Timing Capacitor VCO Timing Capacitor Vcc GND

Positive Power Supply Vcc Decouple Ground 1st IF Input


Quad Operational Amplifire


Dual Operational Amplifier


PLL03A PLL08A PLL Frequency Synthesizer

Overview This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 7 bit ROM programmable divide-by-N counter. The ROM-table is programmed from factory to 40 channels. Pin

Name

Description

1 2 3 4 5 6

Vcc RI LD1 LD2 LD3 PD

Positive Supply Voltage Referency Oscillator Input

7 8 9 10

T/R F in P6 P5

Transmit=HIGH Receive=LOW VCO Frequency Input Programmable input 6 Programmable input 5

Phase Detector Output

11 12

P4 P3


13 14 15 26

P2 P1 P1 GND

Programmable input 2 Programmable input 1 Programmable input 0 Ground


Programming Chart for PLL03A (U.S. - AM) PLL08A (EEC - FM) RX Divided by

Channel 1 2 .. 22 .. 40

1206 1208 .... 1258 .... 1294

TX Divided by 1297 1299 .... 1349 .... 1385

NOTES: 1. Spesial divided by 2 circuit in TX mode change Referency Divider output to 2.5kHz steps. 2. 91-count upshifts on TX provides 455kHz offset for receiver IF mixing when VCO frequency is doubled. 3. Sinse chip cannot divide VCO directly, they are down-mixed with the 10.240MHz Referency Oscillator signal, produsing 6MHz outputs (RX Mode) and 3MHz outputs (TX Mode) into dividers. Standard 16MHz VCO is used. 4. PLL08A contains only the first 22 FCC channels for EEC use; otherwise both chip are identical. Example of VCO Determination, Channel 1: 1206 x 5kHz + 10.240MHz = 16.270MHz (RX-Mode) 1297 x 2.5kHz + 10.240MHz = 13.4825MHz (TX-Mode) (13.4825MHz x 2 = 26.965MHz)


PLL0305A Serial Input PLL Frequency Synthesizer

Pin

Name

1 2 3

RA 1 RA 2 øV

4 5 6 7 8 9 10 11

øR Vcc PD GND LD F in CLOCK DATA

12 13 14 15 16 17

ENABLE PD TEST REF out X out X in

Description

18

RA 0


PLL2002A Serial Input PLL Frequency Synthesizer The PLL2002A is a serial data programmable PLL Frequency Syntheseizer. Ratios of reference frequency divider and input frequency divider can be independently set. Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14

Name

Description Reference X-tal Oscillator Input Reference X-tal Oscillator Output No Connection Positive Supply Voltage - 5 Volt Phase Detector Output - VCO Voltage Out Ground Loop Detector - Loop Detected=HIGH - Not Detected=LOW VCO Frequency In Clock from CPU Data from CPU Enable from CPU Charge pump output for activ lowpass filter No Connection Connect to Vcc

15

RI RO NC Vcc PD GND LD Fin CL Data EN DOA NC Test OV

16

OR



Serial Data for PLL2002A

Serial data input timing

Divider data setting procedure

Input data must be MSB first. Final bit (17th bit) is assigned to the control bit. Data are written into shift register at the rising edge of the CLK signal. When LE is HIGH, data is transferred from the shift register to either the latch of reference divider or input divider. Thus data must be written on the shift register while LE is remaining L0W. While all bits of the N latch to are "0", the N counter will be disabled, DOA, DOP are floating, and the supply current will be decreased. While all bits of the R latch are "0", oscillator will be disabled. While all bits of R and N latches are "0" , supply current decreases to 10uA or less.


TK10483 Low Power Narrowband FM IF TK10483 is similar to RCL10483

The TK10483 is a low power narrow band FM detector integrated circuit for FM dual conversion of communication equipment. The TK10483 includes oscillator, limiting amplifier, AFC circuit, quadrature detect. Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

Name

Description Crystal oscillator (10.245MHz) Crystal oscillator (10.245MHz) RF / MF input (10.7MHz)

GND

Ground Output to IF Filter (455kHz)

Input from IF Filter (455kHz)

Vcc

Positive Supply Voltage Quadrature Coil Audio Output


REC86345 PLL Frequency Synthesizer





Pin 1 2 3

Name AFC Vcc F in

Description Automatic Frequency Control Positive Supply Voltage VCO Frequency Input

4 5 6

RI RO FS

Referency Oscillator Input Referency Oscillator Output LOW=10kHz - HIGH=5kHz

7 8 9 10 11

APC LD P7 P6 P5

Automatic Phace Control Loop Detect - Unlocked=LOW Locked=HIGH Programmable input 7 Programmable input 6 Programmable input 5

12 13 14 15 16 17 18

P4 P3 P2 P1 P1 GND FIL

Programmable input 4 Programmable input 3 Programmable input 2 Programmable input 1 Programmable input 0 Ground


TA7320P RL7320 Duble Balanced Modulator/Demodulator/Mixer

Pin 1 2 3 4 5

Name Vcc

GND

Description Positive Supply Voltage Input Output Ground

6 7 8 9

Input Input Output


SM5118 PLL Frequency Synthesizer

Overview This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 8 bit BCD binary programmable divide-by-N counter. Pin 1 2 3 4 5 6 7

Name Vcc F in RI RO 1/2R RB PD

Description Positive Supply Voltage VCO Frequency Input Referency Oscillator Input Referency Oscillator Output Reference OSC frequency divide by 2 output Reference Oscillator (Buffered) Phase Detector Output

8 9 10 11 12 13 14

LD NC P8 P7 P6 P5 P4

Loop Detect - Unlocked=LOW Locked=HIGH Not Connected Programmable input 8 Programmable input 7 Programmable input 6 Programmable input 5 Programmable input 4

15 16

P3 P2


17 18

P1 GND




SM5123A PLL Frequency Synthesizer

Pin 1 9 9 9 9 9 9 9 18 2 2 18 9

Name Vcc A B C D E F G GND RO RI GND F in

Description Positive Supply Voltage Display Segment A Display Segment B Display Segment C Display Segment D Display Segment E Display Segment F Display Segment G Ground Referency Oscillator Output Referency Oscillator Input Ground VCO Frequency Input

