Optically-Controlled Optical Gate Using a Double Diode ... - Stanford EE
Recommend Documents
recovery time is based on diffusive conduction. Modulation of reflectivity from 0.3 to 0.6 and back again in about 50 ps was demonstrated using a 750 fJ control ...
show that the latency of optical interconnects can be comparable to or even less than .... required from later stages, hence reducing the latency. This circuit was ...
Rm. 4B-401, AT&T Bell Laboratories. Holmdel, NJ07733- ... semiconductors near the center of the Brillouin zone. For all of the .... essentially the same as a set of independent wells, and it is more useful to call the structure a multiple quantum ...
Demonstration of an Optoelectronic Dual-Diode Optically Controlled. Optical Gate with a 20 Picosecond Repetition Period. M. B. Yairi, H.V. Demir, C.W. Coldren, ...
Intel Strategic Technology, Intel Corporation, Santa Clara, California 95052. Abstract: We present a dual-diode, InGaAsP/InP quantum-well modulator.
We have demonstrated a guided-wave all-optical diode based on engineered quasiphase Matching in a LiNbO3 channel waveguide. For input peak powers ...
Interleaved-Contact Electroabsorption. Modulator Using Doping-Selective. Electrodes with 25°C to 95°C Operating. Range. K. W. Goossen, J. E. Cunningham, ...
Jul 20, 2015 - Gate-controlled diode structure based electro-optical interfaces in standard silicon-CMOS integrated circuitry. KAIKAI XU,1,* HAITAO LIU,2.
Abstract. A low-power, surface-normal optically controlled optical gate that incorporates two stacked. AlGaAs diodes has been tested using both picosecond and ...
W. H. Knox, D. A. B. Miller, T. C. Damen, D. S. Chemla, and C. V. Shank. A T& TBeII ..... assistance of J. E. Henry, F. A. Beisser, and D. W. Taylor and important ...
in dense wavelength-division-multiplexed (DWDM) transmission ... by using a wider optical bandwidth, by increasing spectral ... one photon to the noise variance [12] (if both signal and noise are expressed in terms of photon number), yielding a chann
amplifier. Lock-in Amplifier. Chopper reference signal λ. 2. Halfwave plate. Fig. 1: The pump-probe setup used in this experiment. In this diagram, PBS denotes a ...
a monostable multivibrator. Having demonstrated the NOR gate operation, we now examine the design criteria for the parameters chosen in our experiment.
written permission. Discuss GATE 2011 question paper at www.gatementor.com.
1. Q. No. 1 – 25 Carry One Mark Each. 1. Roots of the algebraic equation 3. 2.
Oct 4, 2007 - Passive all-optical diode using asymmetric nonlinear absorption. Reji Philipa). Physics Department, University of Massachusetts, Boston, ...
The analysis is valid for the delivery of information with electromagnetic waves under arbitrary .... act sum rule for the strengths of the connections between.
1Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA ... 7.3 dB at 1457 nm for a 10 V swing, and exceeds 3 dB from 1441 nm to.
designed splitters and fibers, but we would probably agree that, no matter what we did to it, one cubic micron of glass would not be enough for this job. If asked ...
Sep 2, 2011 - The dotted red line denotes the points with 2w0/d = 0.7. ..... âDescription and evaluation of the FAST-Net smart pixel-based optical.
Preprint of D. A. B. Miller, "Communicating with Waves Between Volumes ... to the diffraction angle of a cone converging from the entire first surface area, and deduces the ... Neither of these previous approaches [1][2] tell us anything about .....
Mona Jarrahi, David A. B. Miller, R. Fabian W. Pease, Thomas H. Lee. SMIRC Lab, Stanford University, Stanford, CA, 94305-4070. Tel: (650) 497-0565, Fax: ...
Aug 2, 1982 - D. A. B. Miller, D. S. Chemla, D. J. Eilenberger, and P. W. Smith ..... âR. Dingle, W. Wiegmann, and C. H. Henry, Phys. Rev. Lett. 33, 82",. (1974).
expansions of solutions of differential equations, a ubiquitous line of attack in many areas and ...... where the equals
Electrical Engineering Department. Stanford University ..... Anyone working in signal processing and communications. â¢
Optically-Controlled Optical Gate Using a Double Diode ... - Stanford EE
David A.B. Miller, and James S. Harris, Jr. Ginzton Laboratory, 450 Via Palou, Stanford University, Stanford, CA 94305-4085. Abstract: A new device concept ...
Paper ThN2, LEOS’99, 12th Annual Meeting of the IEEE Lasers and Electro-Optics Society, San Francisco, Nov. 8 – 11, 1999
Optically-Controlled Optical Gate Using a Double Diode Structure Micah B. Yairi, Hilmi V. Demir, Chris W. Coldren, David A.B. Miller, and James S. Harris, Jr. Ginzton Laboratory, 450 Via Palou, Stanford University, Stanford, CA 94305-4085
Abstract: A new device concept enabling ultra-short optically controlled optical gating is demonstrated. Using a dual-diode GaAs multiplequantum well (MQW) structure, low power surface-normal switching times of ~10 ps are achieved in this proof-of-principle device. Introduction: Controlling optical data streams has grown in increasing importance in recent years as fiber optics, telecommunications, and the Internet have gained tremendous popularity. A variety of methods are being pursued to encode, decode, and switch optical data, from all-fiber technologies to electronic detection and re-transmission. We recently presented a novel optoelectronic device, an optically-controlled optical gate, able to control optical reflection or absorption on a 50 ps time scale with low optical control energies (e.g.
