ELE 412: Semiconductor Devices

ELE 412: Semiconductor Devices (Fall-2008)

Team Lecturer

Teaching Assistant

Dr Ayhan Ozturk

None

Room Number: 3111

Room Number:

Office Phone: 0212 285 35 54

Office Phone:

E-mail: [email protected]

E-mail:

URL: http://atlas.cc.itu.edu.tr/~ozayan

URL: http://atlas.cc.itu.edu.tr/~

Office Hours: Tuesday, 17:00-17:30;

Office Hours:

Friday,

16:00-17:30

Course CRN: 11267 Prerequisites: None Classroom: D5301 Course Hours: Tue, 14:00-17:00

Timing Calender: September the 15th, 2008 - January the 02th, 2009 Fall Term: • •

Lectures: 12 weeks Exams: 2 weeks

Attendance: •

8 Weeks Lectures + 2 Weeks Exams

•

Student cannot leave the room up to end of the lecture hour

Assignments are due: 1 week (unless otherwise specified), after issuing

Examination Quizzes:

Books and notebook are closed

Midterm and Final:

Books and notebook are closed Lecture notes (slide handouts ) can be only used during the examination.

Week#

Midterm Exam#1

Midterm Exam#2

Quiz#1

5

10

14

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U n i v e r s i t y

Dr Ayhan Ozturk

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Grading ELE 412

Number of Exams / Assignments

Partial Weight

Total Weight

Midterm Exam

2

20%

40%

Quizzes

1

08%

08%

Assignments1

3

4%

12%

Ethics

1

+5p

+5p

ABET Paper

For each

+1p

Final Exam

1

40%

40%

1: In case of cancelation of assignments, their points will be added to midterm exams.

Over All Class Assessment: Bell Curve System

Course Objectives At the end of the course, students should be able • • •

To understand clearly the basic principles of semiconductor devices To understand clearly effects of various processes on device characteristics To design new semiconductor devices

Tentative Outlines Lecture#1: Semiconductor Fundamentals •

Introduction

•

Crystal structures

•

Bohr’s Atom Model

•

Energy band diagram

•

Terms

Lecture#2: Carrier Populations •

Terms

•

FD Distribution Function

•

Density of States

•

Electron population

•

Hole population

•

Fermi Levels

Lecture#3: Macroscopic Carrier Transport Dr Ayhan Ozturk

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•

Transport Mechanisms

•

Scattering events

•

Generation and Recombination Processes

•

Transport Characteristics

•

Drift velocity and mobility

•

Conductivity and Resistivity

•

Drift and Diffusion Current Densities

•

Transport Models

Lecture#4 pn Junctions •

Layout and Doping Profile

•

Electrostatic Characteristics

•

Energy Band Diagrams

Lecture#5: Non-equilibrium state of pn-junction •

Forward biasing characteristics

•

Reverse biasing characteristics

•

Metal-Semiconductor Junctions

•

Heterostructures

Lecture#6: Metal/Oxide/Semiconductor Stacks •

Band Diagrams

•

Work functions

•

Flat-band voltage

•

MOS Capacitor

•

MOS Capacitor Operation Modes

Lecture#7 MOS Transistor (MOSFET) •

Fundamentals

•

MOS Capacitor

•

I-V Characteristics

•

Modelling

•

Oxide Charges

Lecture#8: More on MOSFET •

Threshold Voltage Control

•

Scaling Theory

•

Secondary Effects

Lecture#9: pn-Junctions I&V •

I-V characteristics

•

Generation-Recombination Currents

•

Transient Characteristics

Lecture#10: Bipolar Junction Transistor (BJT) •

Fundamentals

Dr Ayhan Ozturk

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•

I-V Characteristics

•

Transient Characteristics

•

Modelling

Lecture#11: Secondary effects in BJTs •

Early effect

•

Kirk effect

•

High injection

•

Current crowding

•

Non-uniform doping

•

Band gap narrowing

•

BJT scaling

•

BJT Ebers-Moll macro model

Lecture#12: Miscellaneous issues on BJT •

New type of transistors

•

New device paradigms

•

Low temperature device operation

•

Semiconductor characterisation

Text Books [1] Anderson, B L, Anderson, R L, Fundamental of Semiconductor Devices, McGraw-Hill, 2005. [2] Yang, Edward S., Microelectronic Devices, Singapore: McGraw-Hill, 1988.

Ancillaries Some Proprietary Software Packages: • • • • •

PISCES (Stanford University) MINIMOS (Technical University of Vienna) DAMOCLES (IBM) ATLAS (Silvaco: www.silvaco.com ) MEDICI (Synopsys: www.synopsys.com)

Academic Ethics All assignments should be student own work. Simply copping someone else’s homework is unethical. It will be considered as cheating. All kind of cheating will be punished. •

Students are encouraged to discuss the problems together.

•

It is responsibility of each student to save his/her work.

•

Cheating in any work brings zero point

•

Signing in for someone else drops lecture visa

Dr Ayhan Ozturk

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Dissection of Ethics Points(+5p) • • •

Original HWs: Original Exams: Attendance:

30% 30% 40%

Bibliography [1] Leblebici, D, Elektronik Elemanlari, IST: Sistem, 2002. [2] Streetman, Ben G., Solid State Electronics Devices, 4th Ed., NJ: Prentice-Hall, 1995. [3] Pierret, R F, Semiconductor Device Fundamentals, MA: Addison-Wesley, 1996. [4] Brennan, K, Introduction to Semiconductor Devices, NY: Cambridge University Press, 2005 [5] Taur, Y, Ning, T, Fundamentals of Modern VLSI Devices, NY: Cambridge University Press, 1998. [6] Fonstad, Clifton G., Microelectronic Devices and Circuits, Singapore: McGraw-Hill, 1994. [7] Dutton, R. W., and Yu, Z , Technology CAD, Mass: Kluwer, 1993. [8] Roulston, D J, Bipolar Semiconductor Devices, NY: McGraw-Hill, 1990. [9] Rechard, Muller RS, and Kamins, T I, Device Electronics for Integrated Circuits, NY: Wiley, 1986. [10] Cilingiroglu, U, Systematic Analysis of Bipolar and MOSFET Transistors, Mass: Artech House, 1993. [11] Neamen, D A, Semiconductor Physics and Devices, NY: McGraw-Hill, 2003. [12] Sze, S. M., Physics of Semiconductor Devices, 2nd Ed., Singapore: Wiley, 1981. [13] Wang, Shyh, Fundamentals of Semiconductor Theory and Device Physics, NJ: Prentice-Hall, 1989. [14] Sah, C-T, Fundamentals of Solid-State Electronics, Singapore: World Scientific, 1991. [15] Lundstrom, M, Fundamentals of Carrier Transport, 2nd ed, UK: Cambridge University Press, 2000.

Dr Ayhan Ozturk

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