VLSI Design, 2002 Vol. 15 (4), pp. 679
VLSI Design Special Issue on Semiconductor Device Modeling CARL L. GARDNER* Department of Mathematics, Arizona State University, Tempe, AZ 85287-1804, USA (Received 1 May 2001; Revised 1 April 2002)
INTRODUCTION This issue of VLSI Design is devoted to modeling and simulation of ultra-small scale classical and quantum effects in state-of-the-art semiconductor devices. The articles gathered here present simulations of a wide variety of contemporary semiconductor devices using both classical and quantum transport models; mathematical
analysis of charge transport; and numerical methods that span the spectrum from modern hyperbolic finite difference methods for the hydrodynamic model to Monte Carlo methods for the Boltzmann transport equation. Semiconductor device modeling—as these articles demonstrate— continues to involve a broad range of interdisciplinary approaches combining electrical engineering, applied mathematics, numerical analysis, and device physics.
*Corresponding author. Tel.: þ 1-480-965-0226. Fax: þ 1-480-965-0461. E-mail:
[email protected] ISSN 1065-514X print/ISSN 1563-5171 online q 2002 Taylor & Francis Ltd DOI: 10.1080/1065514021000012282
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