Dynamic Characterization Platform. Toolkit for characterizing the switching behavior of Littelfuse SiC MOSFETs and diode
Making SiC Mainstream
Promoting SiC by Providing Application Level Support
Dynamic Characterization Platform
Toolkit for characterizing the switching behavior of Littelfuse SiC MOSFETs and diodes SiC high voltage MOSFETs and diodes are wide-bandgap devices that enable low conduction and low switching losses. However, maximizing their performance requires more than just plugging them into your application. In order to appreciate the full extent of performance benefits SiC offers, one should observe the device switching characteristics on a per-cycle basis. To do this properly requires: • A characterization board designed for SiC devices with minimal parasitic inductances • Precise measurement of voltage and current waveforms • Careful and optimized gate drive design and layout to minimize noise coupling
