Quantum-mechanical Modeling Of Electron Tunneling ... - IEEE Xplore
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Quantum-mechanical Modeling Of Electron Tunneling ... - IEEE Xplore
AbstractâQuantum-mechanical modeling of electron tunneling current from the quantized inversion layer of ultra-thin-oxide. (
IEEE ELECTRON DEVICE LETTERS, VOL. 18, NO. 5, MAY 1997
209
Quantum-Mechanical Modeling of Electron Tunneling Current from the Inversion Layer of Ultra-Thin-Oxide nMOSFET’s S.-H. Lo, Member, IEEE, D. A. Buchanan, Member, IEEE, Y. Taur, Senior Member, IEEE, and W. Wang, Member, IEEE
Abstract—Quantum-mechanical modeling of electron tunneling current from the quantized inversion layer of ultra-thin-oxide ˚ nMOSFET’s is presented, together with experimen(
