Power Electronics Simulation using PSPICE

10V

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Power Electronics Simulation using PSPICE By Suman Debnath The purpose of this book is to provide a guideline how to simulate power electronics circuits which are very useful in our day to day life. The reader of this book is requested to do practical for verification of the simulation given here and think innovatively while simulation of any circuit. It is possible to analyze the circuit in different ways. This manual is useful for simulation of power electronics circuits (high power as well as low power). This lab manual can be used UG as well as PG scholar. This book is also helpful for doing research in high power electronics and low power electronics circuits (VLSI Circuit).

30KHz

100KHz

‘Power Electronics Simulation using PSPICE’ by Suman Debnath

Dedicated to my parents my father Ramesh Debnath and my mother Manju Debnath. I would like to thank Prof Bidyut kumar Bhattacharyya for his inspiration, Faculties of Electrical and Instrumention Engineering for there support and students of instrumentation engineering, NIT Agartala for showing interest on simulation.

© Suman Debnath, February, 2015

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Bibliography

Mr. Suman Debnath was born on 20th July, 1986, in Agartala, India. He completed his Madhyamik from Resharbagan Higher Secondary School, Agartala in 2004. After that he has completed Diploma in Electrical Engineering from Polytechnic Institute Narsingarh, Tripura in 2007. He received his B.E degree in 2010 from Dr. B.A.M.U. University and M-Tech Degree in 2012 from NIT Agartala and he is currently a PhD Scholar at NIT Agartala and working as a Senior Manager at TSECL. He also serve social work in NGO and serves as a President at Research Scholar Association National Institute of Technology Agartala (RSA-NITA).He has one Patent (patent application number 798/KOL/2014) and many International Journal and Conference (published in IEEE Transaction on CPMT, International Journal of Bioinformatics and Intelligent Control (JBIC), IJASTR, IJEE, IJCA, IJERA, IEEE SCEECS 2012, ICECT 2013 ). He has been awarded in many prestigious awards. Some of these are Dr. B. R. Ambedkar Memorial Award (2004), POSOCO Power System Award (PPSA-2013). His research interest includes Power Delivery Network and Optimization.

My effort will get success if you get any help like simulating circuit diagram on PSPICE environment from this book. Your suggestion to improve this book will be highly appreciated. Give your feedback by mailing me.

e-mail:[email protected] , [email protected] Contact: +91 9862777539 See in the website given here:- https://www.researchgate.net/profile/Suman_Debnath6/ Facebook link:- click here


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Topic Covered on this book 1. In Interdisciplinary nature of power electronics 2. Applications of power electronics 3. What is PSPICE 4. types of circuit analyses using PSPICE 5. Advantages of using PSPICE and Drawbacks 6. Steps to start PSPICE Simulation 7. The units of elements 8. How to give node name (notation) 9. DC Sweep Analysis with example 10. Transient Analysis with example 11. AC Sweep Analysis with example 12. How to find out the Power Delivery Network (PDN) of a Circuit 13. How to connect two terminal without wires 14. Active Filter Circuit with ideal & Real Op-amp 15. How to Start a new project in PSPICE 16. How to add library in part search 17. Parametric Sweep 18. How to check bias point 19. Power Electronics Switches 20. Analogue Component 21. BJT 22. Thyristor 23. Uncontrolled Half wave rectifier 24. Uncontrolled Half wave rectifier with RL Load 25. Uncontrolled Half wave rectifier with RC Load 26. Uncontrolled Half wave rectifier with RL Load & Freewheeling Diode 27. Controlled Half wave rectifier 28. Uncontrolled DOUBLE HALF WAVE RECTIFIER 29. Duel Rectifier With Diode Bridge And Center Tap Secondary 30. HALF WAVE RECTIFIER WITH SERIES RESISTOR 31. RECTIFIER WITH ZENER DIODE 32. 3 phase rectifier 33. Diode Bridge Rectifier 34. single phase diode rectifier using novel passive wave shaping method 35. single phase diode rectifier circuit with series input resonant filter 36. single phase diode rectifier using improved passive wave shaping method 37. Full wave Diode Bridge rectifier with and without capacitor 38. Fourier Analysis of a Pulse Waveform using PSPICE 39. RECTIFIER FOR HIGH VOLTAGES © Suman Debnath, February, 2015

5 5 7 7 7 8 8 10 11 12 15 16 18 18 21 22 22 24 25 25 27 28 33 36 37 39 42 45 46 48 49 50 52 53 54 55 56 59 60 Page 3


40. VOLTAGE QUADRUPLING 41. How to find out netlist of whole simulation 42. Inverter Half Wave 43. Full Bridge Inverter 44. Pulse-Width-Modulation (PWM) and Filter Characteristics 45. Fourier analysis of Pulse-Width-Modulation (PWM) and Filter Characteristics 46. Buck Converter basic circuit diagram 47. Buck Converter 48. Boost Converter 49. SIMPLIFIED MODEL OF DC-DC CUK CONVERTER 50. SIMPLIFIED MODEL CONVERTER DC-DC BOOST (FLYBACK) 51. SIMPLIFIED MODEL OF BUCK-BOOST CONVERTER (FLYBACK) 52. Frita’s and Gome’s Buck Converter-Soft switching 53. PWM Generation using IC555 54. Generation of an AM signal 55. Square wave generator using Op-Amp 56. Sine wave generator using Op-Amp 57. Low power Electronics Application (VLSI) 57.1 PSPICE schematic of CMOS inverter 57.2 CMOS NAND GATE 57.3 Current mirror 57.4 Design and build CMOS Transistor Level Utility Amplifiers 57.5 Comparator 57.6 Design and build CMOS NOR Gate


61 64 65 67 69 70 72 73 74 76 78 79 82 84 87 88 90 91 91 94 96 100 102 105

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1.

Interdisciplinary nature of power electronics Power Electronics has a wide application in almost every engineering discipline. That is why it is so much important now days. In the figure below interdisciplinary nature of power electronics has been shown.

