Atomic Layer Deposition Applications 7 - ECS Transactions - The ...

Atomic Layer Deposition Applications 7 Editors: J. W. Elam

S. De Gendt

Argonne National Laboratory Argonne, Illinois, USA

imec Leuven, Belgium

A. Londergan

S. F. Bent

Qualcomm MEMS Technologies San Jose, California, USA

Stanford University Stanford, California, USA

O. van der Straten

A. Delabie

IBM Research Albany, New York, USA

imec Leuven, Belgium

F. Roozeboom Eindhoven University of Technology and TNO Eindhoven, Netherlands

Sponsoring Divisions: Dielectric Science & Technology Electronics and Photonics

Published by

TM

The Electrochemical Society 65 South Main Street, Building D Pennington, NJ 08534-2839, USA tel 609 737 1902 fax 609 737 2743 www.electrochem.org

Vol. 41, No. 2

Copyright 2011 by The Electrochemical Society. All rights reserved. This book has been registered with Copyright Clearance Center. For further information, please contact the Copyright Clearance Center, Salem, Massachusetts. Published by: The Electrochemical Society 65 South Main Street Pennington, New Jersey 08534-2839, USA Telephone 609.737.1902 Fax 609.737.2743 e-mail: [email protected] Web: www.electrochem.org ISSN 1938-6737 (online) ISSN 1938-5862 (print) ISSN 2151-2051 (cd-rom) ISBN 978-1-56677-902-9 (Hardcover) ISBN 978-1-60768-256-1 (PDF) Printed in the United States of America.

PREFACE The seventh symposium on Atomic Layer Deposition Applications was held October 10 through 12, 2011 in Boston, Massachusetts, as part of the 220th Meeting of the Electrochemical Society. The focus of this symposium is the continuously expanding realm of Atomic Layer Deposition (ALD) applications. ALD allows the precise deposition of ultrathin, highly conformal coatings over complex, 3D topographies with controlled composition and properties. In its 7th successful year, this symposium has become a forum for sharing cutting edge research in the various technologies where ALD is currently used. Emerging and non-mainstream ALD applications are also of special interest. This issue of the ECS Transactions contains 36 peer reviewed papers presented at the symposium. The papers are organized into Chapters generally following the order and structure of the symposium sessions. Featured ALD topics include ALD for photovoltaics, ALD for batteries and fuel cells, dielectrics for stateof-the-art transistors and capacitors, and the ALD of metals and metal nitrides. A number of papers report on advances in ALD precursor and equipment development, and in particular the continued progress in high throughput ALD equipment. We wish to thank the invited speakers for their outstanding contributions: Ivo Raaijmakers, ASM International, Soo-Hyun Kim, Yeungnam University, Johan Swerts, IMEC, Kornelius Nielsch, University of Hamburg, Fritz Prinz, Stanford University, Titta Aaltonen, University of Oslo, Jane Chang, University of California, Simon Elliott, Tyndall National Institute, Christian Wenger, IHP, Jacques Kools, Encapsulix SAS, Thomas Proslier, Argonne National Laboratory, Byunghoon Yoon, University of Colorado, Gijs Dingemans, Technische Universiteit Eindhoven, Nicolas Tetreault, Ecole Polytechnique Federale de Lausanne The financial support of the symposium sponsors is gratefully acknowledged: Air Liquide, Applied Materials, Cambridge NanoTech, Gelest and Tokyo Electron.

Jeffrey W. Elam Fred Roozeboom Annelies Delabie Oscar van der Straten Stacey F. Bent Stefan De Gendt Ana Londergan

iii

ECS Transactions, Volume 41, Issue 2 Atomic Layer Deposition Applications 7

Table of Contents Preface

iii

Chapter 1 Microelectronics (Invited) Current and Future Applications of ALD in Micro-Electronics I. J. Raaijmakers

3

(Invited) Low Temperature Atomic Layer Deposition of Ru Thin Films with Enhanced Nucleation Using Various Ru(0) Metallorganic Precursors and Molecular O2 S. Kim

19

ALD Barrier Deposition on Porous Low-k Dielectric Materials for Interconnects S. Van Elshocht, A. Delabie, S. Dewilde, J. Meersschaut, J. Swerts, H. Tielens, P. Verdonck, T. Witters, and E. Vancoille

25

Copper-ALD Seed Layer as an Enabler for Device Scaling J. Mao, E. Eisenbraun, V. Omarjee, A. Korolev, and C. Dussarrat

33

(Invited) Plasma Enhanced Atomic Layer Deposited Ruthenium for MIMCAP Applications J. Swerts, M. Salimullah, M. Popovici, M. Kim, M. Pawlak, A. Delabie, M. Schaekers, K. Tomida, B. Kaczer, K. Opsomer, C. Vrancken, I. Debusschere, L. Altimime, J. Kittl, and S. Van Elshocht

41

(Invited) ALD and AVD Grown Perovskite-type Dielectrics for Metal-Insulator-Metal Applications C. Wenger, M. Lukosius, T. Blomberg, A. Abrutis, P. Baumann, and G. Ruhl

53

Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Study by Spectroscopic Ellipsometry V. Longo, N. Leick, F. Roozeboom, and W. Kessels

63

Low Equivalent Oxide Thickness TiO2 Based Capacitors for DRAM Application K. Fröhlich, B. Hudec, K. Hušeková, J. Aarik, A. Tarre, A. Kasikov, R. Rammula, and A. Vincze

