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Influence of Annealing Temperature on Surface Morphological and Electrical Properties of Aluminum Thin Film on Glass Substrate by Vacuum Thermal Evaporator
This content has been downloaded from IOPscience. Please scroll down to see the full text. 2017 IOP Conf. Ser.: Mater. Sci. Eng. 226 012180 (http://iopscience.iop.org/1757-899X/226/1/012180) View the table of contents for this issue, or go to the journal homepage for more Download details: IP Address: 185.143.231.219 This content was downloaded on 14/08/2017 at 13:35 Please note that terms and conditions apply.
International Research and Innovation Summit (IRIS2017) IOP Publishing IOP Conf. Series: Materials Science and Engineering 226 (2017) 012180 doi:10.1088/1757-899X/226/1/012180 1234567890
Influence of Annealing Temperature on Surface Morphological and Electrical Properties of Aluminum Thin Film on Glass Substrate by Vacuum Thermal Evaporator K.M. Wibowo1, M.Z. Sahdan1, M.T. Asmah1, H. Saim1, F. Adriyanto2, Suyitno3, and S. Hadi3 1
Microelectronics and Nanotechnology Shamsuddin Research Center (MiNT-SRC), Universiti Tun Hussein Onn Malaysia, 86400 Batu Pahat, Johor, Malaysia 2 Department of Electrical Engineering, 3Department of Mechanical Engineering, Sebelas Maret University, Jl. Ir. Sutami No. 36A Kentingan, 57126 Surakarta, Indonesia Corresponding author:
[email protected] Abstract. This paper explains the effects of the annealing temperature on structural and electrical properties of Aluminum (Al) thin films. Al thin films were deposited on glass substrate by thermal vacuum evaporator. The films were then annealed at 100o, 200o, 300o, 400o, and 500oC for 1 hour. The surface morphology of Al films after annealing were characterized using atomic force microscope (AFM) and field emission scanning electron microscope (FESEM). The electrical properties were characterized using four point probe. From the results of this experiment, the roughness of Al films gradually decrease from 8.5 nm (before annealing) to 7.7 nm and the grain size gradually increase from 127 nm to 145 nm, when the temperature of annealing increased. The resistivity of the films was also decreased from 2.32 x10-5 ohm.cm to 1.9 x10-5 ohm.cm when the samples were annealed from 100o to