Applications of power electronics Wide range of residential, commercial, and industrial applications, including computers, transportation, aircraft/aerospace, information processing, telecommunications, and power utilities 1. Electrical applications of Power Electronics Power electronics can be used to design ac and dc regulated power supplies for various electronic equipment, including consumer electronics, instrumentation devices, computers, aerospace, and uninterruptable power supply (UPS) applications. Power electronics is also used in the design of distributed power systems, electric heating and lighting control, power factor correction, and static var compensation.


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Electromechanical applications: Electromechanical conversion systems are widely used in industrial, residential, and commercial applications. These applications include ac and dc machine tools, robotic drives, pumps, textile and paper mills, peripheral drives, rolling mill drives, and induction heating.

Electrochemical applications: Electrochemical applications include chemical processing, electroplating, welding, metal refining, production of chemical gases and fluorescent lamp ballasts. Power electronics applications in residential, commercial, industrial, transportation, utility systems, aerospace and telecommunication fields.

a. Residential Refrigeration and freezers Space heating Air conditioning Cooking Electronics (Personal Entertainment Equipment)

Computer,

b. Commercial Heating, Ventilation and Air Conditioning Central Refrigeration Lighting Computers and office equipment Uninterruptible power supply (UPS) Elevators c. Industrial Pumps Compressors Blowers and fans Machine tools (robots) Arc furnace, induction furnaces Lighting Industrial Laser Induction Heating Welding


d. Transportation Traction Control of electric vehicle Electric locomotives Street Cars, trolley buses Subways Automotive electronics including engine control e. Utility systems High voltage DC Transmission (HVDC) Static VAR Compensation (SVC) Supplemental energy sources (wind, photovoltaic), fuel cell Energy storage system Induced draft fans and boiler, feed water pumps f. Aerospace Space Shuttle power supply systems Satellite power system Aircraft Power System g. Telecommunication Battery Charger Power Supplies (dc and ups)

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2. What is PISPICE ? SPICE is a powerful general purpose analog and mixed-mode circuit simulator that is used to verify circuit designs and to predict the circuit behavior. This is of particular importance for integrated circuits. It was for this reason that SPICE was originally developed at the Electronics Research Laboratory of the University of California, Berkeley (1975), as its name implies:

Simulation Program for Integrated Circuits Emphasis. PSpice is a PC version of SPICE (which is currently available from OrCAD Corp. of Cadence Design Systems, Inc.). A student version (with limited capabilities) comes with various textbooks. The OrCAD student edition is called PSpice AD Lite. Information about Pspice AD is available from the OrCAD website: http://www.orcad.com/pspicead.aspx

3. Types of circuit analyses SPICE can do several types of circuit analyses. Here are the most important ones: • Non-linear DC analysis: calculates the DC transfer curve. • Non-linear transient and Fourier analysis: calculates the voltage and current as a function of time when a large signal is applied; Fourier analysis gives the frequency spectrum. • Linear AC Analysis: calculates the output as a function of frequency. A bode plot is generated. • Noise analysis • Parametric analysis • Monte Carlo Analysis

4. Advantage and Drawbacks of PSPICE Drawbacks •

The PSpice Light version has the following limitations: circuits have a maximum of 64 nodes, 10 transistors and 2 operational amplifiers.

•

In full version of PSPICE there is no such limitation.

Advantages of using PSPICE •

PSpice allows multiple plots to be viewed simultaneously, such as voltage, power, etc. Also, specific points, such as a voltage at a certain time, can be selected and marked on the output plot in PSpice,


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•

PSpice contains libraries full of specific components with manufacturer specifications. These components are included so the user may obtain realistic simulation results,

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Very simple to represent any electrical circuit, in particular power-electronic circuits and

•

A wide library of commercial electric components are available.

•

All analyses can be done at different temperatures. The default temperature is 300K.

5. Steps to start PSPICE Simulation

6. The units of elements The values of elements can be specified using scaling factors (upper or lower case): T or Tera (= 1E12); G or Giga (= E9); MEG or Mega (= E6); K or Kilo (= E3); M or Milli (= E-3);

U or Micro (= E-6);

N or Nano (= E-9); P or Pico (= E-12) © Suman Debnath, February, 2015

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F of Femto (= E-15) This specifies same meaning: 225P, 225p, 225pF; 225pFarad; 225E-12; 0.225N PSPICE A brief primer, University of Pennsylvania Department of Electrical and Systems Engineering


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7. How to give node name (notation)


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8. DC Sweep Analysis


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9. Understanding Transient Analysis


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Another circuit for Understanding Transient Analysis © Suman Debnath, February, 2015

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‘Power Electronics Simulation using PSPICE’ by Suman Debnath 0A

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10. Understanding AC Sweep Analysis


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‘Power Electronics Simulation using PSPICE’ by Suman Debnath 100uA

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11. How to find out the Power Delivery Network (PDN) of a Circuit


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12. How to connect two terminals without wires

13. Active Filter Circuit with ideal op-amp.


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‘Power Electronics Simulation using PSPICE’ by Suman Debnath AC Sweep of Filter with Real Op-amp (Filter circuit)

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‘Power Electronics Simulation using PSPICE’ by Suman Debnath 20uA

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14. How to start a new project in PSPICE


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‘Power Electronics Simulation using PSPICE’ by Suman Debnath 15. How to add library in part search

16. Parametric Sweep

Double click on the value (500 Ohms) of the load resistor R1 to {Rval}. Use curly brackets. Add the PARAM part to the circuit


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‘Power Electronics Simulation using PSPICE’ by Suman Debnath Double click on the PARAM part. This will open a spreadsheet like window showing the PARAM definition. You will need to add a new column to this spread sheet. Click on NEW COLUMN and enter for Property Name, Rlval (without the curly brackets).