1 19 18 5 4

Vcc AO AI PD LD

Positive Supply Voltage Loop filter Amplifier Output Loop filter Amplifier Input Phase Detector Output Loop Detect - Unlocked=LOW Locked=HIGH

9 18 18 18 18 18

T/R CH19 CH19 DOWN UP GND

Transmit=LOW Receive=HIGH Channel 19 Channel 19 Channel DOWN Channel UP Ground



SM5124A PLL Synthesizer

Overview This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 8 bit ROM programmable divide-by-N counter. The ROM-table is programmed from factory to 40 channels. Pin Name Description 1 Q in Internal quartz crystal oscillator circuit input 2 3 4 5 6 7 8

Q out VDD LD DO AI AO T/R

Internal quartz crystal oscillator circuit output Power supply 5,7 to 6,3 Volt UNLOCKED signal output. Unlocked: Low, Locked: High Phase detector output. Charge pump circuit for active filter Amplifier input Amplifier output Transmit/receiving switch. Transmit: High, Receive: Low

9 10

F in P0

Programmable counter input Channel switching input

11 12 13 14 15

P1 P2 P3 P4 P5

Channel switching input Channel switching input Channel switching input Channel switching input Channel switching input

16 17 18

P6 P7 VSS

Channel switching input Channel switching input Ground



SM5152A Serial Programmable PLL Frequency Synthesizer

Pin

Name

Description

1

RIN

Referency Frequency Input

2

RO

Referency Frequency Output (Buffered)

3

VCC


4

PDO


5

Ground

6

GND fIN

7 8 9

E D CL

Enable Data Clock

Frequency Input


SM5158A Serial Input PLL Frequency Synthesizer

Pin 1 2 3

Name

Description

4 5 6 7 8 9 10 11 12 13 14 15 16



SO42P Duble Balanced Modulator Similar to TDA 6130-5

Pin 7 Input Pin 8 Input Pin 2 Output Pin 3 Output Pin 5 Bias Input Pin 11 Input Pin 13 Input Pin 10 Output Pin 12 Output Pin 1 GND Pin 4 GND Pin 6 GND Pin 9 GND Pin 14 GND


TA7200 / TA7204 / TM1153 Audio Power Amplifier

Pin 1 2 3 4 5 6 7 8 9 10

Name GND OP Vcc BP FB FB BP FB BP IP

Description Ground Output Positive Supply Voltage Bypass Feedback Feedback Bypass Feedback Input Bypass Input


TA7222 Audio Power Amplifier

5,8 Watt Audio Power Amplifier with Muting Control Pin 1 2 3 4 5 6 7 8 9 10

Name Vcc RR MC OP FB GA GND GND OP BS

Description Supply Voltage Ripple Reject Muting control AF Signal Input FB Filter Gain adjust Ground Ground AF Output BootStrap


TA7303P FM IF Amplifier and Discriminator

Pin 1 2 3 4 5 6 7 8 9

Name

GND

Vcc

Description IF Input NF S-Meter Muting Ground Discriminator Coil Discriminator Coil Audio Output Positive Supply Voltage


TA7368 Audio Power Amplifier

0,7 Watt Audio Power Amplifier with Pre-Amlifier Pin

Name

1 2 3 4 5 6

IP

7 8 9

OP

GND GND

Vcc

Description Input Ripple filter NF Phase Pre-amlifier Ground Power-amplifier Ground Output NC Positive supply voltage


TC5080P Programmable Divider

Pin

Name

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Description Prog. Input 1 Prog. Input 2 Prog. Input 3 Prog. Input 4 Prog. Input 5 Prog. Input 6 Prog. Input 7 Prog. Input 8

GND PD

Programmable Divider Output to PLL

Vcc

Frequency Input from VCO Positive Suppy Voltage

TC5080 / TC5081 - SSB Chassis


TC5081P PLL Phase-Locked-Loop

Description:

The TC5081P is an integrated circuit in a 9-Lead SIP type package consisting of a digital phase comparator and an amplifier. Three state outputs connected to low pass filter (using an internal amplifier) will produce DC voltage to control a VCO. Low state pulses appear on phase out as long as the loop is unlocked and thses can be utilized as lock indicator. Pin

Name

Description

1

AOUT

Amplifier Output

2

AIN

Amplifier Input

3 4


5

PD Phase Output VCC

6 7 8 9

NC S R GND

No Conection Reference Frequency Input VCO Frequency Input Ground

Suply Voltage 4,5-8 Volt

TC5080 / TC5081 - SSB Chassis


TC5082P Oscillator and Reference Divider

Pin 1 2 3 4 5 6 7 8 9

Name

Description Oscillator Frequency Output X-tal Oscillator X-tal Oscillator

Vcc Oscillator Frequency Output Divided by 1024 Oscillator Frequency Output Divided by 256 GND


TC9102 PLL Frequency Synthesizer





Pin 1 2 3

Name Vcc F in RI

Description Positive Supply Voltage VCO Frequency Input Referency Oscillator Input

4 5 6

1/2 R PD

Reference OSC frequency divide by 2 output Connect to GND Phase Detector Output

7 8 9 10 11

AI AO LD T/R P5

Amp. Input Amp. Output Loop Detect - Unlocked=LOW Locked=HIGH Transmit=HIGH Receive=LOW Programmable input 5

12 13 14 15 16 17 18

P4 P3 P2 P1 P1


GND

Ground



TC9103 PLL Frequency Synthesizer





Pin 1 2 3

Name Vcc RI RO

Positive Supply Voltage Referency Oscillator Input Referency Oscillator Output

4 5 6

1/2 R PD AI

Reference OSC frequency divide by 2 output Phase Detector Output Amp. Input

7 8 9 10 11

AO LD T/R P5 P4

Amp. Output Loop Detect - Unlocked=LOW Locked=HIGH Transmit=HIGH Receive=low Programmable input 5 Programmable input 4

12 13 14 15 16 17 18

P3 P2 P1 P1

Programmable input 3 Programmable input 2 Programmable input 1 Programmable input 0 Connect to GND VCO Frequency Input Ground

