Reactive Ion Etching of SiC Thin Films Using Fluorinated Gases
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Reactive Ion Etching of SiC Thin Films Using Fluorinated Gases
both CF4 + 4% 02 and SF6 + 50% He, the etch rates of Si, SiOZ, and SiC all increase ... 0n the other hand, the etch rate of SiC depends on the ion bombardment ...