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17. How to check bias point of BJT


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18. Power Electronics Switches • • • • • • •

BJT MOSFET IGBT GTO SCR TRIAC SiTH

My Computer → Local Disc C → Program files →Orcad →Documents → 19.

lib_list.pdf

Analogue Components • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • •

AF Transistor Average Power Supply Model Bipolar Transistor Bridge Driver Buffer (Analog) Current Regulator Diode Darlington Transistor Demodulator Digital Transistor Diode Diodes and Rectifiers Filter GaAs MESFET Hall-Effect Generators Inductor Instrument Amplifier Insulated Gate Bipolar Transistor Opto-Isolator P-Channel Vertical DMOSFET Photo Diode Photo-Detector Model PIN Diode PNP Bipolar Transistor PNP Bipolar with Schottky-diode Power Amplifier Power Bipolar Transistor Power MOSFET Pressure Sensor Quartz Crystals RF Bipolar Transistor RF Bipolar Transistor RF MOSFET


• • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • •

Isolation Amplifier Junction Field-Effect Transistor LED Diode Magnetic Core MCT Metal Oxide Varistor Miscellaneous Analog Multiplexer (Analog) Multiplier (Analog) N-Channel Dual Gate MOSFET N-Channel MOSFET N-Channel Vertical DMOSFET NPN Bipolar Transistor NPN Bipolar with Schottky-diode NPN RF Bipolar Transistor NTC Thermistor Operational Amplifier Switch Transformer Transistor Array Transmission Line Varactor Diode Video Amplifier Video Fader Voltage Comparator Voltage Reference Voltage Regulator Voltage-Variable Capacitance Diode Zener Diode Bipolar Transistor Junction Field-Effect Transistor Rectifier Page 25


• •

RF Transistor Schottky Diode

• •

Small-Signal Mosfet Silicon-Controlled Rectifier

• • • • • • • • • • • • • • • • • • • • • • • • • •

Programmable Array Logic Pulldown Resistor Pullup Resistor Register Schmitt Trigger Shift Register Translator Bus Expander Frequency divider Identity Comparator Look-Ahead Carry Generator Line Driver Magnitude Comparator Multifunction Multiplier (Digital) Multiplexer (Digital) Parity Generator Priority Encoder PROM Pulse Synchronizer Register Rate Multiplier Shift Register Tranceiver True/Complement

Digital (general, TTL) • • • • • • • • • • • • • • • • • • • • • • • • • •

Adder Address Comparator ALU Buffer (Digital) Capacitive Load Comparator Counter Decoder Delay Encoder Flip-Flop Gate Gate Array Logic Latch Look-Ahead Carry Generator Monostable Multivibrator Multiplexer (Digital) Multiport Register Parity Generator Priority Encoder ADC DAC Data Acquisition Miscellaneous Analog Switch-Mode Regulator Voltage/Frequency Converter


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20. BJT


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21. Thyristor Thyristor turn on characteristics

Analysis Type=Time domain (Transient) Run to time= 4us Start Saving data after= 0 Maximum Step Size=0.1ns Component Pulse Voltage from source.slb library (VPULSE) DC source from source.slb library (VDC) 2N1595 SCR from eval.slb library Analog ground from port.slb library (AGND) Resistors from analog.slb library


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1.0V

‘Power Electronics Simulation using PSPICE’ by Suman Debnath 1.0A

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DC Analysis of SCR


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Fig. gate voltage


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Thyristor turn on characteristics

Analysis Type=Time domain (Transient) Run to time= 4us Start Saving data after= 0 Maximum Step Size=0.1ns 8.0V

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V(R1:1)=Anode Cathode Voltage


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‘Power Electronics Simulation using PSPICE’ by Suman Debnath 600mA

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-I(R)=Anode Current Design and simulation of power electronic circuits Power Electronic Circuits can be classified as: •

DC-DC Converters

•

AC-DC Converters (Rectifiers)

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DC-AC Converters (Inverters)

•

AC-AC Converters

Now design and simulation of each of these circuits will be discussed. These converters are further divided based on number of phase (single phase, three phase, poly-phase) and based on conversion type (Half wave, Full wave) For referring different types of power electronics devices follow the reference[1] ….


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22. Half wave rectifier

Part name Source=VSIN (VOFF=0,VAMP=220,FREQ=50) Resistance=R(R=0.001) Transformer=XFRM_LINEAR (Coupling=0.05,i.e 20:1,(1/20=0.05), if primary is 20 volt then secondary will be 1 volt) Diode=D1N4002 Capacitor=C (15mF) Load resistance RL=R (100) Choose the 0 ground (GND) The transformer has a ratio of 20 to 1. The diode is obviously not an ideal diode but will have a serial resistance RD. At diode ends, voltage reachs twice peak voltage at secondary winding.The formula to determine the capacitance C1 is given by: C= K * (I / Vr), where C is uF, K is 4.8 for halfwave rectifiers and 1.8 for double halfwave rectifiers.I is the current that can deliver power supply in milliamps and Vr is the maximum ripple ammissibile in output voltage V.Ripple obviously occurs with the resistance load connected.For instance, for a ripple allowable of 0.5V and a maximum current up to 1500mA, we 'll have C = 4.8 * 1500 / 0.5 V = 14400uF, around 15mF.


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VSin (voltage source) DIN4002 (diode) R (Resistance) GND_SIGNAL/CAPSYM.

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‘Power Electronics Simulation using PSPICE’ by Suman Debnath 100V

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24. Uncontrolled Half wave rectifier with RL Load

VSin (voltage source) DIN4002 (diode) R (Resistance) L ( Inductor) GND_SIGNAL/CAPSYM


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25. Uncontrolled Half wave rectifier with RC Load

VSin (voltage source) DIN4002 (diode) R (Resistance) C ( Capacitor) GND_SIGNAL/CAPSYM


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26. Uncontrolled Half wave rectifier with RL Load & Freewheeling Diode

VSin (voltage source) DIN4002 (diode) R (Resistance) L ( Inductor) GND_SIGNAL/CAPSYM


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VSin (voltage source) VPULSE (voltage source) 2N1595 (Thyristor) R (Resistance) GND_SIGNAL/CAPSYM


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27. Controlled Half wave rectifier



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‘Power Electronics Simulation using PSPICE’ by Suman Debnath 80mV

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28. Uncontrolled Double Half -Wave Rectifier

PARAMETRIC ANALYSIS WITH DOUBLE HALF WAVE RECTIFIER

•

Part name

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Source=VSIN (VOFF=0,VAMP=220,FREQ=50)

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Transformer= XFRM_LIN/CT-SEC LS_VALUE=400uH)

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Diode= D1N4002

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Capacitor=C (100mF)

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Resistor=R (Rpar)

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PARAMETERS= PARAM

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Choose the 0 ground (GND)

