Towards cost-effective and low defectivity DSA flows for line/space ... BCP anneal duration: most critical process step from a cost perspective .... Takehito Seo.
DSA - Abenteuerliste. Die Archomagus-Kampagne (Teil 1) . ... Abenteuer
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Feb 23, 2011 - subtraction angiography series for image .... We propose a novel DSA image summation algorithm which is based on a classification method to ...
fonologico, ortografico e lessicale), Vol. ... visuomotoria), Erickson Editore. ... M.
Pratelli, Disgrafia e recupero delle difficoltà grafo-motorie, Erickson Editore.
SELECT HV ETCH is a superior 35% high viscosity phosphoric etch available ...
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1 mar 2012 ... Blason, Borean, Bravar, Zoia “Il corsivo dalla A alla Z. La pratica”,. Erickson. .
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The organization is a partner of the Committee on Publication Ethics ... Keywords Niche marketing, Segmentation, Marketing strategy, Market segmentation. Paper type .... editorials, brief practitioner/consultant notes and book reviews. In order to ..
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net seeded area of 84 tractors and followed by 76 tractors for Punjab against all India average ... AICRP on Farm Implements and Machinery,. Central Institute of ...
bio-PET. This development was made possible by numerous inno- vations in the fields of .... are functional packagings that reduce food spoilage, light- ...... Klein-Marcuschamer D, Oleskowicz-Popiel P, Simmons BA, Blanch HW (2010).
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Sep 22, 2016 - Post-Litho. Post-trim. Post-strip. Post-BCP coat/anneal. 3X multiplication. Motivation. ⢠To improve etch selectivity. ⢠To improve line roughness.
Missing:
A6-1-3
PATTERN TRANSFER CHALLENGES OF THE SEQUENTIAL INFILTRATION SYNTHESIS (SIS) OF DIRECTED SELFASSEMBLY (DSA) FOR LINE/SPACE APPLICATIONS BT CHAN / A. SINGH / V. LUONG / D. PARNELL / R. GRONHEID / JF DE MARNEFFE / D. PIUMI 22/09/2016
LINE (CHEMO-EPITAXY DSA)
LiNe = Chemo-epitaxy Directed Self-Assembly with x-PS pinning guide. BCP = PS-b-PMMA [poly(styrene-block-methyl methacrylate)]
Post-Litho.
Post-trim
ERPS < ERPMMA
LiNe flow
3X multiplication
Post-strip
x-PS guide pin
Motivation • To improve etch selectivity • To improve line roughness
Post-BCP coat/anneal
BCP L0 = 28nm BT Chan et al. [MNE 2014] 2
BT. Chan / Sept. 2016
CONFIDENTIAL
SIS (SEQUENTIAL INFILTRATION SYNTHESIS)
We introduced the S.I.S process to infiltrate the AlOx into the PMMA domain. Thus, the etch selectivity increased. At the same time, we inverse the patterning.
Demonstrated AlOx lines transfer to Si3N4, but the AlOx lines toppling during the subsequent silicon substrate etch
Observed 3-AlOx lines grouping lead to pitch-walking issue especially after Si3N4 etch PS removal
SiN etch
Si3N4 etch Pitchwalking Si etch
Si etch AlOx lines toppling AlOx strip (wet)
BT Chan et al. [DSA Symposium 2015]
4
BT. Chan / Sept. 2016
CONFIDENTIAL
1ST
Pitch-walking • BCP film thickness; • PS etch times
STEP: PS REMOVAL
We introduced Ar/O2 chemistry for PS removal etch. Unfortunately, pitch-walking appeared when we over-etched the PS domains. This is severe when the BCP film thickness is thinner. The Ar/O2 process give lollipop (undercutting) structure.
5
BT. Chan / Sept. 2016
CONFIDENTIAL
POST-SIN ETCH: IMPACT OF BCP FILM THK.
Thinner BCP film is preferable
PS removal = 40s
PS removal = 50s
Pitch-walking • Si3N4 etch
All wafers received 6x SIS treatment
PS removal = 60s
PS removal = 70s
PS removal = 80s
PS removal = 90s
28nm
35nm
• Cannot transfer AlOx lines into Si3N4. • Line roughness increased
45nm
* D12 was 60s PS removal on full wafer. 6
BT. Chan / Sept. 2016
CONFIDENTIAL
POST-SIN ETCH: IMPACT OF SIS CYCLES
Pattern transfer into Si3N4 is feasible without AlOx BT etch, that implied no infiltration in neutral (brush) layer.
PS removal = 40s
PS removal = 50s All wafers has 35nm BCP film thickness
3 cycles
• Pattern transfer into SiN • Pitch-walking issue
PS removal = 60s
PS removal = 70s
Higher SIS cycle, roughness PS removal = 80s
PS removal = 90s
6 cycles
9 cycles
7
BT. Chan / Sept. 2016
CONFIDENTIAL
DSA-SIS PATTERN TRANSFER X-PS pinning
Post-SIS treatment
x-PS pinning guide
LiNe flow
When the pitch-walking start?? • • •
Over-etch at PS removal step Over-etch at AlOx Breakthrough (BT) step Si3N4 etch
How deep AlOx can diffuse into PMMA domain?
Root cause?? • • • Pitch-walking issue
x-PS-footing BCP film thickness SIS diffusion depth (loading of SIS process) 8
BT. Chan / Sept. 2016
CONFIDENTIAL
NUL (Hydroxyl-terminated poly(styrene-random-methyl methacrylate) brush, P(S-r-MMA)-OH) will be infiltrated with AlOx
AlOx infiltrate at the top surface of the neutral layer X-TEM courtesy of Daniel Fishman and Alex Oginets of Intel Fab28
Pitch-walking • AlOx diffusion “depth” 9
CONFIDENTIAL
ORIGIN OF THE PITCH-WALKING
Pitch-walking became severe especially after the AlOx Breakthrough (BT) and Si3N4 etch. One of the main factors that we identified was the impact of the AlOx SIS diffusion depth into the PMMA domain.
Si3N4 layer open
As we noticed, higher the SIS diffusion depth (loading) will eventually increase the risk of the pitch-walking issue PostSIS
10
BT. Chan / Sept. 2016
CONFIDENTIAL
STEP-BY-STEPS
By careful optimization on the SIS loading, we could eliminate the pitch-walking during the pattern transfer. However, we did observe the 1-2nm CD bias due to the pitch-walking We can strip the AlOx by BCl3 plasma or wet etch (TMAH or APM).
Initial
40s PS removal
15s AlOx BT
35s SiN
30s dry AlOx removal
20s Si etch
Ar/O2
Cl2/O2/He
CF4/CHF3/O2
BCl3
HBr/SF6/O2
11
BT. Chan / Sept. 2016
CONFIDENTIAL
NEW APPROACH IS NEEDED
We need to find a new solution to:
Drawbacks / limitations with current x-PS guiding DSA LiNe flow approach.
mitigate the pitch-walking issue during pattern transfer. establish an integration friendly approach for future technology node
Pattern transfer: susceptible to pitch-walking issue x-PS under-layer: Coating incompatibility with SoG liked hardmask Poor stack reflectivity when used with standard hardmasks. 13nm Si3N4 hardmask: it was not a planarizing layer, and can only achieve low stack reflectivity when deposited directly on silicon substrate
x-PMMA under-layer offer better reflectivity and compatible with SoG liked hardmask. 12