F in GND

Description



TC9106 Aand TC9119 PLL Frequency Synthesizer

Overview This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 8 bit ROM programmable divide-by-N counter. The ROM-table is programmed from factory to 40 channels. Pin 1 2 3 4 5 6 7

Name Vcc RI CL LD PD AI AO

8 9 10 11

T/R F in P0 P1

Description Positive Supply Voltage Referency Oscillator Input Loop Detect - Unlocked=LOW Locked=HIGH Phase Detector Output Amp. Input Amp. Output Transmit=HIGH Receive=LOW VCO Frequency Input Programmable input 0 Programmable input 1

12 13 14 15 16 17 18

P2 P3 P4 P5 P6 P7 GND

Programmable input 2 Programmable input 3 Programmable input 4 Programmable input 5 Programmable input 6 Programmable input 7 Ground



Channel 1 2 .. 22 .. 40

3254 3256 .... 3306 .... 3342

TX Divided by 3345 3347 .... 3397 .... 3433

NOTES: 1. 91-count upshift on TX provides 455kHz offset for receiver IF mixing. 2. Reference and Programmable Dividers use 5kHz steps. Example of VCO Determination, Channel 1: 3254 x 5kHz = 16.270MHz (RX-Mode) 3345 x 5kHz = 16.725MHz (TX-Mode)


Channel 1 2 ..

3381 3383 ....

TX Divided by 3472 3474 ....

40

3459

3550

NOTES: 1. Identical operation principal to TC9106. Only difference is the N-Codes themselves. 2. reference and Programmable Dividers use 5kHz step. 3. 91-count upshift on TX provides 455kHz offset for receiver IF Mixing. Example of VCO Determination, Channel 1: 3381 x 5kHz = 16.905MHz (RX-Mode) 3472 x 5kHz = 17.360MHz (TX-Mode) + 1.25kHz tuned offsets.


TC9122 Programmable Divider

Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14

Name Vcc Fin

Description Positive Supply Voltage Divider Input Programable Input Programable Input Programable Input Programable Input Programable Input Programable Input Programable Input Programable Input Programable Input Programable Input Programable Input Programable Input

15 16 17 18

Programable Input Programable Input Fout GND

Divider Output Ground


TDA1905 Audio Power Amplifier

5 Watt Audio Power Amplifier with Muting Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Name

Description

GND GND GND GND GND GND

Output Supply Voltage BootStrap Threshold Muting Inverting Input SVR Non Inverting Input Ground Ground Ground Ground Ground Ground

GND GND

Ground Ground

Vcc


TDA2003 Audio Power Amplifier

Pin 1 2 3 4 5

Name

GND Vcc

Description Input Feedback Ground Output Positive Power Supply


TK10487M FM IF-Amplifier and Discriminator High sensitivity FM IF system IC (for use in cordless phones, amateur radio, etc.) with signal meter output, up to 60MHz operation.

Pin

Name

1 2 3 4 5 6 7 8 9 10 11 12

Description Oscillator Oscillator Output to Filter Input from Filter

Vcc

Discriminator Coil Audio Output Positive Supply Voltage

13 14 15 16 17 18 19 20

GND

Ground RF Input


TK10930V Narrowband FM/AM IF Amplifire and Demodulator Narrow band FM/AM IF system lC (for use in amateur, air band, marine band receivers)up to 60MHz. Features AM/FM IF Amp. available : Independent operation. Wide operating voltage range : 2.5V 8.0V. Wide signal meter output. AGC amp. for AM IF available. Ceramic discriminator is available. AM ON/OFF Function

Pin

Name

1 2 3 4 5 6 7

Description Oscillator Oscillator Mixer Out

Vcc

Positive Power Supply AM IF Output Decoupling FM IF Output

8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24

GND

GND

Decoupling Decoupling Limiter Output Quad In FM Discriminator Output AM Detector Output AM Switch IF Ground RSSI Out AM Low Out AM AGC (AutomaticGainControl) Noise Amplifier Input Noise Amplifier Output CCMP In CCMP Out Mixer Ground RF/IF Input


uPC563 Audio Power Amplifier Similar to uPC1001 / uPC1024 / uPC1025 / uPC1156

4,8 Watt Audio Power Amplifier Pin 1 7 2 4 5 6 7 9 7 10

Name Vcc NC BS PC PC IP FB GND NC OP

Description Supply Voltage BootStrap Phase Compensation Phase Compensation Input Feedback Ground Output

uPC577H Balanced RF Amplifier

Pin

Name

Description

1 2

Decoupling Input

3 4 5 6 7

Input Ground Output Decoupling Positive Power Supply

GND

Vcc

uPC1037H Duble Balanced Mixer/Amlifire Pin 1 2 3 4 5 6 7 8

Name

Description

Vcc


GND

Output Ground Input Decoupling Input


uPC1182H 5 Watt Audio Power Amplifier

Pin

Name

Description

1 2 3 4 5 6 7


uPC1241H uPC1242H 5 Watt Audio Power Amplifier

Pin 1 2 3 4 5 6 7 8

Name

Description

µPD858C PLL Integrated Circuits

Overview This PLL-circuit use a 10 bit BCD programmable divide-by-N counter for 399 channels.




Pin Name 1 LD 2 PD out 3 AI

Decription Loop Detector output - HIGH=Unlocked LOW=Locked Phase Detector output Loop filter Amplifier Input

4 5 6

AO PDI RDO

Loop filter Amplifier Output Programable Divider Input Reference Divider Output

7 8 9 10 11

FS 1/2R RI RO FIN

Frequency Select input: HIGH= 10kHz - LOW=5kHz Referency frequency divided by 2 Referency oscillator Input (X-tal) Refeerency oscillator Output (X-tal) VCO Oscillator Input

12 13 14 15 16 17 18 19

VCC P0 P1 P2 P3 P4 P5 P6

Positive Power Supply (+5Volt) BCD programable input 0 BCD programable input 1 BCD programable input 2 BCD programable input 3 BCD programable input 4 BCD programable input 5 BCD programable input 6

20 21 22 23 24

P7 P8 P9 GND PO

BCD programable input 7 BCD programable input 8 BCD programable input 9 Ground Programable Divider Output


Modification methods BCD Programming of uPD858 Ch. No.