(LP1_VALUE=40mH,

LP2_VALUE=400uH,

In this schematic, with a double half-wave rectifier we have a frequency ripple of 100Hz, that is a 10ms period. Let's perform a parametric analysis in which we see as output voltage increases if resistance load increases, and vice versa the ripple decrease for an higher load. Load ranges from 0.5 to 20 Ohm


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29. DUAL RECTIFIER WITH DIODES BRIDGE AND CENTER TAP SECONDARY

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Part name

•


•

Transformer= XFRM_LIN/CT-SEC (LP1_VALUE=40MH, LP2_VALUE=2MH, LS_VALUE=2MH)

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Diode= D1N4002

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Capacitor= C (C1=1800uF, C2=1800uF)

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This schematic is similar to the halfwave rectifier with the CENTER TAP of transformer between the two electrolytic capacitors, the only difference is the diodes bridge that rectifies both halfwaves. BRIDGE DIODES RECTIFIER


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•

Part name

•


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Resistance=R (R1=0.001)

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Transformer= XFRM_LINEAR (Coupling=0.1,i.e 10:1,(1/10=0.1), if primary is 20 volt then secondary will be 1 volt, L1_VALUE=1000uH, L2_VALUE=10uH)

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Diode= D1N4002

•

Capacitor=C (C1=4.7mF)

•



Page 47


This is the classic configuration of bridge diodes rectifier used to rectify all the two halfwaves. We used a library model transformer in which we set a ratio of 1:10 through values of the inductances to primary and secondary windings: L1=1000u and L2=10u.

30. HALF WAVE RECTIFIER WITH SERIES RESISTOR

Part name •


•

Diode=MBR1045

•

Resistor=R (R1=180, R2=10)

•

Capacitor= C (C1=15mF)

•


In this schematic we have a half-wave rectifier directly connected to 220V.We know that the load has a voltage of 12V, and being 10 Ohm the resistance value, the resistor absorbs a current of 1.2 A. Because to the ends of capacitor (which should withstand to voltage differences over 500V) are 220V, we need a voltage drop of 208V.For this reason we must set a resistance R1 equal to V / I = 208V / 1.2 A = 180 Ohm.WE HAVE SUPPOSED THAT POWER DISSIPATION IS COSTANT IN TIME, OTHERWISE LOAD VOLTAGE CAN CHANGE AND CAN DAMAGE IT.


Page 48


31. RECTIFIER WITH ZENER DIODE

•

Part name

•


•

Diode=MBR320

•

Zener diode=1N4372

•

Resistor=R (R1=1K)

•

Capacitor=C (15mF)

•



Page 49


We can use it when the voltage rectified to the ends of the capacitor is too high for load and we need to decrease it.This is done for circuits that provide to the load up to 100mA. The Zener diode, which must be inversely biased (cathode positive and anode negative) has a voltage drop which is typical of that specific Zener. In this case voltage drop is about 3V, but for other diodes can reach 100V or more. The characteristic of Zener is such that for variations on the current that flows in it, its voltage drop remains constant. The basic parameters of a Zener diode are its Zener current Iz, its voltage drop of Zener Vz and of course the power Wz that it can dissipate and will be given by product Vz * Iz. If we apply to the Zener diode a reverse voltage greater than Vz, obviously we' ll have place a resistance equal to (Vin-Vz)/Iz, where Vin is the voltage that we apply.

32. 3-phase rectifier


Page 50


1.0A

0.5A

0A

-0.5A 0s I(D1)

5ms I(D4)

10ms

15ms

20ms

25ms

30ms

35ms

40ms

45ms

50ms

30ms

35ms

40ms

45ms

50ms

Time

1.0A

0.5A

0A

-0.5A 0s I(D1)

5ms I(D4)

10ms

15ms

20ms

25ms Time


Page 51


33. Diode Bridge Rectifier

160V

120V

80V

40V

0V 0s

20ms

40ms

60ms

80ms

100ms

120ms

140ms

160ms

180ms

200ms

V(D1:2) Time


Page 52


34. Single phase diode rectifier using novel passive wave shaping method

150V

100V

50V

0V 0s

50ms V(D1:2)

100ms

150ms

200ms

250ms

300ms

350ms

400ms

450ms

500ms

550ms

600ms

650ms

700ms

750ms

800ms

Time


Page 53


35. Single phase diode rectifier circuit with series input resonant filter

120V

80V

40V

0V 0s

1s

2s

3s

4s

5s

6s

7s

8s

9s

10s

V(D1:2) Time


Page 54


36. Single phase diode rectifier using improved passive wave shaping method

150V

100V

50V

0V 0s

0.4s

0.8s

1.2s

1.6s

2.0s

2.4s

2.8s

3.2s

3.6s

4.0s

V(D1:2) Time


Page 55


37. Full wave Diode Bridge rectifier with & without capacitor Full wave Diode Bridge rectifier circuit in PSPICE

Full wave Diode Bridge rectifier with capacitor


Page 56


10V

0V

-10V

-20V 0s

10ms V(D1:A,D3:A)

20ms

30ms

40ms

50ms

60ms

70ms

80ms

90ms

100ms

60ms

70ms

80ms

90ms

100ms

60ms

70ms

80ms

90ms

100ms

Time

Input Voltage waveform

20V

10V

0V

-10V 0s V(D1:A)

10ms V(D3:A)

20ms

30ms

40ms

50ms Time

Positive and Negative half of the input waveform

20V

15V

10V

5V

0V 0s

10ms

20ms

30ms

40ms

50ms

V(R1:2) Time

Rectified output waveform of diode bridge rectifier (without capacitor)


Page 57


15V

10V

5V

0V 0s

10ms

20ms

30ms

40ms

50ms

60ms

70ms

80ms

90ms

V(R1:2) Time

Fig: If we connect a Capacitor (c=15mF) across the rectifier output then output waveform becomes steady


Page 58

100ms


38. Fourier Analysis of a Pulse Waveform using PSPICE


Page 59


39. RECTIFIER FOR HIGH VOLTAGES

Part Name Source=VSIN (VOFF=0,VAMP=50,FREQ=50) Resistance=R (R1=390k,R2=390k,R3=390K, R5=0.001) Capacitor= C (C1=30nF, C2=30nF,C3=30nF, C4=4800uF Transformer=XFRM_LINEAR (L1_VALUE=10uH, L2_VALUE=160uH, COUPLING=1) © Suman Debnath, February, 2015

