70dBm EMI Detection Circuits in 0.18µm - CiteSeerX

A Stretchable EMI Measurement Sheet with 8 x 8 Coil Array, 2V Organic CMOS Decoder, and -70dBm EMI Detection Circuits in 0.18µm CMOS K. Ishida, N. Masunaga, Z. Zhou, T. Yasufuku, T. Sekitani, *U. Zschieschang, *H. Klauk, M. Takamiya, T. Someya, and T. Sakurai University of Tokyo *Max Planck Institute

Outline z Background & motivation z Stretchable EMI measurement sheet Direct Si-organic circuits collaboration

z 2V organic CMOS decoder circuit z Stretchable interconnect z Si CMOS EMI measurement circuit

z Measurement results z Conclusion 2

Increasing EMI problems z Technology trends of electronic devices z RF signals and clock pulses of digital ICs are in the same frequency range. z The increase of LSI power consumption causes the increase of noise emission. z Electronic devices have 3D-structures and packaging is dense.

Î Locating EMI sources is getting difficult. 3

Motivation of EMI measurement sheet Conventional

Probe EMI

Scan

Proposed

Wrap

Analog DC to DC converter Magnetic field probe

Difficult to locate the EMI source

EMI measurement sheet

Easy to locate the EMI source 4

Technology requirements

EMI measurement sheet

zWrap 3D-structures ÎStretchable, flexible zLarge area decoder circuit Î2V organic CMOS zInterconnection ÎStretchable interconnect zPick up EMI up to 1GHz ÎSi CMOS LSI

Direct Si-organic circuits collaboration 5

Outline z Background & motivation z Stretchable EMI measurement sheet Direct Si-organic circuits collaboration

z 2V organic CMOS decoder circuit z Stretchable interconnect z Si CMOS EMI measurement circuit

z Measurement results z Conclusion 6

A0 Sel

Sel 7 Sel 6

PCB Si LSI

Out 6 2x2 EMI meas. circuits Clock

4 x 4 PCBs Sel 1 Sel 0

Out 7

Out 1 PCB

Si LSI

Stretchable interconnect

Clock

Out 0

Organic CMOS column selector

A1

2 x 2 Antenna coils

A2

Organic CMOS row decoder

System block diagram

Out

7

Prototype of EMI measurement sheet Rubber sheet (Silicone elastomer)

Antenna coil 12cm

Si CMOS LSI EMI measurement circuit Stretchable Interconnect (CNTs)

2V organic CMOS decoder circuits 8

Outline z Background & motivation z Stretchable EMI measurement sheet Direct Si-organic circuits collaboration

z 2V organic CMOS decoder circuit z Stretchable interconnect z Si CMOS EMI measurement circuit

z Measurement results z Conclusion 9

Device structure of organic CMOS Gate length (20µm)

Gate width (50µm)

Au (Drain) evaporation Pentacene (pMOS) NTCDI (nMOS) evaporation

Au (Source)

SAM (2.1nm) dip-coating, drying Al (Gate) evaporation

AlOx (3.6nm) oxygen plasma

Polyimide or Si Gate oxide thickness (~6nm) Î2V operation

SAM:Phosphonic acid self-assembled monolayers NTCDI:Fluoroalkyl naphthalenetetracarboxylic di-imide H. Klauk, et al., Nature, vol. 445, 2007.

10

Organic CMOS inverter measurement Static characteristic 2V

VOUT

W/L=50μm/20μm (nMOS, pMOS)

VOUT [V]

VIN

2 Gain=42 1

0

0

1

2

VIN [V]

Inverter gain of 42 is achieved with 2V. Organic CMOS can drive Si CMOS directly. 11

Organic CMOS decoder circuit 3 to 8 decoder schematic A2 A2 A0 A0 SEL Sel. 7 Sel. 6 Sel. 5

4.6mm

Microphotograph

20.2mm

Sel. 4 Sel. 3 Sel. 2 Sel. 1 Sel. 0 12

Outline z Background & motivation z Stretchable EMI measurement sheet Direct Si-organic circuits collaboration

z 2V organic CMOS decoder circuit z Stretchable interconnect z Si CMOS EMI measurement circuit

z Measurement results z Conclusion 13

Process of stretchable interconnect Carbon nanotubes (CNTs)

> 4 mm

Ionic liquid (BMITFSI) Grinding to disentangle CNTs

Fluorinated copolymer

CNTs dispersed gel Stirring / Sonication

Air-drying Stretchable interconnect film BMITFSI:1-butyl-3-methyl imidazoliumbis (trifluoromethanesulfonyl) imide T. Sekitani, et al., Science, vol. 321, 2008. 14

Demonstration of stretchability

30mm, 12Ω

Pull

42mm, 17Ω

Stretch (+40%) 15

Outline z Background & motivation z Stretchable EMI measurement sheet Direct Si-organic circuits collaboration

z 2V organic CMOS decoder circuit z Stretchable interconnect z Si CMOS EMI measurement circuit

z Measurement results z Conclusion 16

How do you measure EMI ? Target EMI noise 30MHz to 1GHz (CISPR)

Capture noise waveform ADC

X Expensive process X Clock distribution & interference X Unsuitable for arrayed system

10GHz or higher?

