Diffuse phase transition and electrical properties of
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Diffuse phase transition and electrical properties of
Diffuse phase transition and electrical properties of lead-free piezoelectric (LixNa1-x)NbO3 (0.04≤x≤0.20) ceramics near morphotropic phase boundary S. Mitra, A. R. Kulkarni, and Om Prakash Citation: J. Appl. Phys. 114, 064106 (2013); doi: 10.1063/1.4817815 View online: http://dx.doi.org/10.1063/1.4817815 View Table of Contents: http://jap.aip.org/resource/1/JAPIAU/v114/i6 Published by the AIP Publishing LLC.
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JOURNAL OF APPLIED PHYSICS 114, 064106 (2013)
Diffuse phase transition and electrical properties of lead-free piezoelectric (LixNa1-x)NbO3 (0.04 £ x £ 0.20) ceramics near morphotropic phase boundary S. Mitra, A. R. Kulkarni, and Om Prakash Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay, Mumbai 400076, India
(Received 21 May 2013; accepted 24 July 2013; published online 9 August 2013) Temperature-dependent dielectric permittivity of lead-free (LixNa1-x)NbO3 for nominal x ¼ 0.04–0.20, prepared by solid state reaction followed by sintering, was studied to resolve often debated issue pertaining to exactness of morphotropic phase boundary (MPB) location besides structural aspects and phase stability in the system near MPB. Interestingly, a diffuse phase transition has been observed in the dielectric permittivity peak arising from the disorder induced in A-site and structural frustration in the perovskite cell due to Li substitution. A partial phase diagram has been proposed based on temperature-dependent dielectric permittivity studies. The room temperature piezoelectric and ferroelectric properties were investigated and the ceramics with x ¼ 0.12 showed relatively good electrical properties (d33 ¼ 28 pC/N, kp ¼ 13.8%, Qm ¼ 440, Pr ¼ 12.5 lC/cm2, Ec ¼ 43.2 kV/cm, and Tm ¼ 340 C). These parameter values make this material suitable for piezoelectric resonator and filter applications. Moreover, a high dielectric permittivity (e0 r ¼ 2703) with broad diffuse peak near transition temperature, and low dielectric loss (