Divided by

P0

P1

P2

P3

P4

P5

P6

P7

P8

P9

1 2 3

91 92 93

1 0 1

0 1 1

0 0 0

0 0 0

1 1 1

0 0 0

0 0 0

1 1 1

0 0 0

0 0 0

4 .. 40

95 .. 135

1

0 .. 0

1 .. 1

0 .. 0

1 .. 1

0 .. 1

0 .. 0

1

0 .. 1

0 0 0

1

0

P0 to P3 is ONES P4 to P7 is TENS P8 to P9 is HUNDREDS Above each program pin number is now something called "BCD P0WERs" rather than the previous "P0WERS-0F-2". In this system the pins are assigned such that each successive group of pins has a significance 10 times greater than the preceeding group. Within each decimal group the weights still double in the usual binary progression, but here the highest possible number in a group can't exceed "9" or its decimal multiple such as "90", "900", etc. (Assuming there were that many IC pins.) Each decimal group can only have a maximum of 4 bits. In this IC there are only 10 rather than 12 program pins so the Hundreds Group can never be worth more than (1 + 2) x 100 or 300. Just figure the total binary value of each group in the usual way, multiply it by 1, 1O, or 100 as appropriate, then add all the groups together: 0nes Group + Tens Group + Hundreds Group, etc. Since each group has a value, the sum of the groups is the N-Code. For Ch.1, the group sum is 1 + (10 + 80) = 91. Try the math yourself for the other channels. Also notice that Pin 22 is permanently grounded (logic "0" ) since its BCD weight is "200", but we never need a code bigger than "135." (100 + 30 + 5.) By using all ten pins (pins 13-22) you see there's a potential frequency capacity of (9 + 90 + 300) = 399 channels if you could .program them all. This fact has been put to great use in modifications! 0nce again, the uPD858 chip had the excess capacity for possible use elsewhere.

µPD2810 PLL Integrated Circuits

Pin 1 2 3 4 5 6 7 8 9 10 11 12

Name P1 P2 P3 P4 P5 P6 P7 T Q IFS T/R VDD

Decription Binary programable input 1 Binary programable input 2 Binary programable input 3 Binary programable input 4 Binary programable input 5 Binary programable input 6 Binary programable input 7 Divided by 2 input Divided by 2 output IF Frequency Select Transmit=LOW Receive=HIGH Positive Power Supply (+5Volt)

13 14 15 16

RO RI RB 1/2R

Refeerency oscillator Output (X-tal) Referency oscillator Input (X-tal) Reference divider output (Buffered) Referency frequency divided by 2

17 18 19 20 21 22 23 24

LD VDD PD out AI AO FS GND FIN

Loop Detector - HIGH=Locked LOW=Unlocked Positive Power Supply (+5Volt) Phase Detector output Loop filter Amplifier Input Loop filter Amplifier Output Function Select - HIGH=10kHz step LOW=5kHz step Ground VCO Oscillator Input



Overview This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 8 bit BCD binary programmable divide-by-N counter or 6 bit ROM programmable divide-by-N counter. The ROM-table is programmed from factory to 40 channels. Pin 1 2 3 4 5

Name GND FIN MS PO DO

Decription Ground VCO Oscillator Input Mode Select - HIGH=40 Channels ROM - LOW=Binary input (N=3-255) Programable Divider Output Reference Divider Output

6 7 8 9

AO AI PD LD

Loop filter Amplifier Output Loop filter Amplifier Input Phase Detector output Loop Detector output - Locked=HIGH Unlocked=LOW

10 11 12 13 14 15 16 17 18 19 20 21

VDD I P1 P2 P3 P4 P5 P6 P7 P8 1/2R RI

Positive Power Supply (+5Volt) Inhibit Binary programable input 1 Binary programable input 2 Binary programable input 3 Binary programable input 4 Binary programable input 5 Binary programable input 6 Binary programable input 7 Binary programable input 8 Referency frequency divided by 2 Referency oscillator Input (X-tal)

22

RO

Refeerency oscillator Output (X-tal)



Overview This 27 MHz band, PLL frequency synthesizer LSI chip is designed specifically for CB transceivers. The integrated circuit`s incorporates PLL circuitry and a controller for CB applications on a single CMOS chip. This PLL-circuit use a 6 bit BCD binary programmable divide-by-N counter. N-codes from N=91 to N=135.




Pin 1 2 3 4 5 6

Name P1 P2 P3 P4 P5 P6

Decription Program input 1 Program input 2 Program input 3 Program input 4 Program input 5 Program input 6

7 8 9 10 11 12 13 14

T Q NC 1/2R VDD RI RO RB

Divided by 2 Input Divided by 2 Output Not Connected Referance Osc. Output Divided by 2 V+ (5 Volt) Referance Osc. Input Referance Osc. Output Referance Osc. Output +

15 16 17 18 19 20 21 22

LD TC PD AI AO NC VSS FIN

Loop Detect Output - HIGH=Locked LOW=Unlocked Loop Detect Output (Connected HIGH) Phase Comparator Output Amp. Input Amp. Output Not Connected GND HF Input


Variable capacitance diode

BB112 AM variable capacitance diode BB130 AM variable capacitance diode BB131 VHF variable capacitance diode BB132 VHF variable capacitance diode BB133 VHF variable capacitance diode BB134 Low-voltage variable capacitance diode BB147 VHF variable capacitance diode BB150 VHF variable capacitance diode BB152 VHF variable capacitance diode BB156 Low-voltage variable capacitance diode BB204 VHF variable capacitance diode BB215 UHF variable capacitance diode BB405 UHF variable capacitance diode BB809 VHF variable capacitance diode BB910 VHF variable capacitance diode KDV251 Variable capacitance diode SVC251 Variable capacitance diode


BB112 AM variable capacitance diode APPLICATIONS · Electronic tuning in VHF television tuners, band B up to 460 MHz. · VCO. Anode Katode