73



v

Optimizing ALD HfO2 for Advanced Gate Stacks with Interspersed UV and Thermal Treatments- DADA and MDMA Variations, Combinations, and Optimization R. D. Clark, S. Consiglio, G. Nakamura, Y. Trickett, and G. J. Leusink

79

Structural Characteristics of Electrically Scaled ALD HfO2 from Cyclical Deposition and Annealing Scheme S. Consiglio, R. D. Clark, E. Bersch, J. LaRose, I. Wells, K. Tapily, G. J. Leusink, and A. Diebold

89

Chapter 2 Nanotechnology (Invited) Tailor-Made, Magnetic Nanotubes by Template-Directed Atomic Layer Deposition R. Zierold and K. Nielsch

111

ALD Applied to Conformal Coating of Nanoporous -Alumina: Spinel Formation and Luminescence Induced by Europium Doping E. Rauwel, O. Nilsen, A. Galeckas, J. Walmsley, E. Rytter, and H. Fjellvåg

123

Metalcone and Metalcone/Metal Oxide Alloys Grown Using Atomic and Molecular Layer Deposition B. Lee, V. Anderson, and S. George

131

Nanocomposites of ALD Hafnia Nanotubes Surface Functionalized with Gold Nanoparticles T. Abdel-Fattah, D. Gu, and H. Baumgart

139

Chapter 3 Reaction Mechanisms and Modeling Indium Oxide ALD Using Cyclopentadienyl Indium and Mixtures of H2O and O2 J. W. Elam, J. A. Libera, and J. N. Hryn

147

In Situ Gas-Phase Diagnostics for Titanium Nitride Atomic Layer Deposition J. E. Maslar, W. Kimes, and B. Sperling

157

Diffusion-Reaction Model of ALD in Nanostructured Substrates: Analytic Approximations to Dose Times as a Function of the Surface Reaction Probability A. Yanguas-Gil and J. W. Elam

169

(Invited) Reaction Mechanisms in ALD of Ternary Oxides S. D. Elliott and O. Nilsen

175



vi

Chapter 4 Equipment and Precursors Picosun SUNALE ALD Systems for High Quality Nanocoatings - Bridging the Gap between R&D and Industrial Production M. Toivola, T. Lehto, W. Li, T. Pilvi, and P. J. Soininen

187

(Invited) High Throughput Atomic Layer Deposition for Encapsulation of Large Area Electronics J. Kools

195

ALD for a Sustainable Future - Paving the Way to a Cleaner World from Sub-Nanometer Level M. Toivola and T. Pilvi

203

Development of Novel Silicon Precursors for Low-Temperature CVD/ALD Processes K. Iwanaga, K. Tada, H. Chiba, T. Yamamoto, A. Maniwa, T. Yotsuya, and N. Oshima

211

Atomic Layer Deposition of AlN with Tris(Dimethylamido)Aluminum and NH3 G. Liu, E. Deguns, L. Lecordier, G. Sundaram, and J. Becker

219

Chapter 5 Emerging Applications Deposition and Characterization of Atomic Layer Deposited ZnS Thin Films on p-type GaSb(100) Using Diethylzinc Precursor and Hydrogen Sulfide R. Xu, J. Huang, S. Ghosh, and C. Takoudis

229

(Invited) Atomic Layer Deposition of Superconductors T. Proslier, J. Klug, N. C. Becker, J. W. Elam, and M. Pellin

237

Study of Atomic Layer Deposition of ZnO on a Polar Oxide Substrate by In Situ Quartz Crystal Microbalance K. Pradhan and P. F. Lyman

247

Atomic Layer Deposition of Antimony Telluride Thin Films Using (Me3Si)2Te with SbCl3 as Precursors D. Gu, D. Nminibapiel, H. Baumgart, H. Robinson, and V. Kochergin

255

Enabling High Performance Instruments for Astronomy and Space Exploration with ALD F. Greer, M. Hoenk, B. Jacquot, T. Jones, M. Dickie, S. Monacos, S. Nikzad, E. Hamden, D. Schmonivich, P. Day, and H. Leduc

263



vii

Chapter 6 Photovoltaics, Batteries, and Fuel Cells (Invited) Molecular Layer Deposition of Flexible, Transparent and Conductive Hybrid Organic-Inorganic Thin Films B. Yoon, B. Lee, and S. George

271

Novel Hybrid Organic/Inorganic Photovoltaic Device Configuration Utilizing ALD Technology and Template Based Nanoelectrode Arrays D. Gu, H. Baumgart, and G. Namkoong

279

Atomic Layer Deposited Oxides for Passivation of Silicon Photoelectrodes for Solar Photoelectrochemical Cells B. Kalanyan and G. Parsons

285

(Invited) Aluminum Oxide and Other ALD Materials for Si Surface Passivation G. Dingemans and W. Kessels

293

(Invited) Atomic Layer Deposition for Novel Dye-Sensitized Solar Cells N. Tétreault, L. Heiniger, M. Stefik, P. L. Labouchère, E. Arsenault, N. K. Nazeeruddin, G. A. Ozin, and M. Grätzel

303

(Invited) Atomic Layer Deposited Yttria Stabilized Zirconia Barrier Layer for Proton Conducting Oxide J. Park, S. Kang, T. M. Gür, and F. Prinz

315

Remote Plasma Atomic Layer Deposition of Thin Films of Electrochemically Active LiCoO2 M. E. Donders, H. C. Knoops, W. Kessels, and P. H. Notten

321

(Invited) ALD of Thin Films for Lithium-Ion Batteries T. Aaltonen, V. Miikkulainen, K. Gandrud, A. Pettersen, O. Nilsen, and H. Fjellvåg

331

Author Index

341



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