Page 60


Ground Diodes commercially available normally can withstand voltages of order of 3-400 V, if it's necessary rectifier higher voltages we have to place a number of diodes in series.A typical schematic is represented above, where the resistance are high value and can share equally high voltage between diodes absorbing little current. Capacitors serve to reduce possible noise introduced by diodes. 1.0KV

0.5KV

0V

-0.5KV

-1.0KV 0s V(C4:+)

10ms V(R5:2,0)

20ms V(C1:1,0)

30ms

40ms

50ms

60ms

70ms

80ms

90ms

Time

40. VOLTAGE QUADRUPLING

To the ends of couple capacitors C2-C3 we get a voltage differential of 40V, with a maximum current which will be 1/4 respect maximum current of secondary winding.Let's note that this quadrupling multiplier is © Suman Debnath, February, 2015

Page 61

100ms


obtained as two voltage doubler together: C1 D3 D4 C3 and C4 D2 C2 D1. * source FOURMULTVOLTAGE V_V1

N00372 0 AC 220V

+SIN 0 220V 50 0 0 0 D_D1

N00539 N00597 D1N4002

D_D2

N00624 N00539 D1N4002

D_D3

N00512 N00624 D1N4002

X_TX1

N000770 0 N00448 N00624 VoltageQuadrupling_TX1

D_D4

0 N00512 D1N4002

R_R1

N00372 N000770 0.001

C_C1

N00448 N00512 1000u

C_C2

N00597 N00624 1000u

C_C3

N00624 0 1000u

C_C4

N00539 N00448 1000u

.subckt VoltageQuadrupling_TX1 1 2 3 4 K_TX1

L1_TX1 L2_TX1 0.05

L1_TX1

1 2 10uH

L2_TX1

3 4 10uH

.ends VoltageQuadrupling_TX1

VOLTAGE QUADRUPLING


Page 62


40V

20V

0V

-20V 0s V(C2:+)

20ms V(TX1:3,TX1:4)

40ms

60ms

80ms

100ms

120ms

140ms

160ms

180ms

200ms

Time


Page 63


41. How to find out netlist of whole simulation


Page 64


42. Inverter Half Wave

DC Voltage Source= VDC (200Vdc) Gate triggering= Vpulse Resistor=R (R6=1000K, R7=100K,R8=5) SWITCH= IRF150 Diode= D1N4002 Inductor=L (50mH) Capacitor=C (C1=0.022uF, C2=0.022uF) Ground


Page 65


200V

100V

0V

-100V

-200V 0s

10us V(L1:1,R8:2)

20us

30us

40us

50us

60us

70us

80us

90us

100us

Time


Page 66


43. Full Bridge Inverter

DC Voltage Source= VDC (200Vdc) Gate triggering= Vpulse Resistor=R (R6=1000K, R7=100K,R8=5) SWITCH= IRF150 Diode= D1N4002 Inductor=L (50mH) Capacitor=C (C1=0.022uF, C2=0.022uF) Ground


Page 67


6.0V

4.0V

2.0V

0V 0s

5ms

10ms

15ms

20ms

25ms

30ms

35ms

40ms

45ms

50ms

V(R5:2) Time


Page 68


44. Pulse-Width-Modulation (PWM) and Filter Characteristics

PART NAME Voltage source= VPULSE (V1=0,V2=10V, TD=0,TR=0, TF=0,PW=7.5us, PER=10uF) Inductor=L (L1=5uH) Capacitor=C(C1=100uF) Resistor=R (R1=0.5)


Page 69


8V

4V

0V 0s V(V1:+)

50us V(L1:2)

100us

150us

200us

250us

300us

350us

400us

450us

Time

45. Fourier analysis of Pulse-Width-Modulation (PWM) and Filter Characteristics


Page 70

500us

‘Power Electronics Simulation using PSPICE’ by Suman Debnath 8.0V

6.0V

4.0V

2.0V

0V 0Hz V(V1:+)

0.5MHz V(L1:2)

1.0MHz

1.5MHz

2.0MHz

2.5MHz

3.0MHz

3.5MHz

4.0MHz

4.5MHz

5.0MHz

Frequency


Page 71


46. Buck Converter basic circuit diagram

8.0V

6.0V

4.0V

2.0V

0V 0s

5ms

10ms

15ms

20ms

25ms

30ms

35ms

40ms

45ms

V(L1:2) Time


Page 72

50ms


47. Buck Converter

PART NAME Voltage source= Vdc (V1=20) PWM Source=VPULSE (V1=0,V2=5,TD=0,TR=0.01u,TF=0.01us,PW=0.00001s, PER=0.0002) Inductor=L (L1=0.00005H) Capacitor=C(C1=0.00005F) Resistor=R (R1=10) Diode= D1N4002 Switch=IRF150

6.0V

4.0V

2.0V

0V 0s

0.5ms

1.0ms

1.5ms

2.0ms

2.5ms

3.0ms

3.5ms

4.0ms

4.5ms

5.0ms

V(V2:+) Time


Page 73

‘Power Electronics Simulation using PSPICE’ by Suman Debnath 300mV

200mV

100mV

0V 0s

0.5ms

1.0ms

1.5ms

2.0ms

2.5ms

3.0ms

3.5ms

4.0ms

4.5ms

5.0ms

V(L1:2) Time

48. Boost Converter

PART NAME Voltage source= Vdc (V1=10) PWM Source=VPULSE (V1=0,V2=1,TD=0,TR=1ns,TF=1ns,PW=0.5ms, PER=1m) Inductor=L (L1=10mH) Capacitor=C(C1=100uF) Resistor=R (R1=20) Diode= D1N4002 Switch=S


Page 74


25V

20V

15V

10V

5V 0s

5ms

10ms

15ms

20ms

25ms

30ms

35ms

40ms

45ms

50ms

V(D1:2) Time

24V

20V

16V

12V

8V 0s

5ms V(D1:2)