BB130 AM variable capacitance diode APPLICATIONS · Electronic tuning in AM radio applications · VCO Anode Katode


BB131 VHF variable capacitance diode APPLICATIONS · Electronic tuning in satellite tuners · Tunable coupling · VCO. Anode Katode


BB132 VHF variable capacitance diode APPLICATIONS · Electronic tuning in VHF television tuners, band A up to 160 MHz · VCO. Anode Katode


BB133 VHF variable capacitance diode APPLICATIONS · Electronic tuning in VHF television tuners, band B up to 460 MHz · VCO. Anode Katode


BB134 Low-voltage variable capacitance diode APPLICATIONS · VCO · UHF Tuning


BB147 VHF variable capacitance diode APPLICATIONS · Electronic tuning in television tuners with extended VHF range · Voltage controlled oscillators (VCO). Anode Katode


BB150 VHF variable capacitance diode APPLICATIONS · Electronic tuning in VHF television tuners, band B up to 460 MHz · VCO Anode Katode


BB152 VHF variable capacitance diode APPLICATIONS · Electronic tuning in VHF television tuners, band A up to 160 MHz · Voltage controlled oscillators (VCO) Anode Katode


BB156 Low-voltage variable capacitance diode APPLICATIONS · Voltage controlled oscillators (VCO)


BB204 VHF variable capacitance diode APPLICATIONS · Electronic tuning in FM radio applications · VCO Katode Anode Katode


BB215 UHF variable capacitance diode APPLICATIONS · Electronic tuning in UHF television tuners · VCO. Katode Anode


BB405 UHF variable capacitance diode APPLICATIONS · Electronic tuning in UHF television tuners · VCO. Katode Anode


BB809 VHF variable capacitance diode APPLICATIONS · Electronic tuning in VHF television tuners, band A up to 160 MHz. · VCO. Katode Anode


BB910 VHF variable capacitance diode APPLICATIONS · Electronic tuning in VHF television tuners, band B up to 460 MHz · VCO Katode Anode


KDV251 Variable capacitance diode Anode

APPLICATIONS · AFC · CB VCO Katode


SVC251SPA Variable capacitance diode APPLICATIONS · AFC · CB VCO Anode Katode


2SC380 Silicon NPN Transistor High frequency amplifier applications. The 2SC380 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is designed for use in AM converter, AM/FM IF amplifier and local oscillator in AM/FM tuner. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

35V 30V 4V 50mA 300mW +125°C -55° to +125°C

Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 12V, IC = 2mA

Min Typ Max Unit 40 - 240

Power Gain

PG

VCE = 6V, IC = 1mA, f = 10,7MHz 27

Gain-Bandwidth Product

fT

IC = 1mA, VCE = 10V


100

29

33

dB

400 MHz

2SC383 Silicon NPN Transistor High frequency amplifier applications. The 2SC383 is a silicon NPN planar epitaxial transistor in a TO-92 type package. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

50V 45V 4V 50mA 300mW +125°C -55° to +125°C

Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 12,5V, IC = 12,5mA


Power Gain

PG

VCE = 12,5V, IC = 12,5mA, f = 45MHz 29

-

36

dB


fT

IC = 12,5mA, VCE = 12,5V

-

-

MHz


300

2SC388 Silicon NPN Transistor High frequency amplifier applications. The 2SC388 is a silicon NPN planar epitaxial transistor in a TO-92 type package. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

30V 25V 4V 50mA 300mW +125°C -55° to +125°C

Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE = 12,5V, IC = 12,5mA


Power Gain

PG

VCE = 12,5V, IC = 12,5mA, f = 45MHz 28

-

36

dB


fT

IC = 12,5mA, VCE = 12,5V

-

-

MHz


300

2SC454 Silicon NPN Transistor High frequency applications. The 2SC454 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as High frequency amplifier and Mixer applications. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

30V 30V 5V 100mA 200mW +150°C -55° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Forward Current Transfer Ratio

Symbol Test Conditions hFE VCE = 12V, IC = 2mA



fT

VCE = 12V, IC = 2mA

-

230

-

MHz

Power Gain

PG

VCE = 12V, IC = 1mA, f = 455kHz

-

35

-

dB

Noise Figure

NF

VCB = 6V, IC = 0,1mA, f = 1kHz

-

-

25

dB


2SC460 Silicon NPN Transistor High frequency applications. The 2SC460 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as High frequency amplifier and Mixer applications. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

30V 30V 5V 100mA 200mW +150°C -55° to +150°C




fT

VCE = 12V, IC = 2mA

Power Gain

PG

Noise Figure

NF

Min Typ Max Unit 35 - 200 230

-

MHz

VCE = 6V, IC = 1mA, f = 10,7MHz 26

29

-

dB

VCB = 6V, IC = 2mA, f = 1MHz

5

-

dB


-

-

2SC535 Silicon NPN Transistor High frequency applications. The 2SC535 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is designed for use in VHF amplifier, mixer and local oscillator. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

30V 20V 4V 20mA 100mW +150°C -55° to +150°C




fT

VCE = 6V, IC = 5mA

450 940

Noise Figure

NF


Power Gain

PG

VCE = 6V, IC = 1mA, f = 100MHz 17

-

-

MHz

3,5

5,5

dB

20

-

dB

2SC829 Silicon NPN Transistor High frequency applications. The 2SC829 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as RF amplification, Oscillation, Mixing, and IF stage applications in FM/AM radios. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

30V 20V 5V 30mA 400mW +150°C -55° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Forward Current Transfer Ratio Current Gain-Bandwidth Product

Symbol Test Conditions Min Typ Max Unit hFE VCE = 10V, IC = 1mA 70 - 250 fT

VCE = 10V, IC = 1mA 150 230


-

MHz

2SC1009A Silicon NPN Transistor High frequency applications. The 2SC1009 is a silicon NPN planar epitaxial transistor in a SOT type package. This device is designed for use in AM converter, AM/FM IF amplifier and local oscillator in AM/FM tuner. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