Convert to DC (proposed) Rectifier

9 Relaxing clock speed 9 No interference 9 Suitable for array

Slow clock CISPR: Comité International Spécial des Perturbations Radioélectriques 17

Schematic of EMI measurement LSI Target EMI noise 30MHz to 1GHz Sample/Hold PCB

Si LSI Differential amps

Rectifier VAMP

Comparator VSH

VOUT

VRECT Antenna coil

≈70dB@100MHz (µVÎmV)

Reset Convert EMI noise to DC voltage (VSH) Î Relaxing clock speed No clock distribution & interference issue

VREF Comp. clock. (100kHz) 18

Operation of EMI measurement Small EMI

VAMP

V Amplified ≈70dB V Rectified

VRECT V Sampled & held

VSH (DC out)

t V VREF t

V “L” “L”“L”“L” “L”

V

t Rectified Converted to DC t

VREF

Converted to DC

Comp. V clock VOUT

V

Large EMI

t

t

V

t V

All “H”

t VOUT is set to high during each pre-charge cycle.

t t 19

Outline z Background & motivation z Stretchable EMI measurement sheet Direct Si-organic circuits collaboration

z 2V organic CMOS decoder circuit z Stretchable interconnect z Si CMOS EMI measurement circuit

z Measurement results z Conclusion 20

Die microphotograph of Si LSI 0.9 mm

0.18µm CMOS process

0.2mm

2.9 mm

0.9mm 21

Measured Si-organic collaboration VDD=2V

L L H

Stretchable interconnect VDD=2V (12cm) V1 Organic CMOS Si LSI V2

V3

V1 V2 V3 V4

V4

2V 2V 1s

2V organic CMOS enables the direct connection of silicon-organic circuits. 22

Conventional EMI measurement Magnetic field probe Magnetic probe -50dBm@267MHz

Memory module in laptop PC

Output spectrum of the probe

267MHz EMI is observed around memory. 23

Proposed EMI measurement LSI for EMI measurement sheet Comp.Clock(100kHz)

VOUT Reference All low Î No EMI VOUT Antenna coil and LSI for EMI measurement sheet

On the memory 81% high Î EMI detected

EMI around the memory is detected by Si LSI. 24

Movie of proposed EMI measurement

No EMI

EMI detected 25

Calibration for EMI measurement LSI Reference Spectrum analyzer

Signal generator (EMI emulator) Swept sinusoidal wave up to 1GHz

Power spectrum Comp. Clock 100kHz EMI measurement Si CMOS LSI

Oscilloscope

Sweep VREF

EMI measurement LSI is calibrated. ÎEMI power can be determined. 50% pulse density 26

DC output voltage (VSH) [mV]

Measured DC voltage vs. EMI 900 DR 25dB 850 800

3

750

M 0 0

50

0M

Hz

Hz

9

00

z H M

z H 1G

700 650

-80

-70 -60 -50 Magnetic field power [dBm]

-40

EMI up to 1GHz is converted into DC. EMI power can be determined by DC voltage.

27

Magnetic field power [dBm]

Measured frequency response 0 -10 -20 -30 -40

DC output, VSH=850mV

-50 -60

845mV 844mV

-70 -80 100

200 300 500 700 1000 Frequency [MHz]

Frequency response is fairly flat up to 1GHz.

28

Summary of organic devices Pentacene (pMOS) Organic CMOS material NTCDI (nMOS) Supply voltage 2V Inverter gain 42 Gate oxide thickness 6nm Gate width / gate length 50µm / 20µm 0.53 cm2/Vs (pMOS) Mobility 0.03 cm2/Vs (nMOS) Fluorinated copolymer, Stretchable interconnect material CNT Stretchability Resistivity

40% 0.02 Ωcm 29

Summary of Si LSI Silicon LSI technology Supply voltage Minimum detectable noise power

0.18µm CMOS 1.8V -70dBm

Dynamic range

25dB

Maximum detectable noise frequency

1GHz

Sampling frequency

100kHz

Power consumption

110mW

Core area

0.18mm2 30

Conclusion z Direct Si-organic collaboration for the first time z2V organic CMOS decoder circuit zStretchable interconnect zSilicon CMOS EMI measurement LSI

z EMI noise power is converted into DC voltage. zNMOS rectifier zComparator clock:100kHz not jamming EMI

z Experimentally demonstrated zUp to 1GHz EMI zMinimum noise power:-70dBm zDynamic range:25dB 31