10ms

15ms

20ms

25ms

30ms

35ms

40ms

45ms

50ms

55ms

60ms

65ms

70ms

75ms

Time


Page 75

80ms


49. SIMPLIFIED MODEL OF DC-DC CUK CONVERTER

Part name Voltage source=VDC (12Vdc) Inductor=L (L1=10mH,L2=2mH) Resistor=R (R1=50,R2=0.5, R3=0.5) Capacitor=C (C1=100u, C2=1m) Switch=Sbreak Pulse=VSTIM(Implementation=pulse50k) Diode=BAT68/SIE Ground=Choose the 0 ground (GND)


Page 76


3.0V

2.0V

1.0V

0V 0s

5ms

10ms

15ms

20ms

25ms

30ms

35ms

40ms

45ms

50ms

55ms

V(R3:1) Time

This converter has the same relationship between input voltage and output voltage of buckboost converter, (Vi/Vu = D/(1-D) where D is duty cycle and ranges from 0 to 1 ideally) , with the difference that has two inductors and two capacitors.The advantage of this solution is a ripple in voltage output considerably reduced compared to other types of converters.When the switch is closed inductor L1 start charging itself, when switch is open the voltage at the ends of inductor invert itself, because the current can't immediately drop to zero, (remember costitutive equation of inductor V= L dI/dT, V would be infinite). Current through inductor L1 decrease and load the capacitor C1.When the switch is closed again C1 discharges through L2 to the load.L2 and C2 act as a low pass filter.


Page 77

60ms


50. SIMPLIFIED MODEL CONVERTER DC-DC BOOST (FLYBACK)

•

VDC (DC voltage source=10Vdc)

•

R (Resistance, R1=0.5, R2=10)

•

C (Capacitor, C1=500uF)

•

BAT68/SIE (Diode)

•

VSTIM (Pulse)

•

Sbreak (Bias Value Power 92.54uW)


Page 78

‘Power Electronics Simulation using PSPICE’ by Suman Debnath 20

10

0

-10 0s I(L1)

1ms I(C2) V(C2:+)

2ms V(R1:2,L1:2)

3ms

4ms

5ms

6ms

7ms

8ms

9ms

Time

51. SIMPLIFIED MODEL CONVERTER DC-DC BOOST (FLYBACK) Capacitors and inductors components are able of storing the energy provided by external sources. When the switch is closed, energy is stored in inductor, while the diode is reverse biased and then is off, a growing current flows through inductor L1 from the source. When switch is open the current in inductor, through diode now directly biased, begins to flow through capacitor C2 with decreasing intensity to download all its energy in it. In this period, inductor suddenly reverses its polarity so that the overall voltage at ends of capacitor will be greater than Vi. FOR THIS REASON THIS TYPE OF CONVERTER IS NAMED VOLTAGE ELEVATOR. In the next cycle in which switch is closed again, inductor recharges itself and the capacitor provides energy to load: CONSIDERING CONVENTION OF THE USER AND THE GENERATOR, WITH THE MARKER SETS AS IN THE SCHEME, WE NOTE THAT WHEN INDUCTOR ABSORBS ENERGY THE CAPACITOR PROVIDES ENERGY TO LOAD, VICE VERSA WHEN L1 PROVIDES ENERGY THE CAPACITOR ABSORB IT. The FLYBACK term refers to reversing voltage in inductor.


Page 79

10ms


SIMPLIFIED MODEL OF BUCK-BOOST CONVERTER (FLYBACK)

•

VDC (DC voltage source=1Vdc)

•

R (Resistance, R1=0.5, R2=100)

•

C (Capacitor, C1=200uF)

•

BAT68/SIE (Diode)

•

VSTIM (Pulse)

•

Sbreak (Bias Value Power 92.54uW)


Page 80


1.0V

0.5V

0V 0s

0.1s V(R2:1,C1:-)

0.2s

0.3s

0.4s

0.5s

0.6s

0.7s

0.8s

0.9s

Time

SIMPLIFIED MODEL OF BUCK-BOOST CONVERTER (FLYBACK) This type of converter can operate both as a DROP DOWN converter that as a STEP UP converter respect to input voltage Vi and output voltage Vu.The relationship between these two voltages is ruled by the work cycle of switch according to the formula Vi / Vu = D / (1-D), where D is the duty cycle (D = Ton/(Ton+Toff) = Ton/T). The behaviour of the circuit will be ambivalent, boost converter (step up) when duty cycle is more than 50% and buck converter (drop down) where duty cycle is below the 50% (try change pulse width in Edit Pspice Stimulus to verify).Like boost regulator, when the switch is closed, inductor L1 accumulates energy.When switch is open this energy through the diode is transferred to the capacitor C1.


Page 81

1.0s


52. Frita’s and Gome’s Buck Converter-Soft switching


Page 82


200V

150V

100V

50V

0V 0s

10ms

20ms

30ms

40ms

50ms

60ms

70ms

80ms

90ms

100ms

V(R1:2) Time


Page 83


53. PWM Generation using IC555


Page 84



Page 85


20V

10V

0V V(CARRIER_SIGNAL)

V(MODULATING_SIGNAL)

20V

0V

SEL>> -20V 0s

2ms

4ms

6ms

8ms

10ms

12ms

14ms

16ms

V(OUTPUT) Time


Page 86

18ms


54. Generation of an AM signal Schematic for the generation of an AM signal

2.0V

1.0V

0V

-1.0V

-2.0V 0s

1ms

2ms

3ms

4ms

5ms

6ms

7ms

8ms

9ms

V(AM) Time


Page 87

10ms


0.5V

0V 0Hz

2KHz

4KHz

6KHz

8KHz

10KHz

12KHz

14KHz

16KHz

18KHz

20KHz

22KHz

24KHz

V(AM) Frequency

55.