50V 30V 5V 50mA 150mW +125°C -55° to +125°C


Min Typ Max Unit 60 100 180


fT

IC = 1mA, VCE = 6V, f = 100MHz 150 250

-

MHz

Noise Figure

NF

IC = 1mA, VCB = 6V, f = 1MHz

4

dB


-

2

2SC1047 Silicon NPN Transistor High frequency amplifier applications. The 2SC1047 is a silicon NPN planar epitaxial transistor in a TO-92 type package. - Optimum for RF amplification of FM/AM radios. - High transition frequency ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

30V 20V 3V 20mA 400mW +150°C -55° to +150°C



Power Gain

PG

VCE = 6V, IC = 1mA, f = 100MHz 20


fT

Noise Figure

NF

-

dB

IC = 1mA, VCE = 6V, f = 200MHz 450 650

-

MHz


-

dB

-

-

3,3


2SC1342 Silicon NPN Transistor High frequency applications. The 2SC1342 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as VHF amplifier, Oscillator and Mixer applications. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

30V 20V 4V 30mA 100mW +150°C -55° to +150°C





fT

VCE = 6V, IC = 1mA

Power Gain

PG

VCE = 6V, IC = 1mA, f = 100MHz 13

Noise Figure

NF



150 320

-

-

MHz

17

-

dB

5,5

8,5

dB

2SC1674 Silicon NPN Transistor High frequency applications. The 2SC1674 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as FM RF amplifier, Mixer and IF amlifier applications. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

30V 20V 4V 20mA 250mW +125°C -55° to +125°C





fT

IC = 5mA, VCE = 6V, IE

400 600

Power Gain

PG

VCE = 6V, IC = 1mA, f = 100MHz 18

Noise Figure

NF


-

-

MHz

22

-

dB

3

5

dB


2SC1906 Silicon NPN Transistor High frequency applications. The 2SC1906 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as VHF amplifier, Oscillator and Mixer applications. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

30V 19V 2V 50mA 300mW +150°C -55° to +150°C




fT


Power Gain

PG

VCE = 10V, IC = 5mA, f = 200MHz


Min Typ Max Unit 40 600 1000 -

18

-

MHz

-

dB

2SC1907 Silicon NPN Transistor High frequency applications. The 2SC1907 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as UHF Tuner and Oscillator applications. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

30V 19V 2V 50mA 300mW +150°C -55° to +150°C


Symbol Test Conditions Min Typ Max Unit hFE VCE = 10V, IC = 10mA 40 fT

VCE = 10V, IC = 10mA 900 1100


-

MHz

2SC1923 Silicon NPN Transistor High frequency applications. The 2SC1923 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is designed for use in FM high frequency amplifier, FM IF amplifier and local oscillator. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

40V 30V 4V 20mA 100mW +125°C -55° to +125°C




fT

IC = 1mA, VCE = 6V

-

550

-

MHz

Noise Figure

NF

VCE = 6V, IC = 1mA, f = 100MHz

-

2,5

4

dB

Power Gain

PG

VCE = 6V, IC = 1mA, f = 100MHz 15

18

-

dB


2SC2347 Silicon NPN Transistor High frequency applications. The 2SC2347 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is designed for use in UHF and VHF amplifier applications. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

30V 15V 3V 50mA 250mW +125°C -55° to +125°C

Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Forward Current Transfer Ratio hFE VCE = 3V, IC = 8mA 20 Gain-Bandwidth Product

fT

IC = 8mA, VCE = 10V 650

-


-

MHz

2SC2349 Silicon NPN Transistor High frequency applications. The 2SC2349 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is designed for use in VHF amplifier applications. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

30V 15V 3V 50mA 250mW +125°C -55° to +125°C

Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Forward Current Transfer Ratio hFE VCE = 3V, IC = 8mA 20 Gain-Bandwidth Product

fT

IC = 8mA, VCE = 10V 600

-


-

MHz

2SC2471 Silicon NPN Transistor High frequency applications. The 2SC2471 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as UHF Tuner and Oscillator applications. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

30V 30V 3V 50mA 310mW +150°C -55° to +150°C


Symbol Test Conditions Min Typ Max Unit hFE VCE = 10V, IC = 5mA 20 fT

VCE = 10V, IC = 5mA 1000 2000


-

MHz

2SC2498 Silicon NPN Transistor High frequency applications. The 2SC2498 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is designed for use in UHF and VHF amplifier applications. BEC Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

30V 20V 3V 50mA 300mW +125°C -55° to +125°C




fT


-

3,5

-

GHz

Noise Figure

NF

IC = 5mA, VCB = 10V, f = 500MHz

-

2,5

-

dB


2SC2512 Silicon NPN Transistor High frequency applications. The 2SC2512 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as VHF Tuner and Oscillator applications. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

30V 20V 3V 50mA 300mW +150°C -55° to +150°C



Min Typ Max Unit 30 -


fT


Power Gain

PG

VCE = 12V, IC = 2mA, f = 200MHz 16

Noise Figure

NF

VCB = 12V, IC = 2mA, f = 200MHz


600 900

-

-

MHz

20

-

dB

3,8

5,5

dB

2SC2644 Silicon NPN Transistor High frequency applications. The 2SC2644 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is designed for use in UHF and VHF amplifier applications. BEC Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

25V 12V 3V 120mA 500mW +125°C -55° to +125°C


Min Typ Max Unit 20 50 -


fT


-

4

-

GHz

Noise Figure

NF

IC = 10mA, VCB = 10V, f = 500MHz

-

2,3

-

dB


2SC2668 Silicon NPN Transistor High frequency amplifier applications. The 2SC2668 is a silicon NPN planar epitaxial transistor in a MINI (TO-92S) type package. This device is suitable for use as FM RF/IF amplifier applications. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

40V 30V 4V 20mA 100mW +125°C -55° to +125°C



Power Gain

PG


-

18

-

dB


fT

IC = 1mA, VCE = 6V

-

550

-

MHz

Noise Figure

NF


-

2,5

5

dB


2SC2669 Silicon NPN Transistor High frequency applications. The 2SC2669 is a silicon NPN planar epitaxial transistor in a TO-92S (MINI) type package. This device is designed for use in AM converter, AM/FM IF amplifier and local oscillator in AM/FM tuner. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

