Dynamic Logic

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Circuits. Lecture 19. Dynamic Logic. EE141. 2. EECS141. 2. Lecture #19. Administrative Stuff. ❑ Project phase 1 due on Thursday. ▫ Report template posted on ...
EE141-Fall 2007 Digital Integrated Circuits

Dynamic Logic Lecture 19 Dynamic Logic

EE141 EECS141

Lecture #19

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Administrative Stuff

Dynamic CMOS

‰ Project

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phase 1 due on Thursday

ƒ Report template posted on the web ‰ Midterm

2 next Tuesday

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Lecture #19

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In static circuits, at every point in time (except when switching) the output is connected to either GND or VDD via a low resistance path. ƒ fan-in of n requires 2n (n N-type + n P-type) devices

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Dynamic circuits rely on the temporary storage of signal values on the capacitance of high impedance nodes. ƒ only requires n + 2 (n+1 N-type + 1 P-type) transistors

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Class Material ‰ Last

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Dynamic Gate

lecture

Clk

Clk

Mp

ƒ Pass-transistor logic ‰ Today’s

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Lecture #19

Mp

Out In1 In2 In3

lecture

ƒ Dynamic logic ‰ Reading

Clk

Out

CL

A

PDN

C B

Me

ƒ Chapter 6

Clk

Me

Two phase operation Precharge (CLK = 0) Evaluate (CLK = 1) EE141 EECS141

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Dynamic Gate Clk

LE of Dynamic Gates Clk

Mp

off

Mp on

Out In1 In2 In3 Clk

CL

B Clk

Me

Clk

off

Me on

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Once the output of a dynamic gate is discharged, it cannot be charged again until the next precharge operation. ‰ Inputs to the gate can make at most one transition during evaluation.

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Output can be in the high impedance state during and after evaluation (PDN off), state is stored on CL 8

Overall power dissipation usually higher than static CMOS ƒ no static current path ever exists between VDD and GND (including Psc) ƒ no glitching ƒ higher transition probabilities ƒ extra load on Clk

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PDN starts to work as soon as the input signals exceed VTn, so VM, VIH and VIL equal to VTn

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Needs a precharge/evaluate clock

ƒ low noise margin (NML) 8

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Issues in Dynamic Design 1: Charge Leakage

Properties of Dynamic Gates ‰

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Properties of Dynamic Gates

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Lecture #19

Cgate = LE =

Cgate = LE =

Conditions on Output

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CL

A

C

Two phase operation Precharge (Clk = 0) Evaluate (Clk = 1)

‰

CL

In

B Clk

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Out

Out

A

PDN

Clk

Clk

1 Out ((AB)+C)

Logic function is implemented by the PDN only ƒ number of transistors is N + 2 (versus 2N for static complementary CMOS)

Full swing outputs (VOL = GND and VOH = VDD) ‰ Non-ratioed - sizing of the devices does not affect the logic levels ‰ Faster switching speeds

CLK Clk

Mp

Out

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ƒ reduced load capacitance due to lower input capacitance (Cin) ƒ reduced load capacitance due to smaller output loading (Cout) ƒ no Isc, so all the current provided by PDN goes into discharging CL

CL

A Clk

Me

Evaluate

VOut Precharge

Leakage sources

Dominant component is subthreshold current EE141 EECS141

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Solution to Charge Leakage

Charge Sharing Example

Keeper Clk

Mp

Mkp

A

CL

Out

B Clk

Me

Same approach as level restorer for pass-transistor logic

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Dynamic Gate VTC

Charge Sharing VDD

Clk

Clk

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Mkp

Out CL

A

Out

Out

CL

•Complete charge share: • QCa = VOutCa ∆QCL = -VOutCa

X

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Charge initially stored on CL

Clk

ƒ CA previously discharged

Mp

Clk

Me

Me

Æ ∆VOut = -VDDCa/(Ca+CL) Ca

Cb

•Incomplete charge share: • QCa = (VDD-VTN*)Ca ∆QCL = -(VDD-VTN*)Ca Æ ∆VOut = -(VDD-VTN*)Ca/CL

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Clk

Out

Mp

Mkp

Clk Out

A

CA

B

CB

Clk

When A rises, this charge is redistributed (shared) between CL and CA ‰ Makes Out drop below VDD ‰

Lecture #19

Mb

CL

B=0 Clk

B=0

Solution to Charge Sharing

A

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Ma

A

Me

Issues in Dynamic Design 2: Charge Sharing ‰

• Two cases: • Ma stays on – complete charge share • Ma turns off – incomplete charge share

Mp

Clk

Mp

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• Keeper helps a lot • Can still get failures if Out drops below inverter Vsw • Another option: precharge internal nodes • Increases power and area EE141 EECS141

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Issues in Dynamic Design 3: Clock Feedthrough

Backgate Coupling Effect 3

Mp

Out

A

CL

B Clk

Me

2

Voltage

Clk

Coupling between Out and Clk input of the precharge device due to the gate to drain capacitance. So voltage of Out can rise above VDD. The fast rising (and falling edges) of the clock couple to Out.

Out1 1

Clk

0

In

Out2

2

Time, ns

-1 0

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Clock feedthrough

coupling ‰ Substrate coupling ‰ Minority charge injection ‰ Supply noise (ground bounce)

2.5

In1 1.5 Voltage

In3

In & Clk

0.5

In4

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‰ Capacitive

Clk

In2

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Other Effects

Clock Feedthrough Out

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Out

Clk

-0.5 0

0.5

1

Time, ns

Clock feedthrough EE141 EECS141

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Issues in Dynamic Design 4: Backgate Coupling

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Mp

A=0

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arithmetic

ƒ Adders

Out1 =1 CL1

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Next Lecture ‰ Digital

Clk

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Out2 =0 CL2

‰ Domino

In

Logic

B=0 Clk

Me

Dynamic NAND EE141 EECS141

Static NAND

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