Square wave generator using Op-Amp

Output of the square wave can be controlled by varying R2


Page 88

26KHz


0V

SEL>> -1.0V V(VIN) 2.0V

0V

-2.0V 0s

1ms

2ms

3ms

4ms

5ms

6ms

7ms

8ms

9ms

10ms

6ms

7ms

8ms

9ms

10ms

V(VOUT) Time

Fig.a at R2 = 1k 1.0V

0V

SEL>> -1.0V V(VIN) 20V

0V

-20V 0s

1ms

2ms

3ms

4ms

5ms

V(VOUT) Time

Fig.a at R2 = 10k


Page 89


56. Sine wave generator

The value of R3,R4 & C3,C4 should be same respectively 8.0V

4.0V

0V

-4.0V

-8.0V 0s

5ms

10ms

15ms

20ms

25ms

30ms

35ms

40ms

45ms

V(VOUT) Time


Page 90

50ms


57. Low power Electronics Application (VLSI) 57.1 PSPICE schematic of CMOS inverter In this experiment a CMOS inverter is designed and built using a PMOS and a NMOS. Once its operation and properties are clearly understood, a two-input NAND gate. NMOS and PMOS properties and their operating regions are also discussed to better understand the basic inverter topology. CMOS inverters (Complementary NOSFET Inverters) are some of the most widely used and adaptable MOSFET inverters used in chip design. They operate with very little power loss and at relatively high speed. The CMOS inverter has good logic buffer characteristics, in that, its noise margins in both low and high states are large. A CMOS inverter contains a PMOS and a NMOS transistor connected at the drain and gate terminals, a supply voltage VDD at the PMOS source terminal, and a ground connected at the NMOS source terminal, were VIN is connected to the gate terminals and VOUT is connected to the drain terminals.(See Figure 1.1). The CMOS does not contain any resistors, which makes it more power efficient that a regular resistor-MOSFET inverter. As the voltage at the input of the CMOS device varies between 0 and 5 volts, the state of the NMOS and PMOS varies accordingly. If we model each transistor as a simple switch activated by VIN, the inverter’s operations can be seen very easily:


Page 91


4.0V

2.0V

0V 0s V(OUT1)

0.5ms V(IN)

1.0ms

1.5ms

2.0ms

2.5ms

3.0ms

3.5ms

4.0ms

4.5ms

5.0ms

Time

DC Analysis of inverter


Page 92


8.0V

6.0V

4.0V

2.0V

0V 0V V(OUT1)

0.5V V(IN)

1.0V

1.5V

2.0V

2.5V

3.0V

3.5V

4.0V

4.5V

5.0V

5.5V

6.0V

6.5V

V_V3


Page 93

7.0V


57.2 CMOS NAND GATE The second step was the NAND gate is implemented based on the inverter terminology. The pull-up network (PUN) of CMOS inverter is a single PMOS and the pull-down network (PDN) consists of one NMOS. For a two-input NAND gate, the PUN consists of two PMOS and the PDN is composed of two NMOS. The output of NAND gate is low only when both inputs are high and is high for other input combinations. Thus, NMOS are connected in series and the PMOS are connected in parallel. The PUN pulls the output high when either of the PMOS is on and the output is pulled low only when both NMOS are on. This is consistent with the truth Table 2 where the two-input NAND gate.

Truth Table


A

B

F

0

0

1

0

1

1

1

0

1

1

1

0

Page 94


6.0V

4.0V

2.0V

0V 0s

1ms

2ms

3ms

4ms

5ms

6ms

7ms

8ms

9ms

10ms

6ms

7ms

8ms

9ms

10ms

6ms

7ms

8ms

9ms

10ms

V(IN1) Time

6.0V

4.0V

2.0V

0V 0s

1ms

2ms

3ms

4ms

5ms

V(IN2) Time 800mV

600mV

400mV

200mV

0V 0s

1ms

2ms

3ms

4ms

5ms

V(OUT) Time


Page 95


57.3 Current mirror Design and build CMOS Transistor Level Current Sources The purpose of this laboratory experiment is to understand the basic building blocks of an integrated circuit. This is done constructing a current source which is a fundamental part in many CMOS circuits. Current mirrors are common circuits in analog and mixed signal integrated circuits. Many fundamental current mirror configurations have been developed in bipolar, MOS, and CMOS. A current mirror is a circuit designed to copy a current through one active device by controlling the current in another active device of a circuit, keeping the output current constant regardless of loading. The current that is being “copied” can be a varying signal current. What an ideal current mirror can be thought of as is simply an ideal current amplifier. The current mirror is used to provide bias currents and active loads to circuits. The CMOS current source circuit capable of constantly generating a certain reference voltage irrespective of an analog supplying voltage, a substrate temperature, and a temperature variation, which includes a start unit for driving the CMOS current source circuit in accordance with a start signal; a bias current generating unit driven by the start unit for generating a bias current in accordance with an analog voltage, a substrate voltage, and a temperature variation; a current input unit for inputting a bias current; and a current compensation unit for receiving a bias current through the current input unit and for compensating the bias current in accordance with an analog voltage, a substrate voltage, and a temperature variation and for generating a reference current. The basic NMOS current mirror using M1 and M2 is seen in figure 1.


Page 96


The first step was build The Current mirrors using the PSPICE schematic as shown in Figure and that to understand the CMOS operation for will take places in the next procedure 5.0V

4.0V

3.0V

2.0V 0s V(M1:d)

1ns V(M3:d)

2ns

3ns

4ns

5ns

6ns

7ns

8ns

9ns

Time

Fig. IO-IREF for current mirror The PSPICE simulation displayed the input and output waveforms of the current mirror is shown in Figure 5 where the red waveform shows the output current; the green waveform shows the reference current through M1 Beta –multiplier reference

The second step to built two current mirrors one time with a resistance or Rref as shown in figure 3 where we can force the same current through M3 and M5:


Page 97

10ns


4.0V

2.0V

0V 0s V(M3:b)

1ms V(M2:d)

2ms

3ms

4ms

5ms

6ms

7ms

8ms

9ms

Time

Beta –multiplier reference The part two of the second step to built two current mirror using CMOS instead of Rref as shown in figure 4 where we can force the same current through M3 and M5:


Page 98

10ms


3.2V

2.8V

2.4V 0s

1ms

2ms

3ms

4ms

5ms

6ms

7ms

8ms

9ms

V(M5:s) Time

Discussion and Conclusion:

The VSG of each MOSFET are equal to one another, the output current is at the drain of the MOSFET which is not diode connected and be expressed by the expression ID=12μpCoxVSG2-VTP2W2L2 on the current mirror. It should also be noted if both transistors are matched, meaning that W1L1=W2L2, then the reference current will equal the output current, if the ratios are not the same then the current at the output could be larger or smaller then the reference current. In the case of the CMOS current mirror what is done is essentially connecting two current mirrors, an NMOS current mirror to the drains of the PMOS current mirror, by doing so it effectively are eliminates the use of resistors in the circuit. In the schematic (Figure 3) used for this experiment a Rref resistor is used to highlight the reference current, this resistor could be replaced by a diode connected transistor or a biased transistor in order to truly make a CMOS current mirror as shown in Figure 4. In this laboratory experiment we learned many things concerning CMOS current sources as opposed to a simple MOSFET current source. By building the CMOS version of a current source we can effectively create a true integrated without the use of resistors. In learning how to construct a current source we are building the foundation for future circuits by being able to apply a bias current, which is essential in so many circuits.