35V 30V 4V 50mA 200mW +125°C -55° to +125°C




fT

IC = 1mA, VCE = 10V

100

Power Gain

PG

VCE = 6V, IC = 1mA, f = 10,7MHz 27


-

-

MHz

30

33

dB

2SC2753 Silicon NPN Transistor High frequency amplifier applications. The 2SC2753 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use in UHF and VHF amplifier applications. BEC Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

17V 12V 3V 70mA 300mW +125°C -40° to +125°C



Power Gain

PG


28

-

dB


fT

IC = 5mA, VCE = 10V, f = 100MHz 450 750

-

MHz

Noise Figure

NF


-

dB


-

-

2,2

2SC2786 Silicon NPN Transistor High frequency applications. The 2SC2786 is a silicon NPN planar epitaxial transistor in a MINI (TO-92S) type package. This device is designed for use in FM RF amplifier and local oscillator of FM tuner. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

30V 20V 4V 20mA 150mW +150°C -55° to +125°C





fT


400 600

Power Gain

PG

VCE = 6V, IC = 1mA, f = 100MHz 18

Noise Figure

NF


-

-

MHz

22

-

dB

3

5

dB


2SC2787 Silicon NPN Transistor High frequency applications. The 2SC2787 is a silicon NPN planar epitaxial transistor in a TO-92S (MINI) type package. This device is designed for use in AM converter, AM/FM IF amplifier and local oscillator in AM/FM tuner. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

50V 30V 5V 30mA 250mW +150°C -55° to +125°C




fT


Noise Figure

NF



Min Typ Max Unit 40 90 180 150 250 -

2

-

MHz

4

dB

2SC2814 Silicon NPN Transistor High frequency applications. The 2SC2814 is a silicon NPN planar epitaxial transistor in a SOT type package. This device is designed for general purpose amplifier applications. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

30V 20V 5V 30mA 150mW +125°C -55° to +125°C




fT

IC = 1mA, VCE = 6V,

200 230

Power Gain

PG


-

Noise Figure

NF


-

-

MHz

25

-

dB

3

-

dB


2SC2839 Silicon NPN Transistor High frequency applications. The 2SC2839 is a silicon NPN planar epitaxial transistor in a TO-92S (MINI) type package. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

30V 20V 5V 30mA 150mW +125°C -55° to +125°C




fT

IC = 1mA, VCE = 6V

200 320

Power Gain

PG


-

Noise Figure

NF


-

-

MHz

25

-

dB

3

-

dB


2SC2996 Silicon NPN Transistor High frequency applications. The 2SC2996 is a silicon NPN planar epitaxial transistor in a SOT type package. This device is designed for use in AM converter, AM/FM IF amplifier and local oscillator in AM/FM tuner. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

40V 30V 4V 50mA 150mW +125°C -55° to +125°C




fT

IC = 1mA, VCE = 6V

150 350

Noise Figure

NF


Power Gain PG VCE = 6V, IC = 1mA, f = 100MHz - 15 - dB

-

4

-

MHz

-

dB

2SC2999 Silicon NPN Transistor High frequency amplifier applications. The 2SC2999 is a silicon NPN planar epitaxial transistor in a MINI (TO-92S) type package. This device is suitable for use as Low Noise RF amplifier applications. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

25V 20V 3V 30mA 150mW +125°C -40° to +125°C



Power Gain

PG


-

28

-

dB


fT

IC = 5mA, VCE = 10V, f = 100MHz 450 750

-

MHz

Noise Figure

NF


-

dB

-

2,2


2SC3000 Silicon NPN Transistor High frequency applications. The 2SC3000 is a silicon NPN planar epitaxial transistor in a TO-92 type package. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

30V 20V 5V 30mA 250mW +125°C -55° to +125°C




fT

IC = 1mA, VCE = 6V

200 320

Power Gain

PG


-

Noise Figure

NF


-

-

MHz

25

-

dB

3

-

dB


2SC3127 Silicon NPN Transistor High frequency applications. The 2SC3127 is a silicon NPN planar epitaxial transistor in a SOT-23 type package. This device is designed for use in VHF and UHF wide band amplifier. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

20V 12V 3V 50mA 150mW +150°C -55° to +150°C




fT

VCE = 5V, IC = 20mA

3,5 4,5

Noise Figure

NF


-

Power Gain

PG

VCE = 5V, IC = 20mA, f = 900MHz

-


-

GHz

2,2

-

dB

10,5

-

dB

2SC3128 Silicon NPN Transistor High frequency applications. The 2SC3128 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is designed for use in VHF and UHF wide band amplifier. BEC Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

20V 12V 3V 50mA 350mW +150°C -55° to +150°C




fT

VCE = 5V, IC = 20mA

3,5 4,5

Noise Figure

NF


-

Power Gain

PG

VCE = 5V, IC = 20mA, f = 900MHz

-


-

GHz

2,2

-

dB

10,5

-

dB

2SC3142 Silicon NPN Transistor High frequency amplifier applications. The 2SC3142 is a silicon NPN planar epitaxial transistor in a SOT type package. This device is suitable for use as Low Noise RF amplifier applications Description: . Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

25V 20V 3V 30mA 150mW/FONT> +125°C -40° to +125°C

Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter

Symbol

Test Conditions

Forward Current Transfer Ratio

hFE

VCE = 10V, IC = 8mA

Power Gain

PG


Gain-Bandwidth Product Noise Figure

Min Typ Max Unit 40

-

180

-

28

-

dB

fT

IC = 5mA, VCE = 10V, f = 100MHz 450 750

-

MHz

NF


-

dB

-

2,2


2SC3355 Silicon NPN Transistor High frequency applications. The 2SC3355 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for low noise amplifier at VHF and UHF band. BEC Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

20V 15V 3V 100mA 600mW +150°C -65° to +150°C




fT

VCE = 6V, IC = 20mA,

Power Gain

PG

VCE = 10V, IC = 20mA, f = 1GHz

Noise Figure

NF

VCB = 10V, IC = 7mA, f = 1GHz


Min Typ Max Unit 50 120 300 -

-

6,5

-

GHz

11

-

dB

1,1

-

dB

2SC3356 NPN SILICON EPITAXIAL TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. FEATURES • Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

