Design and Simulation Equivalent Model of Floating Gate Transistor
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Design and Simulation Equivalent Model of Floating Gate Transistor
Abstract: The [rrst Floating Gate Transistor (metal insulator-metal-insulator structure) was proposed by Kahng and Sze in 1967 [I]. Using the floating gate voltage ...
Design and Simulation Equivalent Model of Floating Gate Transistor Birinderjit Singh Kalyan*, Balwinder Singh** *SVIET, Banur, **CDAC, Mohali SVIET, Banur , CDAC, Mohali
The [rrst Floating Gate Transistor (metal insulator-metal-insulator structure) was proposed by Kahng and Sze in 1967 [I]. Using the floating gate voltage value, capacitive coupling coefficients can be found out at different bias conditions as required. Once these have been found out for a particular technology, the values of the capacitances can be found out and implemented in the given model. The charge present on the gate has to be calculated using the transient models of hot electron programming and Fowler nordheim tunneling. These can be incorporated and thus the model can be extended to the transient conditions as weU. The SPICE equivalent model is designed and Current Voltage characteristics and Transfer characteristics are comparatively analyzed. Keywords: FGMOS: Floating Gate Metal Oxide Semiconductor, FAMOS: Floating Gate Avalanche Injection Metal Oxide Semiconductor, FLOTOX: Floating Gate Thin Oxide.