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57.4 Design and build CMOS Transistor Level Utility Amplifiers Introduction: Single stage amplifiers are used in virtually every op-amp design. By replacing a passive load resister with a MOSFET transistor (called an active load), therefore significant amount of chip area can be saved. An active load can also produce higher values of resistance when compared with a passive resistor, resulting in higher gains. A differential amplifier is a type of electronic amplifier that multiplies the difference between two inputs by some constant factor. Given two inputs Vin+ and Vin- a practical differential amplifier gives an output Vout. The differential amplifier is useful in situations where we want to amplify a small difference between two signal levels and ignore any ‘common’ level both inputs may share. Figure 1 is a simple example of a CMOS differential amplifier. One of them is where we have an input which has come from some distance and may have had some added interference. In this lab we built current differential amplifier. Since, a current mirror is designed to copy a current through one active device by controlling the current in another active device of a circuit, keeping the output current constant regardless of loading. The current being 'copied' can be, and sometimes is, a varying signal current. Theoretically, an ideal current mirror is simply an ideal current amplifier. The current mirror is used to provide bias currents and active loads to circuits. The use of current mirror is more useful in a CMOS design since it will make our design more space efficient, and because it naturally avoids supply and temperature dependence. However, Figure 1 show differential amplifier also the size of the M1 and M2 can be ratioed to give a gain or to scale the input currents. The input impedance of current differential amplifier is simply the small –signal resistance of a diode – connected MOSFET, or Rin = 1gm


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In this experiment we learned the basic properties of a differential amplifier, in which the circuit senses two inputs that vary by equal and opposite amounts and generate two outputs that behave in a similar fashion. It can also be taking into account that one can tap the signal from one output only, however taking the difference between both outputs delivers twice the gain, and improves CommonMode Rejection which is an essential function when the common-mode signal is a noise source or DC bias. The results of the experiment also conclude that as the voltage input increases from -1V to 1V the output 1 decreases in voltage while the 2nd output increases as does the current through the drains. In the end building the circuit we didn’t get the exact gain as we found in PSPICE. However, the result was close enough.


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57.5 Comparator A comparator circuit compares two voltage signals and determines which one is greater. The result of this comparison is indicated by the output voltage: if the op-amp's output is saturated in the positive direction, the noninverting input (+) is a greater, or more positive, voltage than the inverting input (-), all voltages measured with respect to ground. If the opamp's voltage is near the negative supply voltage (in this case, 0 volts, or ground potential), it means the inverting input (-) has a greater voltage applied to it than the noninverting input (+). In the case of TTL/CMOS logic output comparators, negative inputs are not allowed In general comparators are “fast”, their circuits are not immune to the classic speed-power tradeoff. High speed comparators use transistors with larger aspect ratios and hence also consume more power. Depending on the application, select either a comparator with high speed or one that saves power. A comparator normally changes its output state when the voltage between its inputs crosses through approximately zero volts. Small voltage fluctuations due to noise, always present on the inputs, can cause undesirable rapid changes between the two output states when the input voltage difference is near zero volts. To prevent this output oscillation, a small hysteresis of a few millivolts is integrated into many modern comparators. In place of one switching point, hysteresis introduces two: one for rising voltages, and one for falling voltages. The difference between the higher-level trip value (VTRIP+) and the lower-level trip value (VTRIP-) equals the hysteresis voltage (VHYST). If the comparator does not have internal hysteresis or if the input noise is greater than the internal hysteresis then an external hysteresis network can be built using positive feedback from the output to the non-inverting input of the comparator. The resulting Schmitt trigger circuit gives additional noise immunity and a cleaner output signal. When hysteresis is added then a comparator cannot resolve signals within the hysteresis band.


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Discussion and Conclusion:

From the two outputs we can see how the comparator works by taking two analog voltages and makes a decision whether the voltage at V+ is higher or lower than the voltage at V-. If the voltage V+ is higher than V-, the comparator will output a high voltage, otherwise a low voltage. The comparator can be built by cascading a high-gain differential amplifier with a common drain amplifier. This amplifier serves as buffer which provides the required output current and also as a converter that converts a differential output of the differential amplifier to single-ended output. With this laboratory experiment we learned how we can put together two inputs signals to create one larger and functional circuit. This experiment was also essential in teaching trouble shooting skills and techniques because we had so many challenges in getting the circuit to work properly even though everything was wired properly, sometimes it may just be the equipment that is being used and a way around that problem must be discovered.


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57.6 Design and build CMOS NOR Gate

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Friday, 06 February, 2015

Reference 1. “Circuit Design Layout and Simulation ”,R. Jacob Baker, second edition, Wiley & Sons, INC (2005) 2. http://en.wikipedia.org/wiki/logice gates 3. Kuphaldt, Tony R. All About Circuits, http://www.allaboutcircuits.com 4. http://www.freepatentsonline.com/5744999.html 5. A. B. Grebene, Bipolar and MOS Analog Integrated Circuit Design. John Wiley & Sons, Inc., 1984. 6. Wikipedia-The Free Encyclopedia, “Comparator” http://en.wikipedia.org/wiki/Comparator 7. http://dc308.4shared.com/doc/zA3bPdfY/preview.html


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Power Electronics Simulation using PSPICE

Power Electronics Simulation using PSPICE

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