the B.S. degree from Columbia University, NY, in 1965 and the M.S. and Ph.D. degrees ... Deparments, and Director of the Center for High Technology Materials.
IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 38, NO. 8, AUGUST 2002
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Introduction to the Feature Section on Growth of Heterostructure Materials on Nanoscale Substrates
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ETEROSTRUCTURED materials are important—and now often indispensable—enablers of a wide range of electronic and optoelectronic semiconductor devices. Heterojunctions play a dominant role in quantum effect devices by providing carrier and photon confinement, enabling tunneling transport, and providing a broad gain spectrum. The papers in this Feature Section provide a snapshot of some new approaches to heteroepitaxy that exploit micro- and nanoscale features, created by both “bottom-up” self-assembly and “top-down” lithographic techniques. These approaches promise further significant device improvements by relaxing the traditional restrictions imposed by defect formation in non-latticematched material systems and they will eventually allow highly mismatched semiconductors to be integrated monolithically. Drucker discusses the growth of self-assembled Ge:Si quantum dots, investigating both the morphological and optical/electronic properties as a function of growth parameters. Ichikawa investigates 10-nm nanostructures, in the same material system, that are defined using ultrathin SiO technology. Buttard et al. also investigate the Ge:Si system using molecular hydrophobic bonding of ultra-thin Si layers to provide self-assembled nanoscale dislocation networks, confined to the interfacial region, leading to a periodic strain field that extends to the growth interface and controls the nucleation of the Ge quantum dots. Roskowski et al. extend the understanding of pendeo-epitaxy for the GaN:SiC system
to achieve marked reductions in the dislocation density in this technologically important system. Hersee et al. investigate the use of nanoheteroepitaxy—growth on lithographically defined nanoscale seeds, taking advantage of both strain partitioning between the growing film and the nanoscale substrate and the local presence of a free surface at the nanoscale boundaries, to modify defect formation in the GaAs:Si and GaN:Si systems. These approaches are evolving and maturing. As they move from materials science studies to device structures, they promise to improve the performance of existing devices and to offer new capabilities and new functionality in electronics and optoelectronics. STEVEN R. J. BRUECK, Guest Editor University of New Mexico Center for High Technology Materials Albuquerque, NM 87106 USA STEPHEN D. HERSEE, Guest Editor University of New Mexico Center for High Technology Materials Albuquerque, NM 87106 USA DAVID ZUBIA, Guest Editor University of Texas Electrical Engineering Department El Paso, TX 79968 USA
Publisher Item Identifier 10.1109/JQE.2002.801646.
Steven R. J. Brueck (S’63–M’71–SM’89–F’93) was born in New York City in 1944. He received the B.S. degree from Columbia University, NY, in 1965 and the M.S. and Ph.D. degrees from the Massachusetts Institute of Technology (MIT), Cambridge, in 1967 and 1971, respectively, all in electrical engineering. From 1971 to 1985, he was a Member of the Technical Staff at MIT Lincoln Laboratory. In 1985, he moved to the University of New Mexico at Albuquerque, where he is currently a Professor in the Electrical and Computer Engineering Department and the Physics and Astronomy Deparments, and Director of the Center for High Technology Materials. His current research interests include nanoscale lithography, the physics of nanostructures, the nonlinear optics of poled glasses, and semiconductor laser physics.
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IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 38, NO. 8, AUGUST 2002
Stephen D. Hersee (SM’96) was born in Hastings, U.K., in 1950. He received the B.Sc. degree (with first-class honors) in 1968 and the Ph.D. degree in 1975, both from Brighton Polytechnic, Brighton, U.K. He was with The Plessey Co. Ltd. (U.K.) from 1975 to 1980, Thomson CSF (France) from 1980 to 1986, and General Electric (Syracuse, NY) from 1986 to 1991. He joined the University of New Mexico at Albuquerque in 1991, where he is currently a Professor in the Electrical and Computer Engineering Department. He teaches courses in semiconductor materials, advanced heterojunction devices, and semiconductor process technology. He is also a member of the Center for High Technology Materials. His research interests include novel semiconductor materials and heteroepitaxy for advanced materials and devices.
David Zubia was born in Delicias, Chihuahua, Mexico, in 1964. He received the Bachelor’s and Master’s degrees from the University of Texas at El Paso in 1989 and 1993, respectively, and the Ph.D. degree in electrical engineering from the University of New Mexico (UNM) at Albuquerque in 2000. His thesis work involved the heteroepitaxy of lattice-mismatched materials on nanopatterned substrates and led the development of nanoheteroepitaxy. In 1993, he joined Golden Photon, Inc (GPI), Golden, CO, where his research involved investigation of the degradation mechanisms in CdS/CdTe solar cells. In 2000, he joined the University of New Mexico as Research Assistant Professor and Manager of the Crystal Growth Facility at the Center for High Technology Materials. His research included the utilization of nanopatterned substrates for integration of compound semiconductors with silicon, the development of radiation hard semiconductors, and GaInNAs vertical-cavity surface-emitting lasers. He taught classes in silicon VLSI technology while at UNM. In 2001, he joined the University of Texas at El Paso as an Assistant Professor, where his current research interests include studying the nanoscale aspects of materials and developing nanotechnology to create novel semiconductor materials and devices. This includes scientific studies of nucleation and coalescence of semiconductor nanocrystals and strain relief in nanoporous substrates. His technological interests include the development of small-, direct-bandgap semiconductor alloys, that are lattice and thermodynamically matched to silicon VLSI, the development of advanced materials utilized for energy cells, and the creation of novel nanodevices. Dr. Zubia is a Guest Editor for the IEEE JOURNAL OF QUANTUM ELECTRONICS. He is a Ford Foundation Fellow, Chair of the Third International Conference on Alternative Substrate Technology, and a member of the American Association for Crystal Growth.
