16-3 Performance of Threshold Switching in Chalcogenide Glass for 3D Stackable Selector Sungho Kim, Young-Bae Kim, Kyung Min Kim, Sae-Jin Kim, Seung Ryul Lee, Man Chang, Eunju Cho, Myoung-Jae Lee, Dongsoo Lee, Chang Jung Kim, U-In Chung, and In-Kyeong Yoo
Samsung Advanced Institute of Technology, Gyeonggi-Do, Korea, 446-712 Email:
[email protected], Phone: +82-31-280-9763, Fax: +82-31-280-9348 Abstract: The nature of threshold switching (TS) in process. Consequently, TS occurs because of the AsTeGeSiN-based selector devices is comprehensively nonequilibrium population in the high-mobility shallow traps investigated. The scaling of the AC response is limited up to 5 in a high electric field and the nonuniform field distribution ns due to a finite intrinsic delay time. An analytical model along the amorphous layer. On the basis of the underlying TS allows the accurate prediction of the TS nature, which can be physics, a compact analytical model can predict the merged to a numerical circuit simulation for providing subthreshold conduction, TS at VT (threshold voltage), negative differential resistance region from VT to VH (hold essential guideline of the required selectivity performance. Introduction: A 3D stacked RRAM with a selector device is voltage), and on regime, as shown in Fig. 6 (c). This model provides a practical insight into the TS indispensable, as shown in Fig. 1 (a), to overcome the scaling limit of the current NAND flash technology (