20V 12V 3V 100mA 200mW +150°C -65° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Forward Current Transfer Ratio hFE VCE =10V, IC = 20mA



fT

IC = 20mA, VCE = 10V,

-

7

-

GHz

Noise Figure

NF

IC = 7mA, VCB = 10V, f = 1GHz

-

1,1

2

dB



20V 12V 3V 50mA 600mW +150°C -55° to +150°C




fT

VCE = 5V, IC = 20mA

3,5 4,5

Noise Figure

NF


-

Power Gain

PG

VCE = 5V, IC = 20mA, f = 900MHz

-


-

GHz

2,2

-

dB

10,5

-

dB


15V 11V 2V 50mA 600mW +150°C -55° to +150°C




fT

VCE = 5V, IC = 20mA

-

6

-

GHz

Noise Figure

NF


-

1,6

-

dB

Power Gain

PG

VCE = 5V, IC = 20mA, f = 900MHz

-

10,5

-

dB


2SC3582 Silicon NPN Transistor High frequency applications. The 2SC3582 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for low noise amplifier at VHF and UHF band. BEC Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

20V 10V 1,5V 65mA 600mW +150°C -65° to +150°C





fT

VCE = 8V, IC = 20mA,

-

8

-

GHz

Power Gain Noise Figure

PG NF

f = 1GHz VCB = 8V, IC = 7mA, f = 1GHz

-

12 1,2

2,5

dB dB


2SC3605 Silicon NPN Transistor High frequency amplifier applications. The 2SC3605 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use in UHF and VHF amplifier applications. BEC Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

20V 12V 3V 80mA 600mW +150°C -40° to +150°C




fT


5

6,5

-

GHz

Noise Figure

NF

IC = 5mA, VCB = 10V, f = 1GHz

-

1,1

-

dB


2SC4308 Silicon NPN Transistor High frequency applications. The 2SC4308 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is designed for use in VHF wide band amplifier. BEC Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

30V 20V 3V 300mA 600mW +150°C -55° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Forward Current Transfer Ratio hFE VCE = 5V, IC = 50mA 50 - 200 Gain-Bandwidth Product

fT

VCE = 5V, IC = 50mA 1,5 2,5


-

GHz

2SC4433 Silicon NPN Transistor High frequency applications. The 2SC4433 is a silicon NPN planar epitaxial transistor in a TO-92S (MINI) type package. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

40V 18V 3V 50mA 300mW +150°C -55° to +150°C




fT

IC = 5mA, VCE = 10V

-

750

-

MHz

Power Gain

PG

VCE = 10V, IC = 10mA, f = 100MHz

-

26

-

dB


KTC3194 Silicon NPN Transistor High frequency amplifier applications. The KTC3194 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as Low Noise RF amplifier applications. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

40V 30V 4V 20mA 625mW +150°C -50° to +150°C



Power Gain

PG

VCE = 6V, IC = 1mA, f = 100MHz 15

18

-

dB


fT

IC = 1mA, VCE = 6V, f = 100MHz

-

550

-

MHz

Noise Figure

NF


-

2,5

5

dB


KTC3195 Silicon NPN Transistor High frequency low noise amplifier applications. The KTC3195 is a silicon NPN planar epitaxial transistor in a MINI (TO-92S) type package. This device is suitable for use as RF VHF Band amplifier applications. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Derate above +25°C Operating Junction Temperature, TJ Storage Temperature Range, Tstg

40V 30V 4V 20mA 400mW 2.67mW/°C +150°C -55° to +150°C



Power Gain

PG


-

18

-

dB


fT

IC = 1mA, VCE = 6V, f = 100MHz

-

550

-

MHz

Noise Figure

NF


-

2,5

5

dB


KTC3880 Silicon NPN Transistor High frequency amplifier applications. The KTC3880 is a silicon NPN planar epitaxial transistor in a SOT type package. This device is suitable for use as RF amplifier applications. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Derate above +25°C Operating Junction Temperature, TJ Storage Temperature Range, Tstg

40V 30V 4V 20mA 150mW 2.67mW/°C +150°C -55° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Static Characteristics Forward Current Transfer Ratio hFE VCE = 10V, IC = 8mA

Min Typ Max Unit 40

-

200

Power Gain

PG


15

18

-

dB

Dynamic Characteristics Gain-Bandwidth Product

fT

IC = 5mA, VCE = 10V, f = 100MHz

-

550

-

MHz

Noise Figure

NF


-

2,5

5

dB




Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

20V 30V 3V 0,3A 0,9W +150°C -55° to +150°C


Symbol Test Conditions V(BR)CBO IC = 100uA, IE = 0


Min Typ Max Unit 30 V 20

-

-

V


ICBO

VCB = 25V IE = 0

-

-

1

µA


IEBO

VEB = 3V, IC = 0

-

-

10

µA


hFE

VCE = 5V, IC = 50mA, Note 1 50

-

200


fT

VCC = 5V, IC = 50mA

1,5 2,5

-

GHz


2SC461 Silicon NPN Transistor High frequency applications. The 2SC460 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as VHF amplifier and Mixer applications. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg

30V 30V 5V 100mA 200mW +150°C -55° to +150°C





fT

VCE = 12V, IC = 2mA

Power Gain

PG

VCE = 6V, IC = 1mA, f = 100MHz 13

Noise Figure

NF



-

-

230

-

MHz

17

-

dB

-

-

dB

2SC1675 Silicon NPN Transistor High frequency applications. The 2SC1674 is a silicon NPN planar epitaxial transistor in a TO-92 type package. This device is suitable for use as AM converter, AM/FM IF amplifier and local oscillator of AM/FM tuner. ECB Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Collector Current, IC Total Device Dissipation (TA = +25°C), PD Storage Temperature Range, Tstg

50V 30V 4V 30mA 250mW -55° to +150°C




fT


Noise Figure

NF



Min Typ Max Unit 40 - 180 150

-

-

MHz

-

-

4

dB

CB-Radio Component Database

CB-Radio Component Database

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